High-quality aluminum nitride piezoelectric film and preparation method thereof

An aluminum nitride piezoelectric, high-quality technology, applied in chemical instruments and methods, manufacturing/assembly of piezoelectric/electrostrictive devices, nitrogen compounds, etc., can solve the problems of high sound speed and poor crystal quality, and achieve improved The effect of crystal quality, crystal quality improvement, and easy operation

Pending Publication Date: 2020-09-22
广州市艾佛光通科技有限公司
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Aluminum nitride is the most commercially successful piezoelectric material for FBAR. Due to its high sound velocity, it is applied to higher frequencies, which meets the requirements of the development of high-freque

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-quality aluminum nitride piezoelectric film and preparation method thereof
  • High-quality aluminum nitride piezoelectric film and preparation method thereof
  • High-quality aluminum nitride piezoelectric film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0030] A kind of preparation method of high-quality aluminum nitride piezoelectric film, such as figure 1 shown, including:

[0031] (1) Take a substrate 1, wash and dry it, and grow a single crystal aluminum nitride film 2 on the substrate 1 by MOCVD equipment;

[0032] (2) Using PVD equipment to perform magnetron sputtering on the monocrystalline aluminum nitride thin film 2 obtained in step (1) to generate a polycrystalline aluminum nitride thin film 3 .

[0033] The above-mentioned substrate 1 is a silicon substrate, a sapphire substrate, a silicon carbide substrate, a gallium nitride substrate, an aluminum nitride substrate, an Al x Ga 1- x One or several composite substrates in N composite substrates.

[0034] The thickness ratio of the single crystal aluminum nitride film 2 to the polycrystalline aluminum nitride film 3 is 1: (3-10), wherein the thickness of the single crystal aluminum nitride film 2 is 10-500nm, and the thickness of the polycrystalline aluminum nit...

Embodiment 1

[0039] A method for preparing a high-quality aluminum nitride piezoelectric film, comprising the following steps:

[0040] (1) Get a sapphire substrate as an epitaxial growth substrate, and grow a 100nm single crystal aluminum nitride thin film 2 on the sapphire substrate by a conventional MOCVD method in the art;

[0041] (2) Put the structure prepared in step (1) into a PVD device, and continue to grow a polycrystalline aluminum nitride film 3 of 800nm ​​on the single crystal aluminum nitride film 2 by the conventional magnetron sputtering method in this field.

[0042] The high-quality aluminum nitride piezoelectric thin film prepared by the method of this embodiment includes, from bottom to top, a sapphire substrate, a single crystal aluminum nitride thin film 2 with a thickness of 100 nm, and a polycrystalline aluminum nitride thin film 3 with a thickness of 800 nm.

Embodiment 2

[0044] A method for preparing a high-quality aluminum nitride piezoelectric film, comprising the following steps:

[0045] (1) Get a silicon plate as an epitaxial growth substrate, and grow a 200nm single crystal aluminum nitride film 2 by MOCVD on the silicon plate;

[0046] (2) Put the structure obtained in step (1) into a PVD device, and continue to grow a 1 μm polycrystalline aluminum nitride thin film 3 on the single crystal aluminum nitride thin film 2 by magnetron sputtering.

[0047] The high-quality aluminum nitride piezoelectric thin film prepared by the method of this embodiment includes, from bottom to top, a silicon plate, a single crystal aluminum nitride thin film 2 with a thickness of 200 nm, and a polycrystalline aluminum nitride thin film 3 with a thickness of 1 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a high-quality aluminum nitride piezoelectric film, and the method comprises the following steps: (1) taking a substrate, cleaning, spin-drying, and growing a single crystal aluminum nitride film on the substrate by using MOCVD equipment; (2) performing magnetron sputtering on the single crystal aluminum nitride thin film obtained in the step (1) byadopting PVD equipment to generate a polycrystalline aluminum nitride thin film. The method combines MOCVD and PVD two-step growth methods, is simple and easy to operate, significantly improves the crystal quality of the sputtered aluminum nitride film, and realizes the controllability of the thickness and stress of the grown aluminum nitride material. The invention further discloses a high-quality aluminum nitride piezoelectric film which is prepared by the method, the single crystal aluminum nitride film is arranged as a buffer layer, the crystal quality of the aluminum nitride film is high,and the overall performance of the aluminum nitride piezoelectric film is excellent. The invention further discloses an application of the aluminum nitride piezoelectric film to an FBAR filter, and the overall performance of an FBAR filter can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and electronic communication devices, in particular to a high-quality aluminum nitride piezoelectric film and a preparation method thereof. Background technique [0002] The multi-functional development of wireless communication terminals has put forward high technical requirements for radio frequency devices such as miniaturization, high frequency, high performance, low power consumption, and low cost. The traditional surface acoustic wave filter (SAW) has a large insertion loss in the high frequency band above 2.4GHz, and the dielectric filter has good performance but is too large. In recent years, with the improvement of processing technology and the rapid development of modern wireless communication technology, especially personal wireless communication technology, a new radio frequency device technology, namely film bulk acoustic resonator (FBAR) technology, has emerged. The ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L41/39H01L41/18C23C16/30C01B21/072
CPCC23C16/303C01B21/072H10N30/85H10N30/093
Inventor 李国强
Owner 广州市艾佛光通科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap