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4results about How to "Reduce deposition rate" patented technology

A rotary air preheater with multilayer annular heat pipes

The application discloses a rotary air preheater with a multilayer annular heat pipe, relates to the technical field of air preheating, and comprises an outer shell, an inner rotor, a center cylinder, a flue gas inlet, an air outlet, a flue gas outlet, an air inlet, a disturbance mechanism, a ring pipe group, a driving piece and a corrugated plate group. The center cylinder is coaxially arranged at the center position in the outer shell, the inner rotor is rotationally arranged on the outer wall of the center cylinder, the outer wall of the inner rotor is rotationally connected with the inner wall of the outer shell, the inner rotor is driven by the driving piece located at one side of the outer shell, the flue gas inlet and the air outlet are formed in the top end of the outer shell, and the flue gas outlet and the air inlet are formed in the bottom end of the outer shell. The corrugated plate group and the ring pipe group are arranged in the inner rotor, and a plurality of disturbance mechanisms are circumferentially arranged on the inner wall of the ring pipe group. The flue gas and the air are transversely washed to the annular heat pipe, the heat exchange coefficient of the flue gas and the air is strengthened, the deposition rate and deposition amount of ammonium bisulfate on the heated surface can be significantly slowed down, and the safety risk is reduced.
Owner:XI'AN PETROLEUM UNIVERSITY

A method for preparing a Ni metallization interface layer on a SnSe surface

This invention relates to a method for preparing a Ni metallized interface layer on a SnSe surface. The method utilizes an electrodeposition apparatus to prepare the Ni metallized interface layer on the surface of a SnSe single crystal. The process involves pretreating the single-crystal SnSe sample; injecting an electroplating solution into an electrolytic cell and heating it to a preset temperature; clamping the pretreated SnSe single crystal onto the cathode of the electrolytic cell; clamping a Ni wire electrode onto the anode of the electrolytic cell; and performing low-speed DC deposition to deposit a dense, tightly bonded initial Ni layer on the pretreated SnSe single crystal; then disconnecting the electrical connection of the constant current source; and finally performing high-speed pulse deposition to deposit a sufficiently thick Ni metallized layer on the initial Ni layer at a high rate. By combining DC and pulse deposition methods, the method balances the requirements for deposition rate and metallized interface layer quality, resulting in a metallized interface layer with good mechanical stability and adhesion.
Owner:CHINA INSTITUTE OF ATOMIC ENERGY

Growth inhibitor for film formation, film formation method using the same, and semiconductor substrate manufactured thereby

ActiveCN115768921Blower growth rateImprove thickness uniformityBrominePhysical chemistry
The present application relates to a growth inhibitor for film formation, a film formation method using the same, and a semiconductor substrate manufactured thereby. Specifically, it relates to a growth inhibitor for film formation which is a compound represented by Chemical Formula 1, a film formation method using the same, and a semiconductor substrate manufactured thereby, [Chemical Formula 1] AnB m X o Y i Z j wherein A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is one or more selected from fluorine, chlorine, bromine, and iodine; Y and Z are each independently one or more selected from oxygen, nitrogen, sulfur, and fluorine, and are different from each other; n is an integer of 1 to 15; o is an integer of 1 or more; m is 0 to 2n+1; i and j are each an integer of 0 to 3. The present application can suppress side reactions, reduce film growth rate, and remove process by-products in the film, thereby greatly improving step coverage and thickness uniformity of the film even when forming a film on a substrate having a complex structure.
Owner:SOULBRAIN CO LTD

Supercritical carbon dioxide heat exchange system and waste heat recovery method

The application provides a supercritical carbon dioxide heat exchange system and a waste heat recovery method, and belongs to the technical field of energy and thermal equipment. The system adopts a differential flow channel design combining a large-pitch channel on the flue gas side and a micro-channel on the carbon dioxide side, and integrates an online pulse soot blowing device taking preheated compressed air as a medium. Meanwhile, the heat exchange core adopts a nickel-based alloy material with smooth surface treatment to inhibit ash adhesion. The heat exchanger can be integrated in a supercritical CO2 Brayton cycle power generation system, soot blowing is triggered by intelligently monitoring pressure drop or temperature difference, and soot blowing is realized without stopping. The application fundamentally solves the problems of blockage and ash deposition of high-efficiency heat exchangers under the working condition of ash-containing flue gas, ensures that the waste heat recovery system can operate long-term, stably and efficiently, and significantly improves the energy utilization efficiency and system economy.
Owner:UNIV OF SHANGHAI FOR SCI & TECH