21results about How to "Reduce deposition rate" patented technology

The invention discloses composite powder with a core-shell structure and a preparation method of the composite powder. The preparation method comprises the steps of pretreatment, titanium dioxide coating treatment, plating solution treatment and silver coating treatment. The titanium dioxide coating treatment comprises the following steps: after ultrasonically stirring butyl titanate and absolute ethyl alcohol, adding dilute acid to prepare a reaction solution; nickel powder is added into the reaction liquid for a constant-temperature reaction, and titanium dioxide coated nickel powder is obtained after the reaction; the plating solution treatment comprises the steps that titanium dioxide coated nickel powder, a solvent and a dispersing agent are subjected to ultrasonic stirring and then subjected to constant-temperature stirring, a reducing agent and a sodium hydroxide solution are added, and a dispersed solution is obtained after reaction; the silver coating treatment comprises the following steps: ultrasonically stirring and dispersing silver nitrate and deionized water, and then adding a complexing agent for complexing reaction; and pouring into the dispersion solution under a stirring state, and reacting to obtain the composite powder. According to the method, the stability of the nickel powder and the compactness of the coating layer in the preparation process of the composite powder can be effectively improved, and then the conductivity of the composite powder can be improved.

The invention provides a preparation method of an antireflection film of a semiconductor laser, and belongs to the technical field of semiconductor lasers. The problem that a film layer falls off in an existing anti-reflection film preparation process is solved. Comprising the following steps: pretreatment cleaning before bar coating: vacuumizing a chamber of reaction magnetic control equipment to a vacuum degree of 10 <-6 > Torr grade, turning on a heating lamp to heat the chamber to a set temperature, starting an ion source, introducing a proper amount of plasma gas into the ion source, introducing a proper amount of plasma gas into the chamber to enable the vacuum degree of the chamber to reach a 10 <-3 > Torr grade, and then cleaning; in the process steps of plating the silicon nitride thin film and the aluminum oxide thin film, a chamber is kept at a certain temperature, and then the vacuum degree of the chamber is reduced during film plating; and the performance of the laser is stably improved while the production yield of the semiconductor laser is improved.

The invention discloses a biaxially stretched polypropylene film for capacitors and a preparation method thereof, comprising the following steps: step 1, uniformly mixing nanoporous silica and cycloolefin copolymer, extruding them twice through a double-screw extruder, melting them at high temperature, hot pressing them on a flat vulcanizer, and then granulating them to obtain a mixed cycloolefin copolymer; step 2, blending the mixed cycloolefin copolymer and polypropylene through a torque rheometer, casting them through a casting machine, and biaxially stretching them to obtain a polypropylene film; the biaxially stretched polypropylene film for capacitors prepared by the invention is prepared by mixing the cycloolefin copolymer and the polypropylene, and the heat resistance of the polypropylene film is improved; the high temperature resistance and mechanical properties of the polypropylene film are further improved by uniformly mixing the nanoporous silica in the cycloolefin copolymer; the nanoporous silica is uniformly dispersed in the polypropylene through the cycloolefin copolymer, and the prepared polypropylene film has excellent heat resistance and high mechanical strength.

The application discloses a rotary air preheater with a multilayer annular heat pipe, relates to the technical field of air preheating, and comprises an outer shell, an inner rotor, a center cylinder, a flue gas inlet, an air outlet, a flue gas outlet, an air inlet, a disturbance mechanism, a ring pipe group, a driving piece and a corrugated plate group. The center cylinder is coaxially arranged at the center position in the outer shell, the inner rotor is rotationally arranged on the outer wall of the center cylinder, the outer wall of the inner rotor is rotationally connected with the inner wall of the outer shell, the inner rotor is driven by the driving piece located at one side of the outer shell, the flue gas inlet and the air outlet are formed in the top end of the outer shell, and the flue gas outlet and the air inlet are formed in the bottom end of the outer shell. The corrugated plate group and the ring pipe group are arranged in the inner rotor, and a plurality of disturbance mechanisms are circumferentially arranged on the inner wall of the ring pipe group. The flue gas and the air are transversely washed to the annular heat pipe, the heat exchange coefficient of the flue gas and the air is strengthened, the deposition rate and deposition amount of ammonium bisulfate on the heated surface can be significantly slowed down, and the safety risk is reduced.

The invention provides a sand accumulation prevention preliming barrel which comprises a barrel body, an upper stirring device and a lower stirring device, the upper stirring device and the lower stirring device are arranged in the barrel body and used for mixing mother liquor and lime milk, the upper stirring device comprises a transmission shaft extending into the barrel body and a plurality of upper stirring impellers detachably connected with the transmission shaft, and the lower stirring device is arranged at the bottom of the barrel body. The lower stirring device comprises a lower stirring impeller rotationally connected to the bottom wall of the barrel body, the rotating direction of the lower stirring impeller enables the medium to be turned over upwards, and the barrel body is provided with a mother liquor inlet allowing mother liquor to enter, a lime milk inlet allowing lime milk to enter and a sand liquor outlet for outputting mixed liquor formed after the mother liquor and the lime milk are mixed. According to the sand accumulation prevention preliming barrel, through mutual cooperation of the upper stirring device and the lower stirring device, the stirring effect is improved, and meanwhile the accumulation speed of sand grains at the bottom of the barrel is reduced.

The utility model discloses a modularized anti-blocking shell-and-tube heat exchanger. The modularized anti-blocking shell-and-tube heat exchanger comprises a heat exchange module, a water chamber, a supporting structure and a connection unit. The heat exchange module comprises a shell, a shell pass inlet, a shell pass outlet, a heat exchange tube, a tube plate and a shell pass baffle plate; the water chamber comprises a connection water chamber, a water inlet and outlet chamber, a tube pass inlet, a tube pass outlet, a first drain outlet, a first middle partition plate and a third drain outlet. The supporting structure comprises a base; the communication unit comprises a shell pass connecting pipe, a tube pass connecting pipe, a middle partition plate II and a sewage draining exit; the heat exchange tube is shorter, and the influence of a fluid boundary layer in the tube is weakened; the modular structural design is adopted, so that the maintenance, replacement and scale removal processes are more convenient; and the combination number and the connection mode of the heat exchange modules can be flexibly and optimally designed according to the actual heat use requirement of a user, and the user experience is better.

This utility model discloses an anti-clogging device for methanol-to-olefins (MTO) systems, relating to the field of water washing anti-clogging devices. It includes a water washing tower, a water washing pump, and a C5 refueling assembly. The C5 refueling assembly comprises, in sequence, a C5 self-separation unit pipeline, a fuel oil / C5 flow meter, a fuel oil tank inlet pipeline regulating valve, a C5 inlet pipeline, a fuel oil pump, a fuel oil pump outlet pressure control valve, and a C5 to water washing pump inlet pipeline, thus forming a continuous refueling path. This utility model, by setting up the C5 refueling assembly and injecting C5, a byproduct of the C5 self-separation unit, utilizes the principle of "like dissolves like" to alter the surface tension of the medium, forming an oil-water two-phase flow that reduces the deposition rate of solid particles. The C5 thus dissolves and removes scale buildup in the system. By utilizing the chemical dissolving effect of C5, the clogging problem in the water washing system of a MTO unit is effectively prevented.

The utility model discloses a MBR membrane assembly of uniform aeration, including membrane frame, membrane silk unit and water collecting pipe, and membrane silk unit is installed on membrane frame, and is linked with water collecting pipe, still include aeration assembly and flow guide component, and aeration assembly is located membrane silk unit below, and aeration assembly includes annular aeration main pipe and several even distribution's aeration branch pipe, and aeration branch pipe is perpendicular to the width direction of membrane silk unit, and two rows of aeration holes are opened along the axis symmetry on aeration branch pipe, flow guide component includes two side baffles, and side baffle is located membrane silk unit outside and leans to outside. The utility model discloses adopt annular aeration main pipe and several even distribution's aeration branch pipe, let bubble can be more evenly distributed in each area of membrane silk unit, make the sludge on the surface of membrane silk can be timely and effectively washed away, prolongs the service life of membrane silk.

This invention relates to a method for preparing a Ni metallized interface layer on a SnSe surface. The method utilizes an electrodeposition apparatus to prepare the Ni metallized interface layer on the surface of a SnSe single crystal. The process involves pretreating the single-crystal SnSe sample; injecting an electroplating solution into an electrolytic cell and heating it to a preset temperature; clamping the pretreated SnSe single crystal onto the cathode of the electrolytic cell; clamping a Ni wire electrode onto the anode of the electrolytic cell; and performing low-speed DC deposition to deposit a dense, tightly bonded initial Ni layer on the pretreated SnSe single crystal; then disconnecting the electrical connection of the constant current source; and finally performing high-speed pulse deposition to deposit a sufficiently thick Ni metallized layer on the initial Ni layer at a high rate. By combining DC and pulse deposition methods, the method balances the requirements for deposition rate and metallized interface layer quality, resulting in a metallized interface layer with good mechanical stability and adhesion.

The invention provides a preparation method of a silicon nitride waveguide, and relates to the technical field of semiconductors. The preparation method comprises the following steps: depositing a silicon oxide layer on the surface of a substrate; depositing a monocrystalline silicon layer with a preset thickness on the surface of the silicon oxide layer, wherein the preset thickness is any value in the range; photoresist coating, developing treatment and etching treatment are sequentially carried out on the monocrystalline silicon layer, so that the monocrystalline silicon layer with a preset horizontal distance is reserved on the surface of the silicon oxide layer from the edge to the center, and the preset horizontal distance is any one value ranging from 4 micrometers to 6 micrometers; and depositing a silicon nitride layer on the surfaces of the monocrystalline silicon layer and the silicon oxide layer, and sequentially carrying out developing treatment and etching treatment to prepare the silicon nitride waveguide. The stress matching degree between the silicon nitride layer and the silicon oxide layer in the silicon nitride waveguide is improved, the risk of stripping of the silicon nitride layer is reduced, and the product yield is improved.

The application discloses a slow-flowing river ecological restoration method, and relates to the technical field of river restoration.The method comprises the following steps: 1) preparing an ecological restoration carrier; 2) determining the ecological suitability of river bottom sludge; 3) dividing the river into different regions; and 4) restoring the ecology of the river.The present application divides the slow-flowing river with mild pollution into different regions according to the survival rates of aquatic plants, and uses different ecological management schemes accordingly.The survival rate of the seedlings of submerged plants in the slow-flowing river section after management is significantly improved, and about 60% of the riverbed is covered by the submerged plants.

The invention provides a method for depositing a thin film on a curved wafer, the wafer has a first surface, the first surface has a plurality of deep trench isolation structures, the curvature of the wafer is greater than a set curvature threshold, and the method comprises the following steps: transferring the wafer into a heating chamber for preheating; transferring the wafer into a deposition chamber, and adjusting process parameters to reduce the deposition rate; and process gas is input into the deposition chamber, based on the adjusted process parameters, a first thin film layer with the preset thickness is deposited and formed on the first surface through a plasma enhanced chemical vapor deposition process, and the deposition rate of the first thin film layer ranges from 1A / S to 40 A / S. The invention further provides equipment for depositing the thin film on the bent wafer. According to the method, the uniformity of the thin film deposited on the bent wafer can be greatly improved, and the thin film meeting the process requirement can be obtained on the surface of the bent wafer under the condition that various characteristics of the front-layer thin film are not changed.

This invention relates to the field of scale inhibitor production technology, specifically to a reverse osmosis membrane scale inhibitor for high-iron and high-alumina wastewater treatment and its preparation method; it is used to solve the problems of poor scale inhibition performance and fouling deposition on the surface of reverse osmosis membranes by existing scale inhibitors; firstly, aminobutyric acid dihydroxyoxime acid and aminophenyl vinyl-8-hydroxyquinoline are synthesized, and the imine diacetic acid group of the chelating resin is reacted with the amino groups in aminobutyric acid dihydroxyoxime acid and aminophenyl vinyl-8-hydroxyquinoline respectively to obtain a double-modified chelating resin of isohydroxyoxime acid group and 8-hydroxyquinoline group. The isohydroxyoxime acid group forms a stable chelate with iron ions and aluminum ions through a hexadecimal octahedral complex structure, and the 8-hydroxyquinoline group forms a five-membered ring chelate with the nitrogen atom of the quinoline ring through the hydroxyl oxygen, which has the ability to chelate aluminum ions and iron ions, inhibiting the formation of fouling and organic deposits on the membrane surface and keeping the membrane surface clean.

The present application relates to a growth inhibitor for film formation, a film formation method using the same, and a semiconductor substrate manufactured thereby. Specifically, it relates to a growth inhibitor for film formation which is a compound represented by Chemical Formula 1, a film formation method using the same, and a semiconductor substrate manufactured thereby, [Chemical Formula 1] AnB m X o Y i Z j wherein A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is one or more selected from fluorine, chlorine, bromine, and iodine; Y and Z are each independently one or more selected from oxygen, nitrogen, sulfur, and fluorine, and are different from each other; n is an integer of 1 to 15; o is an integer of 1 or more; m is 0 to 2n+1; i and j are each an integer of 0 to 3. The present application can suppress side reactions, reduce film growth rate, and remove process by-products in the film, thereby greatly improving step coverage and thickness uniformity of the film even when forming a film on a substrate having a complex structure.

The application provides a supercritical carbon dioxide heat exchange system and a waste heat recovery method, and belongs to the technical field of energy and thermal equipment. The system adopts a differential flow channel design combining a large-pitch channel on the flue gas side and a micro-channel on the carbon dioxide side, and integrates an online pulse soot blowing device taking preheated compressed air as a medium. Meanwhile, the heat exchange core adopts a nickel-based alloy material with smooth surface treatment to inhibit ash adhesion. The heat exchanger can be integrated in a supercritical CO2 Brayton cycle power generation system, soot blowing is triggered by intelligently monitoring pressure drop or temperature difference, and soot blowing is realized without stopping. The application fundamentally solves the problems of blockage and ash deposition of high-efficiency heat exchangers under the working condition of ash-containing flue gas, ensures that the waste heat recovery system can operate long-term, stably and efficiently, and significantly improves the energy utilization efficiency and system economy.

The invention relates to the field of three-dimensional packaging, and discloses a rapid low-cost manufacturing method of a glass adapter plate for chip 3D packaging. A single-plate electrode electric field is adopted to drive a multi-nozzle spray deposition micro-nano 3D printing technology, and according to optimized printing process parameters and a set printing path, efficient defect-free metallization of a high-aspect-ratio glass through hole and rapid printing of a conductive pattern on the surface of a glass adapter plate are carried out. According to the rapid and low-cost manufacturing method of the glass adapter plate for chip 3D packaging provided by the invention, integrated manufacturing of the double-sided conductive pattern and the metalized TGV of the glass adapter plate can be realized by using single electric field driven jet micro-nano 3D printing equipment.

The invention discloses a process method and process equipment for thin film deposition. The process method comprises the following steps: introducing a precursor into a substrate, wherein the surface of the substrate comprises a plurality of gaps; and sputtering gas is introduced, and first radio frequency energy is provided, so that the sputtering gas is dissociated into plasma to bombard the upper surface of the gap, the precursor on the upper surface of the gap is removed, and the amount of the precursor on the upper surface of the gap is smaller than the amount of the precursor in the gap. By executing the steps, the deposition rate of the upper surface of the gap can be reduced, but the deposition rate in the gap is not influenced, so that the step coverage rate in the gap can be enhanced and the gap filling capability in the deposition process can be improved under the condition of not increasing the reaction source consumption, the time length and the process complexity.

The invention discloses an ecological restoration method for a slow-flow river channel, and relates to the technical field of river restoration. Comprising the following steps: 1) preparing an ecological restoration carrier; 2) measuring the ecological suitability degree of the river bottom sludge; (3) riverway zoning; and 4) ecological restoration of the river channel. According to different survival rates of aquatic plants in a slow-flow river channel with moderate and light pollution, the aquatic plants are divided into different areas, and different ecological management schemes are used in a targeted manner. The survival rate of submerged plant seedlings in the controlled slow-flow river reach is remarkably increased, and about 60% of the riverbed area is covered by submerged plants.

The invention relates to the technical field of water pumping of prefabricated pumps, in particular to an integrated automatic cleaning and flushing device for a prefabricated pump station, a valve pipeline is provided with an input pipeline externally connected with a water tank, the input pipeline is connected with a first cleaning pipeline and a second cleaning pipeline, the second cleaning pipeline is communicated with an inner flow channel, and the first cleaning pipeline is communicated with a cleaning grid machine; the submersible pump has the beneficial effects that fan blades and a cleaning grid machine are additionally arranged in an existing submersible pump, so that water flow at the bottom of the water inlet inner cavity is fully mixed and scattered, impurities in the entering water flow are fully crushed, the deposition speed of sludge and the impurities is reduced, the submersible pump is suspended through the bottom cross beam, water inlet blockage is avoided, and the service life of the submersible pump is prolonged. And in the water inlet process, the fan blades rotate, transversely stretch and retract to drive and spray water, so that the inner wall of the water inlet inner cavity is fully cleaned, and sludge deposited at the bottom is fully scattered and mixed with water flow to be discharged.

The utility model relates to the technical field of sewage treatment systems, solves the problem that sludge accumulated in a plate heat exchanger is inconvenient to treat in the prior art, and discloses a nitrification and denitrification system which comprises a nitrification tank, a denitrification tank, a plate heat exchanger and a cooling tower, the nitrification tank is provided with a liquid inlet pipe, and the liquid inlet pipe is provided with a first valve body; the denitrification tank is provided with a liquid discharge pipe; the cooling tower is provided with a cold water pipe and a return pipe; wherein the cold water pipe is communicated with a branch pipe, the branch pipe is communicated with the liquid inlet pipe, a second valve body is arranged at the joint of the cold water pipe and the branch pipe, and a third valve body is arranged at the joint of the branch pipe and the liquid inlet pipe. According to the application, the cooling liquid can enter the plate heat exchanger to wash sludge deposited in the plate heat exchanger. Therefore, the tedious process of disassembling and cleaning the plate sheets of the plate heat exchanger is avoided, the labor cost is reduced, the maintenance cost is reduced, and the maintenance efficiency of the plate heat exchanger is improved.

The invention discloses atomic layer deposition equipment and a precursor source device thereof. The precursor source device comprises a bottle main body, a source outlet pipeline, a carrier gas inlet pipe, a precursor temperature detection assembly, a precursor liquid level detection assembly, a vacuum gauge and a hot bath mechanism. During application, the temperature of the precursor is kept within a reasonable range, and the precursor discharged from the source outlet pipeline of the precursor source device enters the atomic layer deposition chamber to directly react, so that more time is saved, and the deposition speed is increased. Moreover, the discharge speed of the precursor and the carrier gas is controlled according to the data of the mass flow meter on the source outlet pipeline, and the gas inlet speed of the carrier gas is controlled according to the data of the mass flow meter on the carrier gas inlet pipe, so that the gas inlet amount of the precursor is more stable, the deposition quality is better, and the reduction of the atomic layer deposition speed caused by insufficient gas inlet amount is avoided. And the bottom wall of the bottle main body is the inverted conical wall, so that the precursor residue in the bottle main body is less, the waste of precursor raw materials is reduced, and the cost is reduced.