8results about How to "Reduce deposition rate" patented technology

The application discloses a rotary air preheater with a multilayer annular heat pipe, relates to the technical field of air preheating, and comprises an outer shell, an inner rotor, a center cylinder, a flue gas inlet, an air outlet, a flue gas outlet, an air inlet, a disturbance mechanism, a ring pipe group, a driving piece and a corrugated plate group. The center cylinder is coaxially arranged at the center position in the outer shell, the inner rotor is rotationally arranged on the outer wall of the center cylinder, the outer wall of the inner rotor is rotationally connected with the inner wall of the outer shell, the inner rotor is driven by the driving piece located at one side of the outer shell, the flue gas inlet and the air outlet are formed in the top end of the outer shell, and the flue gas outlet and the air inlet are formed in the bottom end of the outer shell. The corrugated plate group and the ring pipe group are arranged in the inner rotor, and a plurality of disturbance mechanisms are circumferentially arranged on the inner wall of the ring pipe group. The flue gas and the air are transversely washed to the annular heat pipe, the heat exchange coefficient of the flue gas and the air is strengthened, the deposition rate and deposition amount of ammonium bisulfate on the heated surface can be significantly slowed down, and the safety risk is reduced.

The utility model discloses a modularized anti-blocking shell-and-tube heat exchanger. The modularized anti-blocking shell-and-tube heat exchanger comprises a heat exchange module, a water chamber, a supporting structure and a connection unit. The heat exchange module comprises a shell, a shell pass inlet, a shell pass outlet, a heat exchange tube, a tube plate and a shell pass baffle plate; the water chamber comprises a connection water chamber, a water inlet and outlet chamber, a tube pass inlet, a tube pass outlet, a first drain outlet, a first middle partition plate and a third drain outlet. The supporting structure comprises a base; the communication unit comprises a shell pass connecting pipe, a tube pass connecting pipe, a middle partition plate II and a sewage draining exit; the heat exchange tube is shorter, and the influence of a fluid boundary layer in the tube is weakened; the modular structural design is adopted, so that the maintenance, replacement and scale removal processes are more convenient; and the combination number and the connection mode of the heat exchange modules can be flexibly and optimally designed according to the actual heat use requirement of a user, and the user experience is better.

This invention relates to a method for preparing a Ni metallized interface layer on a SnSe surface. The method utilizes an electrodeposition apparatus to prepare the Ni metallized interface layer on the surface of a SnSe single crystal. The process involves pretreating the single-crystal SnSe sample; injecting an electroplating solution into an electrolytic cell and heating it to a preset temperature; clamping the pretreated SnSe single crystal onto the cathode of the electrolytic cell; clamping a Ni wire electrode onto the anode of the electrolytic cell; and performing low-speed DC deposition to deposit a dense, tightly bonded initial Ni layer on the pretreated SnSe single crystal; then disconnecting the electrical connection of the constant current source; and finally performing high-speed pulse deposition to deposit a sufficiently thick Ni metallized layer on the initial Ni layer at a high rate. By combining DC and pulse deposition methods, the method balances the requirements for deposition rate and metallized interface layer quality, resulting in a metallized interface layer with good mechanical stability and adhesion.

The invention provides a preparation method of a silicon nitride waveguide, and relates to the technical field of semiconductors. The preparation method comprises the following steps: depositing a silicon oxide layer on the surface of a substrate; depositing a monocrystalline silicon layer with a preset thickness on the surface of the silicon oxide layer, wherein the preset thickness is any value in the range; photoresist coating, developing treatment and etching treatment are sequentially carried out on the monocrystalline silicon layer, so that the monocrystalline silicon layer with a preset horizontal distance is reserved on the surface of the silicon oxide layer from the edge to the center, and the preset horizontal distance is any one value ranging from 4 micrometers to 6 micrometers; and depositing a silicon nitride layer on the surfaces of the monocrystalline silicon layer and the silicon oxide layer, and sequentially carrying out developing treatment and etching treatment to prepare the silicon nitride waveguide. The stress matching degree between the silicon nitride layer and the silicon oxide layer in the silicon nitride waveguide is improved, the risk of stripping of the silicon nitride layer is reduced, and the product yield is improved.

The application discloses a slow-flowing river ecological restoration method, and relates to the technical field of river restoration.The method comprises the following steps: 1) preparing an ecological restoration carrier; 2) determining the ecological suitability of river bottom sludge; 3) dividing the river into different regions; and 4) restoring the ecology of the river.The present application divides the slow-flowing river with mild pollution into different regions according to the survival rates of aquatic plants, and uses different ecological management schemes accordingly.The survival rate of the seedlings of submerged plants in the slow-flowing river section after management is significantly improved, and about 60% of the riverbed is covered by the submerged plants.

This invention relates to the field of scale inhibitor production technology, specifically to a reverse osmosis membrane scale inhibitor for high-iron and high-alumina wastewater treatment and its preparation method; it is used to solve the problems of poor scale inhibition performance and fouling deposition on the surface of reverse osmosis membranes by existing scale inhibitors; firstly, aminobutyric acid dihydroxyoxime acid and aminophenyl vinyl-8-hydroxyquinoline are synthesized, and the imine diacetic acid group of the chelating resin is reacted with the amino groups in aminobutyric acid dihydroxyoxime acid and aminophenyl vinyl-8-hydroxyquinoline respectively to obtain a double-modified chelating resin of isohydroxyoxime acid group and 8-hydroxyquinoline group. The isohydroxyoxime acid group forms a stable chelate with iron ions and aluminum ions through a hexadecimal octahedral complex structure, and the 8-hydroxyquinoline group forms a five-membered ring chelate with the nitrogen atom of the quinoline ring through the hydroxyl oxygen, which has the ability to chelate aluminum ions and iron ions, inhibiting the formation of fouling and organic deposits on the membrane surface and keeping the membrane surface clean.

The present application relates to a growth inhibitor for film formation, a film formation method using the same, and a semiconductor substrate manufactured thereby. Specifically, it relates to a growth inhibitor for film formation which is a compound represented by Chemical Formula 1, a film formation method using the same, and a semiconductor substrate manufactured thereby, [Chemical Formula 1] AnB m X o Y i Z j wherein A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is one or more selected from fluorine, chlorine, bromine, and iodine; Y and Z are each independently one or more selected from oxygen, nitrogen, sulfur, and fluorine, and are different from each other; n is an integer of 1 to 15; o is an integer of 1 or more; m is 0 to 2n+1; i and j are each an integer of 0 to 3. The present application can suppress side reactions, reduce film growth rate, and remove process by-products in the film, thereby greatly improving step coverage and thickness uniformity of the film even when forming a film on a substrate having a complex structure.

The application provides a supercritical carbon dioxide heat exchange system and a waste heat recovery method, and belongs to the technical field of energy and thermal equipment. The system adopts a differential flow channel design combining a large-pitch channel on the flue gas side and a micro-channel on the carbon dioxide side, and integrates an online pulse soot blowing device taking preheated compressed air as a medium. Meanwhile, the heat exchange core adopts a nickel-based alloy material with smooth surface treatment to inhibit ash adhesion. The heat exchanger can be integrated in a supercritical CO2 Brayton cycle power generation system, soot blowing is triggered by intelligently monitoring pressure drop or temperature difference, and soot blowing is realized without stopping. The application fundamentally solves the problems of blockage and ash deposition of high-efficiency heat exchangers under the working condition of ash-containing flue gas, ensures that the waste heat recovery system can operate long-term, stably and efficiently, and significantly improves the energy utilization efficiency and system economy.