147results about How to "Reduce deposition rate" patented technology

The invention relates to a phosphorus-free corrosion-inhibition antiscalant used for industrial circulation cooling water treatment, which is characterized by comprising the following medicament components by weight: 10-40% of N-alkyl group-N-fat acyl amino fatty acid salt, 5-25% of hydroxy carboxylate, 5-20% of carboxylic acid copolymer, 1-4% of metal salt and the balance water.

The invention discloses a preparation method of a nano complex diamond-like coating layer. The method utilizes the cathode arc discharge controlled by a magnetic field, and excessive ethyne gas is introduced to the front of a metal target, and a metal carbide layer is formed on the target surface, metal carbide can be steamed from the target surface while the arc moves; furthermore, under the function of an auxiliary magnetic field, the front of the arc target utilizes the arc discharge to generate strong plasma ionized ethyne gas, and generate high ionized carbon ions; under the function of bias, the metal carbide steamed from the target surface and carbon ions generated by ethyne form a carbide doped nano complex diamond-like coating layer. The diamond-like coating layer prepared by the invention has the advantages of high coating hardness, strong adhesive force, high coating growing speed and production efficiency, low production cost and simple equipment structure, etc.; the invention can be applied to preparing the diamond-like coating layer of different thickness on all kinds of workpieces such as hard alloy, high speed steel, stainless steel, carbon steel, die steel, etc. according to different using requirements.

The invention provides a graphene preparation method, which combines a cathode vacuum electric arc deposition technology, an electron beam evaporation plating technology and a vacuum annealing process. According to the method, by optimizing process parameters, an amorphous carbon film with high sp3 content is deposited on the surface of a matrix, a catalyst film is subjected to evaporation platingat the surface through an electron beam, and finally annealing is performed at a temperature of 450-500 DEG C to diffuse and precipitate carbon onto the surface of the catalyst film so as to convertthe structure into the graphene structure to form the few-layer or multi-layer graphene. Compared to the existing graphene preparation process, the graphene preparation process of the invention has advantages of simpleness, easy performing, low annealing temperature and reduced cost; and the used carbon source is not the gas but the solid, and the number of the layers of graphene can be controlledby controlling the thickness of the carbon source so as to achieve the controlled preparation of graphene.

The invention relates to a film coating system and a film thickness monitoring device thereof, and a film coating method and a film thickness monitoring method thereof. The film thickness monitoring device comprises a shielding plate and a quartz crystal wafer, wherein the shielding plate and the quartz crystal wafer can rotate relative to each other, and the shielding plate is provided with an opening; and in the relative rotating process, the opening allows airflow of a film coating material to pass through to enable the airflow to reach the quartz crystal wafer, and other parts, except the opening, of the shielding plate block the airflow from reaching the quartz crystal wafer. The shielding plate is adopted for blocking the airflow, the deposition velocity of film on the quartz crystal wafer is slowed down, the service time of the quartz crystal wafer is prolonged, and therefore the continuous running time of the equipment is prolonged, and the cost is correspondingly reduced. In addition, the shielding plate and the quartz crystal wafer can rotate relative to each other, so that the airflow of the film coating material can pass through the opening in the rotating process and then is uniformly deposited on the quartz crystal wafer, the situation that the thickness of the film coating materials deposited on the quartz crystal wafer is not uniform due to the fact that the opening is arranged is avoided, and the monitoring accuracy is guaranteed and improved.

The invention discloses a frostless refrigerator capable of defrosting through coupling of ultrasonic waves and super-hydrophobic materials, and a control method of the frostless refrigerator. The frostless refrigerator comprises a master controller, an evaporation chamber, a refrigerating chamber, a cold storage chamber, a compressor, a drainage device, an environmental temperature sensor and a magnetic sensitive control air valve, wherein the master controller is separately connected with a ultrasonic wave oscillation system, the compressor, an electric heater, the magnetic sensitive control air valve, a fan, the environmental temperature sensor, a refrigerating chamber temperature sensor, an evaporator temperature sensor and a cold storage chamber temperature sensor, and the ultrasonic wave oscillation system and the electric heater are defrosting devices; the surface of an evaporator, the surface of a refrigerating chamber air channel, the surface of a refrigerating chamber air-return vent, the surface of a cold storage chamber air channel, and the surface of a cold storage chamber air-return channel are made from super-hydrophobic materials. According to the frostless refrigerator and the control method thereof disclosed by the invention, frosting surfaces are treated by using the super-hydrophobic materials, ultrasonic waves and electric heating are coupled, on-line defrosting is performed in a manner that the frostless refrigerator does not stop, the stable running environment of the refrigerator is guaranteed, and the service life of the refrigerator is prolonged.

A vacuum coating machine baffle with adjustable deposition rate comprises a high-temperature resistant circular plate, a rotating shaft which is vertically connected at the center of the circular plate and a driving device connected at the lower end of the rotating shaft. The baffle is characterized in that the circular plate is divided into a plurality of sectors from the center of the circular plate in a radiant way, and the sectors are sequentially a full blocking area, a non-blocking area and more than one blocking areas which has the blocking degree changing from small to large and covers until the full blocking area; the non-blocking area is formed by excavating panels of the sectors, the full blocking area is formed by completely maintaining the panels of the sectors, and the sectors of the blocking area are respectively provided with a plurality of through holes that have the apertures from large to small and the densities from dense to loose, while the apertures of the through holes in the same sector are the same as each other and have even density; the sectors completely cover a coating material evaporation source. The vacuum coating machine baffle can effectively regulate the deposition rate of the film in a multistep way under the condition of not changing the evaporation method and the evaporation rate of the coating materials, thus achieving the aim of improving the performance of film deposition.

The invention discloses a tubular type silicon nitride PECVD technology. Film plating is carried out twice, the temperature used for plating a first film is lower than the temperature used for plating a second film. The deposition technology provided by the invention improves the passivation anti-reflection effect of a tubular type PECVD silicon nitride film for a crystal silicon solar battery and reduces technology time.

The invention relates to a method for preparing monodisperse size-controllable nanosilver particles by using a radio frequency magnetron sputtering method. The monodisperse size-controllable nanosilver particles are prepared by using the radio frequency magnetron sputtering method under the condition that the basal spur of an equipment target is fixed by means of adjusting the process parameters such as vacuum degree, working air pressure, radio-frequency power, substrate temperature, deposition time and the like by selecting 99.999% superfine silver as a magnetron sputtering target, glass or silicon as a substrate and high purity argon (Ar) as working gas. The method which is a pure physical method has the advantages of being zero in pollution, low in cost, repeatable in operation, small in deposition rate, easily precise in control in the growth process and the like, and the prepared nanosilver particles are uniform and neat and particle size-controllable.

The invention relates to a preparation method for a gold plating on the surface of a silicon carbide particle reinforced aluminum-based composite material, and belongs to the technical field of surface engineering. The preparation method comprises the following steps that pretreatment is performed on the silicon carbide particle reinforced aluminum-based composite material; micro-arc oxidation isperformed on the pretreated silicon carbide particle reinforced aluminum-based composite material; surface sensitization, activation and reduction treatment is performed on the material subjected to the micro-arc oxidation; chemical nickel plating is performed on the surface of the material to obtain the material with a nickel layer; and gold plating is performed on the surface of the nickel layerto obtain the gold plating located on the surface of the silicon carbide particle reinforced aluminum-based composite material. According to the preparation method, a ceramic membrane layer is formed, so that the homogenization of chemical properties of an interface of the high-volume-fraction SiCp/Al composite material is realized, it is guaranteed that the subsequent plating is uniform in crystallization, then the porosity of the subsequent plating is reduced, and the compactness of the plating is improved.

The invention discloses a magnetron sputtering method for depositing a thin film. The method comprises the following steps that within first preset time, process gas is introduced into a reaction chamber; within second preset time, first DC bias is exerted on a target material, and lighting-up is carried out; within third preset time, introducing of the process gas is stopped; within fourth preset time, the first DC bias is increased to be second DC bias, RF bias is loaded on a lower electrode at the speed of 500 W/s-2000 W/s, and the thin film is deposited into a silicon through hole; within fifth preset time, exerting of the DC bias and the RF bias is stopped, and the process gas continues to be introduced into the reaction chamber; the steps are repeated until the thickness of the thin film meets the process requirement. The magnetron sputtering method for depositing the thin film can effectively prevent the lower portion of the reaction chamber from being lightened and ensure that the thin film can deposit in the silicon through hole smoothly.

The invention provides an electrospinning device for preparing fluffy nanometer fibers and relates to electrospinning collection devices. The electrospinning device is provided with an electrostatic spinning generating device, a collection device, an air injection device, a controller, a high-pressure air generating device and an air pressure valve; the electrostatic spinning generating device is provided with a high pressure power source and a spinning nozzle, and the positive electrode of the high pressure power source is connected with the positive electrode of the spinning nozzle; the collection device is located under the spinning nozzle, the collection device is provided with collection cloth, a coiling shaft, an uncoiling shaft and a metal mesh, the two ends of the collection cloth are wound on the coiling shaft and the uncoiling shaft respectively, and the metal mesh is located below the collection cloth and grounded; the air injection device is close to the position under the metal mesh and provided with an air injection plate, the air injection plate is provided with an air injection nozzle array, an electromagnetic flow valve is arranged below each air injection nozzle, and all air injection nozzles are gathered through an air flow pipe; the controller is connected with the electromagnetic flow valves; the air generating device is connected with the air flow pipe, serving for gathering, of the air injection device, and the air pressure valve is located between an air guide pipe of the high pressure air generating device and the air flow pipe for gathering the air injection device.

This invention relates to an oil displacement agent for oil-containing industrial circulation water and oil-containing waste water. With the total weight of the components as 100%, it comprises: main component(N-alkyl C8-24 p-imidogen benzene sulfonate anion surfactant)38%-62%, pH regulator(basic salt or alkaline) 0-12%, potentiating agent(chelant of calcium and magnesium ions) 7%-21%, reinforcing agent(neutral salt) 18%-30%. This invented oil displacement agent for oil-containing industrial circulation water and oil-containing waste water application has benefits of small amount, good oil displacement effect, non-toxic and environmental friendly, and easy biological degradation. Besides, the oil displacement agent has a synergic reinforcing effect on water treatment etching and deposition inhibition agent.

The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher.

The invention provides a long-life reference electrode suitable for a deep-sea high hydrostatic pressure environment. The reference electrode comprises a shell, which is internally provided with an inner electrode core body, a salt bridge and a diaphragm from top to bottom. The electrode is characterized in that: the salt bridge is composed of a saturated potassium chloride sol gel and potassium chloride particles that are uniformly and diffusely distributed in the saturated potassium chloride sol gel. The diaphragm is a super-microporous ceramic column. The upper end of the inner electrode core body is provided with an epoxy seal filler and is connected to an electrode lead wire that passes through the epoxy seal filler and then extends out of the shell. The lower end of the inner electrode core body contacts the upper end of the salt bridge, the lower end of which contacts one side of the super-microporous ceramic column diaphragm, and the other side of the super-microporous ceramic column diaphragm is in connection with the external environment. The invention can satisfy the electrochemical measurement requirements under a deep-sea high hydrostatic pressure environment, and can be widely applied to corrosion signal monitoring and detection, electrochemical protection, automatic control equipment probes, and the like of marine constructions, deep-sea petroleum pipelines, and deep-sea detection equipment.

The invention relates to the field of steel battery shell processing, in particular to a nickel plating method of steel belts for steel battery shells. The nickel plating method comprises the steps of unwinding the steel belts through buffering pits; removing grease dirt on the surfaces of the steel belts; sequentially carrying out cycled water washing, activating and cycled water washing; nickel pre-plating and recycling; dull nickel plating and recycling; sequentially carrying out cycled water washing, activating and cycled water washing; semi-gloss nickel plating; full-gloss nickel plating; and sequentially carrying out recycling, cycled water washing, drying and winding. Through nickel pre-plating, the sedimentation rate of nickel ions can be lowered, the porosity of the surface of a plating layer can be lowered, the binding force between the plating layer and the steel belts can be greater, and the corrosion resistance of the steel belts can be improved; dull nickel plating is used for providing a priming plating layer, the binding force of the plating layer can be increased, and the porosity of the plating layer can be lowered; semi-gloss nickel plating and full-gloss nickel plating are added, and therefore the surface brightness of products can be adjusted according to requirements of clients well; the production efficiency can be improved, the production cost of enterprises can be lowered, and the market competitive power of the products can be enhanced.

The invention belongs to the technical field of semiconductor processing and particularly relates to a film manufacturing method. The film manufacturing method is used for forming a thin film on a wafer in a sputtering mode and comprises a sputtering step. The sputtering step comprises a first sputtering stage and a second sputtering stage which are circularly conducted, and thus the density and stress of the thin film are adjusted till the thickness of the thin film meets the setting requirement. According to the film manufacturing method, the mode that a pulsed direct current is applied to a target material in a sputtering mode is adopted, the duty ratio and/or the power value of the pulsed direct current power are/is adjusted to control the deposition speed rate of the thin film, the situation that under the high power, sputtering energy is increased without increasing the deposition speed rate of the thin film is achieved, the relation between the deposition speed rate and the sputtering energy is balanced, the compactness of the thin film is improved, the deposition speed rate of thin film is properly decreased, the process time of the thin film is prolonged, the production stability is improved, and the thin film with larger stress is obtained.

The invention discloses a reboiler which comprises a cylinder and a plurality of heat exchange tubes, wherein a material inlet and a material outlet are arranged at two ends of the cylinder respectively; a steam inlet is arranged on the cylinder on the side of the material outlet; and a condensate outlet is arranged on the cylinder on the side of the material inlet. According to the reboiler, a porous layer is processed on inner surfaces of heat exchange tube substrates and the porous layer has a heating surface with increased roughness so as to form an artificial evaporating core, so that the heat transfer efficiency of the heat exchange tubes is increased. Meanwhile, longitudinal grooves are processed on the outer surfaces of the heat exchange tube substrates, circular bulges are arranged in the longitudinal grooves, longitudinal nicks are arranged on a teeth part, the thickness of a liquid film is reduced by utilizing a surface tension and then the condensation effect on the exteriors of the heat exchange tubes is improved. According to the invention, the total coefficient of heat transfer of the reboiler is above 3 times of that of a light tube reboiler; anti-scaling capacity of boiling sides of the heat exchange tubes is increased; the dirt deposition rate is less than that of a smooth tube, so that the cleaning period of the reboiler is prolonged.

The invention provides a method for plating nickel on surfaces of ceramic particles. The method comprises the following steps: fused alumina zirconia ceramic particles are polished by using an abrasive paper; and after a preset roughness is reached, the fused alumina zirconia ceramic particles are put in anhydrous alcohol, are oscillated and cleaned by using ultrasonic waves, are put in rougheningliquid for roughening after drying, are sensitized after cleaning and drying, are put in acetone solution after sensitization, are cleaned by using the ultrasonic waves, are put in activating liquidfor activation after drying, are put in chemical plating liquid for plating after cleaning and drying, and are flushed and dried after plating to obtain finished products. The method for plating nickel on the surfaces of the ceramic particles increases real surface areas of the fused alumina zirconia ceramic particles and nickel metal, so that the bonding strength between the ceramic particles andthe nickel metal is improved; the reaction efficiency is improved; the nickel plating time is shortened; and the surfaces of the fused alumina zirconia ceramic particles after plating reach the metalgloss, are uniform in nickel plating and excellent in corrosion resistance, and achieve a certain wear resistance.

The invention discloses a production technology of a fine bronzing plate with high precision and hardness. The production technology comprises the following steps : (1) loading materials; (2) chemical oil removal; (3) recycling washing; (4) electrolytic activation; (5) double cleaning; (6) nickel plating: carrying out chemical nickel plating by using a plating liquid containing 28 g / L nickel sulfate, 30 g / L sodium hypophosphite, 18 mL / L lactic acid (W = 85%), 13 g / L sodium acetate, 8 mg / L potassium iodate and purified water, adjusting the pH value of the plating liquid to 4.6-4.9, stirring at 85-91 DEG C for 3-5 min; (7) double cleaning; (8) drying; and (9) rolling. The invention employs electrolytic activation in advance and nickel preplating to substantially enhance firm combination degree of a nickel coating and a copper base and prolong service life of the bronzing plate.

The invention relates to an electrode for CO2 electrochemical reduction and preparation and application of the electrode for CO2 electrochemical reduction. The preparation process of the electrode includes the steps of soaking a substrate material into an electroplating liquid containing main salt and additives after performing impurity removal on the substrate material, and performing electrochemical deposition under inert atmosphere protection and stirring conditions to obtain the electrode with micrometer Cu particles growing on the surface. The proportion of side atoms of the Cu particlesdeposited on the substrate surface of the prepared electrode is much higher than that of corner atoms, which is beneficial to improving the coverage of CO* on the surface of the electrode and providesa favorable environment for a subsequent CO* dimerization reaction and a hydrogenation reaction; and the electrode has a significant effect of inhibiting the side reaction of hydrogen evolution and meanwhile has high C2H4 selectivity.

The invention belongs to the field of inorganic nonmetallic hard materials, and particularly relates to an Os2B3 hard material and a preparation method and application thereof. The preparation method comprises the following steps: by a mechanochemical method, with high-purity Os powder and B powder as raw materials, synthesizing Os2B3 powder at room temperature by using high-energy ball milling equipment; then, by high-temperature sintering technology, and performing compacted sintering on the synthesized Os2B3 powder under the protection of an argon atmosphere to obtain a high-compactness and high-hardness block material. By the preparation method, the Os2B3 powder is synthesized at room temperature, and the Os2B3 block material adopting a hexagonal structure and having high temperature stability is prepared. The Os2B3 material prepared by the preparation method provided by the invention can be applied to the industrial fields of cutting tools, machine manufacturing, aerospace, automobiles and the like.

The invention relates to a chemical plating solution for preparing a nickel splinter plated diamond abrasive particle, and a chemical plating method. The chemical plating solution is an aqueous solution containing nickel sulfate, sodium hypophosphate, sodium citrate, sodium acetate, a stabilizing agent, aminobenzenesulfonic acid and sodium benzenesulfinate. A layer of metallic nickel is deposited on the surface of a diamond particle by using an oxidation reduction reaction through adopting the chemical plating method to form splinter-shaped protrusions in order to prepare diamond abrasive particle with a nickel splinter layer. The abrasive particle has high specific surface area, and can be widely used in diamond tools made of a resin binder to increase the holding force between diamond and the resin and increase the heat conductivity of products of the tools in order to enhance the grinding efficiency of produced tools and prolong the life of the tools.