Graphene preparation method

Abstract

The invention provides a graphene preparation method, which combines a cathode vacuum electric arc deposition technology, an electron beam evaporation plating technology and a vacuum annealing process. According to the method, by optimizing process parameters, an amorphous carbon film with high sp3 content is deposited on the surface of a matrix, a catalyst film is subjected to evaporation platingat the surface through an electron beam, and finally annealing is performed at a temperature of 450-500 DEG C to diffuse and precipitate carbon onto the surface of the catalyst film so as to convertthe structure into the graphene structure to form the few-layer or multi-layer graphene. Compared to the existing graphene preparation process, the graphene preparation process of the invention has advantages of simpleness, easy performing, low annealing temperature and reduced cost; and the used carbon source is not the gas but the solid, and the number of the layers of graphene can be controlledby controlling the thickness of the carbon source so as to achieve the controlled preparation of graphene.

Description

Technical field [0001] The invention relates to the technical field of graphene, in particular to a preparation method for converting amorphous carbon into graphene. Background technique [0002] Graphene is made of sp 2 A two-dimensional atomic crystal with a hexagonal honeycomb crystal structure formed by the bonding of hybrid carbon atoms. Graphene is the basic unit constituting carbon nanotubes, fullerenes, and graphite bulk materials. [0003] In 2004, British scientists Novoselov and Geim used the micromechanical exfoliation method to obtain independent high-quality graphene, and discovered that graphene has unique electronic properties, thus setting off an upsurge in graphene research. Graphene has high carrier mobility and thermal conductivity, high light transmittance and good chemical stability. It has broad application prospects in many fields such as electronic devices, transparent electrode materials, energy storage materials, and functional composite materials. [000...

AI Technical Summary

Problems solved by technology

The graphene prepared by mechanical exfoliation method is of high quality, simple process, and the size reaches millimeter level, but the method takes a long time to prepare, the cost is high, and the number and size of graphene layers are uncontrollable, so it is difficult to be widely used; silicon carbide epitaxial growth method can prepare large Large-scale graphene, but silicon carbide is expensive, the preparation conditions are harsh, ultra-high vacuum is required, and the high temperature is above 1200°C; the graphene prepared by the graphite oxide reduction method has many defects; the most widely used method is chemical vapor deposition (CVD), which can realize Large-scale growth, but the carbon source of this method is carbon-containing gas, which requires pyrolysis (temperature 900 ° C ~ 1000 ° C), and there are many influencing factors, such as air pressure, flow rate, etc.

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