Method for producing sapphire surface acoustic wave transducer

A surface acoustic wave and manufacturing method technology, applied in the direction of impedance network, electrical components, etc., can solve the problems of complex manufacturing process and affecting the performance of high-frequency surface acoustic wave SAW devices, so as to ensure the processing quality, simplify the operation process and preparation process, and conduct electricity The effect of empowerment

Inactive Publication Date: 2009-09-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, there are still major problems in the existing technology: in each of these structures currently used, a conductive film must be deposited, and the conductive film is photolithographically formed into an interdi

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing sapphire surface acoustic wave transducer
  • Method for producing sapphire surface acoustic wave transducer
  • Method for producing sapphire surface acoustic wave transducer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0022] Such as figure 2 and image 3 Shown, the manufacture method of sapphire surface acoustic wave transducer of the present invention mainly comprises the following steps:

[0023] Step 101: using photoresist to photolithographically develop the SAW device pattern on the surface of the sapphire film or sapphire single crystal. In this step, if the sapphire film is selected as the material, the sapphire film 12 needs to be fixed on the silicon or silicon dioxide substrate 11 in advance. The photolithography process is first to coat photoresist on the surface of the sapphire thin film 12 or sapphire single crystal, and then use electron beam direct writing technology or ultraviolet lithography technology to expose to form the patte...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for producing a sapphire surface acoustic wave transducer, belongs to the technical field of manufacture of surface acoustic wave devices. The method comprises the following steps of: firstly lithographing and developing a graph of the surface acoustic wave transducer on the surface of a sapphire, and then adopting the ion injection method to inject metal aluminum or copper element; then depositing a polycrystalline aluminum nitride piezoelectric thin film on the surface of the sapphire after ion injection; and finally removing a photoresist and obtaining the graph of the surface acoustic wave transducer. The method greatly reduces the surface resistivity of the sapphire by injecting the ions and greatly enhances the electric conductivity, thereby replacing the original deposition of a conductive thin film. The method does not need to deposit an Al or Au thin film and does not need the etching process either. Therefore, the operation is greatly simplified, and the anti-power bearing force of the device is also greatly enhanced.

Description

technical field [0001] The invention relates to a manufacturing technology of a surface acoustic wave device, in particular to a manufacturing method of a sapphire surface acoustic wave transducer. Background technique [0002] With the development of third-generation communication technology, the frequency of use of surface acoustic wave (SAW) devices continues to increase. The development of surface acoustic wave (SAW) devices to high frequency and high performance is usually determined by two factors: one is that the interdigital transducer lines of the device are developing in a more finer direction; the other is that the SAW sound velocity of the device material is in a higher direction develop. Although the miniaturization of the device lines can directly increase the operating frequency of the device, it is the miniaturization of the lines that leads to an increase in its impedance, which directly leads to a sharp drop in its ability to withstand power. For this rea...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03H9/145H03H9/25H03H9/64
Inventor 李冬梅刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap