Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of zinc selenide with high optical quality

An optical quality, zinc selenide technology, applied in the direction of binary selenium/tellurium compounds, etc., to avoid the formation of powder, avoid rapid growth, and optimize the effect of space pressure

Active Publication Date: 2012-06-20
GRINM GUOJINGHUI NEW MATERIALS CO LTD +1
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The chemical vapor deposition process has a narrow process window for ZnSe, and it is easy to generate powder, and inclusions appear inside the material, which significantly reduces the optical quality of the product

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A method for preparing zinc selenide with high optical quality, using a chemical vapor deposition process in a high-temperature deposition furnace, the method steps are:

[0024] (1) Zinc is put into the deposition furnace;

[0025] (2) Vacuum the equipment through a vacuum pump to make the vacuum degree 2×10 4 Pa;

[0026] (3) Raise the temperature of the deposition chamber to 550°C, after the zinc melts and evaporates, continue to heat up to 750°C and keep it warm;

[0027] (4) with argon as the carrier gas of the reaction raw material gas, the H 2 Se gas and argon gas are passed into the deposition chamber, and rise to the set value H after 1 hour 2 Se gas: 1L / min, argon: 10L / min, enter the normal deposition process, zinc and H 2 The molar ratio of Se is 1, the deposition reaction occurs on the inner wall of the deposition chamber, and ZnSe begins to grow;

[0028] (5) Detect the evaporation amount of Zn every one hour (by feedbacking the evaporation amount of Z...

Embodiment 2

[0031] A method for preparing zinc selenide with high optical quality, using a chemical vapor deposition process in a high-temperature deposition furnace, the method steps are:

[0032] (1) Zinc is put into the deposition furnace;

[0033] (2) Vacuum the equipment through a vacuum pump to make the vacuum degree 2.5×10 4 Pa;

[0034] (3) Raise the temperature of the deposition chamber to 600°C, after the zinc melts and evaporates, continue to heat up to 730°C and keep it warm;

[0035] (4) with argon as the carrier gas of the reaction raw material gas, the H 2 Se gas and argon gas are passed into the deposition chamber, and rise to the set value H after 1.5 hours 2 Se gas: 1.2L / min, argon: 15L / min, enter the normal deposition process, zinc and H 2 The molar ratio of Se is 0.8, the deposition reaction occurs on the inner wall of the deposition chamber, and ZnSe begins to grow;

[0036] (5) Detect the evaporation amount of Zn every hour (by feedbacking the evaporation amount...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
infrared transmittanceaaaaaaaaaa
infrared transmittanceaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of zinc selenide with high optical quality, which belongs to the technical field of inorganic block body material preparation. The method comprises the following steps: putting zinc into a deposition furnace; pumping the vacuum; raising the temperature in a deposition chamber; using argon as carrying gas of reaction raw material gas; introducing H2Se gas and the argon into the deposition chamber through a mass flowmeter (the mol ratio of zinc to H2Se is between 0.8 and 1.2, the deposition reaction is carried out on the inner wall of the deposition chamber, and the zinc selenide begins to grow); maintaining the unchanged mol ratio of zinc to H2Se and the constant pressure in the furnace; carrying out deposition for 15 to 25 days; and then, lowering the temperature to the room temperature to obtain the zinc selenide with high optical quality. The invention effectively solves the problem of powder generation in the process of preparing the zinc selenide through chemical vapor deposition, the impurities mixed in products are eliminated, the materials have high infrared transmission rate and low absorption factor, and the optical quality is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of preparation of inorganic block materials, in particular to a preparation method of zinc selenide with high optical quality. Background technique [0002] Zinc selenide is an infrared optical material with high transmittance and low absorption coefficient. Its transmission band covers visible light, mid-infrared and far-infrared, and has good mechanical and thermal properties. It is widely used as infrared detection, Windows and lenses of imaging devices. [0003] The chemical vapor deposition process (Chemical Vapor Deposition, CVD for short) prepares ZnSe, uses Zn and H2Se as raw materials, and reacts inside the deposition chamber. The reaction principle: [0004] Zn+H 2 Se→ZnSe+H 2 ↑ [0005] The process window of ZnSe prepared by chemical vapor deposition is narrow, powder is easily generated, and inclusions appear inside the material, which significantly reduces the optical quality of the produ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04
Inventor 苏小平王铁艳张福昌霍承松魏乃光赵永田鲁泥藕付利刚
Owner GRINM GUOJINGHUI NEW MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com