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This invention relates to the field of LED technology, and particularly to a high-efficiency violet LED epitaxial structure and its growth method. The epitaxial structure, from bottom to top, includes: a patterned AlGaN template substrate and a GaN-based epitaxial layer. The patterned AlGaN template substrate sequentially includes a growth substrate, a buffer layer, an AlGaN layer, and a mask layer, wherein the mask layer is a periodically patterned mask. The GaN-based epitaxial layer sequentially includes: an AlGaN capping layer, an n-type semiconductor layer, a stress relief layer, a multi-quantum-well active region, an electron blocking layer, and a p-type semiconductor layer. The n-type semiconductor includes an Alx3Ga1-x3N layer with an Al composition of 0.01 ≤ x3 ≤ 0.05 and x3 ≥ x2. This invention effectively blocks dislocation propagation and reduces defect density through the synergistic design of the patterned AlGaN template substrate and the laterally epitaxially grown AlGaN capping layer; and achieves progressive stress relief and light absorption suppression through the gradient increase of Al composition in each layer of the all-AlGaN-based structure.