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Double-clotted-layer solar cell and making method

A technology for solar cells and manufacturing methods, applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as short service life, photoelectric performance degradation, etc., to optimize interface conditions, improve crystalline properties, and improve conversion efficiency. and service life

Inactive Publication Date: 2006-10-25
姜堰新金太阳能光伏制造有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the amorphous silicon thin film itself has an unavoidable photoelectric performance degradation phenomenon due to long-term illumination, which is called SWE (Staebler-Wronski Effect), the conversion efficiency of the double-junction amorphous silicon thin film solar cell will gradually decrease. short service life

Method used

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Embodiment Construction

[0014] figure 1 A device for producing double-junction solar cells. This device is very closely related to the coating of amorphous silicon / microcrystalline silicon solar cells on the substrate of the present invention. In the circular (square) central transfer area 1, there is a set of automated robotic arms 2, which can operate in any order with any of the eight surrounding coating areas 3, and insert or take out the cassettes with substrates. All the operation processes are controlled by switch software, and the eight coating areas 3 are connected to the central conversion area 1 by vacuum valves, which can maintain an independent vacuum state, avoid cross-contamination of coating gas generated during substrate conversion, and improve solar cells. effectiveness. One coating area 3 is used as the entrance and exit of the substrate, and the remaining seven areas have three coating areas 3 used for sputtering electrode layer, which are silver plating and metal oxide transpar...

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Abstract

This invention discloses a double-layer solar energy battery and its manufacturing method, in which, the structure of which includes a substrate-a Ag electrode layer, a metal oxide transparent conduction layer / type-n micro-crystal silicon-type-I non-crystal (12)-p-micro-crystal silicon (13) / ITO transparent conduction layer, the I layer in the bottom layer p-i-n junction is formed by micro-crystal silicon to avoid decline of photoelectric performance due to the long time illumination and layer-I in the p-i-n junction at the top is plated with non-crystal silicon to strengthen the spectrum absorption.

Description

technical field [0001] The invention relates to a double-junction solar cell and a manufacturing method thereof. Background technique [0002] At present, the use of p-i-n single-junction amorphous silicon solar cells, microcrystalline silicon solar cells, or solar cells with double-junction amorphous silicon coating structures is very common, and the conversion efficiency of double-junction amorphous silicon thin film solar cells reaches 8-10%. Since the amorphous silicon thin film itself has an unavoidable photoelectric performance degradation phenomenon due to long-term illumination, which is called SWE (Staebler-Wronski Effect), the conversion efficiency of the double-junction amorphous silicon thin film solar cell will gradually decrease. Short service life. Contents of the invention [0003] The invention provides a double-junction solar cell and a manufacturing method thereof. The solar cell manufactured by the method has high conversion efficiency and long service...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/076H01L31/077H01L31/18
CPCY02E10/547Y02E10/548Y02P70/50
Inventor 成顺康黄金鹿成砾吴娟王秀娟
Owner 姜堰新金太阳能光伏制造有限公司
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