31 results about "Ag electrode" patented technology

The invention discloses an imidazole derivative molecule modified solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a nickel oxide passivation layer, a [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, an ITO (Indium Tin Oxide) conductive glass layer and a nickel oxide passivation layer from bottom to top, the thin film solar cell is characterized in that the thin film solar cell comprises a substrate, a metal Ag electrode layer, a Cs0.05 (FA0. 95MA0. 05) 0. 95Pb (I0. 95Br0. 05) 3 narrow-band gap perovskite thin film PVSK modified by 2-(2 ', 6'-dichloroanilino)-2-imidazoline, a (6, 6)-phenyl-C61-butyric acid methyl ester electron transport layer, a 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline hole blocking layer and a metal Ag electrode layer; according to the scheme, perovskite defects are passivated through imidazole derivative molecules, double-interface passivation and crystallization regulation are achieved, the film quality is improved, and the crystal quality of the perovskite film is remarkably improved; due to effective passivation of the double interfaces, ion migration is obviously inhibited, the carrier transmission efficiency is effectively improved, and the moisture resistance of the perovskite thin film and the device stability are improved.

The present application relates to a kind of taste sensor based on electrical signal, preparation method and its detection method.Taste sensor device structure is constituted by one metal / metal oxide functional electrode and three Ag / AgCl electrodes deposited on substrate, wherein metal layer and Ag electrode are deposited on substrate by evaporation deposition, and metal oxide functional layer and AgCl layer are formed on it by electrochemical method, and taste simulation and identification function are realized by measuring the potential between metal / metal oxide functional electrode and Ag / AgCl electrode and the conductance and alternating current impedance between the other two Ag / AgCl electrodes.The taste sensor of the present application has the characteristics of simple preparation process, fast measurement response and wide application, etc.

The application belongs to the technical field of LED, and particularly discloses a quantum dot-based light-emitting micro device and a transient emulsion method sequence preparation method thereof. The application is based on a typical transient emulsion system of n-butanol-water, constructs a transient emulsion assembly sequence printing technology, controls the hydrophilic and hydrophobic of the micro-pore inside and outside of a template, utilizes the intrinsic advantage of easy limited emulsification of the transient emulsion method, and designs a printing process of the layer-by-layer assembly sequence device of the micro-pore inside layer. The light-emitting micro device with the conductive hydrophilic material (ITO) as the positive electrode, the PEDOT:PSS solution conductive polymer as the hole transport layer, the water-soluble CdSe quantum dot as the self-luminous building block, the zinc oxide nanoparticles as the electron transport layer, and the Ag electrode as the negative electrode is prepared, and the quantum dot-based self-luminous material micro chip is realized. The application can realize controllable preparation of a large area, does not need expensive equipment, and saves the cost. In addition, the application can realize rapid preparation, and provides an implementation scheme and an optimal process for low-cost, high-efficiency and controllable construction of the next generation of Micro-QLED display.

The invention relates to an MXene-BTCN memristor, a preparation method of the MXene-BTCN memristor and a data storage structure, the MXene-BTCN memristor comprises a conductive substrate layer, a metal electrode layer arranged on the conductive substrate layer and an MXene-BTCN functional layer located between the conductive substrate layer and the metal electrode layer, and the MXene-BTCN functional layer is formed by compounding MXene and an organic semiconductor BTCN. BTCN molecules are introduced into an MXene layer through a surface engineering strategy, and a stable hybrid structure is formed by utilizing the interaction between a strongly electron-withdrawing-CN group in BTCN and the surface of MXene, so that the dispersity and the electrical stability of the material are improved. By regulating and controlling the electrode material, the device can respectively realize a fast bipolar switch (Au electrode) and synaptic gradual change modulation (Ag electrode), and has the functions of nonvolatile storage and brain-like calculation. The method not only has an application prospect in the field of high-performance storage, but also can be used for constructing a high-precision brain-like computing system.

The application discloses a CZTSSe thin film solar cell for regulating Na diffusion path and a preparation method thereof, and relates to the technical field of solar cells. The cell is sequentially provided with a SLG / SiO2 / Mo substrate assembly, a CZTSSe absorption layer, a CdS buffer layer, an intrinsic zinc oxide layer, an ITO window layer and an Ag electrode from bottom to top. The application realizes controllable regulation of the Na diffusion path by arranging the SiO2 barrier layer, realizes one-way diffusion of Na from top to bottom (SLG / SiO2 / Mo substrate), and solves the problems of uncontrollable Na diffusion and uneven distribution in the prior art. The Na2S2O3 aqueous solution is used as a front interface Na source, has small corrosion on the surface of the CZTS precursor, can accurately regulate the content of Na element, and effectively improves the crystal interface and bulk phase quality of the CZTSSe absorption layer.

The invention provides a thin film optimization method for a mixed cation-based perovskite thin film solar cell, and the method comprises the steps: cleaning an ITO conductive glass sheet, then respectively preparing a MeO-2PACz solution, a perovskite precursor solution, a PC61BM solution and a BCP solution, then sequentially preparing a hole transmission layer, a perovskite thin film layer, an electron transmission layer and a hole blocking layer on the ITO conductive glass sheet, and finally preparing the mixed cation-based perovskite thin film solar cell. And finally, the mixed cation-based perovskite thin film solar cell is obtained after evaporation of the Ag electrode, the technological conditions of the perovskite thin film layer are optimized, the compactness of the optimized perovskite thin film is remarkably improved, the defects of the thin film are effectively inhibited, and the uniformity of the film thickness is accurately regulated and controlled, so that the carrier recombination and transmission process is balanced. According to the solar cell prepared based on the thin film, the photoelectric conversion efficiency PCE is improved to 21.25%, the open-circuit voltage Voc reaches 1.14 V, the short-circuit current density Jsc is increased to 23.70 mA / cm < 2 >, and the fill factor (FF) is improved to 79.13%.

The invention provides a hydrogel-fabric composite electrode and a preparation method and application thereof, and belongs to the technical field of health monitoring. The preparation method of the composite electrode comprises the following steps: dissolving polyvinyl alcohol in water, then adding sodium alginate, gelatin and glycerol, and uniformly mixing to obtain a hydrogel precursor solution; the method comprises the following steps: carrying out surface pretreatment on a sewing thread, immersing the sewing thread in a mixed aqueous solution containing gelatin, silver salt and alkali, adding a reducing agent under a heating condition, and generating and growing a silver nanowire on the surface of the sewing thread in situ to obtain a silver nanowire modified sewing thread; fixing the sewing threads modified by the silver nanowires on the surface of the fabric to obtain a fabric Ag electrode; and covering the hydrogel precursor solution with a fabric Ag electrode, and then freezing and unfreezing to obtain the hydrogel-fabric composite electrode. The composite electrode has the advantages of low impedance and high moisture retention, can be used for long-time, continuous and dynamic electrocardiogram monitoring, and has the effect of stably collecting high-signal-to-noise-ratio electrocardiogram signals.

The invention belongs to the technical field of semiconductors, and discloses a self-rectification biological memristor and a preparation method thereof, and the self-rectification biological memristor comprises a bottom electrode layer, a memristive function layer and a top electrode layer which are sequentially compounded; the bottom electrode layer is a PEDOT: PSS (poly (3, 4-ethylenedioxythiophene)-polystyrolsulfon acid) film, and the memristive functional layer is an SP (fibroin) (at) Ag + film; the rectification ratio of the self-rectification biological memristor is 1.3 * 10 < 3 >-1.7 * 10 < 4 > under the conditions that the limiting current is 0.1 mA and the voltage test range is-2.0-2.0 V; the preparation method of the self-rectification biological memristor comprises the following steps: spin-coating one side surface of the PEDOT: PSS film with an SP (at) Ag < + > solution, then performing ethanol soaking and drying to form an SP (at) Ag < + > film, and finally depositing the Ag electrode layer on the SP (at) Ag < + > film to prepare the self-rectification biological memristor. The preparation method is simple and easy to implement; the manufactured self-rectification biological memristor can restrain the leakage current problem of the biological memristor in high-density integration and achieve a high rectification ratio.

The invention relates to the technical field of solar cells, and discloses a method for improving the laser-assisted sintering reliability of a solar cell and the solar cell. The method comprises the following steps of: performing forward bias process treatment on the solar cell subjected to metallization process treatment to force other cations (such as H < + >) around a metal positive electrode such as Ag < + > to be far away from the metal positive electrode and the surface of the cell so as to prevent other cations such as H < + > from snatching e <->; by matching with LECO process treatment, Ag < + > obtains more e <-> and is reduced and converted into an Ag electrode, so that the process effect advantage of LECO can be better played, and the reliability of the LECO process is improved; and the bonding property of H < + > and e <-> can be greatly reduced, the conversion processes of e <-+ > H < + >-> H and H < + > H-> H2 are effectively avoided, and further the problems that the passivation anti-reflection film is broken due to hydrogen overflow and the electrical properties (such as Voc, FF and Eta) of the battery are reduced due to reduction of elementary substance H and the like can be avoided.

The invention discloses an artificial-biological synapse coupled photoelectric memristor for a brain-computer interface and a preparation method and application of the artificial-biological synapse coupled photoelectric memristor, and belongs to the technical field of brain-computer interfaces. The artificial-biological synapse coupled photoelectric memristor for the brain-computer interface comprises an FTO substrate, and a ZnO thin film, a MnO2 thin film and an Ag electrode which are sequentially sputtered and deposited on the FTO substrate, and the FTO substrate and the Ag electrode are respectively used as a lower electrode and an upper electrode. The artificial-biological synapse coupled photoelectric memristor stably responds to light with the wavelength of 365 nm and light with the wavelength of 395 nm. The artificial-biological synapse coupled photoelectric memristor has a good application prospect in the field of electronic devices such as brain-computer interfaces, flexible electronic device integration and implantable electronic equipment. The method and the device are used for solving the technical problems of insufficient function compatibility and signal matching between an artificial synapse and a biological synapse based on a memristor.

The application discloses a beta-Ga2O3 / Yb2O3 heterojunction self-driven detector for solar blind ultraviolet light communication and relates to the technical field of photoelectric detectors. From bottom to top, the beta-Ga2O3 / Yb2O3 heterojunction self-driven detector comprises a sapphire substrate, a beta-Ga2O3 film layer, a Yb2O3 film layer and an Ag electrode in sequence; the beta-Ga2O3 film layer and the Yb2O3 film layer form a beta-Ga2O3 / Yb2O3 heterojunction structure. The band gaps of beta-Ga2O3 and Yb2O3 are 4.9 eV and 5.4 eV, and the corresponding light absorption cutoff wavelengths are 254 nm and 229 nm, respectively, which are located in the solar blind ultraviolet band. The beta-Ga2O3 / Yb2O3 heterojunction has a type-II band arrangement structure, which is beneficial to the separation of photo-generated carriers, the improvement of the light response of the device and the self-driven detection of solar blind ultraviolet light. The self-driven solar blind ultraviolet light communication system constructed based on the beta-Ga2O3 / Yb2O3 heterojunction has a high signal-to-noise ratio and high anti-interference capability and only responds to solar blind light. The heterojunction film constructed by the application is prepared by using the plasma enhanced chemical vapor deposition technology and the sol-gel method, has good process controllability and repeatability, is low in cost and can be prepared in large quantities.

The application discloses a method for preparing a high-efficiency and stable CsPbI3 inorganic perovskite solar cell in an atmospheric environment, and comprises the following steps: using low-temperature SnO2 modified by an alkali metal halide salt as an electron transport layer, dropping a perovskite precursor solution containing a certain amount of benzylamine salt additive on the electron transport layer through a spin coating technology, adopting a two-step annealing method, adjusting the concentration of the additive, and realizing the preparation of a dense and uniform CsPbI3 thin film in a full-air environment, then spin-coating Spiro-OMeTAD as a hole transport layer and vacuum evaporation of an Ag electrode to obtain the preparation of the high-efficiency and stable CsPbI3 inorganic perovskite solar cell. The application realizes the low-energy-consumption preparation of the dense and uniform CsPbI3 inorganic perovskite solar cell under low environmental requirements, and has an excellent photoelectric conversion efficiency of 17.24%.

This invention discloses a Schottky diode based on cubic boron nitride (c-BN) single crystal material. The fabrication method includes the following steps: A cleaned bulk c-BN single crystal is covered with tape, exposing only the area to be plated with electrodes. An Au metal electrode is deposited on one side of the bulk c-BN single crystal, and then the tape is removed. In a glove box, the oxide layer on the surface of a lithium sheet is scraped off, and the sheet is placed on the Ag-plated side of a PCB board. The unplated side of the bulk c-BN single crystal is then tightly attached to the lithium sheet. Fine metal wires are used to connect and fix the Ag electrode on the PCB board to the Au electrode on the bulk c-BN single crystal. After electrochemical doping, an Au metal electrode is deposited on the lithium-doped side of the c-BN crystal. In this invention, lithium atoms are introduced onto the c-BN surface, and their energy levels are located at shallow levels, thereby effectively improving the interfacial contact quality between the metal and c-BN. This improvement further reduces the contact barrier ΦB between the c-BN single crystal and the metal by reducing the interfacial state density.

The invention provides an application method of an ALD-SnO2 electron transport layer in a large-area trans-perovskite assembly, which comprises the following steps of: 1, performing ultrasonic cleaning on a transparent conductive substrate greater than or equal to 10cm * 10cm by using an alkaline detergent, rinsing by using deionized water, dehydrating by using isopropanol, and performing ultraviolet ozone treatment for 20-30 minutes to remove organic residues; 2, tetrabutyltin and deionized water are used as precursors in an ALD reaction cavity, a SnO2 bottom layer is deposited at 140-180 DEG C, tin source pulse is carried out for 0.8-1.2 s, oxygen source pulse is carried out for 0.3-0.6 s, purge is carried out for 8-12 s, and circulation is carried out 60-90 times till the wavelength is 6-9 nm; 3, trimethylaluminum is introduced, aluminum source pulse is linearly and progressively increased for 0.02-0.1 s to achieve 0.5%-2% gradient doping, and a 3-5 nm layer is formed through 40-70 times of circulation; 4, after oxygen plasma treatment is conducted for 6 min to 12 min, a 0.15 mg / mL to 0.25 mg / mL 2-mercaptopyrimidine ethanol solution is spin-coated, and annealing is conducted for 12 min to 18 min at the temperature ranging from 90 DEG C to 110 DEG C; and step 5, preparing a perovskite layer with the assistance of a gas phase, and sequentially depositing a NiOx electrode and an Ag electrode to complete the assembly. The method solves the problems that the existing ALD-SnO2 is limited in application precursor selection, single in doping strategy and poor in large-area adaptability.

This invention discloses a method for fabricating a base metallized electrode thermistor and the thermistor itself, relating to the field of thermistor technology. The thermistor comprises, from the inside out, a thermistor core, a copper-based composite electrode layer, leads, a cover, and an outer encapsulating resin. The invention utilizes a copper-based composite electrode layer with a high proportion of copper, supplemented with silver and nickel. Silver significantly improves conductivity and solderability, while nickel enhances oxidation resistance through solid solution strengthening, making it more similar to the ceramic material of the thermistor core. This alleviates stress accumulation during temperature cycling. Combined with the triple conductive path of leads, cover, and electrode layer, this not only increases the solder contact area and improves soldering reliability but also ensures a stable electrical connection. Through this synergistic effect, the solution significantly improves the long-term reliability of the thermistor under repeated thermal cycling while maintaining its performance, and successfully replaces the silver electrode with a copper electrode.

The invention discloses a method for selectively depositing a vitrification insulating layer on the surface of a ZnO varistor. The method comprises the following steps: firstly, depositing a coupling layer and a non-stick layer on the surface of an Ag electrode; uniformly depositing glass powder on the surface of the whole varistor in a spraying manner; after drying, the glass powder on the surface of the outer electrode is removed in a vibration friction mode, and the glass powder on the surface of the ceramic is still firmly adhered; and finally, through high-temperature calcination, the Ag electrode is exposed again by decomposing the organic coupling layer and the non-stick layer, and the glass powder is fused on the ceramic surface to form a compact film. According to the method, the vitrification insulating layer can be uniformly deposited on the ceramic surface and is not deposited on the surface of the Ag electrode, so that the conductivity of the surface of the Ag electrode is ensured. The formed firm and reliable glass insulating layer can inhibit the overplating phenomenon in the electroplating process.

The invention relates to the technical field, and provides a double-sided black film structure for a vehicle-mounted laser radar window and a preparation method, and the double-sided black film structure sequentially comprises a transparent substrate which is provided with a visual window area; the black film layer is arranged on the transparent substrate and located around the visual window area; the black film layer is formed by alternately sputtering a high-refractive-index material and a low-refractive-index material; the transparent ITO film is arranged on the black film layer and covers the visual window area; the Ag electrode is arranged on the transparent ITO film and is positioned around the visual window area; the ink is arranged on the Ag electrode by avoiding the visual window area; and the antireflection film is arranged in the visual window area of the Ag electrode. Through the new film system design, double-sided black display and ultrahigh visible light absorption (the average transmittance is lower than 0.1%) are realized, stray light reflection (the average reflectivity is lower than 0.2%) and dazzle light phenomena are effectively inhibited, and the ranging precision of the laser radar is improved.

The invention discloses a passivation contact silicon-based efficient solar cell based on graphene and a preparation method and application thereof. The passivation contact solar cell comprises a substrate, an n + emitter, a first SiO2 passivation layer, a SiNx antireflection layer and an Ag grid are sequentially arranged on the front face of the substrate from inside to outside, and a second graphene / Nafion passivation layer, a MoOx layer and an Ag electrode are sequentially arranged on the back face of the substrate from inside to outside. The effective hole selective contact solar cell is prepared through simple spin coating and thermal evaporation technologies, so that high conversion efficiency is realized, the preparation is simple, the preparation cost is low, the time cost is low, and the method can be widely applied to preparation of TOPCon solar cells.

The invention discloses a near-infrared small molecule modified perovskite photovoltaic device and a preparation method thereof, and belongs to the technical field of solar cells. The near-infrared small molecule modified perovskite photovoltaic device comprises an ITO (Indium Tin Oxide) conductive glass layer, a hole transport layer, a near-infrared molecule modified Cs0.05 (FA0.85 MA0.05) 0.95 Pb (I0.95 Br0.05) 3 perovskite film, an electron transport layer, a hole blocking layer and a metal Ag electrode layer from bottom to top in sequence. According to the method, crystallization of perovskite can be regulated and controlled by adopting a modification strategy of near-infrared small molecules, crystal growth of the perovskite in the spin-coating stage is delayed, a good bottom interface is provided, the grain size of the perovskite is increased, holes are reduced, the overall film quality is improved, and the defect density is reduced. And the energy level of the perovskite is effectively adjusted through near-infrared small molecule processing, and the extraction of interface charges is promoted.

The invention discloses a cross-shaped nanowire flexible silicon-based hybrid solar cell, which integrates the self-condensation characteristic of a silicon nanowire so as to improve the open-circuit voltage, and integrates the flexibility of an ultrathin flexible silicon-based solar cell so as to improve the open-circuit voltage. The defect of weak light absorption of the ultrathin flexible silicon-based solar cell is relieved to a certain extent; the solar cell mainly comprises a cross-shaped silicon nanowire array, an ultrathin flexible silicon substrate, a PDMS film, a PEDOT: PSS hole transport layer material, a front surface ITO transparent electrode and a back surface Ag electrode. According to the cross-shaped silicon nanowire solar cell, the weak light absorption can be improved, the open-circuit voltage is increased, and the cross-shaped silicon nanowire solar cell can adapt to more future application scenes.

The invention discloses a method for preparing a high-efficiency double-electron-layer perovskite solar cell, and the method comprises the following steps: employing a compact ultrathin TiO2 layer which is prepared in the air through a spray pyrolysis method and SnO2 which is passivated by a hydroxyacid salt with a proper concentration as a double-electron transmission layer, and sequentially preparing an FA 0.15 MA0.85 PbI3 perovskite layer and a Spiro-OMeTAD hole layer through a spin-coating technology, and carrying out vacuum evaporation on an Ag electrode to obtain the high-efficiency double-electron-layer perovskite solar cell. According to the method, efficient passivation of the TiO2 / SnO2 / perovskite three layers is achieved, the low-defect perovskite solar cell is prepared in the air, and the excellent photoelectric conversion efficiency of 20.65% is achieved.

The invention relates to a preparation method of a self-driven ultraviolet photoelectric detector based on a ZnO nanorod array, and the method comprises the following steps: growing a ZnO seed layer on a glass substrate with ITO as a bottom electrode, then growing a ZnO nanorod array doped with Mg < 2 + > on the seed layer, and then attaching Pt nanoparticles to the surfaces of nanorods to obtain a Pt-modified ZnO: Mg (at) Pt array; next, NiO is sputtered to the surface of the nanorod, and a ZnO: Mg (at) Pt / NiO core-shell array is obtained after annealing; then uniformly spin-coating PEDOT: PSS on the upper part of the core-shell array, and after the PEDOT: PSS is dried, obtaining a ZnO: Mg (at) Pt / NiO / PEDOT: PSS array; and finally, growing a layer of Ag electrode on the surface of the PEDOT: PSS to obtain the ZnO: Mg (at) Pt / NiO / PEDOT: PSS / Ag ultraviolet photoelectric detector. The ultraviolet photoelectric detector has the advantages of self-driving function, low dark current, high light and dark current ratio and high response speed.

The application discloses a perovskite solar cell with a rare earth ion modified hole transport layer, which comprises, from bottom to top, an ITO conductive glass layer, a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) hole transport layer, a CeCl3 hole modification layer, a MAPbI 2.91 Br 0.09 a perovskite layer (PVSK), a 9-octadecenyl-iodoamine (OAmI) perovskite transport layer, a [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) electron transport layer, a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) hole blocking layer and a metal Ag electrode layer. The scheme modifies the hole transport layer by using a rare earth ion, thereby regulating the growth of the perovskite film, and has the advantages of improved film quality, enhanced crystallinity, inhibited carrier recombination, shortened hole extraction time and high stability.

The invention discloses an inversion perovskite solar cell based on an optimized hole transport layer and a preparation method thereof, and belongs to the technical field of inversion perovskite solar cells. The structure of the perovskite solar cell sequentially comprises an ITO conductive film, an optimized NiOX hole transport layer, a 2PACz monomolecular self-assembly layer, a perovskite layer, a perovskite passivation layer, a C60 electron transport layer, a BCP interface modification layer and an Ag electrode on a glass substrate from bottom to top. Nickel nitrate, sodium hydroxide and iminodiacetic acid are used as raw materials, an iminodiacetic acid complexing agent is added into a sodium hydroxide solution in the nickel oxide synthesis process, nickel metal ions preferentially react with the complexing agent, the acid-base reaction and Ni (OH) 2 precipitation speed is delayed, the difficulty that NO3 <-> impurity ions are embedded into precipitates is increased, and the nickel oxide is synthesized. Therefore, the existence of impurities is reduced, the proportion of Ni < 3 + > / Ni < 2 + > is improved, and the hole conductivity is improved, so that the performance of a perovskite solar cell device is improved.

The application discloses an inverted top-emitting QLED device and a preparation method and application thereof. The application provides an inverted top-emitting QLED device, which comprises, from bottom to top, a first electrode, an electron transport layer, a quantum dot light-emitting layer, an interface modification layer, a hole transport layer, a hole injection layer, a seed layer and a second electrode which form a composite electrode. The seed layer can promote the uniform growth of the Ag electrode, and avoids discontinuous film growth. Meanwhile, the seed layer can relieve the energy level mismatch between the functional layer and the Ag electrode and reduce the hole injection barrier as a transition layer between the other functional layer and the Ag electrode.

The invention discloses a PEDOT: PSS / n-Si solar cell doped with MoS2 quantum dots and a preparation method of the PEDOT: PSS / n-Si solar cell. The preparation method comprises the following steps: (1) preparing an N-type silicon wafer to prepare a photovoltaic device; (2) adding the MoS2 quantum dot aqueous solution or powder, dimethyl sulfoxide (DMSO) and a surfactant (Triton X-100) into the PEDOT: PSS aqueous solution, and stirring to obtain a precursor solution; and (3) preparing an HF solution for removing oxides on two sides of the silicon wafer. And then cleaning the residual HF acid solution on the silicon wafer by using deionized water, and finally purging and drying the silicon wafer by using nitrogen. And (4) spin-coating the precursor solution prepared in the step (2) on the single side of a silicon wafer, and then annealing to form a film. And (5) preparing the front silver electrode of the silicon wafer on the PEDOT-MoS2 film of the sample obtained in the step (4). And (6) depositing a whole-surface Ag electrode on the other side of the silicon wafer. The battery manufacturing method is simple and easy to implement, and can be used for large-scale production.

The invention relates to the technical field of semiconductor photoelectric devices, in particular to an organic phototransistor based on a double-trap system and a preparation method of the organic phototransistor, the device structure is Si / SiO2 / CNT / PMMA (45nm) / PM6: Y6 (200nm) / Ag electrode (110nm), an active layer adopts a non-fullerene material Y6 as an acceptor, the acceptor and a donor PM6 are mixed to form a non-fullerene system bulk heterojunction, and the non-fullerene system bulk heterojunction is used as an active layer. And meanwhile, a carbon nanotube (CNT) is added into the insulating layer as a trap layer, so that direct contact between the CNT and the active layer is avoided, a spatially separated double-trap system is formed with the active layer Y6, and the photoelectric detection performance of the organic phototransistor is improved. Therefore, the problem that the photoelectric detection performance of an existing organic photosensitive transistor is low is solved.

The application provides a kind of based on three cationic perovskite light-absorbing layer's semi-transparent perovskite solar cell and preparation method thereof, the cell is sequentially provided with conductive glass, NiO hole transport layer, SAM hole transport layer, Cs 0.05 FA 0.85 MA 0.1 PbI x Br 3‑x Perovskite light-absorbing layer, PCBM electron transport layer, BCP interface modification layer and metal electrode;The preparation of perovskite light-absorbing layer is as follows: PbI2, PbBr2, FAI, MAI, CsI are dissolved into DMF and DMSO mixed solution, the amount-of-substance ratio of each component is (PbI2+PbBr2): FAI: MAI: CsI is 1.7115: 1.3855: 0.163: 0.0815;Then 9mol% MACl is doped, and rotary stirring is carried out until complete dissolution, to obtain perovskite precursor solution, which is coated on the surface of the substrate, and then annealed to obtain;Metal electrode includes core induction layer and Ag electrode layer, the material of core induction layer is Au, Cu or Al, and the thickness is 1nm, and the thickness of Ag electrode layer is 7-16nm.The application improves the light transmittance of perovskite light-absorbing layer and metal electrode and the conductivity of metal electrode, thereby effectively balancing the light transmittance and conversion efficiency of semi-transparent perovskite battery.

The invention discloses a pyridine-3, 5-dicarboxylic acid modified / doped all-inorganic perovskite solar cell and a preparation method thereof, and belongs to the technical field of perovskite solar cells. The method comprises the following steps: preparing a planar TiO2 electron transport layer on a substrate; the method comprises the following steps: dissolving pyridine-3, 5-dicarboxylic acid powder in DMF (Dimethyl Formamide) to prepare a pyridine-3, 5-dicarboxylic acid solution; a pyridine-3, 5-dicarboxylic acid solution is dropwise added to the upper portion of the planar TiO2 electron transport layer for spin coating, then heat treatment is carried out to complete crystallization, and a pyridine-3, 5-dicarboxylic acid modified layer is prepared; or when the planar TiO2 electron transport layer is prepared on the substrate, pyridine-3, 5-dicarboxylic acid powder is added into a TiCl4 ice water solution to prepare a complex water solution, and the pyridine-3, 5-dicarboxylic acid doped TiO2 electron transport layer is prepared; and preparing a CsPbI < 3-x > Brx perovskite light absorption layer and a Spiro-OMeTAD hole transport layer on the pyridine-3, 5-dicarboxylic acid modified layer or the pyridine-3, 5-dicarboxylic acid doped TiO2 electron transport layer in sequence, and evaporating a layer of Ag electrode on the top to prepare the pyridine-3, 5-dicarboxylic acid modified / doped all-inorganic perovskite solar cell.

The invention discloses a perovskite solar cell based on a hydrogen peroxide oxidized Spiro-OMeTAD hole transport layer and a preparation method of the perovskite solar cell, and belongs to the field of perovskite solar cells. The perovskite solar cell is composed of an ITO conductive glass substrate, a SnO2 electron transport layer, a perovskite active layer, a 2-(cyclohex-1-ene-1-yl) ethane-1-ammonium iodide surface passivation layer, a hydrogen peroxide oxidation Spiro-OMeTAD hole transport layer, a MoO3 layer and an Ag electrode. According to the method, the Spiro-OMeTAD solution is oxidized in advance by hydrogen peroxide instead of low-humidity air, and then the Spiro-OMeTAD film is oxidized, so that the prepared hole transport layer has more uniform conductivity, energy level distribution and charge transport capability, and the method prevents water and oxygen in the air from diffusing to the inside through the hole transport layer in the oxidation process, thereby improving the hole transport efficiency. And the perovskite thin film is contacted and degraded, so that the efficiency and the stability of the perovskite battery are improved.