67 results about "Ag electrode" patented technology

The invention discloses a thiapyran molecule modified solar cell and a preparation method thereof. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a 4-aminotetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, a Cs0.05 (FA < 0.77 > MA < 0.23 >) < 0.95 > Pb < (I < 0.77 > Br < 0.23 >) 3 wide-band gap perovskite thin film, a phenethyl ammonium iodide passivation layer, an electron transport layer of [6, 6]-phenyl-C61-butyric acid isomethyl ester, a 2, 9-dimethyl-4, 6, 7-tetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] the hole barrier layer is made of 1, 7-biphenyl-1, 10-phenanthroline; the electrode layer is made of metal Ag; according to the scheme, the hole transport layer is modified through thiapyran molecules, agglomeration of the hole transport layer is relieved, and a more compact and more uniform self-assembled single layer is generated by inducing favorable crystal orientation. A good bottom interface is obtained based on thiapyran molecule modification, and ordered growth of high-quality perovskite crystal grains is promoted. In addition, the energy level of the hole transport layer is effectively adjusted through thiapyran molecule treatment, and the extraction and transmission of carriers by the hole transport layer are enhanced.

The invention discloses a near-infrared flexible polarized photoelectric detector and a preparation method thereof. The photoelectric detector comprises an Sb2Se3 micron wire, a PET flexible substrate, a metal Ag electrode, a silver wire and polydimethylsiloxane (a PDMS mixture). According to the preparation method, an effective metal-semiconductor-metal (M-S-M) structure is constructed by combining the Sb2Se3 micron wire and the Ag electrode, curing packaging is carried out by adopting a PDMS mixture, the incident light transmittance is improved, meanwhile, the response speed of a device can be greatly improved through ohmic contact formed by the micron wire and the Ag electrode, and the power loss of the device is remarkably reduced. Compared with the prior art, the detector provided by the invention still keeps a stable and high extinction ratio under mechanical bending deformation, and realizes sensitive polarization, quick response and stable performance of a near-infrared band at the same time.

The invention discloses an efficient and stable perovskite solar cell prepared based on modified lead iodide and a preparation method thereof, and belongs to the technical field of new energy manufacturing, the solar cell comprises an FTO substrate, and a TiO2 electron transport layer, a perovskite light absorption layer, a PEAI modification layer, a Spiro-OMeTAD hole transport layer and an Ag electrode are sequentially arranged on the conductive surface of the substrate. According to the method, the lead iodide is modified through the pentylamine acetic acid (PenAAc), the low-defect and high-quality perovskite thin film is prepared, so that high conversion efficiency is achieved, the whole process is simple in preparation, low in preparation cost and low in time cost, and the method can be widely applied to preparation of the perovskite solar cell through a two-step method.

The invention discloses an imidazole derivative molecule modified solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a nickel oxide passivation layer, a [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, an ITO (Indium Tin Oxide) conductive glass layer and a nickel oxide passivation layer from bottom to top, the thin film solar cell is characterized in that the thin film solar cell comprises a substrate, a metal Ag electrode layer, a Cs0.05 (FA0. 95MA0. 05) 0. 95Pb (I0. 95Br0. 05) 3 narrow-band gap perovskite thin film PVSK modified by 2-(2 ', 6'-dichloroanilino)-2-imidazoline, a (6, 6)-phenyl-C61-butyric acid methyl ester electron transport layer, a 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline hole blocking layer and a metal Ag electrode layer; according to the scheme, perovskite defects are passivated through imidazole derivative molecules, double-interface passivation and crystallization regulation are achieved, the film quality is improved, and the crystal quality of the perovskite film is remarkably improved; due to effective passivation of the double interfaces, ion migration is obviously inhibited, the carrier transmission efficiency is effectively improved, and the moisture resistance of the perovskite thin film and the device stability are improved.

The invention belongs to the technical field of photoelectric devices, and discloses a bias voltage regulated MoS2 / PbS heterojunction photoelectric device, which is characterized in that FTO glass is used as a conductive substrate, a MoS2 film and a PbS film are sequentially grown on the surface of the FTO glass, the PbS film forms a three-dimensional skeleton coating type structure for MoS2, and two Ag electrodes are deposited on the PbS film and the FTO glass. The photoelectric device disclosed by the invention integrally realizes two performances of neuromorphic photoelectric synapse and broadband photoelectric detection; the synapse characteristic of the device comes from modulation of interface defects, and advanced synapse functions such as short and long term memory conversion (STM / LTM), repeated learning and forgetting and the like of light regulation are realized; the excellent detection performance of the device comes from rapid separation of heterogeneous interface carriers. The preparation process of the photoelectric device is simple, the large-area film can be suitable for industrial production, and development in the fields of simulation of human optic nerve memory and detection from ultraviolet to short wave infrared bands is expanded.

The invention provides a light-emitting diode and a light-emitting device.The light-emitting diode comprises a semiconductor laminated layer, an insulating reflecting layer and an electrode structure, a first opening and a second opening are formed in the insulating reflecting layer, a second electrode in the electrode structure comprises a second contact electrode, the second contact electrode comprises an Ag material layer, and the Ag material layer is arranged between the first opening and the second opening. And a second semiconductor layer formed over the second semiconductor layer. For example, the second contact electrode can be an Ag electrode with relatively high reflectivity and can play a reflecting role, so that the reflectivity loss at the opening of the insulating reflecting layer is made up, and the light emitting effect of the light emitting diode is improved. Meanwhile, the second contact electrode can form good ohmic contact with the current diffusion layer, and the electrical performance of the light-emitting diode is improved.

The invention discloses a rectification memristor with a synaptic simulation function and application thereof, and belongs to the field of artificial intelligence. The memristive device adopts a sandwich structure and is sequentially composed of an upper Ag electrode, an AgI and PbI2 functional layer and a lower ITO electrode. The memristor provided by the invention has a rectification characteristic, effectively solves the sneak current problem in crossbar integration, and ensures accurate reading of device data in an array. Meanwhile, good nerve synaptic functions including dipulse suppression, dipulse simplification, long and short range memory response and synaptic weight plasticity are achieved under circulating electric pulses, and human brain nerve synaptic processing, learning and working behaviors and the like can be simulated. According to the invention, the PbI2 material is successfully applied to integration of multiple functions of rectification, storage and neuromorphic simulation for the first time, and a new possibility is developed for application in the fields of neuromorphic simulation and artificial neural networks.

A perovskite solar cell based on a 1,4-diiodotetrafluorobenzene doped hole transport layer and a preparation method thereof, belonging to the technical field of perovskite solar cells. 2 The present invention comprises an electron transport layer, a perovskite active layer, a phenethylammonium iodide surface passivation layer, a spiro-OMeTAD hole transport layer and an Ag electrode. The present invention dopes 1,4-diiodotetrafluorobenzene into the spiro-OMeTAD hole transport layer, and utilizes the halogen bond formed between 1,4-diiodotetrafluorobenzene and the dopant TBP in spiro-OMeTAD to inhibit the corrosion of TBP on the perovskite, thereby reducing the defect density of the perovskite film. At the same time, the dedoping effect of spiro-OMeTAD induced by TBP is inhibited, the conductivity of the spiro-OMeTAD film is stabilized, and the charge can be well transmitted, thereby improving the performance of the perovskite battery device.

The present application relates to a kind of taste sensor based on electrical signal, preparation method and its detection method.Taste sensor device structure is constituted by one metal / metal oxide functional electrode and three Ag / AgCl electrodes deposited on substrate, wherein metal layer and Ag electrode are deposited on substrate by evaporation deposition, and metal oxide functional layer and AgCl layer are formed on it by electrochemical method, and taste simulation and identification function are realized by measuring the potential between metal / metal oxide functional electrode and Ag / AgCl electrode and the conductance and alternating current impedance between the other two Ag / AgCl electrodes.The taste sensor of the present application has the characteristics of simple preparation process, fast measurement response and wide application, etc.

The application belongs to the technical field of LED, and particularly discloses a quantum dot-based light-emitting micro device and a transient emulsion method sequence preparation method thereof. The application is based on a typical transient emulsion system of n-butanol-water, constructs a transient emulsion assembly sequence printing technology, controls the hydrophilic and hydrophobic of the micro-pore inside and outside of a template, utilizes the intrinsic advantage of easy limited emulsification of the transient emulsion method, and designs a printing process of the layer-by-layer assembly sequence device of the micro-pore inside layer. The light-emitting micro device with the conductive hydrophilic material (ITO) as the positive electrode, the PEDOT:PSS solution conductive polymer as the hole transport layer, the water-soluble CdSe quantum dot as the self-luminous building block, the zinc oxide nanoparticles as the electron transport layer, and the Ag electrode as the negative electrode is prepared, and the quantum dot-based self-luminous material micro chip is realized. The application can realize controllable preparation of a large area, does not need expensive equipment, and saves the cost. In addition, the application can realize rapid preparation, and provides an implementation scheme and an optimal process for low-cost, high-efficiency and controllable construction of the next generation of Micro-QLED display.

The invention relates to an MXene-BTCN memristor, a preparation method of the MXene-BTCN memristor and a data storage structure, the MXene-BTCN memristor comprises a conductive substrate layer, a metal electrode layer arranged on the conductive substrate layer and an MXene-BTCN functional layer located between the conductive substrate layer and the metal electrode layer, and the MXene-BTCN functional layer is formed by compounding MXene and an organic semiconductor BTCN. BTCN molecules are introduced into an MXene layer through a surface engineering strategy, and a stable hybrid structure is formed by utilizing the interaction between a strongly electron-withdrawing-CN group in BTCN and the surface of MXene, so that the dispersity and the electrical stability of the material are improved. By regulating and controlling the electrode material, the device can respectively realize a fast bipolar switch (Au electrode) and synaptic gradual change modulation (Ag electrode), and has the functions of nonvolatile storage and brain-like calculation. The method not only has an application prospect in the field of high-performance storage, but also can be used for constructing a high-precision brain-like computing system.

The invention discloses a full back contact solar cell based on nitrogen-doped silicon oxide and a preparation method thereof, the solar cell comprises an n-type silicon substrate, the front surface of the n-type silicon substrate is sequentially provided with an intrinsic amorphous silicon passivation layer (i-a-Si: H) and a SiNx antireflection layer, the back surface of the substrate is provided with a nitrogen-doped silicon oxide layer, and the nitrogen-doped silicon oxide layer is provided with a silicon nitride layer. A hole selective contact MoOx layer and an electron selective contact SnOx layer / LiF laminated layer which are periodically arranged are arranged on the back surface of the nitrogen-doped silicon oxide layer, an Ag electrode is arranged on the back surface of the MoOx layer, and an Al electrode is arranged on the back surface of the SnOx layer / LiF laminated layer. Nitrogen-doped silicon oxide is spin-coated at a low temperature, so that the passivation performance and the contact performance of the device are greatly improved. The electron selective contact SnOx layer / LiF layer laminated introduction greatly improves the electron collection efficiency. A photoetching or laser technology is not needed in the technological process, and a brand new technical strategy is provided for the full-back-contact solar cell.

The application discloses a CZTSSe thin film solar cell for regulating Na diffusion path and a preparation method thereof, and relates to the technical field of solar cells. The cell is sequentially provided with a SLG / SiO2 / Mo substrate assembly, a CZTSSe absorption layer, a CdS buffer layer, an intrinsic zinc oxide layer, an ITO window layer and an Ag electrode from bottom to top. The application realizes controllable regulation of the Na diffusion path by arranging the SiO2 barrier layer, realizes one-way diffusion of Na from top to bottom (SLG / SiO2 / Mo substrate), and solves the problems of uncontrollable Na diffusion and uneven distribution in the prior art. The Na2S2O3 aqueous solution is used as a front interface Na source, has small corrosion on the surface of the CZTS precursor, can accurately regulate the content of Na element, and effectively improves the crystal interface and bulk phase quality of the CZTSSe absorption layer.

The invention provides a thin film optimization method for a mixed cation-based perovskite thin film solar cell, and the method comprises the steps: cleaning an ITO conductive glass sheet, then respectively preparing a MeO-2PACz solution, a perovskite precursor solution, a PC61BM solution and a BCP solution, then sequentially preparing a hole transmission layer, a perovskite thin film layer, an electron transmission layer and a hole blocking layer on the ITO conductive glass sheet, and finally preparing the mixed cation-based perovskite thin film solar cell. And finally, the mixed cation-based perovskite thin film solar cell is obtained after evaporation of the Ag electrode, the technological conditions of the perovskite thin film layer are optimized, the compactness of the optimized perovskite thin film is remarkably improved, the defects of the thin film are effectively inhibited, and the uniformity of the film thickness is accurately regulated and controlled, so that the carrier recombination and transmission process is balanced. According to the solar cell prepared based on the thin film, the photoelectric conversion efficiency PCE is improved to 21.25%, the open-circuit voltage Voc reaches 1.14 V, the short-circuit current density Jsc is increased to 23.70 mA / cm < 2 >, and the fill factor (FF) is improved to 79.13%.

The invention provides a hydrogel-fabric composite electrode and a preparation method and application thereof, and belongs to the technical field of health monitoring. The preparation method of the composite electrode comprises the following steps: dissolving polyvinyl alcohol in water, then adding sodium alginate, gelatin and glycerol, and uniformly mixing to obtain a hydrogel precursor solution; the method comprises the following steps: carrying out surface pretreatment on a sewing thread, immersing the sewing thread in a mixed aqueous solution containing gelatin, silver salt and alkali, adding a reducing agent under a heating condition, and generating and growing a silver nanowire on the surface of the sewing thread in situ to obtain a silver nanowire modified sewing thread; fixing the sewing threads modified by the silver nanowires on the surface of the fabric to obtain a fabric Ag electrode; and covering the hydrogel precursor solution with a fabric Ag electrode, and then freezing and unfreezing to obtain the hydrogel-fabric composite electrode. The composite electrode has the advantages of low impedance and high moisture retention, can be used for long-time, continuous and dynamic electrocardiogram monitoring, and has the effect of stably collecting high-signal-to-noise-ratio electrocardiogram signals.

The present invention discloses a floating-gate two-dimensional heterojunction memristor and its preparation method. The memristor comprises, from bottom to top, an Ag electrode layer, a SiO2 / Si substrate layer, and a MoS2 carrier transport layer. Au electrodes are provided at opposite ends of the upper surface of the MoS2 carrier transport layer. An h-BN insulating dielectric layer forms a groove corresponding to the upper surface formed by the Au electrode and the MoS2 carrier transport layer. Within the groove, the AuNPs charge capture layer, the h-BN insulating dielectric layer, and the MoS2 carrier transport layer form a two-dimensional heterojunction MoS2 / h-BN / AuNPs with impedance storage characteristics. Compared to traditional bulk-based memristors, memristive memories are constructed from zero-dimensional and two-dimensional nanomaterials and have unique advantages in miniaturization and flexibility. Considering the device's excellent information storage and erasure performance, as well as good stability and reusability, the MoS2 / h-BN / AuNPs floating-gate memristor has good development prospects and practical value.

The invention belongs to the technical field of semiconductors, and discloses a self-rectification biological memristor and a preparation method thereof, and the self-rectification biological memristor comprises a bottom electrode layer, a memristive function layer and a top electrode layer which are sequentially compounded; the bottom electrode layer is a PEDOT: PSS (poly (3, 4-ethylenedioxythiophene)-polystyrolsulfon acid) film, and the memristive functional layer is an SP (fibroin) (at) Ag + film; the rectification ratio of the self-rectification biological memristor is 1.3 * 10 < 3 >-1.7 * 10 < 4 > under the conditions that the limiting current is 0.1 mA and the voltage test range is-2.0-2.0 V; the preparation method of the self-rectification biological memristor comprises the following steps: spin-coating one side surface of the PEDOT: PSS film with an SP (at) Ag < + > solution, then performing ethanol soaking and drying to form an SP (at) Ag < + > film, and finally depositing the Ag electrode layer on the SP (at) Ag < + > film to prepare the self-rectification biological memristor. The preparation method is simple and easy to implement; the manufactured self-rectification biological memristor can restrain the leakage current problem of the biological memristor in high-density integration and achieve a high rectification ratio.

The invention discloses a multifunctional guanidine salt doped perovskite solar cell and a preparation method thereof. The cell comprises an ITO (indium tin oxide) conductive glass substrate layer, a hole transport layer (MeO-4PACz), a perovskite layer Cs0.05 (FA0.95 MA0.05) 0.95 Pb (I0.95 Br0.05) 3 doped with biguanide hydrochloride (BH), a [6, 6]-phenyl-C61-butyric acid isomethyl ester electron transport layer (PCBM), a 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthrene hole blocking layer (BCP) and a metal Ag electrode layer from bottom to top. During preparation, by means of the strong chemical action of nitrogen atoms in BH and Pb < 2 + > ions, the crystallization direction of perovskite is changed, the defect state density is reduced, non-radiative recombination is inhibited, and the carrier separation and transmission efficiency is improved. According to the invention, BH is introduced into the perovskite active layer, so that the application of guanidine derivatives in perovskite photovoltaic materials is expanded, and a new way is provided for preparing stable and efficient perovskite solar cells.

The invention discloses a high-performance photoconductive solar-blind ultraviolet detector based on an MgZnO / InGaO heterojunction photosensitive layer and a preparation method thereof, and belongs to the technical field of ultraviolet photoelectric detection. The device is composed of a SiO2 / FTO substrate, a MgZnO nano-film growing on the surface of FTO, an InGaO nano-film growing on the surface of the MgZnO nano-film, and Ag electrodes prepared on the surface of the InGaO nano-film and the surface of FTO from bottom to top, wherein the MgZnO nano-film and the InGaO nano-film form a heterojunction photosensitive layer. According to the photoconductive solar-blind ultraviolet detector prepared by the invention, when the photoconductive solar-blind ultraviolet detector is under an illumination condition, the composite film synergistically participates in photon absorption, and meanwhile, the photoconductive device has a high gain characteristic, so that the device has outstanding photocurrent and reaches a photoresponsivity peak value at a solar blind area (260nm); and a new thought is provided for the preparation of the high-performance solar blind ultraviolet detector.

The invention relates to the technical field of solar cells, and discloses a method for improving the laser-assisted sintering reliability of a solar cell and the solar cell. The method comprises the following steps of: performing forward bias process treatment on the solar cell subjected to metallization process treatment to force other cations (such as H < + >) around a metal positive electrode such as Ag < + > to be far away from the metal positive electrode and the surface of the cell so as to prevent other cations such as H < + > from snatching e <->; by matching with LECO process treatment, Ag < + > obtains more e <-> and is reduced and converted into an Ag electrode, so that the process effect advantage of LECO can be better played, and the reliability of the LECO process is improved; and the bonding property of H < + > and e <-> can be greatly reduced, the conversion processes of e <-+ > H < + >-> H and H < + > H-> H2 are effectively avoided, and further the problems that the passivation anti-reflection film is broken due to hydrogen overflow and the electrical properties (such as Voc, FF and Eta) of the battery are reduced due to reduction of elementary substance H and the like can be avoided.

The invention discloses an artificial-biological synapse coupled photoelectric memristor for a brain-computer interface and a preparation method and application of the artificial-biological synapse coupled photoelectric memristor, and belongs to the technical field of brain-computer interfaces. The artificial-biological synapse coupled photoelectric memristor for the brain-computer interface comprises an FTO substrate, and a ZnO thin film, a MnO2 thin film and an Ag electrode which are sequentially sputtered and deposited on the FTO substrate, and the FTO substrate and the Ag electrode are respectively used as a lower electrode and an upper electrode. The artificial-biological synapse coupled photoelectric memristor stably responds to light with the wavelength of 365 nm and light with the wavelength of 395 nm. The artificial-biological synapse coupled photoelectric memristor has a good application prospect in the field of electronic devices such as brain-computer interfaces, flexible electronic device integration and implantable electronic equipment. The method and the device are used for solving the technical problems of insufficient function compatibility and signal matching between an artificial synapse and a biological synapse based on a memristor.

The application discloses a beta-Ga2O3 / Yb2O3 heterojunction self-driven detector for solar blind ultraviolet light communication and relates to the technical field of photoelectric detectors. From bottom to top, the beta-Ga2O3 / Yb2O3 heterojunction self-driven detector comprises a sapphire substrate, a beta-Ga2O3 film layer, a Yb2O3 film layer and an Ag electrode in sequence; the beta-Ga2O3 film layer and the Yb2O3 film layer form a beta-Ga2O3 / Yb2O3 heterojunction structure. The band gaps of beta-Ga2O3 and Yb2O3 are 4.9 eV and 5.4 eV, and the corresponding light absorption cutoff wavelengths are 254 nm and 229 nm, respectively, which are located in the solar blind ultraviolet band. The beta-Ga2O3 / Yb2O3 heterojunction has a type-II band arrangement structure, which is beneficial to the separation of photo-generated carriers, the improvement of the light response of the device and the self-driven detection of solar blind ultraviolet light. The self-driven solar blind ultraviolet light communication system constructed based on the beta-Ga2O3 / Yb2O3 heterojunction has a high signal-to-noise ratio and high anti-interference capability and only responds to solar blind light. The heterojunction film constructed by the application is prepared by using the plasma enhanced chemical vapor deposition technology and the sol-gel method, has good process controllability and repeatability, is low in cost and can be prepared in large quantities.

The application discloses a method for preparing a high-efficiency and stable CsPbI3 inorganic perovskite solar cell in an atmospheric environment, and comprises the following steps: using low-temperature SnO2 modified by an alkali metal halide salt as an electron transport layer, dropping a perovskite precursor solution containing a certain amount of benzylamine salt additive on the electron transport layer through a spin coating technology, adopting a two-step annealing method, adjusting the concentration of the additive, and realizing the preparation of a dense and uniform CsPbI3 thin film in a full-air environment, then spin-coating Spiro-OMeTAD as a hole transport layer and vacuum evaporation of an Ag electrode to obtain the preparation of the high-efficiency and stable CsPbI3 inorganic perovskite solar cell. The application realizes the low-energy-consumption preparation of the dense and uniform CsPbI3 inorganic perovskite solar cell under low environmental requirements, and has an excellent photoelectric conversion efficiency of 17.24%.

This invention discloses a Schottky diode based on cubic boron nitride (c-BN) single crystal material. The fabrication method includes the following steps: A cleaned bulk c-BN single crystal is covered with tape, exposing only the area to be plated with electrodes. An Au metal electrode is deposited on one side of the bulk c-BN single crystal, and then the tape is removed. In a glove box, the oxide layer on the surface of a lithium sheet is scraped off, and the sheet is placed on the Ag-plated side of a PCB board. The unplated side of the bulk c-BN single crystal is then tightly attached to the lithium sheet. Fine metal wires are used to connect and fix the Ag electrode on the PCB board to the Au electrode on the bulk c-BN single crystal. After electrochemical doping, an Au metal electrode is deposited on the lithium-doped side of the c-BN crystal. In this invention, lithium atoms are introduced onto the c-BN surface, and their energy levels are located at shallow levels, thereby effectively improving the interfacial contact quality between the metal and c-BN. This improvement further reduces the contact barrier ΦB between the c-BN single crystal and the metal by reducing the interfacial state density.

The present invention belongs to the technical field of optoelectronic devices, and discloses a bias-regulated MoS2 / PbS heterojunction optoelectronic device. Taking FTO glass as the conductive substrate, a MoS2 thin film and a PbS thin film are successively grown on the surface of the FTO glass, and the PbS thin film forms a three-dimensional skeleton coating structure on MoS2. Two Ag electrodes are deposited on the PbS thin film and the FTO glass. The optoelectronic device of the present invention integrally realizes two performances of neuromorphic optoelectronic synapses and broadband optoelectronic detection: the synaptic characteristics of the device come from the modulation of interface defects, realizing advanced synaptic functions such as light-regulated short-term and long-term memory conversion (STM / LTM) and repeated learning and forgetting; while the excellent detection performance of the device comes from the rapid separation of carriers at the heterojunction interface. The preparation process of the optoelectronic device of the present invention is simple, and large-area thin films can be applied to industrial production, expanding the development in the fields of simulating human visual nerve memory and detecting in the ultraviolet to short-wave infrared band.

The invention provides an application method of an ALD-SnO2 electron transport layer in a large-area trans-perovskite assembly, which comprises the following steps of: 1, performing ultrasonic cleaning on a transparent conductive substrate greater than or equal to 10cm * 10cm by using an alkaline detergent, rinsing by using deionized water, dehydrating by using isopropanol, and performing ultraviolet ozone treatment for 20-30 minutes to remove organic residues; 2, tetrabutyltin and deionized water are used as precursors in an ALD reaction cavity, a SnO2 bottom layer is deposited at 140-180 DEG C, tin source pulse is carried out for 0.8-1.2 s, oxygen source pulse is carried out for 0.3-0.6 s, purge is carried out for 8-12 s, and circulation is carried out 60-90 times till the wavelength is 6-9 nm; 3, trimethylaluminum is introduced, aluminum source pulse is linearly and progressively increased for 0.02-0.1 s to achieve 0.5%-2% gradient doping, and a 3-5 nm layer is formed through 40-70 times of circulation; 4, after oxygen plasma treatment is conducted for 6 min to 12 min, a 0.15 mg / mL to 0.25 mg / mL 2-mercaptopyrimidine ethanol solution is spin-coated, and annealing is conducted for 12 min to 18 min at the temperature ranging from 90 DEG C to 110 DEG C; and step 5, preparing a perovskite layer with the assistance of a gas phase, and sequentially depositing a NiOx electrode and an Ag electrode to complete the assembly. The method solves the problems that the existing ALD-SnO2 is limited in application precursor selection, single in doping strategy and poor in large-area adaptability.

This invention discloses a method for fabricating a base metallized electrode thermistor and the thermistor itself, relating to the field of thermistor technology. The thermistor comprises, from the inside out, a thermistor core, a copper-based composite electrode layer, leads, a cover, and an outer encapsulating resin. The invention utilizes a copper-based composite electrode layer with a high proportion of copper, supplemented with silver and nickel. Silver significantly improves conductivity and solderability, while nickel enhances oxidation resistance through solid solution strengthening, making it more similar to the ceramic material of the thermistor core. This alleviates stress accumulation during temperature cycling. Combined with the triple conductive path of leads, cover, and electrode layer, this not only increases the solder contact area and improves soldering reliability but also ensures a stable electrical connection. Through this synergistic effect, the solution significantly improves the long-term reliability of the thermistor under repeated thermal cycling while maintaining its performance, and successfully replaces the silver electrode with a copper electrode.

The invention discloses a method for selectively depositing a vitrification insulating layer on the surface of a ZnO varistor. The method comprises the following steps: firstly, depositing a coupling layer and a non-stick layer on the surface of an Ag electrode; uniformly depositing glass powder on the surface of the whole varistor in a spraying manner; after drying, the glass powder on the surface of the outer electrode is removed in a vibration friction mode, and the glass powder on the surface of the ceramic is still firmly adhered; and finally, through high-temperature calcination, the Ag electrode is exposed again by decomposing the organic coupling layer and the non-stick layer, and the glass powder is fused on the ceramic surface to form a compact film. According to the method, the vitrification insulating layer can be uniformly deposited on the ceramic surface and is not deposited on the surface of the Ag electrode, so that the conductivity of the surface of the Ag electrode is ensured. The formed firm and reliable glass insulating layer can inhibit the overplating phenomenon in the electroplating process.

The invention discloses a high-efficiency stable ternary perovskite solar cell and a preparation method thereof, and the solar cell sequentially comprises, from bottom to top, an ITO conductive glass substrate layer, a hole transport layer MeO-4PACz, a ternary perovskite layer formed by mixing a multi-active-site micromolecule TFSP and a perovskite layer Cs0.05 (FA0.95 MA0.05) 0.95 Pb (I0.95 Br0.05) 3, a [6, 6]-phenyl-C61-butyric acid isomethyl ester electron transport layer PCBM, a 2, 2 '-biphenyl-2, 6'-biphenyl-2, 6 '-biphenyl-2, 6'-biphenyl-2, 6 '-biphenyl-2, 6'-biphenyl-2, 6 '-biphenyl-2, 6'-biphenyl-2, 6 '-biphenyl-2, 6'-biphenyl-2, 6 '-biphenyl-2, 6 The thin film solar cell is characterized by comprising a metal electrode layer, a 9, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline hole barrier layer BCP and a metal Ag electrode layer. By introducing multi-active-site small molecules into the perovskite active layer, multi-stage regulation and control are realized, the photoluminescence intensity is improved, the form of the film is improved, the crystallinity is expanded, charge transfer is balanced, the photoelectric conversion efficiency is enhanced, the stability is improved, and the hysteresis effect of a device is effectively inhibited.

The invention relates to the technical field, and provides a double-sided black film structure for a vehicle-mounted laser radar window and a preparation method, and the double-sided black film structure sequentially comprises a transparent substrate which is provided with a visual window area; the black film layer is arranged on the transparent substrate and located around the visual window area; the black film layer is formed by alternately sputtering a high-refractive-index material and a low-refractive-index material; the transparent ITO film is arranged on the black film layer and covers the visual window area; the Ag electrode is arranged on the transparent ITO film and is positioned around the visual window area; the ink is arranged on the Ag electrode by avoiding the visual window area; and the antireflection film is arranged in the visual window area of the Ag electrode. Through the new film system design, double-sided black display and ultrahigh visible light absorption (the average transmittance is lower than 0.1%) are realized, stray light reflection (the average reflectivity is lower than 0.2%) and dazzle light phenomena are effectively inhibited, and the ranging precision of the laser radar is improved.