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Flexible ultraviolet detector based on copper oxide/gallium oxide nanopillar array pn junction and preparation method thereof

A nano-pillar array, ultraviolet detector technology, applied in nanotechnology, semiconductor devices, climate sustainability, etc., can solve the problems of difficult electrode fabrication, poor stability, weak substrate bonding, etc., to enhance conductivity and Light transmittance, stable performance, better photoelectric performance

Active Publication Date: 2020-09-01
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] So far, related experiments (patent number: 201710012296.2) have been reported on solar-blind ultraviolet photodetectors based on flexible gallium oxide nanobelts, but this type of detector is to transfer the synthesized gallium oxide nanobelts to a flexible substrate. It has the disadvantages of weak bonding with the substrate, poor stability and difficulty in making electrodes.

Method used

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  • Flexible ultraviolet detector based on copper oxide/gallium oxide nanopillar array pn junction and preparation method thereof
  • Flexible ultraviolet detector based on copper oxide/gallium oxide nanopillar array pn junction and preparation method thereof
  • Flexible ultraviolet detector based on copper oxide/gallium oxide nanopillar array pn junction and preparation method thereof

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Embodiment 1

[0037] The preparation method of the flexible ultraviolet detector based on the copper oxide / gallium oxide nanocolumn array pn junction comprises the following steps:

[0038] (1) Soak the metal copper sheet substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and dry it with dry nitrogen; put the cleaned metal copper sheet into the Furnace, and annealed at 500 ℃ for 0.5h, so that a layer of dense CuO film is formed on the surface of metal copper, ready for use.

[0039] (2) Take 20mL Ga(NO 3 ) 3 The solution is placed in the inner tank of the reactor, and then the CuO / Cu sheet substrate obtained in step (1) is leaned against the inner tank of the reactor, and immersed in the gallium nitrate solution.

[0040] (3) Transfer the reactor to an oven, react at 150°C for 5 hours, then take out the sample, wash it alternately with deionized water and absolute ethanol for 3 times, and anneal in a muffle furnace af...

Embodiment 2

[0058] Steps (1), (4) and (5) are all the same as in Example 1. In step (2) Ga(NO 3 ) 3 The solution density is 15g / L, react at 150°C for 6h in step (3), hydrothermally grow gallium oxyhydroxide, then transfer GaOOH to a muffle furnace for annealing, and grow β-Ga 2 o 3 The nano-column array, wherein the annealing temperature of GaOOH is 750° C., and the annealing time is 2 hours. The resulting β-Ga 2 o 3 The crystal structure and chemical composition of the heterojunction nanoarray and the photoelectric characteristics of the flexible ultraviolet detector based on the pn junction of the copper oxide / gallium oxide nanocolumn array are similar to Example 1, and the flexible ultraviolet detector based on the pn junction of the copper oxide / gallium oxide nanocolumn array The difference between the structure of the ultraviolet detector and Embodiment 1 is that, in the embodiment of the present invention, the β-Ga 2 o 3 The diameter of the nanocolumn is 100-150nm, and the ot...

Embodiment 3

[0060] Steps (1), (4) and (5) are all the same as in Example 1. In step (2) Ga(NO 3 ) 3 The solution density is 12g / L, react at 150°C for 8h in step (3), hydrothermally grow gallium oxyhydroxide, then transfer GaOOH to a muffle furnace for annealing, and grow β-Ga 2 o 3 The nano-column array, wherein the annealing temperature of GaOOH is 800° C., and the annealing time is 1 hour. The resulting β-Ga 2 o 3 The crystal structure and chemical composition of the heterojunction nanoarray and the photoelectric characteristics of the flexible ultraviolet detector based on the pn junction of the copper oxide / gallium oxide nanocolumn array are similar to Example 1, and the flexible ultraviolet detector based on the pn junction of the copper oxide / gallium oxide nanocolumn array The difference between the structure of the ultraviolet detector and Embodiment 1 is that, in the embodiment of the present invention, the β-Ga 2 o 3 The diameter of the nanocolumn is 50-100nm, and the othe...

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Abstract

The invention relates to a flexible ultraviolet detector based on a copper oxide / gallium oxide nanopillar array pn junction and a preparation method. The detector comprise the orderly arranged parts of a flexible copper sheet substrate, wherein at least one side of the flexible copper sheet substrate is provided with a copper oxide layer, and a beta-Ga2O3 nanorod array is arranged on the copper oxide layer positioned at one side of the copper sheet substrate; a graphene / Ag nanowire composite layer which is positioned on the beta-Ga2O3 nano column array; an Ag electrode which is located on thegraphene / Ag nanowire composite layer, wherein a copper oxide / gallium oxide nanopillar array pn junction is formed between the copper oxide and the beta-Ga2O3 nanopillar array, and the flexible coppersheet substrate serves as a copper electrode to form an access with the Ag electrode. The ultraviolet detector provided by the invention has a three-dimensional space heterojunction interface structure and a solar blind characteristic, has the excellent chemical and thermal stability, is flexible and bendable, is high in pressure resistance, low in working temperature and power consumption and good in repeatability, and can directionally identify the ultraviolet light with the wavelength of 200-280nm in a solar blind waveband.

Description

technical field [0001] The invention belongs to the technical field of ultraviolet photodetectors, and in particular relates to a flexible ultraviolet detector based on a copper oxide / gallium oxide nanocolumn array pn junction and a preparation method. [0002] technical background [0003] β-Ga 2 o 3 It is a semiconductor material with natural solar blind characteristics, which can detect 200-280 nm ultraviolet light in a directional manner. Since it is not affected by the background radiation of sunlight, the solar blind ultraviolet detection sensitivity is extremely high, so gallium oxide is often used to make solar blind type deep ultraviolet optoelectronic devices. However, common gallium oxide-based ultraviolet photodetection devices grow thin films on rigid substrates (such as quartz, sapphire, silicon wafers, etc.) or flexible substrates (polymer compounds). Rigid substrates cannot be bent, and flexible substrates It is not resistant to high temperature, and has di...

Claims

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Application Information

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IPC IPC(8): H01L31/109H01L31/0236H01L31/032H01L31/0352H01L31/18B82Y40/00
CPCH01L31/02363H01L31/035281H01L31/0321H01L31/109H01L31/18B82Y40/00Y02E10/50Y02P70/50
Inventor 常裕鑫王顺利陶江伟张丽滢郭道友
Owner ZHEJIANG SCI-TECH UNIV
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