1330 results about "Gallium oxide" patented technology

The present invention relates to a gallium oxide power diode with a high breakdown voltage and a preparation method thereof. The preparation method includes: selecting a substrate layer, preparing a drift layer on the upper surface of the substrate layer; preparing a cathode on the lower surface of the substrate layer; preparing an anode on the upper surface of the drift layer; performing a low-temperature annealing process on the device to obtain the gallium oxide power diode; wherein, both the substrate layer and the drift layer are Si- or Sn-doped β-Ga2O3 materials, and the doping concentration of the drift layer is lower than that of the substrate layer, the anode is a Ni / Au metal stack, and a NiO layer with P-type characteristics is formed at the interface between the metal Ni and the drift layer, and the NiO layer and the drift layer form a heterojunction PN junction structure. The preparation method of the present invention can form a heterojunction PN junction structure with a P-type characteristic thin layer NiO layer through low-temperature annealing, can modulate the electric field distribution, improve the interface characteristics between the anode metal and gallium oxide, reduce the reverse leakage current, and increase the breakdown voltage of the device.

The invention provides a gallium oxide epitaxial wafer preparation method, an epitaxial growth system and a gallium oxide epitaxial wafer. The method comprises the following steps: placing a (100)-surface gallium oxide substrate in a reaction chamber, introducing a carrier gas with a first preset flow, setting the pressure in the reaction chamber to be a first preset pressure, and raising the temperature to a first preset temperature; a second preset flow of hydrogen is introduced, and the (100) surface gallium oxide substrate is pretreated; setting the pressure in the reaction chamber as a second preset pressure, raising the temperature of the source region to a second preset temperature, and raising the temperature of the growth region to a third preset temperature; and introducing hydrogen chloride with a third preset flow rate, oxygen with a fourth preset flow rate and hydrogen with a fifth preset flow rate into the reaction chamber, and carrying out vapor phase epitaxy so as to prepare the (100)-surface gallium oxide epitaxial film on the surface of the (100)-surface gallium oxide substrate. The method can promote step flow growth, reduce polycrystal particle aggregation, reduce three-dimensional island-shaped growth, and improve the surface continuity and quality of an epitaxial film.

The invention relates to the technical field of crystal growth, in particular to a mold for growing a gallium oxide single crystal by an edge-defined film-fed growth method and a gallium oxide single crystal growth method. The mold is formed by connecting two partition plates through a fixing part, and a slit is reserved between the partition plates. Steps are arranged on the two radial sides of the top end of the mold, the bottom end of the mold is of an inverted trapezoidal structure, the two waists of a trapezoid are arc-shaped, and the bottom end of the mold is of an inverted trapezoidal structure, so that the temperature difference and temperature gradient of the surface of the mold are reduced, temperature distribution on the two sides of the mold is more symmetrical, and a more reasonable thermal field can be provided for size expansion of gallium oxide crystals.

The invention provides a vertical structure ultraviolet photoelectric detector and a preparation method thereof. The ultraviolet photoelectric detector is of a vertical structure, the design facilitates light absorption of the ultraviolet photoelectric detector, the light utilization rate of the ultraviolet photoelectric detector is improved, and compared with a horizontal structure, the transmission distance is shortened, and the cost is low; the ultraviolet photoelectric detector provided by the invention has a relatively high switching ratio of light and dark current and relatively small dark current, and also has a very high response speed under the condition of keeping the switching ratio of light and dark current and the dark current; a PN junction is formed between the nickel oxide hole transport layer and the beta-phase gallium oxide single crystal, so that the ultraviolet photoelectric detector has self-driving performance; in the manufacturing process, the substrate is used as a supporting frame, and the extraction electrode is packaged in one step through the conductive adhesive tape, so that 3-5 photoetching steps of a traditional horizontal structure are omitted, the process is simplified, and the process manufacturing is simpler.

The invention discloses a method for synthesizing GaOOH and beta-Ga2O3 materials with relatively good crystal quality and relatively uniform phase by taking gallium nitrate as a gallium source through a hydrothermal method and high-temperature calcination treatment, and characterizing the GaOOH and beta-Ga2O3 materials. The hydrothermal method adopted by the method has the advantages of simplicity in operation, low cost and the like, and has great advantages in the aspect of synthesizing gallium oxide. And compared with the traditional methods such as CVD (Chemical Vapor Deposition) and the like, which need to introduce noble metal elements as catalysts, easily cause reduction of material crystal quality and introduce unnecessary impurity elements, the method disclosed by the invention can be used for synthesizing the gallium oxide material with relatively good crystal quality and relatively uniform phase by combining a hydrothermal method and high-temperature calcination treatment. GaOOH powder is synthesized by adding an anionic surfactant sodium dodecyl benzene sulfonate (SDBS) solution with different concentrations, and then the GaOOH powder is calcined at the high temperature of 900 DEG C to obtain beta-Ga2O3 materials with different sizes.

The invention belongs to the technical field of oxide target materials, and particularly discloses an indium gallium titanium oxide target material and a preparation method and application thereof. The indium gallium titanium oxide target material is prepared from the following raw materials in parts by mass: 95 to 99 parts of indium oxide, 0.5 to 2 parts of gallium oxide and 0.6 to 3 parts of titanium dioxide. According to the preparation method, gallium oxide and titanium dioxide in a proper proportion are doped in the indium oxide-based target material, so that an oxide film prepared from the target material has excellent light transmittance on the premise of keeping relatively low resistivity of the target material, and the oxide film prepared from the target material has relatively good mechanical flexibility, and can be applied to the field of organic light-emitting devices, such as organic light-emitting devices, organic light-emitting devices, organic light-emitting devices, organic light-emitting devices, organic light-emitting devices and organic light-emitting devices. And the method can be better applied to flexible OLEDs. The invention also provides a preparation method of the indium gallium titanium oxide target material.

The invention provides an edge-defined film-fed growth gallium oxide crystal interface deformation degree determination method and optimization method.The method comprises the steps that a target crystal interface is determined from a target computational domain, steady-state calculation is conducted on the target computational domain, and a temperature field where the target crystal interface is located is obtained; determining a target function corresponding to the target crystallization interface according to the temperature field; calculating a directional derivative of the target function in the coordinate axis direction of the three-dimensional rectangular coordinate system; determining a temperature change factor of the target grid surface according to the three-dimensional coordinate and the directional derivative of the target grid surface in the three-dimensional rectangular coordinate system; and determining the deformation degree of the target crystal interface according to the temperature change factor of each target grid surface. According to the embodiment of the invention, the deformation degree of the target crystal interface is determined by taking the temperature change factor of each target grid surface as a judgment basis, the subjective judgment of observers is not depended on, and the accuracy and the automation degree of determining the deformation degree of the crystal interface are improved.

The invention discloses a homogeneous pn junction terminal gallium oxide Schottky barrier diode and a preparation method thereof. The problems that gallium oxide p-type doping is difficult, and heterojunction electric leakage is high and voltage resistance is low are solved. The semiconductor device comprises a cathode, an n-Ga2O3 substrate and an n-Ga2O3 epitaxial layer from bottom to top, ion implantation regions are arranged at the left end and the right end of the upper surface of the n-Ga2O3 epitaxial layer, and the upper surface of the n-Ga2O3 epitaxial layer is covered with an anode; the ion implantation region is subjected to annealing treatment to form a p-type Ga2O3 region, and the p-type Ga2O3 region and the n-Ga2O3 epitaxial layer form a homogeneous pn junction terminal, so that the gallium oxide Schottky barrier diode with high voltage resistance and low electric leakage is realized. The preparation method comprises the steps of cleaning an epitaxial wafer, photoetching to form a region to be implanted with ions, carrying out ion implantation, cleaning, carrying out rapid thermal annealing to form p-Ga2O3, and preparing a cathode and an anode. According to the invention, N / P ions are injected, annealing treatment is carried out, a gallium-oxygen-nitrogen-phosphorus compound with a p-type characteristic is generated in the n-Ga2O3 epitaxial layer, and the homogeneous pn junction terminal gallium oxide Schottky barrier diode is realized. The method can be used in high-voltage and high-power fields such as power grids and high-speed rails

The invention discloses a gallium oxide-based MOSFET device and a preparation method thereof, and relates to the field of semiconductor devices. The device has the characteristics of high voltage resistance and low electric leakage, and comprises a conductive region and an edge terminal region connected with the conductive region, the conductive region comprises a first drain metal layer, a first gallium oxide substrate, a first gallium oxide epitaxial layer, a gallium oxide current barrier layer and a highly-doped gallium oxide N + region which are sequentially stacked from bottom to top, and a groove which is positioned on the surface of the highly-doped gallium oxide N + region and of which the bottom is propped against the first gallium oxide epitaxial layer; the conductive region further comprises a first p-type semiconductor buried layer located at the bottom and on the side wall of the groove, a gate dielectric layer located on the surface of the first p-type semiconductor buried layer, the side wall of the groove and the surface of the highly-doped gallium oxide N + region, and a gate metal layer located on the surface of the gate dielectric layer. The first interlayer dielectric layer covers the surface and the side face of the gate metal layer and the side face of the gate dielectric layer, and the source metal layer is located on the surface of the first interlayer dielectric layer and the surface of the highly-doped gallium oxide N + region.

The invention discloses a coal tar hydrogenation catalyst as well as a preparation method and application thereof. The catalyst comprises a carrier and an active metal component, wherein the carrier is a gallium modified silicon-aluminum carrier; in the gallium modified silicon-aluminum carrier, based on the mass of the gallium modified silicon-aluminum carrier, the mass content of gallium oxide is 2.0%-5.0%, the mass content of silicon dioxide is 20.0%-60.0%, and the mass content of aluminum oxide is 35.0%-78.0%; the active metal component comprises Mo and a group VIII metal element; the Mo comprises + 5 valence Mo; the group VIII metal element exists in the catalyst in the form of metal phosphide. The catalyst has high hydrogenation activity, appropriate cracking activity and good stability, and effectively improves the quality and yield of coal tar hydrogenation product oil.

The present invention relates to the technical field of gallium oxide crystal growth, and in particular to a thermal field structure and a device and method for preparing gallium oxide single crystals based on a guided mold method. The present invention changes the inner cavity at the bottom of the thermal field structure from a circular cavity to an elliptical cavity, so that the thermal field structure in the width direction of the mold extends toward the mold side, thereby improving the thermal insulation of the thermal field structure on both sides of the mold, and then prompting the mold core to move closer to the edges on both sides of the mold, ensuring the constant temperature gradient on the mold surface during the shouldering process of the crystal, avoiding temperature differences, and improving production efficiency. In addition, since the extended thermal field structure will make the air inlet airflow closer to the mold surface, resulting in the problem of cold airflow directly blowing the crystallization area on the mold surface, a drainage port is added below the air inlet to guide the cold airflow to the crucible position, thereby ensuring the effect of the mold core moving closer to the edges on both sides of the mold.

The invention relates to a gallium oxide epitaxial layer prediction method and device, equipment and a medium, and the method comprises the steps: collecting the technological parameters of MOCVD and the characterization data of an epitaxial layer, and carrying out the data preprocessing, and obtaining the preprocessed data; performing feature derivation and feature screening on the preprocessed data, and performing data set division on the data after feature screening to generate a training data set and a test data set; constructing an XGBoost regression model, and performing hyper-parameter search to obtain a target optimal parameter combination so as to train the XGBoost regression model and generate a trained XGBoost regression model; testing the trained XGBoost regression model through the test data set to generate a target XGBoost regression model; to-be-measured process parameters of MOCVD are obtained, and epitaxial layer prediction is carried out on the to-be-measured process parameters to obtain the target epitaxial layer thickness and the target full width at half maximum variation. The prediction accuracy of the gallium oxide epitaxial layer is improved.

The invention relates to the technical field of electronics, in particular to a dynamic threat spectrum library construction method based on a gallium oxide solar blind antenna detection module. According to the method, through cooperative acquisition and analysis of a gallium oxide solar blind antenna detection module and a radio frequency signal, a low-altitude target is accurately positioned by utilizing the low-noise characteristic of solar blind ultraviolet detection, the signal response speed is effectively improved, the target positioning capability and speed in a complex environment are improved, and the target positioning accuracy is improved through protocol feature extraction and dynamic fingerprint construction. Identity recognition and behavior tracking of a threat source are achieved, a closed-loop optimization mechanism is formed, the system has the continuous self-adaptive active detection capability, and the protection level of an existing low-altitude defense system from passive defense to active early warning is effectively upgraded.

The invention relates to the technical field of semiconductors, in particular to a gallium oxide heteroepitaxial substrate and a preparation method thereof. The gallium oxide heteroepitaxial substrate comprises: a sapphire substrate; the sapphire substrate is provided with a beveled surface; a periodic pattern structure is arranged on the beveled surface of the sapphire substrate; the depth of a repetitive unit of the periodic pattern structure is 200 nm to 20 [mu] m, the maximum envelope size is 100 nm to 50 [mu] m, and the period interval is 200 nm to 100 [mu] m. The sapphire substrate is subjected to beveling processing and patterning processing, lattice mismatch is remarkably relieved, stress is released, accordingly, dislocation density is reduced, defects in the gallium oxide thin film are reduced, the gallium oxide single crystal thin film with better crystal quality is obtained, and the method has important application value in the field of gallium oxide thin film semiconductor material preparation.

The invention relates to the technical field of semiconductor photoelectric detectors, in particular to an alpha-phase gallium oxide thin film, an ultraviolet detector and a preparation method. The preparation method comprises the following steps: selecting a c-plane sapphire substrate, and placing the substrate in an MOCVD reaction chamber; the reaction chamber is alternately inflated and vacuumized, and the substrate tray is heated to 650-730 DEG C; introducing an oxygen source into the MOCVD reaction chamber, and supplying a reaction source to form alpha-Ga2O3 on the surface of the substrate; adjusting the flow of the carrier gas to 1000-2000 sccm, and continuously supplying an oxygen source and a reaction source to the MOCVD reaction chamber to realize epitaxial growth of the single crystal alpha-Ga2O3 film; and cooling to room temperature and taking out to finish the preparation of the alpha-phase gallium oxide film on the c-plane sapphire substrate. The method has the advantages that the alpha-phase gallium oxide film has high crystallinity and low surface roughness; the ultraviolet detector has the advantages of high responsivity and high response speed, and shows excellent ultraviolet detection performance.

The invention discloses a gallium oxide Schottky diode with a passivated two-dimensional semimetal insertion layer and a preparation method thereof, and the gallium oxide Schottky diode comprises a substrate which is made of N-type heavily doped beta-Ga2O3 with different crystal orientations; the epitaxial layer is located on the substrate; wherein the material of the epitaxial layer is N-type unintentionally doped beta-Ga2O3; the two-dimensional semimetal growth insertion layer is located on the epitaxial layer; the protection layer is located on the two-dimensional semimetal growth insertion layer, and the orthographic projection of the protection layer and the orthographic projection of the two-dimensional semimetal growth insertion layer are overlapped in the direction perpendicular to the substrate; the terminal structure is located on the epitaxial layer, the terminal structure is of an annular structure, and the terminal structure is arranged around the two-dimensional semimetal growth insertion layer and the protection layer; the anode covers the protective layer and a part of the terminal structure; and the cathode is positioned on one side, deviating from the epitaxial layer, of the substrate. According to the beta-Ga2O3-based SBD device provided by the invention, the two-dimensional material can adjust the energy band of the Ga2O3 surface by virtue of the inherent Van der Waals surface, and endow the Schottky barrier with extremely strong flexibility.

The invention belongs to the technical field of electro-catalysis, and particularly relates to an iridium cluster-loaded gallium oxide material as well as a preparation method and application thereof. The gallium oxide material loaded with the iridium cluster comprises flaky gallium oxide and the iridium cluster loaded on the surface of the gallium oxide, wherein the mass percentage content of iridium in the gallium oxide material loaded with the iridium cluster is less than or equal to 50%. The mass percentage of noble metal Ir in the material is less than or equal to 50%, so that the cost can be reduced; in the electrocatalytic oxygen evolution reaction, after voltage is applied, the gallium oxide material (Ir (at) Ga2O3) loaded with the iridium cluster can generate an in-situ reconstructed Ga-O-Ir interface through bias-induced Ga leaching, the Ga-O-Ir interface remarkably reduces the energy barrier of the oxygen evolution reaction, the reaction activity is greatly improved, and the electrochemical performance (overpotential and cycling stability) is remarkably improved.

The invention provides a gallium oxide ultraviolet detector based on a difunctional self-assembly passivation layer and a preparation method thereof, the gallium oxide ultraviolet detector comprises a substrate layer, an oxidant layer and the difunctional self-assembly passivation layer which are arranged from bottom to top, and two sides of the difunctional self-assembly passivation layer are provided with metal electrodes in contact with a gallium oxide layer. Wherein the bifunctional self-assembly passivation layer comprises a first passivation layer and a second passivation layer which are arranged from bottom to top, the passivation material of the first passivation layer is a material for reducing surface defects of the gallium oxide layer, and the passivation material of the second passivation layer is a material for enhancing the ultraviolet photon absorption rate. Passivation materials with different functions are combined to form the dual-function self-assembly passivation layer, and the dual-function self-assembly passivation layer is adopted to perform passivation treatment on the gallium oxide ultraviolet detector, so that the performance of the gallium oxide ultraviolet detector is jointly improved from two aspects of reducing surface defects of gallium oxide and enhancing ultraviolet photon absorption.

The invention provides a rare earth doped gallium oxide thin film material and a preparation method and application thereof. The preparation method comprises the following steps: in a vacuum chamber, depositing a thin film on the surface of a cleaned substrate by using a rare earth oxide doped gallium oxide target material through a single-target radio frequency sputtering method to obtain the rare earth doped gallium oxide thin film material. Rare earth elements are doped in gallium oxide through a single-target radio frequency magnetron sputtering method, physical properties such as forbidden bandwidth of the gallium oxide material are regulated and controlled, application of the gallium oxide material in the field of photoelectric detection or semiconductor light-emitting devices is widened, and the obtained rare earth doped gallium oxide thin film material is uniform in surface film formation and high in yield. The average transmittance at the wavelength of 350-800 nm is greater than 90%, and the doping concentration of rare earth elements in the gallium oxide thin film material can be adjusted by directly replacing target materials with different doping proportions; the preparation method disclosed by the invention is simple, does not need expensive equipment, has obvious cost advantage and is suitable for large-scale production.

The invention discloses a crystal growth device and a crystal growth method for gallium oxide crystal downward growth, and belongs to the technical field of gallium oxide single crystal preparation. The device comprises a crucible, an upper shaft, a heating mechanism and a heat preservation mechanism, the crucible is composed of a metal layer and an isolation layer arranged on the inner side wall of the metal layer, an opening is formed in the top of the metal layer, the thermal expansion coefficient of the side, away from the metal layer, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >, and the thermal expansion coefficient of the isolation layer is gradually increased outwards from the side, away from the metal layer, of the isolation layer. The rising rate is 2 * 10 <-6 >-3 * 10 <-6 > k <-1 > / mm; the upper shaft is arranged above an opening of the crucible and can lift and rotate relative to the crucible, a seed crystal support is arranged below the upper shaft, a first cooling pipeline is arranged in the upper shaft, and a second cooling pipeline is arranged in the seed crystal support. The crystal growth device breaks through the limitation of a traditional Czochralski method, a casting method and a Bridgman method, realizes downward growth of crystals, and can reduce the influence of crucible metal impurities on the crystals, so that gallium oxide single crystals with high quality, large size and high yield are obtained.

The invention relates to the technical field of semiconductor material growth, and aims to solve the technical problems that the service life of a heating element is shortened due to single atmosphere sharing, the quality is difficult to guarantee due to many crystal defects, the single crystal production cost is high, and the production efficiency is low in the prior art. The invention discloses a single crystal growth device which is characterized by comprising a furnace body, a first chamber, a second chamber, a heating assembly, a growth assembly, an atmosphere isolation and heat conduction assembly, an atmosphere management system and a central control system, the atmosphere isolation and heat conduction assembly is used for separating the furnace body into a first cavity and a second cavity which are isolated in an airtight mode, and efficient heat transfer is achieved. By the adoption of the scheme, atmosphere structure separation and combined crucible design can be achieved, high quality and high purity of crystals are guaranteed, meanwhile, the service life of a heating element is effectively prolonged, and the operation cost is remarkably reduced.

The invention discloses a zinc-based oxide target material as well as a preparation method and application thereof. The zinc-based oxide target material comprises the following raw materials: indium oxide, gallium oxide, tin oxide and zinc oxide quantum dots. The indium oxide quantum dots, the gallium oxide quantum dots, the tin oxide quantum dots and the zinc oxide quantum dots serve as preparation raw materials of the target material, the sintering temperature can be effectively reduced, the density of the target material is improved, and the volatilization rate is reduced. A thin film prepared from the zinc-based oxide target material has higher stability and high mobility.

The invention discloses a preparation method of a gallium and zirconium co-doped zinc oxide target material, and relates to the technical field of target materials, the preparation method comprises the following steps: S1, uniformly mixing zirconium oxide, gallium oxide, water and a dispersing agent, and grinding to obtain slurry I; s2, uniformly mixing zinc oxide, water and a dispersing agent, adding the slurry I, uniformly mixing, adding a binder and a plasticizer, uniformly mixing, and grinding to obtain slurry II; s3, performing spray drying and granulation on the slurry II, and sieving to obtain granular powder; s4, the granular powder is subjected to hydraulic pressure and cold isostatic pressing forming, and a plain blank is obtained; and S5, sintering the blank, and cooling to obtain the gallium-zirconium co-doped zinc oxide target material. The gallium and zirconium co-doped zinc oxide target material prepared by the preparation method disclosed by the invention has relatively high relative density and relatively low resistivity; after magnetron sputtering, the obtained film has good electrical properties.

The invention relates to the technical field of semiconductor photoelectric detectors, in particular to a gallium oxide-based laminated structure ultraviolet detector and a preparation method thereof. The detector comprises a gallium nitride single crystal substrate, a GaON thin film layer and a beta-Ga2O3 thin film layer which are tightly stacked from bottom to top, and an electron transport layer and a hole blocking layer which are symmetrically arranged on the surface of one side, away from the gallium nitride single crystal substrate, of the beta-Ga2O3 thin film layer, and metal electrodes are arranged on the electron transport layer and the hole blocking layer. The material of the electron transport layer is ZnO, and the material of the hole blocking layer is TiO2. The device has the advantages that the device structure is stable, the response time can reach microsecond magnitude, and the descending time is short; the adverse effect caused by the inherent continuous photoconductive effect of the gallium oxide material is effectively overcome, the internal defects are obviously reduced, and the ultraviolet photoconductive gain is increased while the inherent continuous photoconductive effect of the gallium oxide is inhibited.

The invention belongs to the technical field of semiconductor material preparation, and provides a gallium oxide thin film growth method which comprises the following steps: providing a reaction chamber and a beveled substrate, and placing the beveled substrate in the reaction chamber; after controlling the temperature and the pressure in the reaction chamber to be a first temperature and a first pressure respectively, introducing a gallium source and an oxygen source into the reaction chamber so as to form a first gallium oxide layer on the beveled substrate; after controlling the temperature and the pressure in the reaction chamber to be a second temperature and a second pressure respectively, introducing a gallium source and an oxygen source into the reaction chamber to form a second gallium oxide layer on the first gallium oxide layer; wherein the first temperature is higher than the second temperature, and the first pressure is lower than the second pressure. In the growth process of the first gallium oxide layer and the second gallium oxide layer, the high-temperature and low-pressure growth environment is beneficial to rapid two-dimensional growth of a gallium oxide material, the low-temperature and high-pressure growth environment is beneficial to stress release of the gallium oxide material, defect extension is hindered, dislocation defects are reduced, and the surface quality of a gallium oxide film is improved.

The invention belongs to the technical field of photoelectric detection, and relates to a gallium oxide nanowire array type solar blind photoelectric detector and a preparation method thereof. Spreading liquid metal gallium on the surface of the substrate to form a liquid metal gallium layer on the surface of the substrate; performing vacuum evaporation on the surface of the liquid metal gallium layer to form a gold film layer to obtain a device precursor; and heating the device precursor to 400-1000 DEG C at a heating rate of 10-15 DEG C / min, and carrying out heat treatment for 1-2h to obtain the sandwich structure device. According to the method, the preparation mode of the array type gallium oxide nanowire is simplified, gallium metal left in the growth process is used as the electrode, the tedious and complex technological process needed in the previous device preparation process is improved, the ordered and regular gallium oxide nanowire array structure is prepared, and the photoelectric detection effect is improved.

The invention provides an integrated gallium nitride and gallium oxide power chip, a preparation method thereof and electronic equipment, and relates to the technical field of semiconductors. According to the epitaxial structure in the integrated gallium nitride and gallium oxide power chip, a GaN layer and a Ga2O3 layer are integrated and epitaxially arranged on the same substrate, heteroepitaxial lattice mismatch is reduced by adopting a method of epitaxially extending the Ga2O3 layer on the GaN layer, and the crystal quality is improved. According to the epitaxial structure, a first functional component is formed on the first area, a second functional component is formed on the second area, the surface of the first area is the surface of the side, deviating from the substrate, of the barrier layer, the surface of the second area is the surface of the side, deviating from the substrate, of the Ga2O3 layer, and the aim that a Ga2O3 power chip and a GaN power chip are integrally arranged on the same substrate is achieved. The processes of lead interconnection, bonding and the like are reduced, the size of a wide bandgap semiconductor power system can be further reduced, and the problems of parasitic loss, response delay, noise and the like caused when discrete chips are integrated are avoided.

The invention belongs to the technical field of semiconductor material surface engineering and defect analysis, and provides an ultrahigh vacuum surface defect detection method and system based on a scanning tunneling microscope, and the method comprises the following steps: carrying out mechanical stripping on a bulk single crystal gallium oxide sample based on the cleavage property of a crystal, and obtaining a gallium oxide single crystal wafer with a micron thickness; placing the stripped single crystal gallium oxide sample in an ultrahigh vacuum environment, and removing atmospheric adsorbates on the surface through vacuum high-temperature annealing treatment; performing sputtering annealing cycle treatment on the surface of the preliminary annealing sample in an ultrahigh vacuum environment to generate an oxygen vacancy defect on the surface so as to obtain a post-treatment sample; the oxygen vacancy concentration, the surface cleanliness and the surface atom orderliness are verified through auxiliary characterization means (XPS, LEED); performing scanning imaging on the surface of the post-treatment sample through a scanning tunneling microscope (STM), and performing oxygen vacancy defect identification by combining with an oxygen vacancy defect STM image simulated by DFT calculation; according to the method, the atomic-scale resolution of the surface of the single crystal gallium oxide sample is detected through the scanning tunneling microscope, the oxygen vacancy defect and other various surface defects are accurately recognized, and the surface state of the sample is comprehensively evaluated.

The invention discloses equipment for growing large-size gallium oxide crystals and a growing method, and relates to the technical field of crystal growing equipment.The equipment comprises a single crystal furnace body, and the single crystal furnace body comprises a seed crystal lifting and rotating mechanism; the heat preservation device can be arranged in the single crystal furnace and comprises a heat preservation container and a heat preservation top plate; the metal crucible can be placed in the heat preservation container; the first driving mechanism is used for driving the metal crucible to rotate; the induction heating coil is sleeved outside the heat preservation container; and the conical surface ring is connected with the output end of the seed crystal lifting and rotating mechanism through a connecting assembly. The growth method comprises the following steps: melting a gallium oxide raw material, descending the conical ring, generating high-quality seed crystals through nucleation control, expanding to a crystal face, lifting the conical ring to perform equal-diameter growth control after the crystal face is in stable contact with the conical ring, and ending after the crystals reach a set size. The twin crystal defect in a traditional guided mode or Czochralski method can be effectively avoided, and crystals with higher quality can be grown.

The invention discloses a p-type gallium oxide material and a preparation method and application thereof, and relates to the technical field of semiconductor materials. The method for preparing the p-type gallium oxide material comprises the following steps: placing a beta-Ga2O3 single crystal substrate in a cavity of a deposition system, introducing an organic gallium source and N2O, and carrying out homoepitaxial growth on the beta-Ga2O3 single crystal substrate through an organic metal chemical vapor deposition method to obtain the p-type nitrogen-doped beta-Ga2O3 material. In the process of homoepitaxial growth on a beta-Ga2O3 single crystal substrate, N atoms in N2O are doped into beta-Ga2O3 in a displacement doping form, so that the p-type nitrogen-doped beta-Ga2O3 material is formed. The preparation of the p-type beta-Ga2O3 material is realized in a homoepitaxy mode, and the p-type beta-Ga2O3 material can be used for preparing a transverse device and a longitudinal device, so that popularization and application of gallium oxide devices are facilitated.