1045 results about "Gallium oxide" patented technology

The present invention relates to a gallium oxide power diode with a high breakdown voltage and a preparation method thereof. The preparation method includes: selecting a substrate layer, preparing a drift layer on the upper surface of the substrate layer; preparing a cathode on the lower surface of the substrate layer; preparing an anode on the upper surface of the drift layer; performing a low-temperature annealing process on the device to obtain the gallium oxide power diode; wherein, both the substrate layer and the drift layer are Si- or Sn-doped β-Ga2O3 materials, and the doping concentration of the drift layer is lower than that of the substrate layer, the anode is a Ni / Au metal stack, and a NiO layer with P-type characteristics is formed at the interface between the metal Ni and the drift layer, and the NiO layer and the drift layer form a heterojunction PN junction structure. The preparation method of the present invention can form a heterojunction PN junction structure with a P-type characteristic thin layer NiO layer through low-temperature annealing, can modulate the electric field distribution, improve the interface characteristics between the anode metal and gallium oxide, reduce the reverse leakage current, and increase the breakdown voltage of the device.

The invention relates to the technical field of crystal growth, in particular to a mold for growing a gallium oxide single crystal by an edge-defined film-fed growth method and a gallium oxide single crystal growth method. The mold is formed by connecting two partition plates through a fixing part, and a slit is reserved between the partition plates. Steps are arranged on the two radial sides of the top end of the mold, the bottom end of the mold is of an inverted trapezoidal structure, the two waists of a trapezoid are arc-shaped, and the bottom end of the mold is of an inverted trapezoidal structure, so that the temperature difference and temperature gradient of the surface of the mold are reduced, temperature distribution on the two sides of the mold is more symmetrical, and a more reasonable thermal field can be provided for size expansion of gallium oxide crystals.

The invention provides a vertical structure ultraviolet photoelectric detector and a preparation method thereof. The ultraviolet photoelectric detector is of a vertical structure, the design facilitates light absorption of the ultraviolet photoelectric detector, the light utilization rate of the ultraviolet photoelectric detector is improved, and compared with a horizontal structure, the transmission distance is shortened, and the cost is low; the ultraviolet photoelectric detector provided by the invention has a relatively high switching ratio of light and dark current and relatively small dark current, and also has a very high response speed under the condition of keeping the switching ratio of light and dark current and the dark current; a PN junction is formed between the nickel oxide hole transport layer and the beta-phase gallium oxide single crystal, so that the ultraviolet photoelectric detector has self-driving performance; in the manufacturing process, the substrate is used as a supporting frame, and the extraction electrode is packaged in one step through the conductive adhesive tape, so that 3-5 photoetching steps of a traditional horizontal structure are omitted, the process is simplified, and the process manufacturing is simpler.

The invention discloses a method for synthesizing GaOOH and beta-Ga2O3 materials with relatively good crystal quality and relatively uniform phase by taking gallium nitrate as a gallium source through a hydrothermal method and high-temperature calcination treatment, and characterizing the GaOOH and beta-Ga2O3 materials. The hydrothermal method adopted by the method has the advantages of simplicity in operation, low cost and the like, and has great advantages in the aspect of synthesizing gallium oxide. And compared with the traditional methods such as CVD (Chemical Vapor Deposition) and the like, which need to introduce noble metal elements as catalysts, easily cause reduction of material crystal quality and introduce unnecessary impurity elements, the method disclosed by the invention can be used for synthesizing the gallium oxide material with relatively good crystal quality and relatively uniform phase by combining a hydrothermal method and high-temperature calcination treatment. GaOOH powder is synthesized by adding an anionic surfactant sodium dodecyl benzene sulfonate (SDBS) solution with different concentrations, and then the GaOOH powder is calcined at the high temperature of 900 DEG C to obtain beta-Ga2O3 materials with different sizes.

The invention discloses a coal tar hydrogenation catalyst as well as a preparation method and application thereof. The catalyst comprises a carrier and an active metal component, wherein the carrier is a gallium modified silicon-aluminum carrier; in the gallium modified silicon-aluminum carrier, based on the mass of the gallium modified silicon-aluminum carrier, the mass content of gallium oxide is 2.0%-5.0%, the mass content of silicon dioxide is 20.0%-60.0%, and the mass content of aluminum oxide is 35.0%-78.0%; the active metal component comprises Mo and a group VIII metal element; the Mo comprises + 5 valence Mo; the group VIII metal element exists in the catalyst in the form of metal phosphide. The catalyst has high hydrogenation activity, appropriate cracking activity and good stability, and effectively improves the quality and yield of coal tar hydrogenation product oil.

The invention relates to a gallium oxide epitaxial layer prediction method and device, equipment and a medium, and the method comprises the steps: collecting the technological parameters of MOCVD and the characterization data of an epitaxial layer, and carrying out the data preprocessing, and obtaining the preprocessed data; performing feature derivation and feature screening on the preprocessed data, and performing data set division on the data after feature screening to generate a training data set and a test data set; constructing an XGBoost regression model, and performing hyper-parameter search to obtain a target optimal parameter combination so as to train the XGBoost regression model and generate a trained XGBoost regression model; testing the trained XGBoost regression model through the test data set to generate a target XGBoost regression model; to-be-measured process parameters of MOCVD are obtained, and epitaxial layer prediction is carried out on the to-be-measured process parameters to obtain the target epitaxial layer thickness and the target full width at half maximum variation. The prediction accuracy of the gallium oxide epitaxial layer is improved.

The invention relates to the technical field of electronics, in particular to a dynamic threat spectrum library construction method based on a gallium oxide solar blind antenna detection module. According to the method, through cooperative acquisition and analysis of a gallium oxide solar blind antenna detection module and a radio frequency signal, a low-altitude target is accurately positioned by utilizing the low-noise characteristic of solar blind ultraviolet detection, the signal response speed is effectively improved, the target positioning capability and speed in a complex environment are improved, and the target positioning accuracy is improved through protocol feature extraction and dynamic fingerprint construction. Identity recognition and behavior tracking of a threat source are achieved, a closed-loop optimization mechanism is formed, the system has the continuous self-adaptive active detection capability, and the protection level of an existing low-altitude defense system from passive defense to active early warning is effectively upgraded.

The invention relates to the technical field of semiconductors, in particular to a gallium oxide heteroepitaxial substrate and a preparation method thereof. The gallium oxide heteroepitaxial substrate comprises: a sapphire substrate; the sapphire substrate is provided with a beveled surface; a periodic pattern structure is arranged on the beveled surface of the sapphire substrate; the depth of a repetitive unit of the periodic pattern structure is 200 nm to 20 [mu] m, the maximum envelope size is 100 nm to 50 [mu] m, and the period interval is 200 nm to 100 [mu] m. The sapphire substrate is subjected to beveling processing and patterning processing, lattice mismatch is remarkably relieved, stress is released, accordingly, dislocation density is reduced, defects in the gallium oxide thin film are reduced, the gallium oxide single crystal thin film with better crystal quality is obtained, and the method has important application value in the field of gallium oxide thin film semiconductor material preparation.

The invention discloses a crystal growth device and a crystal growth method for gallium oxide crystal downward growth, and belongs to the technical field of gallium oxide single crystal preparation. The device comprises a crucible, an upper shaft, a heating mechanism and a heat preservation mechanism, the crucible is composed of a metal layer and an isolation layer arranged on the inner side wall of the metal layer, an opening is formed in the top of the metal layer, the thermal expansion coefficient of the side, away from the metal layer, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >, and the thermal expansion coefficient of the isolation layer is gradually increased outwards from the side, away from the metal layer, of the isolation layer. The rising rate is 2 * 10 <-6 >-3 * 10 <-6 > k <-1 > / mm; the upper shaft is arranged above an opening of the crucible and can lift and rotate relative to the crucible, a seed crystal support is arranged below the upper shaft, a first cooling pipeline is arranged in the upper shaft, and a second cooling pipeline is arranged in the seed crystal support. The crystal growth device breaks through the limitation of a traditional Czochralski method, a casting method and a Bridgman method, realizes downward growth of crystals, and can reduce the influence of crucible metal impurities on the crystals, so that gallium oxide single crystals with high quality, large size and high yield are obtained.

The invention relates to the technical field of semiconductor material growth, and aims to solve the technical problems that the service life of a heating element is shortened due to single atmosphere sharing, the quality is difficult to guarantee due to many crystal defects, the single crystal production cost is high, and the production efficiency is low in the prior art. The invention discloses a single crystal growth device which is characterized by comprising a furnace body, a first chamber, a second chamber, a heating assembly, a growth assembly, an atmosphere isolation and heat conduction assembly, an atmosphere management system and a central control system, the atmosphere isolation and heat conduction assembly is used for separating the furnace body into a first cavity and a second cavity which are isolated in an airtight mode, and efficient heat transfer is achieved. By the adoption of the scheme, atmosphere structure separation and combined crucible design can be achieved, high quality and high purity of crystals are guaranteed, meanwhile, the service life of a heating element is effectively prolonged, and the operation cost is remarkably reduced.

The invention belongs to the technical field of photoelectric detection, and relates to a gallium oxide nanowire array type solar blind photoelectric detector and a preparation method thereof. Spreading liquid metal gallium on the surface of the substrate to form a liquid metal gallium layer on the surface of the substrate; performing vacuum evaporation on the surface of the liquid metal gallium layer to form a gold film layer to obtain a device precursor; and heating the device precursor to 400-1000 DEG C at a heating rate of 10-15 DEG C / min, and carrying out heat treatment for 1-2h to obtain the sandwich structure device. According to the method, the preparation mode of the array type gallium oxide nanowire is simplified, gallium metal left in the growth process is used as the electrode, the tedious and complex technological process needed in the previous device preparation process is improved, the ordered and regular gallium oxide nanowire array structure is prepared, and the photoelectric detection effect is improved.

The invention belongs to the technical field of semiconductor material surface engineering and defect analysis, and provides an ultrahigh vacuum surface defect detection method and system based on a scanning tunneling microscope, and the method comprises the following steps: carrying out mechanical stripping on a bulk single crystal gallium oxide sample based on the cleavage property of a crystal, and obtaining a gallium oxide single crystal wafer with a micron thickness; placing the stripped single crystal gallium oxide sample in an ultrahigh vacuum environment, and removing atmospheric adsorbates on the surface through vacuum high-temperature annealing treatment; performing sputtering annealing cycle treatment on the surface of the preliminary annealing sample in an ultrahigh vacuum environment to generate an oxygen vacancy defect on the surface so as to obtain a post-treatment sample; the oxygen vacancy concentration, the surface cleanliness and the surface atom orderliness are verified through auxiliary characterization means (XPS, LEED); performing scanning imaging on the surface of the post-treatment sample through a scanning tunneling microscope (STM), and performing oxygen vacancy defect identification by combining with an oxygen vacancy defect STM image simulated by DFT calculation; according to the method, the atomic-scale resolution of the surface of the single crystal gallium oxide sample is detected through the scanning tunneling microscope, the oxygen vacancy defect and other various surface defects are accurately recognized, and the surface state of the sample is comprehensively evaluated.

The invention discloses a gallium oxide solar-blind ultraviolet detector based on selective area etching and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric detection. Comprises from bottom to top: a substrate; the first epitaxial layer is located on the substrate, and the first epitaxial layer is a highly doped n-Ga2O3 layer; the second epitaxial layer is located on the first epitaxial layer, and the second epitaxial layer is a lightly doped n-Ga2O3 layer; the third epitaxial layer is located on the second epitaxial layer, the third epitaxial layer is a highly-doped p-NiO layer, and the third epitaxial layer is distributed at intervals through selective area etching; and the first ohmic contact layer is located on the area where the third epitaxial layer is distributed at intervals. The detector adopts a PN junction structure working in a reverse bias state, and compared with a Schottky structure, the detector has the advantages that the built-in electric field intensity and the leakage current level of a device are less affected by high-energy photon irradiation and working environment temperature change, and the anti-irradiation performance of the device and the working capability under an extreme temperature condition are effectively improved.

The invention discloses an extraction method for extracting gallium from waste residues of coal gangue and bauxite, which is characterized in that metal elements such as gallium and aluminum in the waste residues can be uniformly distributed through powdering and proper mixing, ammonium sulfate is added in the roasting process, so that not only is the separation and release of gallium and aluminum realized, but also the generated ammonium sulfate gas is cooled, crystallized and recycled, and the production cost is reduced. According to the method, the process cost is reduced, acid leaching, alkaline leaching and composite extraction are adopted step by step, it is ensured that gallium is efficiently enriched and separated in all procedures, gallium oxide with the purity larger than or equal to 99.5% is finally obtained, meanwhile, residual silicon-rich residues and bauxite residues are subjected to hydrothermal crystallization to prepare molecular sieves, comprehensive utilization of waste residues is achieved, and obvious economic and environment-friendly benefits are achieved.

The invention discloses a Bridgman method growth gallium oxide single crystal abnormity detection method based on multi-mode perception, and relates to the technical field of single crystal preparation, and the method comprises the following steps: S1, collecting optical signals of a melt surface area in a Bridgman method growth gallium oxide single crystal process through a sensor array, synchronously acquiring temperature field data or infrared thermal image data of the region; the method comprises the following steps: acquiring an original spectral data set covering a local area according to a radiation signal under a micron-order spatial resolution, and obtaining initial radiation distribution information; according to the anomaly detection method for growing the gallium oxide single crystal by the Bridgman method based on multi-mode perception, dynamic tracking and accurate positioning of component anomaly in the growth process of the Bridgman method are realized, and an effective technical means is provided for improving the growth quality of the gallium oxide single crystal, reducing crystal defects and improving the process control capability.

A detection method and detection apparatus for atomic-scale defects in gallium oxide crystals. In the detection method, a scattering-type scanning near-field optical microscope system and / or a nano-infrared system are used to detect atomic-scale defects in gallium oxide crystals. Aiming at real requirements for the detection of internal structural defects in Ga2O3 materials and devices, a near-field optical microscope system and a nano-infrared system are used to detect structural defects in Ga2O3 crystals, thereby realizing highly sensitive and nondestructive detection of atomic-scale defects in materials.

The invention discloses a low-resistance N-type gallium oxide crystal and a growth method thereof. The growth method comprises the following steps: pretreatment of raw materials: sintering a doped gallium oxide material block formed by mixing gallium oxide powder and doped raw material powder; crystal growth: heating the iraurita crucible to melt the doped gallium oxide material block, increasing the power of the medium-frequency induction coil to raise the temperature of the gallium oxide melt, keeping the temperature, cooling to the melting point of gallium oxide, keeping the melt state, firstly reducing the power of the medium-frequency induction coil to spontaneously nucleate at the cold core of the upper surface of the melt and realize the transverse growth of the nucleated crystal; reducing the power of the lower medium-frequency induction coil to enable the gallium oxide melt to grow from top to bottom until the gallium oxide melt completely grows into crystals; after crystal growth is finished, the temperature is reduced to 1200-1400 DEG C, heat preservation is conducted, cooling is conducted to the room temperature, and the low-resistance N-type gallium oxide crystals are obtained.The growth method is simple in process, the crystal growth speed is conveniently controlled, the crystal forming rate is increased, and large-scale mass production is achieved.

The invention discloses a gallium oxide semiconductor device test data analysis system, which relates to the field of semiconductors, solves the problem that the existing semiconductor device test data analysis system is poor in analysis effect, and comprises an electrical index module, a data analysis module, a data analysis module and a data analysis module, the photoelectric index module is used for carrying out various photoelectric index tests on the sample semiconductor device in the photoelectric index test period and obtaining a periodic photoelectric index sorting queue according to the test result; and the test analysis module is used for carrying out test data analysis on the sample semiconductor device according to the periodic electrical index sorting queue and the periodic photoelectric index sorting queue, and feeding back an analysis result. According to the invention, the accuracy and comprehensiveness of the test data analysis result can be improved.

The invention discloses a method for preparing a boron nitride-gallium oxide thin film flexible dual-band ultraviolet solar blind detector through Van der Waals stripping, and aims to improve the comprehensive performance of the detector. The method comprises the steps of h-BN substrate pretreatment and surface modification, Sn gradient doped beta-Ga2O3 layer preparation, heterojunction interface passivation treatment, two-step Van der Waals stripping and flexible transfer, ohmic contact electrode preparation, gate type Schottky contact electrode preparation, post-treatment and packaging. According to the core, the interface state density is reduced through Al2O3 passivation, and carrier transport is optimized through Sn gradient doping, so that the detector achieves 200-280 nm dual-band response, the peak response rate is high, the response time is short, the leakage current is low, the flexible bending stability is good, high performance and flexibility are both considered, and industrial application can be achieved.

The invention relates to the technical field of semiconductor materials, in particular to a silicon carbide epitaxial gallium oxide thin film and a preparation method thereof.The preparation method includes the steps that a silicon dioxide mask layer, an aluminum nitride low-temperature buffer layer, an aluminum nitride high-temperature buffer layer and a gallium oxide thin film layer are sequentially grown on a silicon carbide substrate slice through a metal organic chemical vapor deposition method; wherein the silicon dioxide mask layer contains a small amount of aluminum nitride, so that a heat source can be quickly transferred, and the heat conductivity of the gallium oxide thin film can be effectively improved; according to the method, plasma etching is carried out on the silicon dioxide mask layer with silicon carbide as the substrate twice, the flatness of the aluminum nitride buffer layer surface is improved, dislocation and step type defects in the gallium oxide growth process are further effectively inhibited, and the growth quality of the gallium oxide film is improved. Through the heteroepitaxy technology, the production cost of the gallium oxide thin film can be reduced, meanwhile, the gallium oxide thin film has high heat conductivity, and compared with the prior art, the gallium oxide thin film has wide application prospects.

The application belongs to the technical field of semiconductor power devices, and particularly discloses a method for laser stripping gallium oxide. The method is characterized in that a super-short pulse laser with a predetermined wavelength is irradiated into the gallium oxide, and a two-photon absorption process occurs when the laser is focused at a position with a specific thickness from the surface. The high temperature generated in the process causes thermal decomposition of the gallium oxide, thereby achieving the purpose of stripping the gallium oxide. Compared with the traditional substrate cutting technology, the stripping method can significantly reduce the cutting consumption of the gallium oxide substrate, and the cut substrate can be reused after polishing, which helps to reduce the manufacturing cost of the gallium oxide device.

The invention relates to an epitaxial growth method of a gallium oxide material, a gallium oxide epitaxial structure and an ultraviolet detector. The epitaxial growth method of the gallium oxide material comprises the following steps: providing a substrate; forming an aluminum nitride layer on the substrate; epitaxially growing at least one composite interface layer on the aluminum nitride layer, wherein the composite interface layer comprises an aluminum oxide layer and an indium oxide layer which are stacked in sequence; and epitaxially growing a gallium oxide layer on the composite interface layer. Therefore, the dislocation density and thermal stress in the gallium oxide layer can be reduced, and the quality and performance of the gallium oxide epitaxial structure can be improved. When the prepared gallium oxide epitaxial structure is applied to a photoelectric detector, the performance and the reliability of the device can be remarkably improved.

A Schottky barrier diode includes a semiconductor substrate made of gallium oxide, a drift layer made of gallium oxide and formed on the semiconductor substrate, an anode electrode brought into Schottky contact with the drift layer, a cathode electrode brought into ohmic contact with the semiconductor substrate, an insulating film covering the inner wall of a trench formed in the drift layer, and a protective film covering the anode electrode, wherein a part of the protective film is embedded in the trench. The part of the protective film is thus embedded in the trench, so that adhesion performance between the anode electrode and protective film is enhanced. This makes it possible to prevent peeling at the boundary between the anode electrode and the protective film.

The invention provides a high-voltage-resistant gallium oxide trench junction barrier Schottky diode. The high-voltage-resistant gallium oxide trench junction barrier Schottky diode comprises a cathode metal layer, a high-doping N-type gallium oxide substrate, a low-doping N-type gallium oxide epitaxial layer, an etching table top first dielectric layer, an etching table top second dielectric layer, a P-type nickel oxide layer, a dielectric layer and an anode metal layer which are sequentially stacked from bottom to top. According to the invention, P-type nickel oxide and gallium oxide are introduced to construct a heterostructure into a JBS structure, the JBS structure is combined with the etched trench to form a trench junction barrier Schottky diode, and the device has lower specific on-resistance, can bear higher reverse breakdown voltage, and is a gallium oxide JBS device with excellent performance.

The invention discloses a gallium oxide substrate surface grinding morphology prediction method and system, and relates to the technical field of nondestructive testing, and the method comprises the steps: collecting a surface fluorescence distribution image, matching the surface fluorescence distribution image with a pre-constructed fluorescence-crack mapping database, and generating a two-dimensional crack depth distribution cloud picture; marking a risk area coordinate set in the two-dimensional crack depth distribution cloud picture based on a preset crack depth threshold value; inputting the risk area coordinate set into a Bessel beam chromatography scanner for multi-angle transmission type scanning, synchronously collecting scattering images generated by scanning, and fusing the scattering images to generate a subsurface damage three-dimensional model; and performing data registration and weight superposition on the two-dimensional crack depth distribution cloud picture and the subsurface damage three-dimensional model, and outputting a morphology prediction report and grinding process optimization parameters. The subsurface damage three-dimensional model is constructed through the Bessel beam tomography scanning and multi-angle scattering image fusion technology, and high-resolution visual reconstruction of microcracks and damage distribution in the gallium oxide substrate is achieved.

The invention relates to a photoelectric detector and a preparation method and application thereof. The photoelectric detector comprises a substrate, a heat insulation layer and a photosensitive layer which are stacked from bottom to top, and further comprises a first electrode and a second electrode, and the first electrode and the second electrode are connected through the photosensitive layer. According to the photoelectric detector, the two-dimensional transition metal chalcogenide is used as the photosensitive layer, the amorphous gallium oxide is introduced as the heat insulation layer, and the specific heat insulation layer not only can improve the photoelectric property of the photoelectric detector at room temperature, but also can improve the photoelectric property of the photoelectric detector at high temperature (100-250 DEG C).

The invention discloses a gallium oxide-based Schottky barrier diode and a preparation method thereof. The method comprises the following steps: preparing a gallium oxide substrate; performing oxygen plasma treatment in a reactive ion etching system; feeding the sample into a tubular furnace, and annealing in an air atmosphere; then sending the annealed sample into electron beam evaporation equipment for back metal silver electrode growth; next, the sample is sent into rapid thermal annealing equipment to be annealed in the N2 atmosphere, and ohmic contact is formed; then, under the conditions that the growth speed is 0.01-0.1 nm / s and the vacuum degree is lower than 1 * 10 <-4 > Pa, field plate oxide Al2O3 grows on the surface treatment acting layer of the substrate through electron beam evaporation; and finally growing a metal anode at the top of the device by electron beam evaporation equipment. According to the technical scheme provided by the invention, the problem of preparing the gallium oxide-based Schottky barrier diode with low forward conduction loss under the condition of maintaining high breakdown voltage of the device is solved.

The invention relates to a multi-element synergistic doped ATO target material and a preparation method thereof. Comprising the following steps: 1) uniformly mixing water and a powder dispersant, then adding an oxide 1 (at least one of tantalum pentoxide, niobium pentoxide, vanadium pentoxide, gallium oxide and tungsten trioxide), an oxide 2 (at least one of zinc oxide, copper oxide, cobalt oxide, manganese oxide and cerium oxide) and ATO raw material powder, and mixing and homogenizing to prepare slurry; 2) grinding the slurry and adding a powder forming adhesive; 3) carrying out spray drying granulation on the ground slurry; according to the preparation method, the ATO target material with high compactness (relative density gt, 98.5%) and low resistance (resistivity lt, 5 * 10 <-3 > omega.cm) is prepared through multi-element synergistic doping of the oxide, and the problem that compactness and conductivity of the ATO target material are difficult to consider at the same time in the prior art is solved.

The invention provides a gallium oxide ultraviolet synaptic device and a preparation method thereof, and relates to the technical field of microelectronics, and the gallium oxide ultraviolet synaptic device comprises a substrate layer, a gallium oxide light absorption layer and a patterned electrode which are sequentially arranged from bottom to top; the gallium oxide light absorption layer is used for generating photon-generated carriers under excitation of an ultraviolet light signal, and the gallium oxide light absorption layer has a ferroelectric characteristic, so that integration of an ultraviolet photosensitive characteristic and the ferroelectric characteristic is realized. The invention aims to provide a novel gallium oxide ultraviolet synapse device, the device not only has excellent sensitivity to ultraviolet light and can effectively simulate key functions of biological synapses, but also the gallium oxide light absorption layer has ferroelectric characteristics and can realize integration of ultraviolet photosensitive characteristics and ferroelectric characteristics, so that the device has good application prospects. And the method has important significance for further expanding the performance of the nerve synapse.