790 results about "Gallium oxide" patented technology

The invention discloses a coal tar hydrogenation catalyst as well as a preparation method and application thereof. The catalyst comprises a carrier and an active metal component, wherein the carrier is a gallium modified silicon-aluminum carrier; in the gallium modified silicon-aluminum carrier, based on the mass of the gallium modified silicon-aluminum carrier, the mass content of gallium oxide is 2.0%-5.0%, the mass content of silicon dioxide is 20.0%-60.0%, and the mass content of aluminum oxide is 35.0%-78.0%; the active metal component comprises Mo and a group VIII metal element; the Mo comprises + 5 valence Mo; the group VIII metal element exists in the catalyst in the form of metal phosphide. The catalyst has high hydrogenation activity, appropriate cracking activity and good stability, and effectively improves the quality and yield of coal tar hydrogenation product oil.

The invention relates to a gallium oxide epitaxial layer prediction method and device, equipment and a medium, and the method comprises the steps: collecting the technological parameters of MOCVD and the characterization data of an epitaxial layer, and carrying out the data preprocessing, and obtaining the preprocessed data; performing feature derivation and feature screening on the preprocessed data, and performing data set division on the data after feature screening to generate a training data set and a test data set; constructing an XGBoost regression model, and performing hyper-parameter search to obtain a target optimal parameter combination so as to train the XGBoost regression model and generate a trained XGBoost regression model; testing the trained XGBoost regression model through the test data set to generate a target XGBoost regression model; to-be-measured process parameters of MOCVD are obtained, and epitaxial layer prediction is carried out on the to-be-measured process parameters to obtain the target epitaxial layer thickness and the target full width at half maximum variation. The prediction accuracy of the gallium oxide epitaxial layer is improved.

The invention discloses a crystal growth device and a crystal growth method for gallium oxide crystal downward growth, and belongs to the technical field of gallium oxide single crystal preparation. The device comprises a crucible, an upper shaft, a heating mechanism and a heat preservation mechanism, the crucible is composed of a metal layer and an isolation layer arranged on the inner side wall of the metal layer, an opening is formed in the top of the metal layer, the thermal expansion coefficient of the side, away from the metal layer, of the isolation layer ranges from 0.5 * 10 <-6 > k <-1 > to 2.5 * 10 <-6 > k <-1 >, and the thermal expansion coefficient of the isolation layer is gradually increased outwards from the side, away from the metal layer, of the isolation layer. The rising rate is 2 * 10 <-6 >-3 * 10 <-6 > k <-1 > / mm; the upper shaft is arranged above an opening of the crucible and can lift and rotate relative to the crucible, a seed crystal support is arranged below the upper shaft, a first cooling pipeline is arranged in the upper shaft, and a second cooling pipeline is arranged in the seed crystal support. The crystal growth device breaks through the limitation of a traditional Czochralski method, a casting method and a Bridgman method, realizes downward growth of crystals, and can reduce the influence of crucible metal impurities on the crystals, so that gallium oxide single crystals with high quality, large size and high yield are obtained.

The invention relates to the technical field of semiconductor material growth, and aims to solve the technical problems that the service life of a heating element is shortened due to single atmosphere sharing, the quality is difficult to guarantee due to many crystal defects, the single crystal production cost is high, and the production efficiency is low in the prior art. The invention discloses a single crystal growth device which is characterized by comprising a furnace body, a first chamber, a second chamber, a heating assembly, a growth assembly, an atmosphere isolation and heat conduction assembly, an atmosphere management system and a central control system, the atmosphere isolation and heat conduction assembly is used for separating the furnace body into a first cavity and a second cavity which are isolated in an airtight mode, and efficient heat transfer is achieved. By the adoption of the scheme, atmosphere structure separation and combined crucible design can be achieved, high quality and high purity of crystals are guaranteed, meanwhile, the service life of a heating element is effectively prolonged, and the operation cost is remarkably reduced.

The invention belongs to the technical field of photoelectric detection, and relates to a gallium oxide nanowire array type solar blind photoelectric detector and a preparation method thereof. Spreading liquid metal gallium on the surface of the substrate to form a liquid metal gallium layer on the surface of the substrate; performing vacuum evaporation on the surface of the liquid metal gallium layer to form a gold film layer to obtain a device precursor; and heating the device precursor to 400-1000 DEG C at a heating rate of 10-15 DEG C / min, and carrying out heat treatment for 1-2h to obtain the sandwich structure device. According to the method, the preparation mode of the array type gallium oxide nanowire is simplified, gallium metal left in the growth process is used as the electrode, the tedious and complex technological process needed in the previous device preparation process is improved, the ordered and regular gallium oxide nanowire array structure is prepared, and the photoelectric detection effect is improved.

The invention discloses a gallium oxide solar-blind ultraviolet detector based on selective area etching and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric detection. Comprises from bottom to top: a substrate; the first epitaxial layer is located on the substrate, and the first epitaxial layer is a highly doped n-Ga2O3 layer; the second epitaxial layer is located on the first epitaxial layer, and the second epitaxial layer is a lightly doped n-Ga2O3 layer; the third epitaxial layer is located on the second epitaxial layer, the third epitaxial layer is a highly-doped p-NiO layer, and the third epitaxial layer is distributed at intervals through selective area etching; and the first ohmic contact layer is located on the area where the third epitaxial layer is distributed at intervals. The detector adopts a PN junction structure working in a reverse bias state, and compared with a Schottky structure, the detector has the advantages that the built-in electric field intensity and the leakage current level of a device are less affected by high-energy photon irradiation and working environment temperature change, and the anti-irradiation performance of the device and the working capability under an extreme temperature condition are effectively improved.

The invention discloses a Bridgman method growth gallium oxide single crystal abnormity detection method based on multi-mode perception, and relates to the technical field of single crystal preparation, and the method comprises the following steps: S1, collecting optical signals of a melt surface area in a Bridgman method growth gallium oxide single crystal process through a sensor array, synchronously acquiring temperature field data or infrared thermal image data of the region; the method comprises the following steps: acquiring an original spectral data set covering a local area according to a radiation signal under a micron-order spatial resolution, and obtaining initial radiation distribution information; according to the anomaly detection method for growing the gallium oxide single crystal by the Bridgman method based on multi-mode perception, dynamic tracking and accurate positioning of component anomaly in the growth process of the Bridgman method are realized, and an effective technical means is provided for improving the growth quality of the gallium oxide single crystal, reducing crystal defects and improving the process control capability.

The invention discloses a gallium oxide semiconductor device test data analysis system, which relates to the field of semiconductors, solves the problem that the existing semiconductor device test data analysis system is poor in analysis effect, and comprises an electrical index module, a data analysis module, a data analysis module and a data analysis module, the photoelectric index module is used for carrying out various photoelectric index tests on the sample semiconductor device in the photoelectric index test period and obtaining a periodic photoelectric index sorting queue according to the test result; and the test analysis module is used for carrying out test data analysis on the sample semiconductor device according to the periodic electrical index sorting queue and the periodic photoelectric index sorting queue, and feeding back an analysis result. According to the invention, the accuracy and comprehensiveness of the test data analysis result can be improved.

The invention discloses a method for preparing a boron nitride-gallium oxide thin film flexible dual-band ultraviolet solar blind detector through Van der Waals stripping, and aims to improve the comprehensive performance of the detector. The method comprises the steps of h-BN substrate pretreatment and surface modification, Sn gradient doped beta-Ga2O3 layer preparation, heterojunction interface passivation treatment, two-step Van der Waals stripping and flexible transfer, ohmic contact electrode preparation, gate type Schottky contact electrode preparation, post-treatment and packaging. According to the core, the interface state density is reduced through Al2O3 passivation, and carrier transport is optimized through Sn gradient doping, so that the detector achieves 200-280 nm dual-band response, the peak response rate is high, the response time is short, the leakage current is low, the flexible bending stability is good, high performance and flexibility are both considered, and industrial application can be achieved.

The application belongs to the technical field of semiconductor power devices, and particularly discloses a method for laser stripping gallium oxide. The method is characterized in that a super-short pulse laser with a predetermined wavelength is irradiated into the gallium oxide, and a two-photon absorption process occurs when the laser is focused at a position with a specific thickness from the surface. The high temperature generated in the process causes thermal decomposition of the gallium oxide, thereby achieving the purpose of stripping the gallium oxide. Compared with the traditional substrate cutting technology, the stripping method can significantly reduce the cutting consumption of the gallium oxide substrate, and the cut substrate can be reused after polishing, which helps to reduce the manufacturing cost of the gallium oxide device.

The invention provides a high-voltage-resistant gallium oxide trench junction barrier Schottky diode. The high-voltage-resistant gallium oxide trench junction barrier Schottky diode comprises a cathode metal layer, a high-doping N-type gallium oxide substrate, a low-doping N-type gallium oxide epitaxial layer, an etching table top first dielectric layer, an etching table top second dielectric layer, a P-type nickel oxide layer, a dielectric layer and an anode metal layer which are sequentially stacked from bottom to top. According to the invention, P-type nickel oxide and gallium oxide are introduced to construct a heterostructure into a JBS structure, the JBS structure is combined with the etched trench to form a trench junction barrier Schottky diode, and the device has lower specific on-resistance, can bear higher reverse breakdown voltage, and is a gallium oxide JBS device with excellent performance.

The invention discloses a gallium oxide substrate surface grinding morphology prediction method and system, and relates to the technical field of nondestructive testing, and the method comprises the steps: collecting a surface fluorescence distribution image, matching the surface fluorescence distribution image with a pre-constructed fluorescence-crack mapping database, and generating a two-dimensional crack depth distribution cloud picture; marking a risk area coordinate set in the two-dimensional crack depth distribution cloud picture based on a preset crack depth threshold value; inputting the risk area coordinate set into a Bessel beam chromatography scanner for multi-angle transmission type scanning, synchronously collecting scattering images generated by scanning, and fusing the scattering images to generate a subsurface damage three-dimensional model; and performing data registration and weight superposition on the two-dimensional crack depth distribution cloud picture and the subsurface damage three-dimensional model, and outputting a morphology prediction report and grinding process optimization parameters. The subsurface damage three-dimensional model is constructed through the Bessel beam tomography scanning and multi-angle scattering image fusion technology, and high-resolution visual reconstruction of microcracks and damage distribution in the gallium oxide substrate is achieved.

The invention relates to a photoelectric detector and a preparation method and application thereof. The photoelectric detector comprises a substrate, a heat insulation layer and a photosensitive layer which are stacked from bottom to top, and further comprises a first electrode and a second electrode, and the first electrode and the second electrode are connected through the photosensitive layer. According to the photoelectric detector, the two-dimensional transition metal chalcogenide is used as the photosensitive layer, the amorphous gallium oxide is introduced as the heat insulation layer, and the specific heat insulation layer not only can improve the photoelectric property of the photoelectric detector at room temperature, but also can improve the photoelectric property of the photoelectric detector at high temperature (100-250 DEG C).

The invention discloses a method for epitaxial growth of gallium oxide on a patterned composite substrate and a gallium oxide thin film, and belongs to the technical field of semiconductor manufacturing. Comprising the following steps: step 1, providing a patterned composite substrate, placing the patterned composite substrate in a reaction cavity, and baking the patterned composite substrate; 2, preparing a buffer layer on the patterned composite substrate; and step 3, preparing a gallium oxide thin film on the buffer layer. According to the invention, the problem of large difference of gallium oxide heteroepitaxy thermal expansion coefficients is solved, the problem of stress release of high-temperature epitaxial gallium oxide is optimized, the heat dissipation capability is improved, the flatness of an epitaxial gallium oxide film is improved, and the quality of the epitaxial film is also greatly improved.

The invention relates to a gallium oxide defect detection method. The method comprises the following steps: step 1, obtaining exciting light with a proper wavelength; 2, modulating the exciting light obtained in the step 1 so as to enable the exciting light to accurately enter a microscope system with proper energy; 3, irradiating the modulated exciting light to a gallium oxide sample on an electric displacement table through a microscope system, collecting fluorescence generated after the gallium oxide sample is excited through the microscope system, and transmitting the fluorescence to a spectrograph system to obtain a corresponding fluorescence spectrogram under a preset single pixel point position; and 4, setting a spectrograph system to collect the fluorescence intensity under a specific wavelength, and driving the gallium oxide sample to move through an electric displacement table so as to scan the fluorescence intensity of all pixel point positions in a sample detection range, thereby obtaining a gallium oxide defect fluorescence intensity imaging graph in the sample detection range. The method has the advantage of high sensitivity, can realize rapid nondestructive detection, and also reduces the detection cost at the same time.

The invention discloses a crystal growth method for avoiding formation of a gallium oxide polycrystal shoulder, and belongs to the technical field of crystal growth. The length of the slit on the surface of the mold is designed to be not more than one third of the length of the mold, and melt supply is strictly limited in a local area of the slit in a seeding stage, so that accurate starting of single crystals is realized; and then, in a crystal lateral expansion stage, actively regulating and controlling the interval between the upper surface of the mold and a crystal growth interface, so that a melt layer in the interval is used as a dynamic and expandable raw material supply channel. Therefore, the technical prejudice that a traditional edge-defined film-fed method depends on full-length solid slit feeding penetrating through a mold is broken through, a melt exposure area is reduced to be near a growth interface, spontaneous nucleation of a melt in a non-target area is fundamentally inhibited, formation of a polycrystal shoulder (square shoulder) is effectively avoided, raw material volatilization is remarkably reduced, thermal field uniformity is improved, and the method is suitable for large-scale production. And the crystal quality, the growth stability and the process efficiency are improved.

The invention discloses a device and a method for inhibiting crucible oxidation and raw material decomposition in gallium oxide single crystal growth, the device comprises a furnace body, an iraurita crucible, a thermal insulation layer, an induction coil, a lifting mechanism and the like, a temperature dynamic regulation and control system is arranged between the iraurita crucible and the thermal insulation layer; the temperature dynamic regulation and control system is used for monitoring the temperature distribution of the iridium crucible and the inner cavity in real time and regulating the heating frequency of the induction coil through feedback temperature; a melt decomposition monitoring system is arranged in the inner cavity close to the iraurita crucible and is used for detecting the gallium atom concentration and oxygen partial pressure change in the inner cavity in real time; and an atmosphere active adjusting system is also arranged in the furnace body. According to the device, the gallium oxide single crystal can be obtained, and the problems of crucible oxidation, melt decomposition and unstable crystal quality caused by a high-temperature environment can be solved; through dynamic monitoring and regulation, the oxidation and corrosion loss of the iraurita crucible is reduced, and meanwhile, the large-size and high-quality beta-Ga2O3 single crystal is obtained.

The invention discloses a gallium-cerium co-doped ITO target material and a preparation method thereof, and belongs to the field of transparent conductive oxide ceramic target materials, and the preparation method comprises the following steps: weighing indium oxide powder raw materials, tin oxide powder raw materials, gallium oxide powder raw materials and cerium oxide powder raw materials in proportion, and performing pretreatment; the raw material powder is subjected to independent ball milling till the raw materials reach the preset particle size; mixing the four kinds of slurry, and continuously performing ball milling to obtain uniform mixed slurry; adding a binder into the mixed slurry, and carrying out ball milling and mixing to form stable formed slurry; carrying out spray granulation on the formed slurry to obtain spherical precursor powder; pressing and forming the precursor powder to obtain a biscuit, then putting the biscuit into a sintering furnace, carrying out stepped sintering in an oxygen atmosphere, and naturally cooling to obtain the gallium-cerium co-doped ITO target material. According to the gallium-cerium co-doped ITO target material prepared by the method, the relative density is greater than or equal to 99.4%, the resistivity is less than or equal to 99.4%, and the three-point bending strength is greater than or equal to 230MPa.

The invention relates to the technical field of gallium oxide crystal preparation, in particular to a gallium oxide edge-defined film-fed crystal growth quality prediction method based on artificial intelligence. Obtaining multi-source data of gallium oxide edge-defined film-fed crystal growth, wherein the multi-source data comprises process parameters and dynamic data; multi-modal data features are obtained based on data feature extraction of the multi-source data; inputting the multi-modal data characteristics into a multi-modal fusion prediction model to obtain gallium oxide edge-defined film-fed crystal growth quality prediction data; and obtaining optimized process parameters through a genetic algorithm based on the gallium oxide edge-defined film-fed crystal growth quality prediction data. According to the method, stage features are extracted respectively, the process state of each stage can be evaluated in real time, the process root of the final quality problem is traced, the situation that the crystal growth condition cannot be predicted by depending on experience in a traditional method is avoided, comprehensive prediction of crystal growth is achieved, process parameters are fed back, and optimization of the process parameters is achieved.

The invention provides a gallium oxide power device and a manufacturing method thereof, and relates to the technical field of semiconductors, and the gallium oxide power device comprises a drain electrode, an n-doped gallium oxide substrate and an n-type gallium oxide drift region, the drift region comprises a first n-type gallium oxide drift region, a second n-type gallium oxide drift region and a fin-shaped channel; a high-k gate dielectric layer, a gate electrode, an insulating layer and a source electrode are sequentially arranged on two sides of the fin-shaped channel; an n-type heavily-doped top contact region is arranged in the middle of the insulating layer; in the first direction, the second n-type gallium oxide drift region, the fin-shaped channel and the n-type heavily doped top contact region are sequentially arranged in a laminated manner; the maximum height of the high-k gate dielectric layer is equal to the maximum height of the fin-shaped channel, and the maximum height of the gate is equal to the difference between the maximum height of the fin-shaped channel and the thickness of the high-k gate dielectric layer; the maximum height of the first n-type gallium oxide drift region is equal to that of the second n-type gallium oxide drift region; and the width of the second n-type gallium oxide drift region in the second direction is greater than that of the fin-shaped channel.

The invention discloses a gallium oxide crystal storage environment monitoring system and method based on artificial intelligence, and relates to the technical field of intelligent industrial monitoring, and the method comprises the steps: inputting a multi-source coupling data set into a space-time hypergraph model, carrying out the multi-source data coupling of a hypergraph construction layer, and carrying out the spatial dependence capture and time sequence feature extraction of a space-time convolution layer, the method comprises the steps of forming an environment parameter prediction matrix, performing damage quantification and probability mapping on a gallium oxide crystal damage image, obtaining a reference damage distribution diagram, performing coupling association on the environment prediction matrix and the reference damage distribution diagram, outputting an environment-damage weight matrix, and performing defect positioning on the reference damage distribution diagram according to the environment-damage weight matrix. And obtaining a damage sensitive area. According to the invention, through the space-time hypergraph model, the DBSCAN clustering analysis and the risk grade division strategy, the accuracy and the real-time performance of the monitoring scheme are enhanced.

The embodiment of the invention provides a method for improving the reaction rate of preparing gallium oxide from metal gallium. Comprising the following steps: mixing metal gallium with water to form a reaction mixture; adding an accelerant into the reaction mixture to promote the oxidation reaction of the metal gallium; carrying out chemical reaction on the reaction mixture containing the accelerant under the action of an external physical field to generate hydroxyl gallium oxide powder; and carrying out thermal cracking on the hydroxyl gallium oxide powder in inert gas to obtain gallium oxide powder. By adding the accelerant and utilizing an external physical field, the reaction rate of preparing gallium oxide from metal gallium is effectively improved through a plurality of links and a synergistic effect, the problem of low reaction rate in the prior art is solved, and powerful technical support is provided for efficient preparation of high-purity gallium oxide.

The application discloses a gallium oxide stacked full-surrounding gate field effect transistor and a preparation method thereof, and belongs to the field of semiconductor devices. The transistor mainly solves the problems of weak gate control ability, low on-off ratio and large threshold swing of the current gallium oxide MOS device. The transistor comprises, from bottom to top, an insulating substrate, a gallium oxide channel layer, a two-dimensional material dielectric layer and a gate surrounding the gallium oxide channel, an insulating layer and a repeated stacking structure above. The gate surrounding the channel is realized in the form of a peeled film, solving the problem of difficult process realization of the GAA structure. The four-side contact of the gate brings good channel control ability to the device. The application improves the on-off ratio of the device and can be used for manufacturing a gallium oxide MOSFET device with high switching characteristics.

The invention provides a photoelectric detector and a preparation method thereof, which are applied to the technical field of semiconductors, and the photoelectric detector comprises a gallium oxide light absorption layer; the two-dimensional Van der Waals material layer is arranged on the gallium oxide light absorption layer and is combined with the gallium oxide light absorption layer through Van der Waals force to form a vertical heterojunction; the metal electrode is formed on the surfaces of the gallium oxide light absorption layer and the two-dimensional Van der Waals material layer; wherein the work function of the two-dimensional Van der Waals material layer is matched with the work function of the gallium oxide light absorption layer, so that staggered energy band arrangement is formed at the interface of the vertical heterojunction. According to the invention, interface defects caused by lattice mismatch can be avoided, and non-radiative recombination of photon-generated carriers can be reduced, so that the response speed and photoelectric conversion efficiency of the photoelectric detector can be greatly improved.

The invention discloses a crystal growth device and a crystal growth method adopting a heat insulation plate to adjust a vertical temperature gradient, the heat insulation plate is introduced between a heater and a crystal growth crucible, the relative positions of the heater and the crystal growth crucible are kept immobile, and the temperature gradient in the vertical direction in a growth chamber is adjusted by utilizing the lifting of the heat insulation plate; therefore, solidification and crystallization of the semiconductor melt in the crucible from bottom to top are achieved, and the single crystal growth process is completed. The device and the crystal growth method are suitable for semiconductor crystal materials such as gallium oxide which can be grown by adopting a melt method. Compared with a traditional method that power is reduced from bottom to top through multiple sets of heaters or a crucible is lowered relative to the heaters, the crystal growth method can keep high stability of a thermal field in the crystal growth process and linear pushing of a crystal growth interface, and therefore the controllability of crystal growth is improved.

A method for forming a film, including: atomizing a raw material solution into a mist to form raw material mist; mixing raw material mist and a carrier gas to form gas mixture; placing a substrate on a placement section of susceptor; supplying gas mixture from an atomizer to the substrate to perform film formation by thermal reaction on substrate; and discharging gas mixture after the film formation through an exhaust unit, wherein in the step of supplying the gas mixture from atomizer to substrate to perform film formation by thermal reaction on the substrate, at least a part of gas mixture is supplied from a smooth section adjacent to placement section to a surface of substrate, the smooth section having a surface roughness of 200 μm or less. A method for forming a film capable of uniformly and stably producing a high-quality film on a surface of a large-diameter substrate.

The invention discloses an indium gallium zinc oxide target material as well as a preparation method and application thereof. The indium gallium zinc oxide target material comprises the following preparation raw materials in parts by weight: 15-45 parts of indium oxide, 29-32 parts of gallium oxide, 25-54 parts of zinc oxide powder and 0.01-0.05 part of antimony pentoxide. According to the indium gallium zinc oxide target material provided by the invention, the sintering temperature of the target material and the volatilization rate of raw materials can be effectively reduced under the condition of not additionally introducing oxygen.

Apparatuses and methods as described herein can be used to grow a Ga2O3 based single crystal using an Edge-defined film fed growth (EFG) method. The single gallium oxide crystal sheet can have a principle plane is offcut from a (100) crystallographic orientation. In one embodiment, the offcut is between 2 and 20 degrees. The single crystal can have a full width half mass of less than 50arcsec.

The invention discloses a diamond / gallium oxide ultraviolet detector and a preparation method thereof. The diamond / gallium oxide ultraviolet detector sequentially comprises a single crystal diamond substrate, an intrinsic single crystal diamond epitaxial layer, an finger-type ohmic electrode, a gallium oxide layer and a finger-type Schottky electrode from bottom to top, the finger-type ohmic electrode comprises an ohmic electrode strip array and an ohmic electrode pad which are connected with each other; the finger-type Schottky electrode comprises a Schottky electrode strip array and a Schottky electrode pad which are connected with each other; and the ohmic electrode strip array and the Schottky electrode strip array form a different-plane interdigital structure. Defects formed by the diamond layer and the gallium oxide layer are depleted, capture or recombination of interface defects to photon-generated carriers is reduced, electric field distribution can be optimized, collection of the carriers is facilitated, and the performance of the device is improved.

The invention provides a gallium oxide composite copper diamond ceramic material substrate and a preparation method and application thereof. The method comprises the steps that (1) a GaN superlattice buffer layer is formed on a sapphire substrate through low-temperature sputtering; (2) epitaxially growing a gallium oxide single crystal on the superlattice buffer layer to obtain a gallium oxide wafer; (3) bonding the gallium oxide wafer to a copper diamond ceramic material substrate; (4) decomposing the superlattice buffer layer by adopting a laser lift-off technology to obtain a gallium oxide wafer composite substrate; and (5) performing chemical mechanical polishing on the gallium oxide wafer surface of the gallium oxide wafer composite substrate to obtain the gallium oxide composite copper diamond ceramic material substrate. The gallium oxide composite copper diamond ceramic material substrate provided by the invention can be used as a substrate of a gallium oxide-based power device, the matching range is wide, the quality of a gallium oxide wafer is high, not only is the performance of the device improved, but also the heat dissipation problem of the device is effectively solved, and the method is simple in process and low in cost.