512 results about "Gallium oxide" patented technology

The invention discloses a gallium oxide solar-blind ultraviolet detector based on selective area etching and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric detection. Comprises from bottom to top: a substrate; the first epitaxial layer is located on the substrate, and the first epitaxial layer is a highly doped n-Ga2O3 layer; the second epitaxial layer is located on the first epitaxial layer, and the second epitaxial layer is a lightly doped n-Ga2O3 layer; the third epitaxial layer is located on the second epitaxial layer, the third epitaxial layer is a highly-doped p-NiO layer, and the third epitaxial layer is distributed at intervals through selective area etching; and the first ohmic contact layer is located on the area where the third epitaxial layer is distributed at intervals. The detector adopts a PN junction structure working in a reverse bias state, and compared with a Schottky structure, the detector has the advantages that the built-in electric field intensity and the leakage current level of a device are less affected by high-energy photon irradiation and working environment temperature change, and the anti-irradiation performance of the device and the working capability under an extreme temperature condition are effectively improved.

The invention discloses a Bridgman method growth gallium oxide single crystal abnormity detection method based on multi-mode perception, and relates to the technical field of single crystal preparation, and the method comprises the following steps: S1, collecting optical signals of a melt surface area in a Bridgman method growth gallium oxide single crystal process through a sensor array, synchronously acquiring temperature field data or infrared thermal image data of the region; the method comprises the following steps: acquiring an original spectral data set covering a local area according to a radiation signal under a micron-order spatial resolution, and obtaining initial radiation distribution information; according to the anomaly detection method for growing the gallium oxide single crystal by the Bridgman method based on multi-mode perception, dynamic tracking and accurate positioning of component anomaly in the growth process of the Bridgman method are realized, and an effective technical means is provided for improving the growth quality of the gallium oxide single crystal, reducing crystal defects and improving the process control capability.

The invention discloses a method for preparing a boron nitride-gallium oxide thin film flexible dual-band ultraviolet solar blind detector through Van der Waals stripping, and aims to improve the comprehensive performance of the detector. The method comprises the steps of h-BN substrate pretreatment and surface modification, Sn gradient doped beta-Ga2O3 layer preparation, heterojunction interface passivation treatment, two-step Van der Waals stripping and flexible transfer, ohmic contact electrode preparation, gate type Schottky contact electrode preparation, post-treatment and packaging. According to the core, the interface state density is reduced through Al2O3 passivation, and carrier transport is optimized through Sn gradient doping, so that the detector achieves 200-280 nm dual-band response, the peak response rate is high, the response time is short, the leakage current is low, the flexible bending stability is good, high performance and flexibility are both considered, and industrial application can be achieved.

The application belongs to the technical field of semiconductor power devices, and particularly discloses a method for laser stripping gallium oxide. The method is characterized in that a super-short pulse laser with a predetermined wavelength is irradiated into the gallium oxide, and a two-photon absorption process occurs when the laser is focused at a position with a specific thickness from the surface. The high temperature generated in the process causes thermal decomposition of the gallium oxide, thereby achieving the purpose of stripping the gallium oxide. Compared with the traditional substrate cutting technology, the stripping method can significantly reduce the cutting consumption of the gallium oxide substrate, and the cut substrate can be reused after polishing, which helps to reduce the manufacturing cost of the gallium oxide device.

The invention provides a high-voltage-resistant gallium oxide trench junction barrier Schottky diode. The high-voltage-resistant gallium oxide trench junction barrier Schottky diode comprises a cathode metal layer, a high-doping N-type gallium oxide substrate, a low-doping N-type gallium oxide epitaxial layer, an etching table top first dielectric layer, an etching table top second dielectric layer, a P-type nickel oxide layer, a dielectric layer and an anode metal layer which are sequentially stacked from bottom to top. According to the invention, P-type nickel oxide and gallium oxide are introduced to construct a heterostructure into a JBS structure, the JBS structure is combined with the etched trench to form a trench junction barrier Schottky diode, and the device has lower specific on-resistance, can bear higher reverse breakdown voltage, and is a gallium oxide JBS device with excellent performance.

The invention relates to a photoelectric detector and a preparation method and application thereof. The photoelectric detector comprises a substrate, a heat insulation layer and a photosensitive layer which are stacked from bottom to top, and further comprises a first electrode and a second electrode, and the first electrode and the second electrode are connected through the photosensitive layer. According to the photoelectric detector, the two-dimensional transition metal chalcogenide is used as the photosensitive layer, the amorphous gallium oxide is introduced as the heat insulation layer, and the specific heat insulation layer not only can improve the photoelectric property of the photoelectric detector at room temperature, but also can improve the photoelectric property of the photoelectric detector at high temperature (100-250 DEG C).

The invention relates to a gallium oxide defect detection method. The method comprises the following steps: step 1, obtaining exciting light with a proper wavelength; 2, modulating the exciting light obtained in the step 1 so as to enable the exciting light to accurately enter a microscope system with proper energy; 3, irradiating the modulated exciting light to a gallium oxide sample on an electric displacement table through a microscope system, collecting fluorescence generated after the gallium oxide sample is excited through the microscope system, and transmitting the fluorescence to a spectrograph system to obtain a corresponding fluorescence spectrogram under a preset single pixel point position; and 4, setting a spectrograph system to collect the fluorescence intensity under a specific wavelength, and driving the gallium oxide sample to move through an electric displacement table so as to scan the fluorescence intensity of all pixel point positions in a sample detection range, thereby obtaining a gallium oxide defect fluorescence intensity imaging graph in the sample detection range. The method has the advantage of high sensitivity, can realize rapid nondestructive detection, and also reduces the detection cost at the same time.

The invention discloses a crystal growth method for avoiding formation of a gallium oxide polycrystal shoulder, and belongs to the technical field of crystal growth. The length of the slit on the surface of the mold is designed to be not more than one third of the length of the mold, and melt supply is strictly limited in a local area of the slit in a seeding stage, so that accurate starting of single crystals is realized; and then, in a crystal lateral expansion stage, actively regulating and controlling the interval between the upper surface of the mold and a crystal growth interface, so that a melt layer in the interval is used as a dynamic and expandable raw material supply channel. Therefore, the technical prejudice that a traditional edge-defined film-fed method depends on full-length solid slit feeding penetrating through a mold is broken through, a melt exposure area is reduced to be near a growth interface, spontaneous nucleation of a melt in a non-target area is fundamentally inhibited, formation of a polycrystal shoulder (square shoulder) is effectively avoided, raw material volatilization is remarkably reduced, thermal field uniformity is improved, and the method is suitable for large-scale production. And the crystal quality, the growth stability and the process efficiency are improved.

The invention discloses a device and a method for inhibiting crucible oxidation and raw material decomposition in gallium oxide single crystal growth, the device comprises a furnace body, an iraurita crucible, a thermal insulation layer, an induction coil, a lifting mechanism and the like, a temperature dynamic regulation and control system is arranged between the iraurita crucible and the thermal insulation layer; the temperature dynamic regulation and control system is used for monitoring the temperature distribution of the iridium crucible and the inner cavity in real time and regulating the heating frequency of the induction coil through feedback temperature; a melt decomposition monitoring system is arranged in the inner cavity close to the iraurita crucible and is used for detecting the gallium atom concentration and oxygen partial pressure change in the inner cavity in real time; and an atmosphere active adjusting system is also arranged in the furnace body. According to the device, the gallium oxide single crystal can be obtained, and the problems of crucible oxidation, melt decomposition and unstable crystal quality caused by a high-temperature environment can be solved; through dynamic monitoring and regulation, the oxidation and corrosion loss of the iraurita crucible is reduced, and meanwhile, the large-size and high-quality beta-Ga2O3 single crystal is obtained.

The invention discloses a gallium-cerium co-doped ITO target material and a preparation method thereof, and belongs to the field of transparent conductive oxide ceramic target materials, and the preparation method comprises the following steps: weighing indium oxide powder raw materials, tin oxide powder raw materials, gallium oxide powder raw materials and cerium oxide powder raw materials in proportion, and performing pretreatment; the raw material powder is subjected to independent ball milling till the raw materials reach the preset particle size; mixing the four kinds of slurry, and continuously performing ball milling to obtain uniform mixed slurry; adding a binder into the mixed slurry, and carrying out ball milling and mixing to form stable formed slurry; carrying out spray granulation on the formed slurry to obtain spherical precursor powder; pressing and forming the precursor powder to obtain a biscuit, then putting the biscuit into a sintering furnace, carrying out stepped sintering in an oxygen atmosphere, and naturally cooling to obtain the gallium-cerium co-doped ITO target material. According to the gallium-cerium co-doped ITO target material prepared by the method, the relative density is greater than or equal to 99.4%, the resistivity is less than or equal to 99.4%, and the three-point bending strength is greater than or equal to 230MPa.

The invention relates to the technical field of gallium oxide crystal preparation, in particular to a gallium oxide edge-defined film-fed crystal growth quality prediction method based on artificial intelligence. Obtaining multi-source data of gallium oxide edge-defined film-fed crystal growth, wherein the multi-source data comprises process parameters and dynamic data; multi-modal data features are obtained based on data feature extraction of the multi-source data; inputting the multi-modal data characteristics into a multi-modal fusion prediction model to obtain gallium oxide edge-defined film-fed crystal growth quality prediction data; and obtaining optimized process parameters through a genetic algorithm based on the gallium oxide edge-defined film-fed crystal growth quality prediction data. According to the method, stage features are extracted respectively, the process state of each stage can be evaluated in real time, the process root of the final quality problem is traced, the situation that the crystal growth condition cannot be predicted by depending on experience in a traditional method is avoided, comprehensive prediction of crystal growth is achieved, process parameters are fed back, and optimization of the process parameters is achieved.

The invention provides a gallium oxide power device and a manufacturing method thereof, and relates to the technical field of semiconductors, and the gallium oxide power device comprises a drain electrode, an n-doped gallium oxide substrate and an n-type gallium oxide drift region, the drift region comprises a first n-type gallium oxide drift region, a second n-type gallium oxide drift region and a fin-shaped channel; a high-k gate dielectric layer, a gate electrode, an insulating layer and a source electrode are sequentially arranged on two sides of the fin-shaped channel; an n-type heavily-doped top contact region is arranged in the middle of the insulating layer; in the first direction, the second n-type gallium oxide drift region, the fin-shaped channel and the n-type heavily doped top contact region are sequentially arranged in a laminated manner; the maximum height of the high-k gate dielectric layer is equal to the maximum height of the fin-shaped channel, and the maximum height of the gate is equal to the difference between the maximum height of the fin-shaped channel and the thickness of the high-k gate dielectric layer; the maximum height of the first n-type gallium oxide drift region is equal to that of the second n-type gallium oxide drift region; and the width of the second n-type gallium oxide drift region in the second direction is greater than that of the fin-shaped channel.

The application discloses a gallium oxide stacked full-surrounding gate field effect transistor and a preparation method thereof, and belongs to the field of semiconductor devices. The transistor mainly solves the problems of weak gate control ability, low on-off ratio and large threshold swing of the current gallium oxide MOS device. The transistor comprises, from bottom to top, an insulating substrate, a gallium oxide channel layer, a two-dimensional material dielectric layer and a gate surrounding the gallium oxide channel, an insulating layer and a repeated stacking structure above. The gate surrounding the channel is realized in the form of a peeled film, solving the problem of difficult process realization of the GAA structure. The four-side contact of the gate brings good channel control ability to the device. The application improves the on-off ratio of the device and can be used for manufacturing a gallium oxide MOSFET device with high switching characteristics.

The invention provides a photoelectric detector and a preparation method thereof, which are applied to the technical field of semiconductors, and the photoelectric detector comprises a gallium oxide light absorption layer; the two-dimensional Van der Waals material layer is arranged on the gallium oxide light absorption layer and is combined with the gallium oxide light absorption layer through Van der Waals force to form a vertical heterojunction; the metal electrode is formed on the surfaces of the gallium oxide light absorption layer and the two-dimensional Van der Waals material layer; wherein the work function of the two-dimensional Van der Waals material layer is matched with the work function of the gallium oxide light absorption layer, so that staggered energy band arrangement is formed at the interface of the vertical heterojunction. According to the invention, interface defects caused by lattice mismatch can be avoided, and non-radiative recombination of photon-generated carriers can be reduced, so that the response speed and photoelectric conversion efficiency of the photoelectric detector can be greatly improved.

A method for forming a film, including: atomizing a raw material solution into a mist to form raw material mist; mixing raw material mist and a carrier gas to form gas mixture; placing a substrate on a placement section of susceptor; supplying gas mixture from an atomizer to the substrate to perform film formation by thermal reaction on substrate; and discharging gas mixture after the film formation through an exhaust unit, wherein in the step of supplying the gas mixture from atomizer to substrate to perform film formation by thermal reaction on the substrate, at least a part of gas mixture is supplied from a smooth section adjacent to placement section to a surface of substrate, the smooth section having a surface roughness of 200 μm or less. A method for forming a film capable of uniformly and stably producing a high-quality film on a surface of a large-diameter substrate.

The invention discloses a diamond / gallium oxide ultraviolet detector and a preparation method thereof. The diamond / gallium oxide ultraviolet detector sequentially comprises a single crystal diamond substrate, an intrinsic single crystal diamond epitaxial layer, an finger-type ohmic electrode, a gallium oxide layer and a finger-type Schottky electrode from bottom to top, the finger-type ohmic electrode comprises an ohmic electrode strip array and an ohmic electrode pad which are connected with each other; the finger-type Schottky electrode comprises a Schottky electrode strip array and a Schottky electrode pad which are connected with each other; and the ohmic electrode strip array and the Schottky electrode strip array form a different-plane interdigital structure. Defects formed by the diamond layer and the gallium oxide layer are depleted, capture or recombination of interface defects to photon-generated carriers is reduced, electric field distribution can be optimized, collection of the carriers is facilitated, and the performance of the device is improved.

The application discloses a gallium oxide vertical device and a preparation method thereof. The gallium oxide vertical device comprises an epitaxial structure, a cathode and an anode matched with the epitaxial structure, the epitaxial structure comprises a heavily doped n-type Ga2O3 substrate, a lightly doped n-type Ga2O3 drift region, an interlayer and a p-type nitride epitaxial layer which are sequentially stacked, the lightly doped n-type Ga2O3 drift region, the interlayer and the p-type nitride epitaxial layer form a p-i-n structure, the cathode forms an ohmic contact with the heavily doped n-type Ga2O3 substrate, and the anode forms an ohmic contact with the p-type nitride epitaxial layer, wherein the material of the interlayer is an Al-containing compound, and the surface layer region of the lightly doped n-type Ga2O3 drift region close to the interlayer also has Al elements, the Al elements are diffused into the lightly doped n-type Ga2O3 drift region in the bonding process under high pressure.

The utility model relates to gallium oxide grinder technical field discloses a kind of gallium oxide grinding mechanism with screening structure, including bearing support, the bottom of bearing support is fixedly connected with moving wheel, the surface of bearing support is fixedly connected with support plate, the top of support plate is clamped with driving motor, the output end belt of driving motor is connected with transmission belt one;The inner wall belt of transmission belt one is connected with transmission wheel one, the surface belt of transmission wheel one is connected with transmission belt two.The utility model is connected with filter screen plate by setting the right end thread connection of grinding shell, can carry out preliminary filtration to material after grinding, prevent the material of larger particle from discharging directly, and the screening net of fixed frame inside is inserted further to the material screening, ensure that only the material reaching the material of specified particle size can pass through screening net and enter collection box, not only improve the grinding quality of material, but also facilitate the classification collection of different particle size material.

The present application discloses a gallium oxide fin power device and a manufacturing method therefor. The manufacturing method for the gallium oxide fin power device comprises: providing, on a substrate, a mask provided with at least one nano-pattern window, and forming metal gallium on the substrate exposed from the nano-pattern window; performing first annealing treatment on the metal gallium, and during the first annealing treatment, adjusting the temperature of the first annealing treatment, so that the metal gallium located within the nano-pattern window diffuses on the substrate to form gallium droplets having a specified shape, radial size and thickness, wherein the shape of the orthographic projections of the gallium droplets is the same as the shape of the orthographic projection of a fin structure to be formed; and using the gallium droplets as a catalyst to epitaxially grow gallium oxide on the substrate exposed from the nano-pattern window, growing the gallium oxide longitudinally to form the fin structure, and manufacturing a field-effect transistor on the substrate provided with the fin structure.

The application provides a thin film with an epsilon phase gallium oxide hetero-epitaxial structure and a preparation method thereof, which comprises, from bottom to top, a substrate layer, a first gallium oxide layer and a second gallium oxide layer; the first gallium oxide layer is an epsilon phase gallium oxide layer doped with magnesium Mg, and the magnesium Mg doping acts as an acceptor type trap in the epsilon phase gallium oxide, effectively compensates for the donor type defects of the epsilon phase gallium oxide, and improves the overall resistivity of the epsilon phase gallium oxide thin film. The preparation method adopts a metal organic chemical vapor deposition method, and the growth temperature of the second gallium oxide layer is higher than that of the first gallium oxide layer; and the molar flow ratio of the magnesium source to the gallium source is controlled to be 0.0001-0.1 during preparation. The application introduces appropriate Mg doping through a nucleation layer stage, so that the Mg acts as an acceptor type trap to compensate for donor type defects, while improving the crystal nucleation quality, reducing dislocations and leakage channels, and realizing the dual optimization of the crystal quality and electrical performance of the epsilon phase gallium oxide thin film, thereby effectively reducing the thin film leakage current and improving the resistivity.

The application discloses a method for preparing a large-size single crystal by a crucible-free method and belongs to the technical field of semiconductor material preparation. The method comprises the following steps: a. providing a plurality of small-size seed crystals, wherein the seed crystals are single crystal seed crystals; b. splicing the plurality of small-size seed crystals to form a large-size composite seed crystal; c. performing single crystal growth on the composite seed crystal, wherein in the single crystal growth process, a single crystal region with a growth advantage gradually expands and dominates through crystal direction competition; d. processing the grown single crystal region with the expanded and dominant single crystal into a new seed crystal for splicing and growth in the next round; and e. repeating steps b-d to obtain a large-size single crystal. The method ingeniously bypasses the problem of a traditional expanding process through a strategy of "dividing the whole into parts and iterative optimization", can prepare a high-quality single crystal with a size far greater than that of an initial seed crystal on the basis of a small-size seed crystal at a low cost, and provides a brand-new and effective technical path for a size breakthrough of gallium oxide and other single crystals.

The invention provides a polarization signal amplification photoelectric detector based on gallium oxide and a preparation method thereof. The polarization signal amplification photoelectric detector based on gallium oxide comprises a gallium oxide single crystal substrate; the gallium oxide photoelectric detector is arranged on the gallium oxide single crystal substrate, and the gallium oxide photoelectric detector is configured to generate different photoelectric responses to the solar-blind ultraviolet light in different polarization directions by using the in-plane anisotropy of a gallium oxide material and output electric signals changing along with the polarization directions; the gallium oxide transistor is arranged on the gallium oxide single crystal substrate, a grid electrode of the gallium oxide transistor is electrically connected with the signal output end of the gallium oxide photoelectric detector so as to receive an electric signal changing along with the polarization direction to serve as input of the grid electrode, the gallium oxide transistor works in a sub-threshold region, and the change of the polarization direction causes the change of grid electrode voltage; and an electric signal with enhanced amplitude is output from the drain electrode of the gallium oxide transistor, so that on-chip amplification of the polarization signal is realized.

This invention provides a PVD-grown undoped ε-Ga₂O₃ thin film and its preparation method. The preparation method includes the following steps: Step S1, preparing a substrate and target material, and placing them in the main deposition chamber of a physical vapor deposition (PVD) apparatus; Step S2, heating the substrate to above 650°C, introducing oxygen as the growth atmosphere gas, and using a gallium oxide target material with a tin atomic ratio of 0.5-2.5% to deposit a first thin film on the substrate; Step S3, depositing an aluminum oxide layer as a diffusion barrier layer on the surface of the first thin film; Step S4, using a pure gallium oxide target material, depositing a thin film on the surface of the aluminum oxide layer; cooling to room temperature to obtain the undoped ε-Ga₂O₃ thin film. The undoped ε-Ga₂O₃ photodetector prepared by the pulsed laser deposition system of this invention has a much higher PDCR value than tin-doped ε-Ga₂O₃ devices.

The invention provides a gallium oxide high-power device with efficient comprehensive heat dissipation performance and a manufacturing method of the gallium oxide high-power device. According to the invention, by thinning the substrate, the thermal resistance when heat flows through the substrate is reduced, the structure is more compact, and the packaging volume is reduced. And a double-sided packaging structure is used, and the anode and the cathode of the chip are simultaneously connected with the substrate by using solder, so that high heat conduction paths on the upper side and the lower side of the device are provided, an efficient double-sided heat dissipation channel is formed, and the junction-to-case thermal resistance and the junction temperature of the device are remarkably reduced. And meanwhile, the high-thermal-conductivity plastic packaging material is used, so that the heat dissipation capability is improved, and the packaging material is flexible after being cured, can effectively absorb and buffer thermal stress generated by mismatching of thermal expansion coefficients among materials, and is suitable for protecting ultrathin and brittle gallium oxide chips and preventing the ultrathin and brittle gallium oxide chips from being fractured and layered under stress. The device package can have lower junction temperature and thermal resistance and low stress, so that the gallium oxide device with excellent performance is obtained.

The invention belongs to the technical field of semiconductors, discloses a silicon carbide substrate Mn-doped gallium oxide-based resistive random access memory and a preparation method thereof, and solves the problems of difficult thermal management, insufficient substrate heat dissipation capability, to-be-improved switch ratio, complex preparation process and the like of the existing gallium oxide resistive random access memory. The resistive random access memory comprises a SiC substrate, a Mn-doped beta-Ga2O3 thin film, a tungsten electrode layer and a top electrode, wherein the tungsten electrode layer is superposed on a first surface of the SiC substrate, and the Mn doped beta-Ga2O3 thin film is superposed on a second surface of the SiC substrate; and the top electrode is formed on the Mn doped beta-Ga2O3 thin film.

A method for preparing a γ-Ga2O3 nanomaterial, comprising a step of treating a mixture comprising a gallium element, water, and an organic solvent with ultrasound. The preparation process and equipment requirements are simple, the cost of materials is low, there are fewer experimental parameters, and experimental conditions are mild, with no additional heat source and / or pressure being applied. The γ-Ga2O3 nanomaterial can be prepared, in kilograms or above, quickly at an ambient temperature and pressure.

This invention relates to a method for preparing ε-Ga2O3 thin films based on chemical vapor deposition, comprising: placing gallium oxide powder in a heating zone of a quartz tube, and placing a substrate in a deposition zone of the quartz tube; the deposition zone and the heating zone are integrally connected and communicate with each other; a predetermined first distance is maintained between the substrate and the heating zone; a mixture of carrier gas and hydrogen is introduced from one end of the heating zone of the quartz tube; the proportion of hydrogen in the mixture is 5%-10%; the heating zone of the quartz tube is heated to a predetermined temperature under normal pressure and held at the predetermined temperature for a predetermined time, so that the gallium oxide powder is reduced to gallium vapor and water vapor under the action of hydrogen, and at the same time, the gallium vapor and water vapor generate gallium hydroxide and hydrogen in the deposition zone with the flow of the mixture gas, and then the gallium hydroxide is thermally decomposed and deposited on the substrate in the deposition zone, followed by annealing to obtain an ε-Ga2O3 thin film; wherein the predetermined temperature of the heating zone is 900℃-1200℃; and the temperature of the deposition zone is 500℃-850℃.

The present application relates to the technical field of wide band gap semiconductor material preparation, and particularly relates to a gallium oxide crystal twin crystal growth inhibition method based on thermal field gradient induction, which comprises the following steps: a gallium oxide crystal is prepared by using a guided mode method growth equipment; after the crystal enters a shoulder separation stage, a horizontal direction temperature gradient field is established in an upper region of a mold by regulating a partition power of a heater or starting a local cooling device; according to a position and an extension direction of a twin crystal in a seed crystal, a low-temperature side of the horizontal direction temperature gradient field is arranged in a reverse direction of the extension direction of the twin crystal; the horizontal direction temperature gradient field is maintained for a period of time until it is observed that a growth direction of the twin crystal is deflected to a low-temperature side edge region of the crystal; after the twin crystal is induced to an edge of the crystal or eliminated, the horizontal direction temperature gradient field is gradually reduced, and normal isochiral growth conditions are restored, so that the twin crystal in the existing seed crystal can be directly inhibited without replacing the seed crystal, and production cost and time are reduced.

The invention relates to the technical field of semiconductors, in particular to a gallium oxide nanowire / porous gallium nitride heterojunction and a preparation method and application thereof. The method comprises the following steps: sequentially growing a GaN buffer layer, a u-GaN layer and a p-GaN layer on a substrate to obtain a base; in mixed gas of hydrogen and inert gas, performing thermal decomposition on the substrate to obtain porous gallium nitride; heating the porous gallium nitride in mixed gas of oxygen and inert gas to obtain a gallium oxide / porous gallium nitride heterojunction; spraying gold on the surface of the gallium oxide / porous gallium nitride heterojunction, and annealing the gold into gold particles in an inert atmosphere; in mixed gas of oxygen and inert gas, a gallium source is arranged beside the gallium oxide layer in the previous step for heating, and the gallium oxide nanowire / porous gallium nitride heterojunction is obtained. The prepared heterojunction has excellent carrier transport characteristics, light absorption efficiency and charge separation capability, and is suitable for the fields of solar-blind ultraviolet photoelectric detection, photocatalysis, high-sensitivity sensors, high-power electronic devices and the like.

The invention relates to a preparation method of a gallium ion-doped lithium lanthanum zirconium oxide solid electrolyte, and belongs to the field of solid electrolytes. The preparation method comprises the following steps: adding lithium carbonate, lanthanum oxide, zirconium oxide, gallium oxide, a Ga < 3 + >-hydrogen-based silsesquioxane chelating auxiliary agent and ethanol into a ball milling tank for ball milling, drying, and then putting into a muffle furnace for pre-sintering to obtain pre-sintered powder; putting the pre-sintered powder into the ball milling tank again for ball milling, and tabletting to obtain a green body; and placing the green body in a sintering furnace, and carrying out high-temperature sintering in an oxygen atmosphere to obtain the gallium ion-doped lithium lanthanum zirconium oxide solid electrolyte, the Ga < 3 + >-hydrogen-based silsesquioxane chelating auxiliary agent is prepared from gallium fluoride, lithium carbonate, hydrogen-based silsesquioxane, citric acid and deionized water; by doping gallium ions, the ionic conductivity can be remarkably improved; and after the lithium lanthanum zirconium oxide is placed in an air atmosphere for 30 days, the retention rate of ionic conductivity is greater than 97%, and the problem of poor stability of lithium lanthanum zirconium oxide is solved.