The application discloses a preparation method of a
lead selenide room-temperature mid-wave
infrared detector, which comprises the following steps: (1) adopting a magnetron
sputtering technology, and depositing a
lead selenide film layer on a substrate by using
oxygen as a reaction gas; (2) placing the
lead selenide film in a horizontal
tube furnace to realize high-temperature oxidation in
pure oxygen at normal pressure; and (3) placing the lead
selenide film in a
vertical tube furnace to realize high-temperature iodization in an environment at normal pressure. The lead
selenide film is prepared by the magnetron
sputtering technology, compared with
chemical bath deposition, the film quality is effectively improved, large-area and high-uniformity film preparation is realized, the magnetron
sputtering film is subjected to high-temperature "oxidation-iodization" treatment, the magnetron sputtering film has excellent
light response to
infrared light, the
sensitization technology is specific, clear and good in
repeatability, the sensitized lead
selenide film layer and a top
electrode are combined to form a photoconductive type
detector, and the device has a room-temperature device specific detectivity of 7.6*10 9 Jones@4.3 mu m, and excellent performance.