60results about How to "Good light response" patented technology

The invention is a self-cross-linked polyvinyl butyral (PVB) binder for organic photoconductors (OPC's) used in electrophotography. The no cross-linked form of the binder is available from Monsanto Co. in the U.S.A. a Butvar TM , and from Sekisui Chemical Co. in Japan as Slek TM . I discovered that the PVB may be self-cross-linked by subjecting it to a thermal cure at between about 150 DEG -300 DEG C. for about 2 hours. I think other ways of cross-linking, for example, e-beam, UV or X-ray radiation, will achieve results similar to those I obtained with heat. No cross-linker, nor cross-linkable copolymer nor catalyst is required to accomplish the cross-linking. After self-cross-linking, the PV has good mechanical durability and good anti-solvent characteristics. In addition, he self-cross-linked PVB's glass transition temperature (Tg) increases from about 65 DEG C. to about 170 DEG C. Also, when conventional photoconductor pigments are dispersed in the self-cross-linked PVB, they are well dispersed, and the resulting OPC's have good charge acceptance, low dark decay, and, in general, good photodischarge characteristics. Also, OPC's with the self-cross-linked PVB exhibited improved adhesion, so multi-layered OPC's made according to this invention will hav improved inter-layer bonding and longer economic lives.

The invention discloses a nanometer layered horizontal homogeneous PN diode and fabrication method and application thereof. A p-type transition metal chalcogenide film and an n-type transition metal chalcogenide film both are arranged on an upper surface of a dielectric layer and are transversely connected, an electrode layer is longitudinally connected or transversely connected with the p-type transition metal chalcogenide film and the n-type transition metal chalcogenide film, and the p-type transition metal chalcogenide film and the n-type transition metal chalcogenide film comprises the same transition metal chalcogenide. The fabrication method is simple, high-efficiency and low-damage p-type doping of the transition metal chalcogenide is achieved through oxygen plasma by magnetron sputtering, effective and controllable doping is achieved, and the obtained diode is used for a photoelectric detector and has more rapid optical response and higher detection rate.

The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.

The invention belongs to the technical field of semiconductor photodetection, and particularly relates to a self-powered photodetector based on Cs3Cu2I5 perovskite and a preparation method thereof. The self-powered photodetector includes an insulating transparent substrate, the upper end of the substrate is provided with a carrier transport layer, a Cs3Cu2I5 light absorption layer and a first contact electrode sequentially from bottom to top, and a second contact electrode is arranged on the carrier transport layer. According to the preparation method, the carrier transport layer is prepared by adopting a magnetron sputtering or metal organic chemical vapor deposition method, the Cs3Cu2I5 light absorption layer is prepared by adopting a solution or vapor phase co-evaporation method, staggered energy band arrangement is ensured to be formed between the carrier transport layer and the Cs3Cu2I5 light absorption layer, the formation of a built-in electric field at the interface of a heterojunction is used to enable photogenerated carriers to be separated, and the detector can thus work under zero volt. The preparation method is simple, each functional layer is environment-friendly, theprepared device has a high detection rate for ultraviolet light, the ultraviolet-visible light suppression ratio exceeds 10 of the fourth power, and the application prospect is good.

The invention discloses a self-driven heterojunction infrared photodetector based on a two-dimensional palladium diselenide nano-film and germanium and a preparation method thereof. The two-dimensional palladium diselenide nano-film is deposited on the surface of a germanium substrate; metal electrodes in ohmic contact with the two-dimensional palladium diselenide nano-film and the germanium substrate are arranged on the two-dimensional palladium diselenide nano-film and the germanium substrate; the palladium diselenide and the germanium form a heterojunction, and the two metal electrodes serve as two output stages, so that the self-driven heterojunction infrared photodetector is constructed. The self-driven heterojunction infrared photodetector disclosed by the invention has simple preparation process, which realizes a wide response wave band, high responsivity, high detection rate and fast response speed at room temperature, and provides a way for designing a high-performance wide-band infrared detector.

The invention relates to a surface photocatalytic modification method for an inorganic membrane, particularly a surface photocatalytic modification method for a water treatment inorganic membrane, which aims to solve the problem that the existing inorganic membrane can be easily influenced by the membrane pollution, can be easily blocked at the membrane pores and does not have the photocatalytic property. The method comprises the following steps: 1. putting the inorganic membrane in a reaction chamber, and preheating the inorganic membrane and reaction chamber body; and sequentially carrying out Ti source deposition, O source deposition, Ti source deposition, N source doping deposition, Zn source deposition, O source deposition, Zn source deposition and N source doping on the surface of the pretreated inorganic membrane to perform multiple-atomic-layer deposition, thereby obtaining the photocatalytic modified inorganic membrane for water treatment. The atomic layer deposition process is utilized to form the nitrogen-doped multicomponent composite photocatalytic deposition membrane. The inorganic membrane has favorable membrane pollution resistance, and the removal rate of methylene blue organic dyes by photocatalytic degradation is up to 95%.

The invention discloses a bismuth-based perovskite material and a preparation method thereof. The chemical formula of the material is (C12H14N2) BiX5, wherein C12H14N2 represents a positive bivalent methyl viologen cation, and X represents any one or more of Cl, Br and I. The material is prepared by carrying out solvothermal reaction in a methanol solution by taking a bismuth source and haloid acid as raw materials and 4, 4'-dipyridyl or methyl viologen as a structure directing agent. The preparation method disclosed by the invention is simple and convenient to operate and good in repeatability, the photoelectric property of the material can be effectively regulated and controlled by changing halogen, and meanwhile, the metal element bismuth is used for replacing a toxic element lead, so that harm to a human body and pollution to the environment are reduced. The material disclosed by the invention is good in wet and thermal stability, excellent in photoelectric property and good in semiconductor property, and has a wide application prospect in the fields of solar cells, photoelectric materials, photoelectric detection, photo-catalysis/photo-electro-catalysis and the like.

The invention relates to the technical field of gas sensor production, in particular to a production method of a NO2 photoelectric gas-sensitive sensor. The production method includes the steps of firstly, producing a ZnO seed layer; secondly, growing a ZnO nano wall; thirdly, aging to obtain the NO2 photoelectric gas-sensitive sensor. The produced NO2 photoelectric gas-sensitive sensor has the advantages that the sensor can detect the ppb level, and the gas sensitivity of the sensor to 5ppb NO2 is 7.482; the sensor is high in sensitivity, the photo-sensitivity of the sensor to light with the wavelength being 365nm under room temperature is 6.16, and the sensitivity of the sensor to 50ppm NO2 is 57.5; the sensor is good in stability and easy in material obtaining and has the coupling property of photo-sensitivity and gas sensitivity.

The invention discloses a heterojunction type near-infrared photoelectric detector based on a two-dimensional platinum diselenide nano film and a cadmium telluride crystal, and a preparation method thereof. The two-dimensional platinum diselenide nano film is tiled on the surface of the cadmium telluride crystal, metal electrodes in ohmic contact with the two-dimensional platinum diselenide nanofilm and the cadmium telluride crystal are respectively arranged on the two-dimensional platinum diselenide nano film and the cadmium telluride crystal, cadmium telluride and platinum diselenide forma heterojunction, and the two metal electrodes are used as two output stages, that is, constructed as the heterojunction type near-infrared photoelectric detector. The heterojunction type near-infrared photoelectric detector disclosed by the invention has a simple preparation process, achieves a wide response band, high responsivity, a high detection rate and a high response speed at the room temperature, and provides a way for the design of high-performance infrared detectors.

The invention provides a two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector and a preparation method thereof. The two-dimensional Te nanosheet flexible transparent near-infrared photoelectric detector comprises a flexible substrate, a transparent electrode and two-dimensional Te nanosheets; the transparent electrode is located on the flexible substrate, and the material of the transparent electrode is MXene-Ti3C2Tx; the two-dimensional Te nanosheets are erected on the positive electrode and the negative electrode of the transparent electrode and are communicated with the positive electrode and the negative electrode of the transparent electrode. The electrode is made of the two-dimensional material and can be in better contact with the two-dimensional active material, so that the device has lower dark current, and the current is more stable along with time change in the whole test process.

The invention discloses a homojunction photodiode and triode based on methylamine lead bromide single crystal and a preparation method thereof. An MAPbBr<3> single crystal becomes an n-type semiconductor by doping BiBr<3>, an undoped MAPbBr<3> single crystal is a weak p-type semiconductor, n-type and p-type MAPbBr<3> single crystals form a homojunction, and then a p-n homojunction photodiode and an n-p-n homojunction phototriode are constructed. The detector provided by the invention is simple in preparation process and good in device performance, and opens up a new prospect for the application of the hybrid perovskite single crystal material in a photoelectric detector.

The invention discloses an application of a two-dimensional palladium selenide nano film for detection of broadband polarized light signals. The application is characterized in that the two-dimensional palladium selenide nano film is taken as a light sensitive layer to make a polarization-sensitive photoelectric detector, and detection of the broadband polarized light signals is realized. The application is advantaged in that the polarization-sensitive photoelectric detector made based on the two-dimensional palladium selenide nano film has significant response to the polarized light signals,and thereby accurate and stable detection of the wavelength-covered ultraviolet, visible and infrared polarized light signals in the complex electromagnetic environment can be performed.

The invention discloses a hydrogel system for capture and fixed-point release of circulating tumor cells. The hydrogel system is characterized by being prepared by the following method: 1) preparing a Ti3C2Tx two-dimensional material; (2) preparing Ti3C2Tx single-layer nanosheet suspension liquid by utilizing a Ti3C2Tx two-dimensional material; and 3) preparing a hydrogel film from the Ti3C2Tx single-layer nanosheet suspension and gelatin, performing surface carboxylation modification on the hydrogel film, and coupling an EpCAM antibody to obtain the hydrogel system. The hydrogel system provided by the invention has good photoresponse, thermal stability and cell adhesion, and specific capture of circulating tumor cells can be realized by modifying the surface of a hydrogel film with a coupling antibody; and the hydrogel system disclosed by the invention can be rapidly heated under the irradiation of laser with a specific wavelength, so that fixed-point release of circulating tumor cells can be realized.

The invention discloses a room temperature wide spectrum photoelectric detector based on a two-dimensional cobalt selenide thin film and a preparation method. A cobalt film with certain thickness is grown by sputtering on a substrate using dual-ion-beam sputtering technology; and on the basis, with cobalt selenide power and selenium powder being reaction source and argon as carrier gas, the cobaltselenide thin film is prepared using chemical vapor deposition method. Metal electrodes in ohmic contact with the cobalt selenide thin film are arranged on the cobalt selenide thin film as a source electrode and a drain electrode, and the photoelectric detector based on the two-dimensional cobalt selenide thin film is constituted. The obtained photoelectric detector based on the two-dimensional cobalt selenide thin film can realize an initial wide spectrum response waveband of 450 nanometer to 10.6 micrometer laser under room temperature, and the response rate reaches 2.58 watt/ampere. According to the provided room temperature wide spectrum photoelectric detector based on novel high-performance two-dimensional materials, the application of two-dimensional cobalt selenide materials is widened in the fields photoelectricity and magnetic-optical technology.

The invention relates to the technical field of preparation methods of light-sensitive detectors and in particular relates to a ZnO nanowall RGO heterojunction photoelectric gas sensor and a preparation method thereof. The preparation method comprises the following steps: 1) preparing porous reduced graphene; 2) growing a ZnO seed layer in situ on the surface of RGO; 3) growing a ZnO nanowall in situ on the surface of RGO; and 4) ageing, so that the finished product is obtained. By realizing the technical scheme, the problems in the prior art that photosensitivity and NO2 sensitivity are low under the normal temperature condition are solved.

The invention belongs to the technical field of environmental engineering, and provides a preparation method and application of a photocatalytic material for efficiently degrading tetrabromobisphenol A by visible light. C-coated ZnC, Bpn and g-C3N4 are used as precursors, and the g-C3N4/C-coated ZnC/Bpn (CZB) ternary heterojunction photocatalytic material is constructed through a high-temperature calcination method. C-coated ZnC and Bpn are introduced into g-C3N4 containing N defects to construct a ternary heterojunction, so that the spectrum utilization rate and the conductivity can be improved, a band gap structure can be optimized, and relatively strong oxidation-reduction capability is generated. The migration capability of photon-generated carriers on the CZB is also enhanced, so that the recombination rate of the CZB is inhibited, and the photocatalytic degradation performance is improved. Under the visible light condition, the degradation rate of the prepared heterojunction material on TBBPA can reach 96% or above within 50 min. The ternary heterojunction photocatalyst is simple in preparation method, wide in raw material source, low in price and easy for large-scale production.

The invention relates to ultra-small-size copper sulfide nano-particles as well as a preparation method and application of the ultra-small-size copper sulfide nano-particles. The copper sulfide nanoparticles are synthesized by adopting the copper ion-doped carbon quantum dots, and the synthesized copper ion-doped carbon quantum dots have more excellent photoresponse and electron transmission effects. The prepared ultra-small-size copper sulphide nano-particles overcome the obstruction of extremely poor water solubility in application of copper sulphide nano-materials, and can show good solubility and long-term stability when water is used as a solvent. The water-soluble stable ultra-small-size copper sulphide nanoparticles prepared by the preparation method disclosed by the invention show an excellent photothermal conversion effect under the irradiation of near-infrared laser, the preparation process is simple and rapid, and the requirements on instruments and equipment are relatively low.

The invention provides a transistor device with a stretchable field effect. The device comprises a stretchable flexible substrate, a deposited metal gate electrode, a two-dimensional insulating material and/or a flexible dielectric layer, a two-dimensional semiconductor material grown on the flexible substrate, and a source-drain metal electrode. The invention also provides a preparation method and application of the device. The manufacturing method of the device is improved, the flexible substrate of the device to be manufactured is pre-stretched and fixed, and then the two-dimensional semiconductor material is directly transferred on the stretched substrate to manufacture the device. The two-dimensional semiconductor material such as molybdenum disulfide is used as a channel material of the device, and the two-dimensional insulating material such as boron nitride is used as a dielectric layer of the device. After the device is manufactured, the substrate is released, the material on the substrate is shrunk, and the stretchable device of the wrinkle structure is formed. The stable field effect transistor three-terminal device is successfully prepared and can be applied to logic circuits, photoelectric detection and nerve synaptic morphological devices. The problem that a two-dimensional semiconductor material flexible device cannot bear large strain and cannot work stably under the strain condition is effectively solved.