60results about How to "Good light response" patented technology

The invention relates to a flower-like structured CuS material as well as a preparation method and application thereof. The preparation method comprises the following steps: mixing a cupric compound and a solvent, and sufficiently stirring the components at certain temperature so as to obtain a homogeneous solution; under acute stirring, slowly adding a sulfur-containing compound into the homogeneous solution, and performing temperature-keeping treatment; transferring the solution into a hydrothermal reaction kettle, and performing a sealed heating reaction at certain temperature, performing cooling till the room temperature, performing filtration and collection, washing the product, performing filtration again, performing vacuum drying, and grinding the product, thereby obtaining a black product, that is, the flower-like structured CuS material. The flower-like structured CuS material can be applied to photocatalytic degradation dye wastewater. Compared with the prior art, the flower-like structured CuS material is wide in visible light response range of CuS, and high in visible light utilization rate.

The invention discloses an ultraviolet detector. A gallium oxide / zinc oxide based core shell nano-rod structure layer is arranged between a quartz substrate and a transparent contact electrode of the detector, wherein the contact electrode is an ITO conductive thin film which is deposited on a glass substrate and is provided with a 0.2cm channel; the gallium oxide / zinc oxide based core shell nano-rod structure layer is composed of a ZnO nano-array seed layer and a beta-Ga2O3 layer which grows on the surface of the ZnO nano-array seed layer, the beta-Ga2O3 layer is composed of a nano beta-Ga2O3 crystal with a spherical shape, and the average size of the nano beta-Ga2O3 crystal is 30nm. The core shell nano-rod structure layer can be used for preparing a beta-Ga2O3 / ZnO core shell nano-rod structure through the steps of taking the ZnO nano-array as a carrier, adopting gallium nitrate and hexamethylenetetramine as materials, firstly growing a GaOOH precursor on the surface of ZnO by using a low-temperature water solution, and then implementing high-temperature heating. The preparation method disclosed by the invention is simple in process and low in reaction temperature; and in addition, prepared products have very good photoresponse to the ultraviolet light.

The invention discloses an air purifying photocatalyst. Anatase type titanium dioxide acts as a base body of the catalyst, and sulfur and lanthanum act as doped components, wherein the mole ratio of sulfur to lanthanum to titanium dioxide is (0.1-2) to (0.001-0.015) to 1, and the catalyst exists in a form of powder. The preparation process of the catalyst comprises the following steps of feeding the titanium source, the sulfur source and the lanthanum source according to a certain ratio, adding a dispersing agent and an inhibitor, hydrolyzing at the temperature of 10-80 DEG C with the pH of 2-7 so as to generate gel, drying at constant temperature in a drying oven, putting into a muffle furnace, firing and the like. The prepared anatase type sulfur and lanthanum codoped nano titanium dioxide powder is uniform in particle size, is controllable in particle size, is good in dispersibility, has a good catalytic degradation and purification effect on harmful gases, such as formaldehyde in an air environment, and meanwhile has a good antibacterial property.

The invention is a self-cross-linked polyvinyl butyral (PVB) binder for organic photoconductors (OPC's) used in electrophotography. The no cross-linked form of the binder is available from Monsanto Co. in the U.S.A. a Butvar TM , and from Sekisui Chemical Co. in Japan as Slek TM . I discovered that the PVB may be self-cross-linked by subjecting it to a thermal cure at between about 150 DEG -300 DEG C. for about 2 hours. I think other ways of cross-linking, for example, e-beam, UV or X-ray radiation, will achieve results similar to those I obtained with heat. No cross-linker, nor cross-linkable copolymer nor catalyst is required to accomplish the cross-linking. After self-cross-linking, the PV has good mechanical durability and good anti-solvent characteristics. In addition, he self-cross-linked PVB's glass transition temperature (Tg) increases from about 65 DEG C. to about 170 DEG C. Also, when conventional photoconductor pigments are dispersed in the self-cross-linked PVB, they are well dispersed, and the resulting OPC's have good charge acceptance, low dark decay, and, in general, good photodischarge characteristics. Also, OPC's with the self-cross-linked PVB exhibited improved adhesion, so multi-layered OPC's made according to this invention will hav improved inter-layer bonding and longer economic lives.

The invention discloses a nanometer layered horizontal homogeneous PN diode and fabrication method and application thereof. A p-type transition metal chalcogenide film and an n-type transition metal chalcogenide film both are arranged on an upper surface of a dielectric layer and are transversely connected, an electrode layer is longitudinally connected or transversely connected with the p-type transition metal chalcogenide film and the n-type transition metal chalcogenide film, and the p-type transition metal chalcogenide film and the n-type transition metal chalcogenide film comprises the same transition metal chalcogenide. The fabrication method is simple, high-efficiency and low-damage p-type doping of the transition metal chalcogenide is achieved through oxygen plasma by magnetron sputtering, effective and controllable doping is achieved, and the obtained diode is used for a photoelectric detector and has more rapid optical response and higher detection rate.

The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well / P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.

The invention belongs to the technical field of semiconductor photodetection, and particularly relates to a self-powered photodetector based on Cs3Cu2I5 perovskite and a preparation method thereof. The self-powered photodetector includes an insulating transparent substrate, the upper end of the substrate is provided with a carrier transport layer, a Cs3Cu2I5 light absorption layer and a first contact electrode sequentially from bottom to top, and a second contact electrode is arranged on the carrier transport layer. According to the preparation method, the carrier transport layer is prepared by adopting a magnetron sputtering or metal organic chemical vapor deposition method, the Cs3Cu2I5 light absorption layer is prepared by adopting a solution or vapor phase co-evaporation method, staggered energy band arrangement is ensured to be formed between the carrier transport layer and the Cs3Cu2I5 light absorption layer, the formation of a built-in electric field at the interface of a heterojunction is used to enable photogenerated carriers to be separated, and the detector can thus work under zero volt. The preparation method is simple, each functional layer is environment-friendly, theprepared device has a high detection rate for ultraviolet light, the ultraviolet-visible light suppression ratio exceeds 10 of the fourth power, and the application prospect is good.

The invention discloses a self-driven heterojunction infrared photodetector based on a two-dimensional palladium diselenide nano-film and germanium and a preparation method thereof. The two-dimensional palladium diselenide nano-film is deposited on the surface of a germanium substrate; metal electrodes in ohmic contact with the two-dimensional palladium diselenide nano-film and the germanium substrate are arranged on the two-dimensional palladium diselenide nano-film and the germanium substrate; the palladium diselenide and the germanium form a heterojunction, and the two metal electrodes serve as two output stages, so that the self-driven heterojunction infrared photodetector is constructed. The self-driven heterojunction infrared photodetector disclosed by the invention has simple preparation process, which realizes a wide response wave band, high responsivity, high detection rate and fast response speed at room temperature, and provides a way for designing a high-performance wide-band infrared detector.

The invention relates to a surface photocatalytic modification method for an inorganic membrane, particularly a surface photocatalytic modification method for a water treatment inorganic membrane, which aims to solve the problem that the existing inorganic membrane can be easily influenced by the membrane pollution, can be easily blocked at the membrane pores and does not have the photocatalytic property. The method comprises the following steps: 1. putting the inorganic membrane in a reaction chamber, and preheating the inorganic membrane and reaction chamber body; and sequentially carrying out Ti source deposition, O source deposition, Ti source deposition, N source doping deposition, Zn source deposition, O source deposition, Zn source deposition and N source doping on the surface of the pretreated inorganic membrane to perform multiple-atomic-layer deposition, thereby obtaining the photocatalytic modified inorganic membrane for water treatment. The atomic layer deposition process is utilized to form the nitrogen-doped multicomponent composite photocatalytic deposition membrane. The inorganic membrane has favorable membrane pollution resistance, and the removal rate of methylene blue organic dyes by photocatalytic degradation is up to 95%.

The invention discloses an ultraviolet photoresponse device based on a homogeneous ZnO nano core shell array. The homogeneous ZnO nano core shell array layer is arranged between a glass substrate and a transparent contact electrode. The transparent contact electrode is ITO conductive glass engraved with a 0.2cm channel. The ZnO nano core shell array is composed of a ZnO nano array seed layer, a ZnO nanorod array core layer growing on the surface of the ZnO nano array seed layer and a ZnO nano flake shell layer growing on the nanorod surface. The structure layer uses the ZnO nano array as a carrier, zinc acetate and hexamethylenetetramine are adopted as raw materials, a low-temperature aqueous solution is firstly adopted to grow the ZnO nanorod array on the ZnO surface, and low-temperature ethanol solvothermal is then adopted to grow the ZnO nano flake layer structure on the nanorod array. The manufacturing method is simple, the reaction temperature is low, and the manufactured product has excellent photoresponse to ultraviolet light.

The invention discloses a bismuth-based perovskite material and a preparation method thereof. The chemical formula of the material is (C12H14N2) BiX5, wherein C12H14N2 represents a positive bivalent methyl viologen cation, and X represents any one or more of Cl, Br and I. The material is prepared by carrying out solvothermal reaction in a methanol solution by taking a bismuth source and haloid acid as raw materials and 4, 4'-dipyridyl or methyl viologen as a structure directing agent. The preparation method disclosed by the invention is simple and convenient to operate and good in repeatability, the photoelectric property of the material can be effectively regulated and controlled by changing halogen, and meanwhile, the metal element bismuth is used for replacing a toxic element lead, so that harm to a human body and pollution to the environment are reduced. The material disclosed by the invention is good in wet and thermal stability, excellent in photoelectric property and good in semiconductor property, and has a wide application prospect in the fields of solar cells, photoelectric materials, photoelectric detection, photo-catalysis / photo-electro-catalysis and the like.

The invention relates to the technical field of gas sensor production, in particular to a production method of a NO2 photoelectric gas-sensitive sensor. The production method includes the steps of firstly, producing a ZnO seed layer; secondly, growing a ZnO nano wall; thirdly, aging to obtain the NO2 photoelectric gas-sensitive sensor. The produced NO2 photoelectric gas-sensitive sensor has the advantages that the sensor can detect the ppb level, and the gas sensitivity of the sensor to 5ppb NO2 is 7.482; the sensor is high in sensitivity, the photo-sensitivity of the sensor to light with the wavelength being 365nm under room temperature is 6.16, and the sensitivity of the sensor to 50ppm NO2 is 57.5; the sensor is good in stability and easy in material obtaining and has the coupling property of photo-sensitivity and gas sensitivity.

The invention discloses a heterojunction type near-infrared photoelectric detector based on a two-dimensional platinum diselenide nano film and a cadmium telluride crystal, and a preparation method thereof. The two-dimensional platinum diselenide nano film is tiled on the surface of the cadmium telluride crystal, metal electrodes in ohmic contact with the two-dimensional platinum diselenide nanofilm and the cadmium telluride crystal are respectively arranged on the two-dimensional platinum diselenide nano film and the cadmium telluride crystal, cadmium telluride and platinum diselenide forma heterojunction, and the two metal electrodes are used as two output stages, that is, constructed as the heterojunction type near-infrared photoelectric detector. The heterojunction type near-infrared photoelectric detector disclosed by the invention has a simple preparation process, achieves a wide response band, high responsivity, a high detection rate and a high response speed at the room temperature, and provides a way for the design of high-performance infrared detectors.

The invention discloses a II-type heterojunction near-infrared photoelectric detector based on a two-dimensional molybdenum disulfide nano film and a cadmium telluride crystal, and a preparation method thereof. The two-dimensional molybdenum disulfide nano film is tiled on the surface of the cadmium telluride crystal, metal electrodes in ohmic contact with the two-dimensional molybdenum disulfidenano film and the cadmium telluride crystal are respectively arranged on the two-dimensional molybdenum disulfide nano film and the cadmium telluride crystal, cadmium telluride and molybdenum disulfide form a II-type heterojunction, and the two metal electrodes are used as two output stages, that is, constructed as the heterojunction near-infrared photoelectric detector. The near-infrared photoelectric detector disclosed by the invention has a simple preparation process, achieves high responsivity, a high detection rate and a high response speed at the room temperature, and provides a way forthe design of high-performance wide-band infrared detectors.

The invention discloses a preparation method of a composite structured GaN / CdZnTe thin film ultraviolet light detector. The preparation method comprises the steps of (1) grinding commercial CdZnTe polycrystal into powder to be used as a sublimation source; (2) taking a monocrystal silicon wafer plated with gallium nitride (GaN) as a substrate, performing blow-drying by nitrogen, and putting into a near space sublimation reaction chamber; (3) pumping air in the sublimation chamber to make the air pressure be 5pa and even below, starting a halogen lamp to heat the sublimation source and the substrate to be 600 DEG C and 550 DEG C; performing growth for 20min, cooling to the room temperature and taking out to obtain a GaN / CdZnTe thin film; and (4) performing metal electrode evaporation on the surface of the GaN / CdZnTe thin film by an evaporation method, then putting the metal electrode into N<2> atmosphere to be annealed to form high ohmic contact between GaN / CdZnTe and the metal electrode, to obtain the composite structured GaN / CdZnTe thin film ultraviolet light detector. By virtue of the GaN substrate adopted in the manufacturing method, it is ensured that the composite structured GaN / CdZnTe thin film ultraviolet light detector can be used in a high-temperature and strong-radiation environment and the detector has high stability and optical response characteristics on ultraviolet light.

The invention discloses a homojunction photodiode and triode based on methylamine lead bromide single crystal and a preparation method thereof. An MAPbBr<3> single crystal becomes an n-type semiconductor by doping BiBr<3>, an undoped MAPbBr<3> single crystal is a weak p-type semiconductor, n-type and p-type MAPbBr<3> single crystals form a homojunction, and then a p-n homojunction photodiode and an n-p-n homojunction phototriode are constructed. The detector provided by the invention is simple in preparation process and good in device performance, and opens up a new prospect for the application of the hybrid perovskite single crystal material in a photoelectric detector.

The invention relates to the technical field of building material coatings, and particularly discloses a negative ion environment-friendly coating and a preparation method thereof. The negative ion environment-friendly coating is prepared from, by weight, 40-70 parts of water-borne epoxy resin, 5-15 parts of a mixed cross-linking agent, 5-20 parts of negative ion powder, 5-10 parts of a bismuth-based activated carbon photocatalyst, 1-4 parts of a dispersing agent and 50-100 parts of water. The preparation method comprises the following steps: uniformly mixing the negative ion powder, the bismuth-based activated carbon photocatalyst and water to obtain a suspension; adding a mixed cross-linking agent into the suspension, reacting at 65-75 DEG C for 5-8 hours, and filtering to obtain a bismuth-based negative ion-activated carbon composite material; and then adding the bismuth-based negative ion-activated carbon composite material and a dispersing agent into water-borne epoxy resin, and uniformly mixing to obtain the negative ion environment-friendly coating. The negative ion environment-friendly coating disclosed by the invention not only has the effects of releasing negative oxygen ions and preventing corrosion, but also can continuously adsorb and decompose free formaldehyde in air, so that the air purification effect of the coating is improved.

The invention discloses an application of a two-dimensional palladium selenide nano film for detection of broadband polarized light signals. The application is characterized in that the two-dimensional palladium selenide nano film is taken as a light sensitive layer to make a polarization-sensitive photoelectric detector, and detection of the broadband polarized light signals is realized. The application is advantaged in that the polarization-sensitive photoelectric detector made based on the two-dimensional palladium selenide nano film has significant response to the polarized light signals,and thereby accurate and stable detection of the wavelength-covered ultraviolet, visible and infrared polarized light signals in the complex electromagnetic environment can be performed.

The invention discloses a hydrogel system for capture and fixed-point release of circulating tumor cells. The hydrogel system is characterized by being prepared by the following method: 1) preparing a Ti3C2Tx two-dimensional material; (2) preparing Ti3C2Tx single-layer nanosheet suspension liquid by utilizing a Ti3C2Tx two-dimensional material; and 3) preparing a hydrogel film from the Ti3C2Tx single-layer nanosheet suspension and gelatin, performing surface carboxylation modification on the hydrogel film, and coupling an EpCAM antibody to obtain the hydrogel system. The hydrogel system provided by the invention has good photoresponse, thermal stability and cell adhesion, and specific capture of circulating tumor cells can be realized by modifying the surface of a hydrogel film with a coupling antibody; and the hydrogel system disclosed by the invention can be rapidly heated under the irradiation of laser with a specific wavelength, so that fixed-point release of circulating tumor cells can be realized.

The invention discloses a flash memory based on halogen perovskite material and a preparation method thereof, wherein the flash memory comprises a rigid base electrode, a dielectric layer, a halogen perovskite layer, a polymer layer, a semiconductor layer and a metal thin film top electrode arranged in order from bottom to top, and the halogen perovskite layer is made of one or more of methylaminelead iodide salt, methylamine lead bromide salt, formamidine lead iodide salt and formamidine lead bromide salt. The halogen perovskite layer and the polymer layer are used as floating gate layers ofthe flash memory, so that the flash memory based on the halogen perovskite material has excellent light response and light control characteristics. At the same time, the polymer layer spin-coated onthe halogen perovskite layer can protect the halogen perovskite material and improve the stability of the device. Thus, the flash memory based on the halogen perovskite material of the present invention not only provides an efficient cumulative optical record programmable function and an electric erasing mode process, but also has a precise and stable light adjustable performance.

The invention discloses a room temperature wide spectrum photoelectric detector based on a two-dimensional cobalt selenide thin film and a preparation method. A cobalt film with certain thickness is grown by sputtering on a substrate using dual-ion-beam sputtering technology; and on the basis, with cobalt selenide power and selenium powder being reaction source and argon as carrier gas, the cobaltselenide thin film is prepared using chemical vapor deposition method. Metal electrodes in ohmic contact with the cobalt selenide thin film are arranged on the cobalt selenide thin film as a source electrode and a drain electrode, and the photoelectric detector based on the two-dimensional cobalt selenide thin film is constituted. The obtained photoelectric detector based on the two-dimensional cobalt selenide thin film can realize an initial wide spectrum response waveband of 450 nanometer to 10.6 micrometer laser under room temperature, and the response rate reaches 2.58 watt / ampere. According to the provided room temperature wide spectrum photoelectric detector based on novel high-performance two-dimensional materials, the application of two-dimensional cobalt selenide materials is widened in the fields photoelectricity and magnetic-optical technology.

The invention relates to the technical field of preparation methods of light-sensitive detectors and in particular relates to a ZnO nanowall RGO heterojunction photoelectric gas sensor and a preparation method thereof. The preparation method comprises the following steps: 1) preparing porous reduced graphene; 2) growing a ZnO seed layer in situ on the surface of RGO; 3) growing a ZnO nanowall in situ on the surface of RGO; and 4) ageing, so that the finished product is obtained. By realizing the technical scheme, the problems in the prior art that photosensitivity and NO2 sensitivity are low under the normal temperature condition are solved.

The invention belongs to the technical field of environmental engineering, and provides a preparation method and application of a photocatalytic material for efficiently degrading tetrabromobisphenol A by visible light. C-coated ZnC, Bpn and g-C3N4 are used as precursors, and the g-C3N4 / C-coated ZnC / Bpn (CZB) ternary heterojunction photocatalytic material is constructed through a high-temperature calcination method. C-coated ZnC and Bpn are introduced into g-C3N4 containing N defects to construct a ternary heterojunction, so that the spectrum utilization rate and the conductivity can be improved, a band gap structure can be optimized, and relatively strong oxidation-reduction capability is generated. The migration capability of photon-generated carriers on the CZB is also enhanced, so that the recombination rate of the CZB is inhibited, and the photocatalytic degradation performance is improved. Under the visible light condition, the degradation rate of the prepared heterojunction material on TBBPA can reach 96% or above within 50 min. The ternary heterojunction photocatalyst is simple in preparation method, wide in raw material source, low in price and easy for large-scale production.

The invention relates to ultra-small-size copper sulfide nano-particles as well as a preparation method and application of the ultra-small-size copper sulfide nano-particles. The copper sulfide nanoparticles are synthesized by adopting the copper ion-doped carbon quantum dots, and the synthesized copper ion-doped carbon quantum dots have more excellent photoresponse and electron transmission effects. The prepared ultra-small-size copper sulphide nano-particles overcome the obstruction of extremely poor water solubility in application of copper sulphide nano-materials, and can show good solubility and long-term stability when water is used as a solvent. The water-soluble stable ultra-small-size copper sulphide nanoparticles prepared by the preparation method disclosed by the invention show an excellent photothermal conversion effect under the irradiation of near-infrared laser, the preparation process is simple and rapid, and the requirements on instruments and equipment are relatively low.

The invention provides a transistor device with a stretchable field effect. The device comprises a stretchable flexible substrate, a deposited metal gate electrode, a two-dimensional insulating material and / or a flexible dielectric layer, a two-dimensional semiconductor material grown on the flexible substrate, and a source-drain metal electrode. The invention also provides a preparation method and application of the device. The manufacturing method of the device is improved, the flexible substrate of the device to be manufactured is pre-stretched and fixed, and then the two-dimensional semiconductor material is directly transferred on the stretched substrate to manufacture the device. The two-dimensional semiconductor material such as molybdenum disulfide is used as a channel material of the device, and the two-dimensional insulating material such as boron nitride is used as a dielectric layer of the device. After the device is manufactured, the substrate is released, the material on the substrate is shrunk, and the stretchable device of the wrinkle structure is formed. The stable field effect transistor three-terminal device is successfully prepared and can be applied to logic circuits, photoelectric detection and nerve synaptic morphological devices. The problem that a two-dimensional semiconductor material flexible device cannot bear large strain and cannot work stably under the strain condition is effectively solved.

The application relates to the field of building material coating technology, and specifically discloses an anion-friendly environmental protection coating and a preparation method thereof. Negative ion environmental protection paint is made of raw materials including the following parts by weight: 40-70 parts of water-based epoxy resin, 5-15 parts of mixed crosslinking agent, 5-20 parts of negative ion powder, 5-10 parts of bismuth-based activated carbon photocatalyst, dispersant 1-4 parts, 50-100 parts of water; the preparation method is: first mix the anion powder, bismuth-based activated carbon photocatalyst and water uniformly to obtain a suspension; then add the mixed cross-linking agent to the suspension, At 75°C, react for 5-8 hours, and filter to obtain a bismuth-based-anion-activated carbon composite material; then add bismuth-based-anion-activated carbon composite material and dispersant to the water-based epoxy resin, and mix well to obtain an anion-friendly environmental coating . The negative ion environmental protection paint of the present application not only has the effect of releasing negative oxygen ions and preventing corrosion, but also can continuously absorb and decompose free formaldehyde in the air, thereby improving the air purification effect of the paint.

The invention discloses a heterojunction structure and a photoelectric detector based on platinum diselenide and silicon, and a preparation method of the heterojunction structure and the photoelectric detector, according to the heterojunction structure and the photoelectric detector, a thin insulating layer exists between a PtSe2 layer and a Si layer, and the insulating layer serves as a charge blocking layer or a tunneling layer and can regulate and control the charge transport characteristic. In order to further improve the characteristics of the photoelectric detector, the invention also discloses a method for preparing a metal nanoparticle layer on the platinum diselenide layer of the heterojunction structure so as to form a metal nanoparticle / platinum diselenide / insulating layer / silicon heterojunction structure. The preparation method of the heterojunction and the photoelectric detector thereof is simple, low in cost, compatible with a silicon process and low in preparation cost. The photoelectric detector formed by the heterojunction structure has the excellent characteristics of zero bias voltage driving, high response rate, high detection rate, high switch ratio, low dark current, high stability, wide spectral response and the like, and paves a way for a new generation of silicon-based photoelectric detectors.