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2results about How to "Good light response" patented technology

An integrated hyperlens infrared detector prototype device, method of manufacture and apparatus

This invention provides a prototype infrared detector with integrated metalens, its fabrication method, and an optoelectronic instrument. The prototype infrared detector with integrated metalens, its fabrication method, and the optoelectronic instrument of this invention offer an effective and feasible solution for the industrialization of infrared detectors with integrated metalens, and are beneficial to the development of optoelectronic devices. The prototype infrared detector with integrated metalens of this invention has the advantages of miniaturization and high performance, and is expected to be widely used in scenarios such as integrated miniaturized infrared detection and infrared detection in low-light environments.
Owner:INSTITUTE OF PHYSICS CHINESE ACADEMY OF SCIENCES

A lead selenide room temperature mid-wave infrared detector and a preparation method and application thereof

ActiveCN120547958Bquality improvementgood light response
The application discloses a preparation method of a lead selenide room-temperature mid-wave infrared detector, which comprises the following steps: (1) adopting a magnetron sputtering technology, and depositing a lead selenide film layer on a substrate by using oxygen as a reaction gas; (2) placing the lead selenide film in a horizontal tube furnace to realize high-temperature oxidation in pure oxygen at normal pressure; and (3) placing the lead selenide film in a vertical tube furnace to realize high-temperature iodization in an environment at normal pressure. The lead selenide film is prepared by the magnetron sputtering technology, compared with chemical bath deposition, the film quality is effectively improved, large-area and high-uniformity film preparation is realized, the magnetron sputtering film is subjected to high-temperature "oxidation-iodization" treatment, the magnetron sputtering film has excellent light response to infrared light, the sensitization technology is specific, clear and good in repeatability, the sensitized lead selenide film layer and a top electrode are combined to form a photoconductive type detector, and the device has a room-temperature device specific detectivity of 7.6*10 9 Jones@4.3 mu m, and excellent performance.
Owner:HUAZHONG UNIV OF SCI & TECH