II-type heterojunction near-infrared photoelectric detector based on two-dimensional molybdenum disulfide nano film and cadmium telluride crystal, and preparation method thereof

A technology of molybdenum disulfide and nano-film, applied in the field of photoelectric detection, can solve the problems of low incident light absorption rate, low specific detection rate, small current on/off ratio, etc., and achieve simple process, high specific detection rate and fast detection speed effect
CN109449243AInactive Publication Date: 2019-03-08ZHENGZHOU UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ZHENGZHOU UNIV
Publication Date
2019-03-08
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a II-type heterojunction near-infrared photoelectric detector based on a two-dimensional molybdenum disulfide nano film and a cadmium telluride crystal, and a preparation method thereof. The two-dimensional molybdenum disulfide nano film is tiled on the surface of the cadmium telluride crystal, metal electrodes in ohmic contact with the two-dimensional molybdenum disulfidenano film and the cadmium telluride crystal are respectively arranged on the two-dimensional molybdenum disulfide nano film and the cadmium telluride crystal, cadmium telluride and molybdenum disulfide form a II-type heterojunction, and the two metal electrodes are used as two output stages, that is, constructed as the heterojunction near-infrared photoelectric detector. The near-infrared photoelectric detector disclosed by the invention has a simple preparation process, achieves high responsivity, a high detection rate and a high response speed at the room temperature, and provides a way forthe design of high-performance wide-band infrared detectors.
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Description

technical field

[0001] The invention relates to a type II heterojunction near-infrared photodetector constructed by a two-dimensional molybdenum disulfide nano film and a cadmium telluride crystal and a preparation method thereof, belonging to the technical field of photoelectric detection. Background technique

[0002] In recent years, many researchers have devoted themselves to the development of new high-performance infrared photodetectors due to their great value in defense and military applications, industrial automation, environmental monitoring, and biomedicine. At present, most commercial infrared photodetectors are generally made of certain narrow-bandgap semiconductors such as InGaAs, HgCdTe, etc. However, the application of these infrared photodetectors is limited by their complex fabrication process, high cost, and low-temperature operating conditions. Since the discovery of the unique optoelectronic properties of graphene, two-dimensional layered materials have...

Claims

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