Preparation method of composite structured GaN/CdZnTe thin film ultraviolet light detector

Abstract

The invention discloses a preparation method of a composite structured GaN / CdZnTe thin film ultraviolet light detector. The preparation method comprises the steps of (1) grinding commercial CdZnTe polycrystal into powder to be used as a sublimation source; (2) taking a monocrystal silicon wafer plated with gallium nitride (GaN) as a substrate, performing blow-drying by nitrogen, and putting into a near space sublimation reaction chamber; (3) pumping air in the sublimation chamber to make the air pressure be 5pa and even below, starting a halogen lamp to heat the sublimation source and the substrate to be 600 DEG C and 550 DEG C; performing growth for 20min, cooling to the room temperature and taking out to obtain a GaN / CdZnTe thin film; and (4) performing metal electrode evaporation on the surface of the GaN / CdZnTe thin film by an evaporation method, then putting the metal electrode into N<2> atmosphere to be annealed to form high ohmic contact between GaN / CdZnTe and the metal electrode, to obtain the composite structured GaN / CdZnTe thin film ultraviolet light detector. By virtue of the GaN substrate adopted in the manufacturing method, it is ensured that the composite structured GaN / CdZnTe thin film ultraviolet light detector can be used in a high-temperature and strong-radiation environment and the detector has high stability and optical response characteristics on ultraviolet light.

Description

Technical field [0001] The invention relates to a method for preparing a GaN / CdZnTe thin film ultraviolet light detector with a composite structure, and belongs to the technical field of inorganic non-metallic material manufacturing technology. Background technique [0002] Ultraviolet detection technology is a new dual-purpose photoelectric detection technology after infrared and laser detection technology. At present, most high-sensitivity ultraviolet light detection uses vacuum photomultiplier tubes that are sensitive to ultraviolet light and similar vacuum-type devices. However, compared with solid-state detection devices, vacuum-type devices have the disadvantages of large volume and high working voltage; for example, silicon photodetection devices are responsive to visible light, and this feature becomes a disadvantage in ultraviolet light detection. At this time, it is required to detect only the ultraviolet signal, which requires expensive pre-filtering facilities. With...

AI Technical Summary

Problems solved by technology

However, traditional Si, GaAs and other materials are used as substrates, and the normal use of ultraviolet light detectors under high temperature and strong radiation conditions cannot be guaranteed due to the too small bandgap.

Images