ZnO nanowall RGO heterojunction photoelectric gas sensor and preparation method thereof

A gas sensor, nano wall technology, applied in the direction of material resistance, can solve the problem of low sensitivity, and achieve the effect of high light sensitivity, good stability and good electrical conductivity

Active Publication Date: 2017-07-07
XIAN TECHNOLOGICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The object of the present invention is to provide a kind of ZnO nano wall RGO heterojunction photoelectric sensitive sensor and preparation method thereof, to overcome photosensitivity and NO under normal temperature condition in the prior art 2 The problem of low sensitivity

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  • ZnO nanowall RGO heterojunction photoelectric gas sensor and preparation method thereof
  • ZnO nanowall RGO heterojunction photoelectric gas sensor and preparation method thereof
  • ZnO nanowall RGO heterojunction photoelectric gas sensor and preparation method thereof

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Embodiment 1

[0044] Embodiment one: a kind of preparation method of ZnO nano wall RGO heterojunction photoelectric sensitive sensor, comprises the following steps:

[0045] 1. Preparation of porous reduced graphene

[0046] Weigh 2mg of porous graphene powder (Nanjing Jicang Nano Technology Co., Ltd.), mix it with 10ml of DMF (N,N-dimethylformamide), and prepare a concentration of 0.2mg / ml porous graphene-DMF (N, N-dimethylformamide) suspension, then seal the above suspension with multi-layer plastic wrap, discontinuous ultrasonic treatment at room temperature for 72h, to obtain a porous graphene dispersion, leave it for 24h, and pass through at a speed of Centrifuge at 4000r / min, then absorb the upper layer liquid into a clean glass bottle, the porous graphene dispersion; ultrasonically clean the Ag interdigitated electrodes in acetone, absolute ethanol, and deionized water respectively, and put them in at a temperature of 110 Preheat treatment in a drying oven at ℃ for 1h; take 1ml of t...

Embodiment 2

[0057] A preparation method of ZnO nano-wall RGO heterojunction photoelectric sensitive sensor, comprising the following steps:

[0058] 1. Preparation of porous reduced graphene

[0059] Weigh 4mg of porous graphene powder (Nanjing Jicang Nano Technology Co., Ltd.), mix it with 10ml of DMF (N,N-dimethylformamide), and prepare a concentration of 0.4mg / ml porous graphene-DMF (N, N-dimethylformamide) suspension, then seal the above suspension with multi-layer plastic wrap, discontinuous ultrasonic treatment at room temperature for 72h, to obtain a porous graphene dispersion, leave it for 24h, and pass through at a speed of Centrifuge at 4000r / min, and then absorb the upper layer liquid into a clean glass bottle to form a porous graphene dispersion; ultrasonically clean the Ag interdigitated electrodes in acetone, absolute ethanol, and deionized water respectively, and place them at a temperature of 110°C Preheat treatment in a drying oven for 1h; take 1ml of the configured poro...

Embodiment 3

[0070] A preparation method of ZnO nano-wall RGO heterojunction photoelectric sensitive sensor, comprising the following steps:

[0071] 1. Preparation of porous reduced graphene

[0072] Weigh 6mg of porous graphene powder (Nanjing Jicang Nano Technology Co., Ltd.), mix it with 10ml of DMF (N,N-dimethylformamide), and prepare a concentration of 0.6mg / ml porous graphene-DMF (N, N-dimethylformamide) suspension, then seal the above suspension with multi-layer plastic wrap, discontinuous ultrasonic treatment at room temperature for 72h, to obtain a porous graphene dispersion, leave it for 24h, and pass through at a speed of Centrifuge at 4000r / min, and then absorb the upper layer liquid into a clean glass bottle to form a porous graphene dispersion; ultrasonically clean the Ag interdigitated electrodes in acetone, absolute ethanol, and deionized water respectively, and place them at a temperature of 110°C Preheat treatment in a drying oven for 1h; take 1ml of the configured poro...

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Abstract

The invention relates to the technical field of preparation methods of light-sensitive detectors and in particular relates to a ZnO nanowall RGO heterojunction photoelectric gas sensor and a preparation method thereof. The preparation method comprises the following steps: 1) preparing porous reduced graphene; 2) growing a ZnO seed layer in situ on the surface of RGO; 3) growing a ZnO nanowall in situ on the surface of RGO; and 4) ageing, so that the finished product is obtained. By realizing the technical scheme, the problems in the prior art that photosensitivity and NO2 sensitivity are low under the normal temperature condition are solved.

Description

[0001] 1. Technical field [0002] The invention relates to the technical field of preparation methods of photosensitive detectors, in particular to a ZnO nano-wall RGO heterojunction photoelectric sensitive sensor and a preparation method thereof. [0003] 2. Background technology: [0004] The metal oxide semiconductor material ZnO has a band gap of 3.37eV at room temperature, which is a direct band gap semiconductor, and its exciton binding energy is very large, about 60meV. After being excited by violet light, photogenerated electron-hole pairs are generated, and the conductance increases; at the same time, photogenerated electrons or holes are induced to the semiconductor surface to undergo oxidation-reduction reactions with adsorbed gas molecules, and the conductance will also change during this process. Therefore, this has laid a good foundation for the application of ZnO in photosensitive detectors and photoelectric sensitive sensors. [1,3] ! [0005] However, the cur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/04
CPCG01N27/04
Inventor 于灵敏郭芬刘宗媛李春马海宁袁雄范新会
Owner XIAN TECHNOLOGICAL UNIV
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