The application relates to the technical field of
semiconductor photoelectric devices, and particularly relates to a
nanocrystal detection
chip capable of perceiving multi-spectrum (covering 300 nm-15 mu m). By adopting a solution
processing type
nanocrystal thin film, rigid dependence on expensive
single crystal infrared epitaxial wafers such as
indium gallium arsenide (InGaAs) and
indium antimony arsenide (InAsSb) of a traditional
infrared detector is effectively broken, a patterned
nanocrystal filter layer is prepared on an independent transparent optical substrate, a multi-band spectral modulation array is constructed through multiple photoetchings, and high-precision vertical
heterojunction integration is realized with a bottom photoreceptive pixel. By utilizing the band tunable characteristics of nanocrystal materials, the physical
band gap limitation of a traditional
silicon-based sensor is broken, and full-spectrum photoelectric detection response from
ultraviolet, visible light to medium-
long wave infrared (300 nm-15 mu m) is realized. The application forms an in-situ
physical barrier through a vertical
heterojunction integration structure, and at the same time of completing micron-level spectral spectral modulation, reliable physical isolation and
chemical protection are provided for the fragile nanocrystal
active layer.