Solar cell of high efficiency and process for preparation of the same
A solar cell, conductive technology, applied in and a field
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Embodiment 1
[0038] A phosphorus-doped n-type emitter layer is formed on a boron-doped p-type silicon substrate to form a p-n junction. Deposit silicon oxynitride (SiO) as a passivation layer with a thickness of 30 nm on the n-type emitter layer by PECVD x N y). Afterwards, by PECVD method, on the silicon oxynitride passivation layer, deposit the silicon nitride (SiN) with the refractive index of 1.9 as the anti-reflection layer. x ). Next, an aluminum-containing paste was screen-printed on the p-type silicon substrate and a silver-containing paste was screen-printed on the silicon nitride layer, thereby forming a pattern. The resulting structure was baked at about 800° C. for about 30 seconds to simultaneously form a rear electrode connected to the p-type silicon substrate and a front electrode connected to the n-type emitter layer, thereby preparing a solar cell.
experiment Embodiment 1
[0044] In order to measure the efficiencies of the solar cells prepared in Example 1 and Comparative Examples 1 and 2, open circuit voltage (Voc) and short circuit current (Jsc) were measured, respectively. Afterwards, based on the measured Voc and Jsc values, fill factor (FF) and solar cell efficiency were measured. The obtained results are shown in Table 1. Here, fill factor (FF) is defined as (Vmp x Jmp) / (Voc x Jsc), where Jmp and Vmp represent current density and voltage at the maximum power point. Solar cell efficiency refers to Pmax / Pin, where Pmax represents the maximum power generated by the cell and power input, and Pin is defined as the incident light intensity entering the system, that is, the light energy supplied to the system per unit time.
[0045]
[0046] Example number
[0047] As can be seen from the results in Table 1, compared with the double-reflection film structure (comparative example 1) of the silicon dioxide passivation layer and the ant...
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