63 results about "Solar cell efficiency" patented technology

The invention is suitable for the technical field of solar cells, and provides a solar cell, a cell assembly and a photovoltaic system, the solar cell comprises a silicon wafer, the surface of which is provided with a P-type doped region; the first P-type doped layer is arranged in the P-type doped region, boron elements and second elements are doped in the first P-type doped layer, the second elements are one or more elements except the boron elements in the IIIA family elements, and the doping activation concentration of the second elements in the first P-type doped layer is larger than that of the boron elements. According to the solar cell provided by the invention, light-induced degradation can be reduced, the power generation power of the cell module is improved, the surface recombination loss can be reduced, the passivation effect is improved, and the efficiency of the solar cell is improved.

The invention discloses a method for improving the efficiency of a perovskite solar cell, and belongs to the technical field of solar cells. The insulating spacer film prepared between the electron transport layer and the perovskite layer of the perovskite solar cell by adopting the electron beam evaporation method has high uniformity, the cell interface structure can be optimized, defects are reduced, charge recombination loss is reduced, and the photoelectric conversion efficiency and stability are effectively improved. The insulating spacer layer not only can block external moisture and pollutants, reduce direct contact between the perovskite layer and the electron transport layer and prolong the service life of the cell, but also can inhibit internal ion migration and slow down performance degradation. By accurately regulating and controlling the thickness of the insulating spacer layer, charge transmission optimization and compound loss minimization are realized. An innovative technical path is provided for research and development of efficient and stable perovskite solar cells, and further development of the solar cell technology is expected to be promoted.

The invention relates to the field of solar cells, and provides a solar cell and a preparation method of the solar cell. The solar cell comprises a substrate, the substrate is provided with a first surface and a second surface which are opposite, and the second surface is provided with a groove; the first doped conductive layer is positioned on the first surface or the second surface on at least one side of the groove; the second doped conductive layer is at least partially located in the groove, and the doping type of the first doped conductive layer is different from that of the second doped conductive layer; the first electrode is positioned on one side, far away from the substrate, of the first doped conductive layer and is in contact with the first doped conductive layer; and the second electrode is at least partially positioned on one side, far away from the substrate, of the second doped conductive layer in the groove. The solar cell solves the technical problem of how to improve the efficiency of the solar cell in the prior art.

The invention provides a solar cell and a photovoltaic module, and belongs to the technical field of solar cells. The solar cell comprises a silicon substrate, the silicon substrate comprises two opposite surfaces, at least one surface is provided with a first texture structure, and the first texture structure is a non-pyramid texture structure and comprises a plurality of sunken parts which are sunken towards the interior of the silicon substrate; the convex parts are located between the adjacent concave parts, and at least part of the convex parts are provided with divergent broken line structures or curve structures in the direction from the convex parts to the concave parts. The first texture structure on the surface of the silicon substrate is beneficial to considering the light trapping effect when the silicon substrate is applied to a light receiving area, the electric contact performance of a non-light receiving area and the quality of a film layer located on the surface of the silicon substrate, so that the efficiency and the double-sided rate of the solar cell are improved.

The embodiment of the utility model provides a solar cell, a photovoltaic module and a photovoltaic system, the solar cell comprises a first surface and a second surface which are opposite to each other, and a side surface located between the first surface and the second surface, and the side surface is provided with a first area close to the first surface and a second area close to the second surface; a first tunneling oxide layer, a first doped polycrystalline silicon layer and a first antireflection layer are sequentially stacked on the first region; and a first intrinsic amorphous silicon layer, a first doped microcrystalline silicon layer and a second antireflection layer are sequentially laminated on the second region. According to the embodiment of the invention, the edge passivation can be enhanced, the efficiency of the solar cell is improved, the edge winding plating of the tunneling oxide layer and the doped polycrystalline silicon does not need to be removed, the etching process is reduced, and the production cost is reduced.

The present invention relates to a post-treatment method for preventing cell degradation, whereby the problem of reduced solar cell efficiency due to the thermal degradation of cells that inevitably occurs during the manufacturing process of perovskite-based solar cell modules can be prevented or minimized; and a perovskite-based solar cell post-treated by said method.

The invention discloses a four-end laminated solar cell based on ultra-wide-band-gap perovskite and a preparation method of the four-end laminated solar cell. The four-end laminated solar cell based on the ultra-wide-band-gap perovskite comprises a top cell and a bottom cell, wherein the top cell is an ultra-wide-band-gap perovskite solar cell of which the band gap is not less than 2.0 eV. According to the invention, the problem of low utilization rate of the bottom cell in the existing perovskite-based four-terminal laminated cell can be solved, and the overall photoelectric conversion efficiency of the solar cell can be synergistically improved. According to the invention, the band gap characteristic of the ultra-wide band gap perovskite solar cell is used, and high-energy photons are fully absorbed and utilized to generate high open-circuit voltage; meanwhile, the light absorption of the bottom cell can be enhanced, and the photoelectric conversion efficiency of the bottom cell is effectively exerted; in addition, the damage of ultraviolet rays to the performance of the bottom cell is avoided. Therefore, the efficiency and the stability of the solar cell can be synergistically improved, and the application prospect is good.

The invention belongs to the field of solar cell materials, and provides a compound shown in a formula I and capable of serving as a light conversion material, a light conversion adhesive film containing the compound shown in the formula I, a preparation method, a solar cell module and a method for enhancing efficiency and / or stability of a solar cell. The light conversion adhesive film containing the light conversion material can be used for solar cells (especially TOPCon cells and TBC cells) so as to enhance the efficiency and / or stability of the cells.

The present invention provides a solar cell and photovoltaic module. The solar cell comprises: an N-type substrate; an isolation structure located on a first surface; a doping structure; a first passivation layer; and a plurality of first electrodes. The doping structure comprises a first P-type doped emitter and a second P-type doped emitter, the second P-type doped emitter being located in a metal contact region; the isolation structure being located between two adjacent second P-type doped emitters, the isolation structure being used to isolate the first electrode from the N-type substrate; the first P-type doped emitter being located in a non-metallic contact region; the first passivation layer being located on a side of the doping structure in the non-metallic contact region away from the N-type substrate; and the first electrode being located on a side of the isolation structure away from the N-type substrate. Furthermore, the solar cell comprises a second tunneling dielectric layer, a second doped conductive layer, a second passivation layer, and a plurality of second electrodes located on a second surface. This solar cell solves the prior art technical problem of improving solar cell efficiency.

The invention belongs to the field of solar cell materials, and provides a light conversion material, application thereof, a light conversion adhesive film containing the light conversion material, a preparation method of the light conversion adhesive film, a solar cell module and a method for enhancing efficiency and / or stability of a solar cell. The light conversion material is a compound shown as a formula I, and the definition of each group in the compound shown as the formula I is described in the specification. The light conversion adhesive film containing the light conversion material can be used for a solar cell to enhance the efficiency and / or stability of the cell.

The invention provides a solar cell and a preparation method thereof, and the solar cell comprises an N-type substrate which comprises a first surface and a second surface which are opposite to each other, and the first surface is provided with a P-type region and an N-type region which are spaced from each other; the tunneling dielectric layer, the N-type doping layer, the first intrinsic amorphous silicon layer, the first P-type amorphous silicon layer, the first transparent conducting layer and the first electrode are located in the N-type area, the doping concentration of the N-type doping layer is larger than that of the tunneling dielectric layer, the doping type of the tunneling dielectric layer is the same as that of the N-type doping layer, and the first transparent conducting layer makes contact with the first electrode; the second intrinsic amorphous silicon layer, the second P-type amorphous silicon layer, the second transparent conducting layer and the second electrode are located in the P-type area, and the second electrode is in contact with the second transparent conducting layer and the second P-type amorphous silicon layer; and a passivation layer and an anti-reflection layer on the second surface. The solar cell solves the technical problem of how to improve the efficiency of the solar cell.

A system for stabilizing and / or improving an efficiency of a solar cell having a front-side front contact and a rear-side rear contact. The system includes: an illumination unit that is designed to locally illuminate the solar cell; a voltage source having two contacting apparatuses, wherein one contacting apparatus is designed to be connected to the front contact of the solar cell, and the other contacting apparatus is designed to be connected to the rear contact of the solar cell in such a way that a current flow is induced in the reverse direction of the solar cell. The system also includes a heating apparatus which is designed and configured to heat the solar cell during a current flow induced in the reverse direction.

The invention provides a wide-band-gap perovskite battery and a preparation method thereof. The wide-band-gap perovskite cell comprises a perovskite absorption layer, a dielectric passivation layer and a charge transport layer which are stacked in sequence. The perovskite absorption layer is doped with an organic amine salt, the chemical formula of the organic amine salt is nM-PAHs-RNH3X, n is 1-5, M is an electron withdrawing group, PAHs is aryl, R is C1-C4 alkyl or H, and X is any one selected from F, Cl, Br and I; the material of the dielectric passivation layer comprises a Lewis basic compound. Organic amine salt doping is combined with the Lewis alkaline dielectric passivation layer, so that perovskite energy level matching is optimized, interface defects are reduced, and the efficiency of the solar cell is remarkably improved; and meanwhile, a large number of dielectric layers do not need to be arranged to realize energy level matching, and the preparation process of the wide-band-gap perovskite cell is simplified.

The invention provides a solar cell sintering method and a solar cell obtained through the solar cell sintering method, and relates to the technical field of solar cells. The sintering method of the solar cell comprises the following steps of: printing P fine grid slurry on a cell piece, and sintering for the first time; printing N fine grid slurry, and sintering for the second time; and finally printing the main grid slurry, and performing third sintering to obtain the solar cell. According to the sintering method, a step-by-step sintering mode is adopted, the contact effect of metal of the P region, the N region and the main grid region and the silicon wafer is improved, and the efficiency and the process yield of the solar cell can be effectively improved.

The invention provides a solar cell and a photovoltaic module, the solar cell comprises an N-type substrate, an isolation structure located on a first surface, a doping structure, a first passivation layer and a plurality of first electrodes, the doping structure comprises a first P-type doped emitter and a second P-type doped emitter, the second P-type doped emitter is located in a metal contact area, and the first P-type doped emitter and the second P-type doped emitter are arranged on the first surface of the N-type substrate. The isolation structure is located between two adjacent second P-type doped emitters and used for isolating the first electrode and the N-type substrate, the first P-type doped emitter is located in the non-metal contact area, the first passivation layer is located on the side, away from the N-type substrate, of the doped structure in the non-metal contact area, and the first electrode is located on the side, away from the N-type substrate, of the isolation structure; the second tunneling dielectric layer, the second doped conductive layer, the second passivation layer and the plurality of second electrodes are located on the second surface. The solar cell solves the technical problem of how to improve the efficiency of the solar cell in the prior art.

The invention discloses a perovskite solar cell based on hole transport layer solvent engineering and a preparation method thereof. The preparation method comprises the following steps: preparing a hole transport layer precursor solution of the perovskite solar cell by using a mixed solvent of chlorobenzene (CB), ethyl acetate (EA) and 4-tert-butylpyridine (TBP); the optimal solvent formula is obtained by regulating and controlling the solvent proportion, and the high-quality organic hole transport layer thin film is prepared by using the spin-coating method, so that the efficiency and the stability of the perovskite solar cell are greatly improved, and the high-performance perovskite solar cell is further obtained. A new thought and a new method are provided for promoting industrial production and commercial application of the perovskite solar cell.

The utility model provides a solar cell and a photovoltaic module, and the cell comprises a substrate which is provided with a front surface, a back surface and a side surface; the emitter layer is located on the front surface, and the doping type of the emitter layer is opposite to that of the substrate; the first passivation layer is located on the side, away from the substrate, of the emitter layer; the first electrode is electrically connected with the emitter layer; the tunneling dielectric layer is positioned on the back surface; the doped conductive layer is located on one side, away from the substrate, of the tunneling dielectric layer, and the doping type of the doped conductive layer is the same as that of the substrate; the second passivation layer is located on the side, away from the substrate, of the doped conductive layer; the second electrode is electrically connected with the doped conductive layer; and at least one conductive structure in contact with the emitter layer and the doped conductive layer, respectively. The conductive structure can replace a current flowing path of the battery to normally transmit most of current from the doped conductive layer to the emitter layer, the generating capacity and the power of the battery are not greatly influenced, and the problem that the battery efficiency is low when the battery generates a hot spot effect is solved.

The invention relates to a solar cell with a P-type TOPCon passivation structure and a preparation method and application thereof. The solar cell with the P-type TOPCon passivation structure sequentially comprises a silicon substrate, an aluminum oxide layer, a first boron-doped polycrystalline silicon layer, a silicon oxide layer, a second boron-doped polycrystalline silicon layer, a passivation layer and a metal electrode. The aluminum oxide layer is used as a tunneling oxide layer, so that selective passing of holes can be realized, and the efficiency of the solar cell is further improved. And a large amount of boron sources can be prevented from being doped into the silicon substrate in the junction pushing oxidation process, the recombination center of the silicon substrate is reduced, and the passivation performance is improved. Besides, compared with the nitrogen silicide layer, the silicon oxide layer has small obstruction on boron source doping diffusion, so that the boron source concentration of the first boron-doped polycrystalline silicon layer and the boron source concentration of the second boron-doped polycrystalline silicon layer are more balanced, and the problem that internal and external work functions of the tunneling oxide layer are not matched is avoided. The silicon oxide layer can be grown on the first boron-doped polycrystalline silicon layer without additional equipment investment, so that the manufacturing cost is reduced.

The invention relates to a passivation solution, a perovskite solar cell, a preparation method of the perovskite solar cell, a photovoltaic module and an electric device. The passivation solution comprises a passivation material and a mixed solvent, the mixed solvent comprises a first solvent, a second solvent and a third solvent, the first solvent comprises alcohol, the second solvent comprises cyclic carbonyl, the third solvent comprises at least one of chlorobenzene, methylbenzene, acetonitrile, dichloromethane and ethyl acetate, and the boiling point of the second solvent is higher than that of the third solvent. The third solvent with a low boiling point preferentially volatilizes to help initial positioning of the passivation material, the second solvent with a high boiling point delays volatilization, and the second solvent comprises a cyclic carbonyl group and is matched with the first solvent alcohol, so that sufficient adsorption and ordered arrangement of the passivation material can be promoted, meanwhile, the second solvent is prevented from being left, and the three solvents are matched with one another. The uniformity of the formed passivation layer can be effectively improved, the interface compatibility with the perovskite light absorption layer is good, the interface potential barrier is effectively improved, the efficiency of the perovskite solar cell is improved, and the service life of the perovskite solar cell is prolonged.

The invention discloses a texturing additive for improving the efficiency of a solar cell as well as a preparation method and application of the texturing additive. The texturing additive comprises the following components in percentage by mass: 0.01%-0.1% of a main nucleating agent, 0.05%-0.2% of an auxiliary nucleating agent, 0.05%-0.5% of a dispersing agent, 0.5%-1% of a corrosion inhibitor and the balance of water. The additive provided by the invention can effectively regulate and control the reaction rate of alkali liquor and silicon, reduce the surface tension of texturing etching liquid, and enable hydrogen bubbles generated by reaction to be quickly separated from the surface of a silicon wafer, thereby inducing the surface of the silicon wafer to form a more uniform, regular and dense pyramid structure. The textured surface of a silicon wafer obtained after the texturing reaction is carried out by using the additive disclosed by the invention is more uniform, the reflectivity is lower, and the conversion efficiency of a solar cell is higher.

The invention discloses a solar cell passivation structure and a preparation method and application thereof. The preparation method comprises the following steps: preparing an aluminum oxide film layer on a substrate; the method for preparing the aluminum nitride film layer on the surface of the aluminum oxide film through the PECVD technology comprises the steps that the PECVD technology is adopted, a first aluminum nitride film layer is prepared on the surface of the aluminum oxide film layer under first power, and then a second aluminum nitride film layer is prepared on the surface of the first aluminum nitride film layer under second power larger than the first power. According to the method, the first aluminum nitride film layer is prepared on the surface of the aluminum oxide film layer through low-power PECVD, so that the aluminum oxide film layer can be protected, the situation that the efficiency and the production reject ratio of a solar cell are reduced due to the fact that the aluminum oxide film layer is damaged by too high power is prevented, and the production efficiency and the device efficiency are improved; and the passivation structure is constructed by compositing the aluminum nitride film layer and the oxide film layer prepared by adopting the step-by-step power, so that the passivation effect of the passivation structure can be effectively improved, and the efficiency of the solar cell is improved.

The invention discloses a passivation trans-broadband gap perovskite solar cell capable of effectively doping and releasing residual stress and a preparation method thereof, and the performance of a device is improved by releasing the residual stress in a perovskite active layer. The trans-broadband gap perovskite solar cell is composed of a glass substrate, a transparent conductive oxide, a hole transport layer, an organic-inorganic hybrid perovskite active layer, an intermediate insertion layer, an electron transport layer, a hole blocking layer and a metal electrode in sequence from bottom to top, and the perovskite active layer is composed of Cs0. 2FA0. 8PbI1. 8Br1. 2, n, N-dimethyl-2-sulfamoyl nicotinamide with the molar ratio of 0.3% is added into a perovskite component. According to the invention, the interface morphology and passivation defect of the film can be improved, and the residual stress in the perovskite active layer can be released, so that the preparation of the perovskite film with large-size crystal grains can be realized, and the efficiency and stability of the perovskite solar cell can be improved.

Disclosed herein is a solar deck system comprising a plurality of planks configured to form a deck or patio structure, each plank including at least one recess receiving a solar cell and a transparent covering flush with the walking surface. The solar cells are electrically interconnected and operably coupled to at least one energy storage unit for collection and use of generated electrical power. Each plank further incorporates a cooling array disposed beneath the solar cell, the array comprising cooling tubing embedded in an aluminum heat sink and fluidly connected between storage tanks. Circulating fluid absorbs excess heat to maintain solar cell efficiency and longevity while capturing recoverable thermal energy. Stored thermal energy may be directed to a heat pump, while stored electrical energy may power residential or commercial loads and auxiliary components. The integrated system enables efficient, modular, and optionally off‑grid energy generation directly from a deck installation.

The present application relates to the technical field of solar cell manufacturing. Specifically, a solar cell and a manufacturing method thereof are provided. The solar cell assembly comprises a solar cell piece, the solar cell piece comprising a surface conductive layer and a current collection structure on the surface of the surface conductive layer; a polarizing structure arranged on the surface of the current collection structure and corresponding to the position of the current collection structure; the polarizing structure is adapted to deflect the incident light directly incident on the current collection structure and make the incident light enter the area between adjacent current collection structures; and an encapsulation film layer covering the surface of the surface conductive layer and encapsulating the current collection structure and the polarizing structure. The solar cell and the manufacturing method thereof can effectively solve the problem of unsatisfactory solar cell efficiency caused by the grid lines blocking the incident light.

The application belongs to the technical field of semiconductor devices, and discloses a solar cell based on a perovskite film capable of inhibiting lead leakage and a preparation method thereof. A small molecule 3-MBA is used as a bifunctional Lewis base additive to be introduced into a perovskite precursor solution to prepare a perovskite film capable of inhibiting lead leakage and a solar cell. 2+ The sulfur atom of the thiol group and the oxygen atom of the carbonyl group in the 3-MBA provide two sites Pb 2 Passivation significantly improves the bonding strength and adhesion of lead in the perovskite structure, inhibits lead leakage of the perovskite solar cell, and enhances the stability of the device. In addition, due to the strong interaction between 3-MBA and the self-assembled monolayer, the influence on the device efficiency is small while inhibiting lead leakage. Experimental results show that the efficiency of a solar cell with an active area of 1cm 2 can reach 24.1%, and can present an environmental stability of more than 1900 hours at a temperature of 22 degrees and a humidity of 45%.

The utility model relates to the technical field of testers, in particular to a solar cell efficiency tester, which comprises a test box, the top of the test box is rotatably connected with a flip cover, the inside of the test box is fixedly connected with a tester, one side of the test box is provided with a support mechanism, the top of the tester is provided with a test switch, and the test switch is connected with the flip cover. A clamping mechanism is arranged between the test switch and the tester, a turnover cover is fixedly connected to one side of the turnover cover, a display is fixedly connected to the interior of the turnover cover, an insertion sealing plate is connected to the interior of one side plate of the test box in an insertion mode, and a metal plate is fixedly connected to the top of the insertion sealing plate; the tester, the test switch and the display are integrated, so that scattered equipment used by the equipment can be reduced, meanwhile, a damaged single instrument can be conveniently replaced, and the use is convenient.

A method of fabricating four junction solar cell wherein the selection of the composition of the subcells and their band gaps maximizes the efficiency at high temperature (in the range of 50 to 100 degrees Centigrade) in deployment in space at a specific predetermined time after initial deployment (referred to as the beginning of life or BOL), such predetermined time being referred to as the end-of-life (EOL), and being at least five years after the BOL, such selection being designed not to maximize the efficiency at BOL but to increase the solar cell efficiency at the EOL while disregarding the solar cell efficiency achieved at the BOL, such that the solar cell efficiency designed at the BOL is less than the solar cell efficiency at the BOL that would be achieved if the selection were designed to maximize the solar cell efficiency at the BOL.

This invention provides a solar cell, comprising: a substrate layer including a side surface and opposing first and second surfaces, including a first region and a second region; the first surface having an emission structure, a first passivation layer, a first plating layer, and a first electrode; a tunneling dielectric layer, a doped conductive layer, a second passivation layer, a conductive transport layer, and a second electrode located on the second surface; the second surface having a groove located in the second region, with a portion of the second passivation layer and a portion of the conductive transport layer located within the groove; the doped conductive layer located on the side of the tunneling dielectric layer away from the substrate layer; the conductive transport layer located on the side of the second passivation layer away from the substrate layer; and the second electrode located on the side of the doped conductive layer away from the substrate layer; a third passivation layer and a second plating layer located on the side surface, with the second plating layer located on the side of the third passivation layer away from the side surface. This solar cell solves the technical problem of improving solar cell efficiency.

The present invention relates to a back-contact solar cell and a method for fabricating the same. The method includes forming a porous lattice in a tunnel layer located in a first region on the backside of a silicon wafer having a first region and a second region, and forming a doped polysilicon layer on the surface of the tunnel layer facing away from the silicon wafer, with the doping concentration gradually decreasing in the direction away from the tunnel layer. In this application, forming multiple holes in the tunnel layer creates carrier tunneling paths within the tunnel layer, while doped atoms in the doped polysilicon layer form atomic-level "pinholes" on the surface of the tunnel layer, thereby reducing tunnel contact resistance. Furthermore, the region of the doped polysilicon layer in contact with the tunnel layer has the highest doping concentration, which, together with the tunnel layer, forms a higher asymmetric shift barrier layer, allowing majority carriers to pass through but blocking minority carriers. This allows for more uniform and smooth collection of majority carriers, enhancing the passivation effect and further improving solar cell efficiency.

The application relates to the technical field of perovskite photovoltaics, and discloses a polysiloxane polymer and a preparation method thereof, a perovskite thin film and a preparation method and application thereof, and a solar cell and application thereof. The polysiloxane polymer has a three-dimensional branched molecular structure and can realize chelation in multiple directions and multiple tooth sites. The preparation method comprises the following steps: in the presence of an inert atmosphere, tetraethyl orthosilicate and butenedioic acid are subjected to ester exchange polycondensation reaction to obtain a multi-tooth chelated hyperbranched polysiloxane polymer. In addition, the multi-tooth chelated hyperbranched polysiloxane polymer can be introduced into a perovskite thin film bulk phase, so that the defects of a perovskite material can be more effectively passivated, and the improvement of the efficiency and stability of a perovskite solar cell is further realized.