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Acidic texturing solution for etching solar cell silicon wafer, texturing method, solar cell silicon wafer and manufacturing method of solar cell silicon wafer

A solar cell and texturing liquid technology, applied in the field of solar cells, can solve the problems of restricting a wide range of applications, and achieve the effects of convenient application, simplified operation process, and extended optical path

Active Publication Date: 2014-12-10
深圳市石金科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the difference between this alkaline texturing process and the preparation of random pyramid structures is that it needs to prepare a mask layer, that is, it needs multi-step complex process steps such as high temperature oxidation, preparation of etching mask, high temperature etching, etc., thus limiting its large size. range of applications

Method used

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  • Acidic texturing solution for etching solar cell silicon wafer, texturing method, solar cell silicon wafer and manufacturing method of solar cell silicon wafer
  • Acidic texturing solution for etching solar cell silicon wafer, texturing method, solar cell silicon wafer and manufacturing method of solar cell silicon wafer
  • Acidic texturing solution for etching solar cell silicon wafer, texturing method, solar cell silicon wafer and manufacturing method of solar cell silicon wafer

Examples

Experimental program
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Effect test

Embodiment 1

[0056] 1) Surface cleaning steps

[0057] Take a P-type silicon wafer with a size of 156×156cm (resistivity 1-3Ωcm), put it in acetone and ultrasonically clean it for 5 minutes, put it in ethanol for 5 minutes, and then place it in a mixture of sulfur solution and hydrogen peroxide solution. solution (the concentration of sulfuric acid solution is 70wt%, the concentration of hydrogen peroxide solution is 35wt%, the volume ratio of sulfuric acid solution and hydrogen peroxide solution is 3:1), heat and boil the silicon wafer and keep it for 0.5 hours, and finally clean it with deionized water ultrasonically clean.

[0058] 2) Etching step

[0059] Immerse the pre-cleaned and water-washed silicon wafers in step 1) in the acidic texturing solution consisting of copper nitrate, hydrofluoric acid and hydrogen peroxide (wherein the concentration of copper nitrate is 7mmol / L, and the concentration of hydrofluoric acid is 5mol / L L, the concentration of hydrogen peroxide is 0.5 mol / L...

Embodiment 2-3

[0063]Its operating steps are the same as in Example 1, except that the concentration of copper nitrate, hydrofluoric acid and hydrogen peroxide in the acidic texturing solution and the temperature and time during texturing are different.

[0064] In Example 2, the concentration of copper nitrate is 4 mmol / L, the concentration of hydrofluoric acid is 7 mol / L, and the concentration of hydrogen peroxide is 0.3 mol / L. Heat the acidic texturing solution to 50°C and etch for 8 minutes.

[0065] In Example 3, the concentration of copper nitrate is 15 mmol / L, the concentration of hydrofluoric acid is 3 mol / L, and the concentration of hydrogen peroxide is 0.7 mol / L. Heat the acidic texturing solution to 70°C and etch for 8 minutes.

Embodiment 4-5

[0067] Its operating steps are the same as in Example 1, except that the concentration of copper nitrate, hydrofluoric acid and hydrogen peroxide in the acidic texturing solution and the temperature and time during texturing are different.

[0068] In Example 4, the concentration of copper nitrate is 0.1 mmol / L, the concentration of hydrofluoric acid is 10 mol / L, and the concentration of hydrogen peroxide is 0.1 mol / L. Heat the acidic texturing solution to 40°C and etch for 30 minutes.

[0069] In Example 5, the concentration of copper nitrate is 25 mmol / L, the concentration of hydrofluoric acid is 10 mol / L, and the concentration of hydrogen peroxide is 0.1 mol / L. Heat the acidic texturing solution to 80°C and etch for 5 minutes.

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Abstract

The invention discloses an acidic texturing solution for etching a solar cell silicon wafer, a texturing method, a solar cell silicon wafer and a manufacturing method of the solar cell silicon wafer. The acidic texturing solution comprises a copper ion source for providing 0.1-25mmol / L copper ions, a fluoride ion source for providing 0.5-10mol / L fluoride ions, and a 0.1-1.0mol / L oxidant for oxidizing copper into the copper ions. The surface of the silicon wafer is preferably textured by virtue of the acidic texturing solution and thus an independent, complete and compactly arranged micron-size inverted pyramid-shaped structure is formed on the surface of the silicon wafer at a relatively low temperature and a relatively short time. By adopting the inverted pyramid-shaped structure, the reflectivity of an incident light on the textured surface is reduced to 5%-15% such that the efficiency of the solar cell is improved. The inverted pyramid-shaped structure disclosed by the invention is not limited to the preparation of an HIT and a conventional diffusion cell and can be also applied in other solar cells and optoelectronic devices using a silicon substrate.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an acidic texturing solution for etching silicon wafers of solar cells, a texturing method, solar cells and a manufacturing method thereof. Background technique [0002] With the development and progress of human society, the demand for energy continues to increase, and with the depletion of non-renewable energy, people are increasingly dependent on renewable energy, especially solar energy. Among them, solar cells have gradually entered the daily life of the public. In the photovoltaic industry, how to improve the conversion efficiency of solar cells and reduce the cost has always been a key research issue, and an important means to improve the conversion efficiency of solar cells is to reduce the reflection of sunlight on the surface of silicon wafers. In order to reduce the reflection loss, the surface of the silicon wafer is usually textured or an anti-reflection film is...

Claims

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Application Information

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IPC IPC(8): C30B33/10H01L31/18H01L31/0236
CPCC30B33/10H01L31/18Y02P70/50
Inventor 刘尧平王燕杨丽霞梅增霞陈伟梁会力库兹涅佐夫·安德烈杜小龙
Owner 深圳市石金科技股份有限公司
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