179 results about "Inverted pyramid" patented technology

An electron sensing device includes a cathode for providing a source of electrons, and an anode disposed opposite to the cathode for receiving electrons emitted from the cathode. The anode includes a textured surface for reducing halo in the output signal of the electron sensing device. The textured surface may include either pits or inverted pyramids.

The invention discloses an acidic texturing solution for etching a solar cell silicon wafer, a texturing method, a solar cell silicon wafer and a manufacturing method of the solar cell silicon wafer. The acidic texturing solution comprises a copper ion source for providing 0.1-25mmol/L copper ions, a fluoride ion source for providing 0.5-10mol/L fluoride ions, and a 0.1-1.0mol/L oxidant for oxidizing copper into the copper ions. The surface of the silicon wafer is preferably textured by virtue of the acidic texturing solution and thus an independent, complete and compactly arranged micron-size inverted pyramid-shaped structure is formed on the surface of the silicon wafer at a relatively low temperature and a relatively short time. By adopting the inverted pyramid-shaped structure, the reflectivity of an incident light on the textured surface is reduced to 5%-15% such that the efficiency of the solar cell is improved. The inverted pyramid-shaped structure disclosed by the invention is not limited to the preparation of an HIT and a conventional diffusion cell and can be also applied in other solar cells and optoelectronic devices using a silicon substrate.

The invention relates to a method for preparing a pyramid array on a monocrystalline silicon substrate, and belongs to the technical field of manufacture of photovoltaic and semiconductor devices. The method comprises the following steps of: covering microballons in periodic arrangement on the surface of a monocrystalline silicon piece, and annealing near the glass transition temperature point of the microballoon; in oxygen atmosphere, obtaining a microballoon array in separation arrangement after etching by use of inductive coupling plasma; depositing a metallic titanium membrane on the monocrystalline silicon piece uniformly by a physical vapor deposition manner; and putting a silicon wafer with a masking film into an alkaline solution containing a surfactant for corrosion so as to obtain the pyramid array in order arrangement. The method is simple in process, short in preparation period and mature in technology; and three structures such as a positive pyramid array, an inverted pyramid array and a positive and inverted pyramid combined array can be obtained by a method for preparing a template through selecting and fine turning. The method has wide application value in the fields of photovoltaic, magnetic memory devices, nano photoelectric devices, nano sensors, surface raman enhancement and surface plasma effect and the like.

The invention discloses a graphene nanopore-microcavity-solid-state nanopore structure based DNA sequencing device and a method. The sequencing device is mainly composed of a graphene nanopore-equipped graphene microstrip, an inverted pyramid-shaped microcavity in a silicon-based substrate, and a solid-state nanopore at the top of the microcavity. During sequencing, a sequencing reaction chamber is divided into two parts by the graphene nanopore-microcavity-solid-state nanopore structure. A single-stranded DNA molecule passes through the graphene nanopore linearly under the effect of an electrostatic field, then enters the inverted pyramid-shaped microcavity, and finally comes out from the solid-state nanopore. Weak current measuring equipment is utilized to measure longitudinal ionic current blocking caused by the DNA molecule passing activity in the nanopore and the transverse conductance change around the nanopore in the graphene microstrip. Further, a synchronous data recording and processing system is employed for analytical calculation of bi-directional data, thus realizing sequence analysis of the single-stranded DNA molecule.

The invention discloses a transition metallic oxide-silicon heterojunction solar cell and a preparation method thereof. The solar cell comprises a metal back electrode, a silicon inverted pyramid array, an N-type silicon substrate, a silicon pyramid array, a hole transport layer and a positive electrode. The hole transport layer is a transition metallic oxide thin film. According to the invention, by using the transition metallic oxide thin film as the hole transport layer, so on one hand, compared with the P-type conjugated organic matters, stability of the solar cell is improved and technical requirements on encapsulation are reduced, thereby reducing manufacturing cost; and on the other hand, compared with a traditional silicon solar cell, technology of high-temperature phosphorus diffusion and diffusion layer removing are not required, so technology is simplified, and manufacturing cost is reduced. In addition, methylation processing is performed on surface of the silicon substrate, so performance of a device is improved and stability in air of the device is also improved.

The invention provides a T-shaped range hood with multiple layers of oil fume separation meshes. The T-shaped range hood comprises a housing, an external oil fume separation mesh, a middle oil fume separation mesh, an internal oil fume separation mesh, an oil cup, a motor, a volute with a motor bracket, double worms, a smog sensor and other range hood assemblies, wherein the external oil fume separation mesh is of an inverted pyramid shape, the middle oil fume separation mesh is in a plane shape, the internal oil fume separation mesh is in an M shape, and the three oil fume separation meshes form a wrapping progressive space. In light of a principle of fluid dynamics, a huge negative pressure region is generated to collect oil smoke deeply, the resistance is reduced when the oil fume rises and the exhaust air quantity is increased; the smog sensor senses smog to automatically adjust the motor to rotate so as to adjust the suction of the range hood. The T-shaped range hood sucking and exhausting the oil fume has the functions of quickly sucking the oil smoke and automatically adjusting wind power, avoids the risk that the working performance of the range hood is affected as the oil fume is unsmooth to suck and exhaust when the oil fume in the raising process blocks the smoke meshes, and improves the performance of the T-shaped range hood in the oil fume suction and exhaust.

A large three-dimensional 3D image formation device includes four projectors, four optical reflecting lenses, four transparent reflecting lenses, mounting box and four image source reflecting lenses. The projectors project images onto the optical reflecting lenses, and the images are reflected to the image source optical reflecting lenses, such that the image source optical reflecting lenses have image source patterns, and the four image source patterns are projected to the four transparent reflecting lenses combined into an inverted pyramid shape, such that the four image source patterns can be combined at the center of the four transparent reflecting lenses, and viewers can see a 3D image floating in the air from any angle. The large three-dimensional 3D image formation device provides a lively 3D perception to enhance the value of the product.

The invention discloses an inverted pyramid structure of a polysilicon surface and a fabrication method of the inverted pyramid structure. The method comprises the following steps: preparing black silicon by different methods; rinsing a sample in a mixed liquid of hydrogen peroxide and ethanol amine; and carrying out retreatment on the washed black silicon in a mixed liquid of hydrogen peroxide, hydrofluoric acid, metaphosphoric acid and ammonium fluoride, so as to form the inverted pyramid structure of the polysilicon surface. A wet-chemical method which is different from acid and alkaline corrosion is adopted. According to the method, the effects of anisotropy can be reduced to the maximal extent; and the black silicon with different nano-structures can be corroded into a nano textured structure with a regular inverted pyramid structure through oxidation. Compared with the traditional polycrystalline silicon texture, the polysilicon inverted pyramid light-trapping structure disclosed by the invention is relatively high in light utilization rate and relatively low in reflectivity, so that the polysilicon inverted pyramid light-trapping structure has the characteristics of the inverted pyramid structure; compared with the traditional high surface recombination of a small and dense structure of the black silicon, the surface recombination is obviously reduced; and the efficiency of a solar cell is higher.

The invention provides a polycrystalline silicon wafer texturing auxiliary and an application method thereof. The auxiliary comprises a silver inducer, an oxidizing agent, a buffering agent, a dispersing agent and deionized water. The auxiliary is added to a traditional isotropic texturing liquid composed of mixed liquor of hydrofluoric acid and nitric acid, then a polycrystalline silicon wafer is immersed in the texturing liquid, and isotropic corrosion and anisotropic corrosion occur on the surface of the silicon wafer, thereby obtaining a silicon surface with coexisting isoropic corrosion pits whose reflectivity is lower than 10% and anisotropic inverted pyramid morphology. The function of the buffering agent is to maintain the stability of a PH value of the texturing liquid; the oxidizing agent can suppress anisotropic corrosion of the silver inducer, thereby avoiding formation of too deep holes; and the dispersing agent can avoid the ''raindrop'' defect, and also wraps nano-silver particles attached to the surface of the silicon wafer, thereby substantially reducing cleaning difficulty of the silicon wafer after texturing. The polycrystalline silicon wafer texturing auxiliary provided by the invention overcomes some deficiencies of existing polycrystalline silicon texturing methods, and is particularly suitable for texturing of a polycrystalline silicon wafer cut by diamond wires.

The invention relates to a method for preparing a black silicon structure with low cost, and belongs to the technical field of photoelectricity. The method comprises the following steps of (1) precleaning a solution; (2) putting the cleaned silicon chip into a mixing solution of H2O2 (hydrogen peroxide), HF (hydrogen fluoride), AgNO3 (silver nitrate), Cu(NO3)2 (copper dinitrate) and ultrapure water, and etching, so as to prepare a black silicon nanometer antireflection structure; (3) optimizing the black silicon structure by a nanometer reconstruction solution, so as to form a uniform inverted pyramid-shaped structure. The method has the advantages that the polycrystalline silicon is performed with chemical etching by an Ag-Cu bimetallic assisting type; compared with the existing Ag-assisted chemical etching type, the consumption amount of AgNO3 is decreased by more than several dozens of times; the technology is simple, the preparation cost of black silicon is reduced, and the batch preparation of large-area black silicon is reduced; the black silicon structure is optimized by the nanometer reconstruction solution, and the huge application potential is realized in the preparation of black silicon solar batteries with high conversion efficiency.

The invention discloses a flat and dense type vertical modular drug storage cabinet which comprises a dense type deep-well horizontal drug storage cylinder, a feeding device and a discharging device. The dense type deep-well horizontal drug storage cylinder is composed of a plurality of drug groove units. The drug groove units are arranged in an array mode in the vertical direction. The tops of the drug groove units are distributed in a flush mode. The bottoms of the drug groove units are distributed in an inverted-pyramid shape. The feeding device is used for conveying a plurality of drug boxes to each drug groove unit. Each drug groove unit is of a cuboid type cylindrical structure. Inserting pieces are laid in all the cylindrical drug grooves respectively in the vertical direction. The inserting pieces are used for adjusting the drug storage dimension of each drug groove unit. The bottom of each drug groove unit is provided with a drug outlet and an ejection device. The flat and dense type vertical modular drug storage cabinet has the technical advantages of being large in drug storage amount, small in occupied space, higher in automation degree of feeding and discharging, safe and reliable in performance and the like.

The invention discloses a preparing method for a large-area metal nanometer needle-tip array on a flexible substrate. The preparing method includes the following steps that (1) a metal chromium film is evaporated on the silicon slice substrate and coated with photoresist in a spinning mode; (2) a photoresist pattern with a hole array is prepared with the exposing-developing-fixing technology; (3) the portion, which is not protected by the photoresist pattern, of the metal chromium film is removed with ceric ammonium nitrate, and the surface of the silicon substrate at the bottom is exposed; (4) a silicon slice sample is etched with an alkali solution, and an inverted-pyramid silicon hole array is obtained; (5) a metal film is deposited on the surface of the sample, and a chromium metal layer and the deposited metal film on the surface of a silicon slice are removed in a stuck mode through adhesive tape; (6) the surface of the silicon slice is poured with a flexible soft mold material, the sample is corroded with an alkali solution, and finally the large-scale metal nanometer needle-tip array on the flexible substrate is obtained. The preparing method for the large-area metal nanometer needle-tip array on the flexible substrate has the advantages of being large in scale, low in cost and good in performance.

The invention provides a light collimating thin film, a lateral incidence type backlight module, a liquid crystal display device and a micro light emitting diode display device. The light collimatingthin film comprises a substrate and a plurality of inverted pyramid structures, wherein the substrate comprises a first surface and a second surface which are oppositely arranged; and the inverted pyramid structures penetrate the substrate, and a first cross-sectional area of each inverted pyramid structure on the first surface is greater than a second cross-sectional area of the same on the second surface. The light collimating thin film proposed by the invention has the plurality of inverted pyramid structures which are simple in structure, and utilizes a collimation principle of a tapered optical fiber to limit an emergence angle range of light passing through the light collimating thin film, therefore, the light collimation effect of the light collimating thin film can enable a displaydevice to have a peep-proof function.

The invention discloses a texturing additive for inverted pyramid textured monocrystalline silicon wafer and application thereof. The texturing additive comprises the following components: a nonionicsurfactant, a cationic surfactant, polyethylene glycol, an organic salt and the balance water. An alkali solution added with the texturing additive provided by the invention can be used for preparation of an inverted pyramid texture on a monocrystalline silicon wafer surface, catalysis of silver, copper and other precious metal ions is not needed, the texturing cost can be lowered, environmental pollution is reduced, therefore the texturing additive is more conducive to the process stability of crystalline silicon solar cells, and has good practical value. By using the alkali solution added with the texturing additive provided by the invention for texturing of a monocrystalline silicon wafer surface, a uniform, fine and dense textured inverted pyramid can be obtained. And the texturing additive provided by the invention does not contain isopropanol or ethanol, has no toxicity, corrosiveness, irritation, also has no burning or explosion hazard, and can avoid environmental pollution. Moreover, the manufacturing and use process of the texturing additive is simple, employs cheap equipment and has good repeatability.

The invention discloses a device and method for parallel mask-less scanning micro-nano processing based on an atmospheric pressure plasma jet tube. The processing device comprises the atmospheric pressure plasma jet tube and a jet nozzle tip array integrated at the lower end of the jet tube, wherein a three-dimensional precise movable platform is disposed on the lower part of the jet nozzle tip array; the jet nozzle tip array comprises multiple jet nozzle tips which are equipped with micro-nano holes; and each jet nozzle tip is equipped with a hollow micro chamber which is shaped like an inverted pyramid. The atmospheric pressure plasma jet tube is placed in an atmospheric pressure environment; reaction gases are continuously injected into the jet tube; ionization takes place to the reaction gases under an electric field effect, so that reaction plasma is generated; and the jet nozzle tip array is used to form a plasma nano jet flow array. The three-dimensional precise movable platform controls a plasma micro jet flow device to generate motion relative to a processed sample, so that low-cost, high-precision and efficient mask-less etching, sedimentation processing and surface modification can be implemented to multiple materials. In this way, requirements for processing and application of a small batch of micro-nano devices with multiple varieties can be satisfied.

The invention discloses a three-dimensional all-solid-state mini thin-film lithium battery with an inverted pyramid array structure, and relates to lithium batteries. The three-dimensional all-solid-state mini thin-film lithium battery is provided with a substrate, an insulation film, a cathode current collector, a lower anode current collector, a cathode film, a solid electrolyte film, an anode film and an upper anode current collector, wherein the insulation film is arranged on the substrate; the cathode current collector and the lower anode current collector are arranged on the insulation film; the cathode film is arranged on the cathode current collector; the solid electrolyte film covers the cathode film; the anode film is arranged on the solid electrolyte film; the upper anode current collector is arranged on the anode film and the lower anode current collector. Based on the anisotropic etching of a silicon substrate, the inverted pyramid array structure is precisely manufactured and applied to the all-solid-state mini thin-film lithium battery, so that the capacity of active substances in unit standing area is improved and the contact between the thin films is tight. According to the unique design of a mask, the upper and lower circuits are guided to a same plane, so that the space utilization rate and the structure stability of the mini battery are effectively improved.

The invention discloses a dustproof 360 degree holographic projection cabinet in the holographic projection equipment field. The dustproof 270 degree holographic projection cabinet comprises a cabinet body, a projector, and an imaging glass housing. The cabinet body comprises a bottom plate, a pedestal and a working platform. The pedestal is installed in the middle of the bottom plate; the pedestal is internally provided with a controller; the working platform is fixed on the top end of the pedestal; the imaging glass housing is an inverted pyramid-shaped glass housing; the bottom end of the imaging glass housing is fixed in the middle of the working platform; the upper end of the working platform is provided with four rectangle-shaped grooves corresponding to the side walls of the glass housing; each groove is internally provided with a projector; the side of each groove which is closed to the imaging housing is provided with a cross flow fan which is in signal connection with the controller. Through the arrangement of the cross flow fan, the dustproof 360 degree holographic projection cabinet can effectively perform cleaning on the surface of the imaging housing, enables the imaging housing to keep clean for long time, enables the 360 degree holographic projection imaging to be clear and real, has a good effect of displaying the object and provides convenience to the usage of the 360 degree holographic projector.

The invention discloses a flexible graphene/silicon solar cell preparation method. The method comprises the following steps: to begin with, preparing a flexible silicon wafer; then, carrying out sealing treatment on the flexible silicon wafer; introducing an inverted pyramid structure onto the surface of the flexible silicon wafer; carrying out passivation on the surface of the silicon wafer through a chemical passivation or/ and field passivation method; realizing modification of graphene quantum dots on the surface of the silicon wafer through a spin-coating method; introducing a conductivelayer and transferring sheet graphene; and finally, carrying out electrode access, and thus finishing preparation of the flexible graphene/silicon solar cell. The method prepares ultra-thin flexible silicon, and allows the silicon to bend and reduces consumption of silicon amount; a large-scaleinverted pyramid array is introduced onto the surface of the ultrathin silicon substrate through low-costchemical etching and metal copper catalytic chemical etching techniques, thereby increasing silicon substrate spectrum absorption rate and reducing the surface area of the silicon; and the graphene and the quantum dot layer are introduced to the graphene and ultrathin silicon interface, so that a coating antireflection and electron blocking layer function is achieved, the cell is allowed to be more efficient, and the method is wider in application prospect.

A heat spreader package includes a substrate having a first surface, first traces on the first surface of the substrate, and an electronic component having an inactive surface mounted to the first surface of the substrate. The electronic component further includes an active surface having bond pads. Bond wires electrically connect the bond pads to the first traces. An inverted pyramid heat spreader includes a first heatsink, a first heatsink adhesive directly connecting the first heatsink to the active surface of the electronic component inward of the bond pads, a second heatsink having an absence of active circuitry, and a second heatsink adhesive directly connecting a first surface of the second heatsink to the first heatsink. The second heatsink adhesive is a dielectric directly between the bond wires and the second heatsink that prevents inadvertent shorting between the bond wires and the second heatsink.

The invention provides a GaN-based LED vertical chip structure and a preparation method, the structure comprising: a bonding substrate; a P pad; an inverted pyramid-shaped light-emitting epitaxial structure with inclined side walls, including sequentially stacked P-GaN layers, quantum A well layer and an N-GaN layer, the surface of the N-GaN layer is formed with a roughened structure; a transparent insulating layer is formed on the surface of the inclined side wall; a reflective layer is formed on the surface of the transparent insulating layer; and an N pad. In the present invention, the side wall of the light-emitting epitaxial structure is made into an inverted pyramid, and coated with a reflective layer, which can effectively improve the existing LED vertical chip with a positive pyramid-shaped side wall and almost completely limit the light rays whose exit angle is greater than the critical angle of total reflection. defects inside the device, and transmit more of the light that strikes the sidewall over a shorter distance. The vertical chip side wall structure of the present invention increases the light extraction efficiency and is more conducive to light output. At the same time, the insulating material is used to protect the side wall, effectively avoiding chip leakage caused in the manufacturing process, and improving chip reliability.