The application relates to the technical field of
silicon nano array, and proposes a
permeation passivation method for a
silicon nano array, which comprises the following steps: dropping a
passivation solution onto the surface of the
silicon nano array, standing until
permeation, and completing
passivation. Through the technical scheme, 1) the passivation problem of the silicon nano array is solved, the silicon nano array prepared through physical
etching and chemical
etching is effectively and high-quality passivated, large-scale vacuum equipment required by an existing passivation scheme is eliminated, the process is simplified, the cost is reduced, and the safety is improved; 2) the silicon nano array is
permeation passivated, so that the silicon nano array simultaneously has low
reflection loss and low recombination loss functions, meets two necessary conditions of inverse
Auger abnormal
photovoltaic effect (that is, one
photon generates two pairs of
electron-hole pairs), the external
quantum efficiency is greater than 100%, the SQ theoretical limit of the single-
crystal silicon cell efficiency can be broken through, and higher
cell photoelectric conversion efficiency can be obtained.