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556results about "Specific nanostructure formation" patented technology

Method for preparing dispersant-free semi-conductive single-walled carbon nanotube film

The invention discloses a method for preparing a dispersant-free semi-conductive single-walled carbon nanotube film. The method comprises steps as follows: a single-walled carbon nanotube and a conjugated polymer dispersant are dispersed in an organic solvent I together, and a dispersion solution I is prepared; the dispersion solution I is subjected to centrifugal treatment, supernatant liquor is collected and filtered, and a semi-conductive single-walled carbon nanotube with the surface coated with a dispersant is obtained; an organic solvent II is provided, and the semi-conductive single-walled carbon nanotube with the surface coated with the conjugated polymer dispersant is washed; an organic solvent III is provided, the washed semi-conductive single-walled carbon nanotube is dispersed, and a dispersion solution II is prepared; the dispersion solution II is applied to a substrate I, and the dispersant-free semi-conductive single-walled carbon nanotube film is obtained. Compared with the prior art, the dispersant-free semi-conductive single-walled carbon nanotube film prepared with the method can show intrinsic performance of the single-walled carbon nanotube and is suitable for preparation of a high-performance carbon nanotube film semi-conductor device.
Owner:苏州希印纳米科技有限公司

Method for preparing metal oxide-graphene nanocomposite and method for preparing electrode using metal oxide-graphene nanocomposite

Disclosed is a method of preparing a metal oxide-graphene nanocomposite, including preparing a nanocomposite material, forming graphene flakes by pretreating the nanocomposite material, and hydrothermally synthesizing the pretreated nanocomposite material. A method of manufacturing an electrode using the metal oxide-graphene nanocomposite is also provided. According to this invention, the metal oxide-graphene nanocomposite is synthesized from inexpensive graphite through one-step processing using only a surfactant, in place of conventional methods using oxidants, reductants and high-temperature heat, thereby lowering the number of processing steps and processing costs. Also, in the fabrication of the electrode, low electrical resistance characteristic of graphene is applied as it is, in place of the conventional use of active material, conductive material and binder, thereby exhibiting desired processing efficiency without the addition of the conductive material. Furthermore, highly pure graphene is prepared in a short time and various metal oxide active materials suitable for use in energy storage devices, for example, unary, binary, and multicomponent metal oxides, is formed through one-step processing, and necessary oxides having desired weight ratios {cobalt oxide (CoO), tricobalt tetraoxide (Co3O4), and cobalt hydroxide [Co(OH)2]} can be easily prepared, and thus very wide application ranges (secondary batteries, gas sensors, etc.) are expected.
Owner:AJOU UNIV IND ACADEMIC COOP FOUND
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