The invention provides an LB
assembly method of Te nanowires on different substrate surfaces, which comprises the following steps: S1, adding 0.1 g of PVP, 0.11 g of Na2TeO3, 0.2 ml of N2H4.H2O, 7 ml of 0.096 mol / L NaOH solution and 20.8 ml of
purified water into a reaction kettle, reacting at 160 DEG C for 3 hours, cooling, cleaning with
purified water for three times, and dispersing the product in water to obtain a Te
nanowire dispersion liquid; s2, modifying the surface of the SiO2 substrate by using APS, and forming
photoresist stripes with a preset size on the photoetching substrate through a photoetching technology; s3, dispersing the Te nanowires in the step S1 in a
chloroform-
ethanol solvent with the volume ratio of 1: 3, spreading the Te nanowires on a water phase interface to form a single-layer film, and transferring the single-layer film to the photoetching substrate in the step S2 through dip-
coating; s4, soaking the assembled Te
nanowire sample in
acetone at normal temperature for one night, and removing the
photoresist on the surface of the substrate; the method disclosed by the invention has the advantages that the assembled Te nanowires are good in orientation and tidy and dense in arrangement.