Method for preparing dispersant-free semi-conductive single-walled carbon nanotube film

A single-walled carbon nanotube and semiconducting technology, which is applied in the field of preparing semiconducting single-walled carbon nanotube films without dispersant, can solve the problems such as the influence of the purity of carbon nanotubes

Active Publication Date: 2016-05-18
苏州希印纳米科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the purity of carbon nanotubes will be seriously affected by the dispersant during this process.
At present, no monodisperse semiconducting single-walled carbon nanotube films have been successfully prepared by the above method.

Method used

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  • Method for preparing dispersant-free semi-conductive single-walled carbon nanotube film
  • Method for preparing dispersant-free semi-conductive single-walled carbon nanotube film
  • Method for preparing dispersant-free semi-conductive single-walled carbon nanotube film

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specific Embodiment approach

[0037] ginseng figure 1 Introduce a specific embodiment of a method for preparing a dispersant-free semiconducting single-walled carbon nanotube film of the present invention, the method specifically includes the following steps:

[0038] S1. Disperse the single-walled carbon nanotubes and the conjugated polymer dispersant in the organic solvent 1 to prepare a dispersion solution 1 . Specifically, the single-walled carbon nanotubes are single-walled carbon nanotubes grown by chemical vapor deposition, arc discharge or laser evaporation, wherein the single-walled carbon nanotubes include metallic single-walled carbon nanotubes and semiconductive single-walled carbon nanotubes. nanotubes; conjugated polymer dispersant is polycarbazole; organic solvent one is toluene or N-methylpyrrolidone (NMP). Mix single-walled carbon nanotubes, polycarbazole and toluene or N-methylpyrrolidone (NMP), and perform ultrasonic dispersion treatment. The ultrasonic power is 20W-100W, and the time i...

Embodiment 1

[0048] 1. Weigh 50 mg of conjugated polymer dispersant and 5 mg of single-walled carbon nanotubes prepared by chemical vapor deposition into a beaker, then add 100 ml of toluene to form a mixed solution;

[0049] 2. Ultrasonicize the above mixed solution, set the power to 100W, and the time is 0.5h, centrifuge after the ultrasonication is completed, set the centrifugal speed to 10000g, and the time is 20h. After the centrifugation is completed, the supernatant is collected, and the supernatant is filtered using a polytetrafluoroethylene filter membrane with a filter hole of 0.1 micron, and the semiconductive single-walled carbon nanotubes coated with a conjugated polymer dispersant remain on the filter membrane. Part of the conjugated polymer dispersant and metallic single-walled carbon nanotubes are filtered out through the filter pores;

[0050] 3. Soak the semiconducting single-walled carbon nanotubes on the filter membrane in a large amount of xylene solvent, and ultrasoni...

Embodiment 2

[0055] 1. Weigh 50mg of conjugated polymer dispersant and 100mg of single-walled carbon nanotubes prepared by arc discharge method into a beaker, then add 100ml of N-methylpyrrolidone (NMP) to make a mixed solution;

[0056] 2. Ultrasonicize the above mixed solution, set the power to 20W, and the time is 2h, centrifuge after the ultrasonication is completed, set the centrifugal speed to 1000000g, and the time is 0.5h. After the centrifugation is completed, the supernatant is collected, and the supernatant is filtered using a polytetrafluoroethylene filter membrane with a filter hole of 0.025 microns, and the semiconductive single-walled carbon nanotubes coated with a conjugated polymer dispersant remain on the filter membrane. Part of the conjugated polymer dispersant and metallic single-walled carbon nanotubes are filtered out through the filter pores;

[0057] 3. Soak the semiconducting single-walled carbon nanotubes on the filter membrane in a large amount of cyclohexane so...

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Abstract

The invention discloses a method for preparing a dispersant-free semi-conductive single-walled carbon nanotube film. The method comprises steps as follows: a single-walled carbon nanotube and a conjugated polymer dispersant are dispersed in an organic solvent I together, and a dispersion solution I is prepared; the dispersion solution I is subjected to centrifugal treatment, supernatant liquor is collected and filtered, and a semi-conductive single-walled carbon nanotube with the surface coated with a dispersant is obtained; an organic solvent II is provided, and the semi-conductive single-walled carbon nanotube with the surface coated with the conjugated polymer dispersant is washed; an organic solvent III is provided, the washed semi-conductive single-walled carbon nanotube is dispersed, and a dispersion solution II is prepared; the dispersion solution II is applied to a substrate I, and the dispersant-free semi-conductive single-walled carbon nanotube film is obtained. Compared with the prior art, the dispersant-free semi-conductive single-walled carbon nanotube film prepared with the method can show intrinsic performance of the single-walled carbon nanotube and is suitable for preparation of a high-performance carbon nanotube film semi-conductor device.

Description

technical field [0001] The invention belongs to the technical field of carbon nanotubes, and in particular relates to a method for preparing a dispersant-free semiconducting single-walled carbon nanotube film. Background technique [0002] Single-walled carbon nanotubes (single-walled carbon nanotubes: SWNTS), as one of the most promising one-dimensional semiconductor materials, has received great attention in the field of electronics. Single-walled carbon nanotubes include metallic single-walled carbon nanotubes (m-SWCNTS) and semiconducting single-walled carbon nanotubes (s-SWCNTS). Among them, semiconducting single-walled carbon nanotubes (s-SWCNTs) are There are many researches and applications in the field of optics and optoelectronics. [0003] Usually, because semiconducting single-walled carbon nanotubes have a large specific surface area, they are prone to agglomeration. Therefore, obtaining monodisperse semiconducting single-walled carbon nanotubes through the act...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02B82B3/00B82Y40/00B82Y30/00
CPCB82B3/0009B82Y30/00B82Y40/00C01B2202/02C01P2004/04
Inventor 邱松韩杰李红波金赫华李清文
Owner 苏州希印纳米科技有限公司
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