The present invention provides a
plasma processing method with which it is possible to reduce the occurrence of bowing during
etching. A
plasma processing method according to the present disclosure is executed in a
plasma processing apparatus that has a chamber, the
plasma processing method including: a preparation step for preparing a substrate, which has a first film and a second film that is provided on the first film, in the chamber, the second film containing an organic-inorganic
hybrid material, the second film having an opening pattern, and the first film being exposed in at least one opening which is defined by the opening pattern; a step for supplying a processing gas into the chamber; a step for generating plasma from the processing gas; and an
etching step for
etching the first film by means of the plasma, using the second film as a
mask. The etching step includes: (a) a step for forming a side wall on the first film by etching the first film using the second film as a
mask, wherein the first film is etched in at least one opening that is defined by the opening pattern, and the side wall defines a recessed part in the first film; (b) a step for scattering some of the organic-inorganic
hybrid material from the second film by means of the plasma; (c) a step for forming a protective film on the side wall, wherein the protective film is formed by adhering the scattered organic-inorganic
hybrid material to the side wall; and (d) a step for further etching the first film in the opening using the second film as a
mask.