15 results about "Lattice plane" patented technology

The invention provides a three-dimensional neutron diffraction data processing method and system for a single crystal material, and the method comprises the steps: carrying out the rough scanning of a single crystal sample through a pole figure mode, and determining the rotation center of a single crystal sample signal; performing fine scanning at the rotation center to obtain a three-dimensional neutron diffraction signal; decomposing the three-dimensional neutron diffraction signal to obtain a diffraction peak curve and a rocking curve plane; correcting the coordinates of the rocking curve plane; decomposing the corrected rocking curve plane to obtain a rocking curve; and according to the diffraction peak curve and the rocking curve, quantitatively analyzing interplanar spacing and orientation distribution information in the three-position diffraction signal. The method can realize nondestructive characterization of the internal microstructure of the single crystal material, provides accurate data support for research of lattice strain distribution and orientation characteristics, and can realize synchronous characterization analysis of lattice spacing and orientation distribution information.

Disclosed herein is an electrolytic copper foil for a current collector of a secondary battery. The electrolytic copper foil ranges in elongation per unit thickness at room temperature from 1.3 to 2.0% / μm and in I(200) / I(111) at room temperature from 3.4 to 0.5, wherein I(200) / I(111) is a ratio of an intensity of a diffraction peak for (200) lattice plane to an intensity of a diffraction peak for (111) lattice plane on an XRD spectrum for a deposited plane.

The present invention provides a control device, a system, a method, and a program, which can effectively utilize the axes of the goniometer of a diffractometer and can perform precise control of the incident angle of the axis even without a special axis structure. The control device controls the posture of a sample and includes: an input unit that receives an input of tilt information indicating the tilt of the sample with respect to the axis; an adjustment amount determination unit that uses the tilt information to determine adjustment amounts of ω values and χ values for correcting the deviation amount between the sample surface normal or the lattice plane normal and the scattering vector with respect to a changing value; and a drive instruction unit that, during X-ray diffraction measurement, drives the goniometer in accordance with the rotation of the axis of the sample based on the determined adjustment amounts of the ω values and the χ values. In this way, the adjustment angle for eliminating the tilt angle of the sample that is not affected by the rotation of the axis can be converted into adjustment amounts of ω values and χ values that are independent of the axis rotation.

This ScAlN laminate includes a substrate, an intermediate layer formed on the substrate and a ScAlN thin film formed on the intermediate layer, and a nearest neighbor distance, which is a distance between atoms closest to each other in a lattice plane parallel to a surface of the intermediate layer, is shorter than the a-axis length of the ScAlN thin film.

A carbon material containing graphite particles. The graphite particles are natural graphite coated with an amorphous carbonaceous substance. When the carbon material is included in an electrode fabricated by adding a binder resin and a dispersion medium to the carbon material to form a slurry, applying the slurry to a metal current collector, drying the applied slurry to form an active material layer on the metal current collector, and then pressing the active material layer such that the active material layer has a density of 1.65 g / cm3, the carbon material has an orientation parameter intensity ratio I(002) / I(110) of from 200 to 1200, where I(110) is a peak intensity corresponding to a lattice plane (110) and I(002) is a peak intensity corresponding to a lattice plane (002), and both I(110) and I(002) are obtained by a wide-angle X-ray diffraction measurement.

A crystal structure analysis in which: each of a plurality of samples are irradiated while the angle of incidence is continuously changed by rotating the crystal, whereby diffraction spot intensity and reliability for a plurality of crystal lattice planes are determined and a data set (Data-1, Data-2, Data-3, . . . , Data-n) is acquired; whether or not to perform merging, which is a process of combining multiple sets of data into one, is determined for each individual set of data on the basis of a merging criterion (e.g., Rint, completeness); merging is performed on data for which merging is to be performed; and a crystal structure is determined according to merged data. A crystal structure analysis result is obtained in a crystal structure analysis method, a crystal structure analysis device, and a crystal structure analysis program in which a crystal structure is determined by data-processing and analyzing a plurality of diffraction profiles.

A structure that includes a Josephson Junction located on a substrate. The Josephson Junction includes a first electrode, a second electrode, and a tunnel junction located between the first electrode and the second electrode. The tunnel junction is located in a recess of the substrate and herein the recess is based on the crystalline lattice of the substrate.

To provide a single crystal 4H-SiC substrate having a specific orientation of crystal structures that is set so as to reduce or even eliminate occurrence of cracks or fissures during mechanical processing, and a manufacturing method thereof.SOLUTION: A single crystal 4H-SiC substrate has a longitudinal axis C and a side face parallel to the longitudinal axis and curved at least partially. Crystal structures of the 4H-SiC substrate are oriented so that a line segment that crosses a parallel cleavage surface having at least a prescribed minimum number per unit length with a prescribed shape exists at each position on the side face of a semi-product with respect to the longitudinal axis, and the line segment is defined by a plane that is in contact with the side surface at one point at the position.SELECTED DRAWING: Figure 13B

This invention discloses a method for fabricating a monochromator and a monochromator, belonging to the field of synchrotron radiation technology. The method includes a crystal polishing step, a step of calibrating the intersection line between the lattice plane and the crystal surface and cutting to make the calibrated lattice plane and the crystal surface approximately parallel, a step of polishing the crystal surface to make it completely parallel to the lattice plane, a bonding step, and a detection step. A monochromator is fabricated using this method. This invention utilizes the bonding technology of two perfectly polished crystals and a high-precision crystal polishing method to fabricate a bonded channel-cut monochromator device suitable for perfect X-ray imaging, solving the problems of stability and uneven beam distribution in current monochromators.

The present invention provides a nickel nanowire which is less likely to break due to stress. The present invention relates to a nickel nanowire having a face-centered cubic lattice structure and a crystallite size of 10 nm or less in the direction of (111) lattice plane.

The present invention provides a nickel nanowire, which is resistant to break by stress. The present invention relates to a nickel nanowire having a face-centered cubic lattice structure and a crystallite size in a direction of a (111) lattice plane of 10 nm or less.

The invention relates to a SiC single crystal, a SiC substrate, and a SiC epitaxial wafer. The purpose of the present invention is to provide a SiC single crystal capable of reducing the basal plane dislocation density. In the SiC single crystal according to the present embodiment, lattice planes measured along a first straight line, a second straight line, a third straight line, a fourth straight line, a fifth straight line, and a sixth straight line are each curved in a convex shape, and in the lattice planes measured along the first straight line, the second straight line, the third straight line, the fourth straight line, the fifth straight line, and the sixth straight line, the first straight line, the second straight line, the third straight line, the fourth straight line, the fifth straight line, and the sixth straight line are curved in a convex shape. The first straight line, the second straight line, the third straight line, the fourth straight line, the fifth straight line, and the sixth straight line respectively pass through the center in plan view from the thickness direction and are inclined by 30 degrees one by one with respect to the center.

To provide a photoreceptor with characteristics changed less by repeated use under a low-temperature and low-humidity environment, the photoreceptor suppressing increase of residual potential.SOLUTION: The photoreceptor includes a conductive support (31), an undercoat layer (32) on the conductive support, and a photosensitive layer (33) on the undercoat layer in this order, the undercoat layer containing a nylon resin, and the photoreceptor being characterized in that, when X-rays having a wavelength λ are irradiated, there exists at least one lattice spacing d having a value of at least 4.0 Å, the lattice spacing d being obtained from 2dsinθ=nλ (n is a natural number) using a diffraction angle 2θ.SELECTED DRAWING: Figure 1

In a case that a Bragg angle corresponding to the crystal lattice plane is referred to as θ, making an X-ray incident on the sample at a first incident angle @1 of θ−δ or more and θ+δ or less, measuring 1 or 2 peak positions of φ by measuring a diffracted X-ray intensity while rotating the sample in-plane with the φ as a central axis, making an X-ray incident on the sample at a second incident angle ω2 of θ−δ or more and θ+δ or less different from a first incident angle ω1, measuring 1 or 2 peak positions of ω by measuring a diffracted X-ray intensity while rotating the sample in-plane with the φ as a central axis, and calculating the δ from the ω1, the ω2 and the peak positions of the φ obtained by the measurement.

To provide a plated member and a production method thereof.SOLUTION: A plated member relating to the present invention includes a plating film on the outer surface of the plated member. The film is composed of chromium as a primary component using a trivalent chromium bath including at least chromium, carbon, and oxygen. In the plating film, chromium: 60at% or more and carbon: 1at%-30at% are included. In addition, the indentation hardness of the outer surface is 11.1 GPa or more. In the TEM image taken by scanning transmission electron microscopy, the grain diameter of a chromium crystal grain with orientation, which is crystallized in the chromium base metal of microcrystals without orientation, is 15 nm or larger. The ratio of the chromium crystal grain occupied in the base metal is 3% or more. In the electron diffraction pattern by scanning transmission electron microscopy, the film has a diffraction spot at a position where the lattice plane distance d value is 2.0-2.3Å.SELECTED DRAWING: Figure 23