23 results about "Lattice plane" patented technology

The invention provides a three-dimensional neutron diffraction data processing method and system for a single crystal material, and the method comprises the steps: carrying out the rough scanning of a single crystal sample through a pole figure mode, and determining the rotation center of a single crystal sample signal; performing fine scanning at the rotation center to obtain a three-dimensional neutron diffraction signal; decomposing the three-dimensional neutron diffraction signal to obtain a diffraction peak curve and a rocking curve plane; correcting the coordinates of the rocking curve plane; decomposing the corrected rocking curve plane to obtain a rocking curve; and according to the diffraction peak curve and the rocking curve, quantitatively analyzing interplanar spacing and orientation distribution information in the three-position diffraction signal. The method can realize nondestructive characterization of the internal microstructure of the single crystal material, provides accurate data support for research of lattice strain distribution and orientation characteristics, and can realize synchronous characterization analysis of lattice spacing and orientation distribution information.

Disclosed herein is an electrolytic copper foil for a current collector of a secondary battery. The electrolytic copper foil ranges in elongation per unit thickness at room temperature from 1.3 to 2.0% / μm and in I(200) / I(111) at room temperature from 3.4 to 0.5, wherein I(200) / I(111) is a ratio of an intensity of a diffraction peak for (200) lattice plane to an intensity of a diffraction peak for (111) lattice plane on an XRD spectrum for a deposited plane.

A coated cutting tool includes a substrate with a coating including a (Ti,Al)N layer having an overall composition (TixAl1-x)N, 0.34≤x≤0.65. The (Ti,Al)N layer contains columnar (Ti,Al)N grains with an average grain size of from 10 to 100 nm. The (Ti,Al)N layer also includes lattice planes of a cubic crystal structure. The (Ti,Al)N layer shows a pattern in electron diffraction analysis, wherein there is a diffraction signal existing, which is shown as a peak (P) in an averaged radial intensity distribution profile having its maximum within a scattering vector range of from 3.2 to 4.0 nm−1, the full width half maximum (FWHM) of the peak (P) being from 0.8 to 2.0 nm−1.

The present invention provides a control device, a system, a method, and a program, which can effectively utilize the axes of the goniometer of a diffractometer and can perform precise control of the incident angle of the axis even without a special axis structure. The control device controls the posture of a sample and includes: an input unit that receives an input of tilt information indicating the tilt of the sample with respect to the axis; an adjustment amount determination unit that uses the tilt information to determine adjustment amounts of ω values and χ values for correcting the deviation amount between the sample surface normal or the lattice plane normal and the scattering vector with respect to a changing value; and a drive instruction unit that, during X-ray diffraction measurement, drives the goniometer in accordance with the rotation of the axis of the sample based on the determined adjustment amounts of the ω values and the χ values. In this way, the adjustment angle for eliminating the tilt angle of the sample that is not affected by the rotation of the axis can be converted into adjustment amounts of ω values and χ values that are independent of the axis rotation.

This ScAlN laminate includes a substrate, an intermediate layer formed on the substrate and a ScAlN thin film formed on the intermediate layer, and a nearest neighbor distance, which is a distance between atoms closest to each other in a lattice plane parallel to a surface of the intermediate layer, is shorter than the a-axis length of the ScAlN thin film.

The invention pertains to a layered structure (100) comprising a. A first layer (101), wherein i. the first layer (101) comprises a first metal and at least one other chemical element, wherein the at least one other chemical element is preferably at least one further metal, ii. the first layer (101) has a first section (112), wherein the first section (112) has a crystal orientation that lies in a first crystal plane; iii. the Miller index ℓ, used to define the crystal lattice planes, is arranged perpendicular to a surface (108) of the first layer (101); wherein a first angle (111) between the first crystal plane and the (168)-plane is in the range of -18° to 18°, preferably in the range of -12° to 12°, more preferably in the range of -8° to 8°, further preferably in the range of -5° to 5°, and even further preferably in the range of -4° to 4.

A carbon material containing graphite particles. The graphite particles are natural graphite coated with an amorphous carbonaceous substance. When the carbon material is included in an electrode fabricated by adding a binder resin and a dispersion medium to the carbon material to form a slurry, applying the slurry to a metal current collector, drying the applied slurry to form an active material layer on the metal current collector, and then pressing the active material layer such that the active material layer has a density of 1.65 g / cm3, the carbon material has an orientation parameter intensity ratio I(002) / I(110) of from 200 to 1200, where I(110) is a peak intensity corresponding to a lattice plane (110) and I(002) is a peak intensity corresponding to a lattice plane (002), and both I(110) and I(002) are obtained by a wide-angle X-ray diffraction measurement.

The present invention can make a decrease in the accuracy of the direction and position of a subject less prone to occur, and increase the accuracy thereof. An X-ray Talbot imaging device 100 has a radiation irradiation axis in a substantially vertical direction and a lattice plane in a substantially horizontal direction, the X-ray Talbot imaging apparatus 100 comprising a CT rotation shaft 132 to which an imaging jig 131 for fixing a subject in a predetermined direction is attached, and the CT rotation shaft 132 being rotated and fixed in a predetermined direction in a substantially horizontal plane.

A crystal structure analysis in which: each of a plurality of samples are irradiated while the angle of incidence is continuously changed by rotating the crystal, whereby diffraction spot intensity and reliability for a plurality of crystal lattice planes are determined and a data set (Data-1, Data-2, Data-3, . . . , Data-n) is acquired; whether or not to perform merging, which is a process of combining multiple sets of data into one, is determined for each individual set of data on the basis of a merging criterion (e.g., Rint, completeness); merging is performed on data for which merging is to be performed; and a crystal structure is determined according to merged data. A crystal structure analysis result is obtained in a crystal structure analysis method, a crystal structure analysis device, and a crystal structure analysis program in which a crystal structure is determined by data-processing and analyzing a plurality of diffraction profiles.

A structure that includes a Josephson Junction located on a substrate. The Josephson Junction includes a first electrode, a second electrode, and a tunnel junction located between the first electrode and the second electrode. The tunnel junction is located in a recess of the substrate and herein the recess is based on the crystalline lattice of the substrate.

To provide a copper-based composite membrane in which flaky copper powder has high planar density and the flaky copper powder is laminated while being arrayed so as to readily contact with one another, thereby exerting high conductivity and can be manufactured through low-temperature heat treatment.SOLUTION: A copper-based composite membrane includes 70 wt.% or more and 95 wt.% or less of flaky copper powder, where a proportion of relative density to theoretical density is 50% or more and an integrated intensity ratio of a crystal lattice plane (220) to a crystal lattice plane (111) of copper by X-ray diffraction is 1 or more.SELECTED DRAWING: Figure 3

To provide a silicon substrate structure capable of stably growing an epitaxial crystal.SOLUTION: A substrate 1 has a first surface and a second surface 12. The first surface is formed on one side of a silicon (111) lattice plane; the second surface 12 is formed on an opposite side of the silicon (111) lattice plane; a first groove 2 is provided in a first direction D1 on the second surface 12 of the substrate 1; a second groove 3 is provided in a second direction D2 on the second surface 12 of the substrate 1; a third groove 4 is provided in a third direction D3 on the second surface 12 of the substrate 1; the first direction D1 is defined as a direction to a silicon (1-1-1) lattice plane from the silicon (111) lattice plane; the second direction D2 is defined as a direction to a silicon (1-11) lattice plane from a silicon (-11-1) lattice plane; and the third direction D3 is defined as a crystal axis direction of a silicon [1-10].SELECTED DRAWING: Figure 2

To provide a single crystal 4H-SiC substrate having a specific orientation of crystal structures that is set so as to reduce or even eliminate occurrence of cracks or fissures during mechanical processing, and a manufacturing method thereof.SOLUTION: A single crystal 4H-SiC substrate has a longitudinal axis C and a side face parallel to the longitudinal axis and curved at least partially. Crystal structures of the 4H-SiC substrate are oriented so that a line segment that crosses a parallel cleavage surface having at least a prescribed minimum number per unit length with a prescribed shape exists at each position on the side face of a semi-product with respect to the longitudinal axis, and the line segment is defined by a plane that is in contact with the side surface at one point at the position.SELECTED DRAWING: Figure 13B

This invention discloses a method for fabricating a monochromator and a monochromator, belonging to the field of synchrotron radiation technology. The method includes a crystal polishing step, a step of calibrating the intersection line between the lattice plane and the crystal surface and cutting to make the calibrated lattice plane and the crystal surface approximately parallel, a step of polishing the crystal surface to make it completely parallel to the lattice plane, a bonding step, and a detection step. A monochromator is fabricated using this method. This invention utilizes the bonding technology of two perfectly polished crystals and a high-precision crystal polishing method to fabricate a bonded channel-cut monochromator device suitable for perfect X-ray imaging, solving the problems of stability and uneven beam distribution in current monochromators.

The invention pertains to a layered structure (100) comprising a. A first layer (101), wherein i. the first layer (101) comprises a first metal and at least one other chemical element, wherein the at least one other chemical element is preferably at least one further metal, ii. the first layer (101) has a first section (112), wherein the first section (112) has a crystal orientation that lies in a first crystal plane; iii. the Miller index ℓ, used to define the crystal lattice planes, is arranged perpendicular to a surface (108) of the first layer (101); wherein a first angle (111) between the first crystal plane and the (168)-plane is in the range of -18° to 18°, preferably in the range of -12° to 12°, more preferably in the range of -8° to 8°, further preferably in the range of -5° to 5°, and even further preferably in the range of -4° to 4.

The invention pertains to a layered structure (100) comprising a. A first layer (101), wherein i. the first layer (101) comprises a first metal and at least one other chemical element, wherein the at least one other chemical element is preferably at least one further metal, ii. the first layer (101) has a first section (112), wherein the first section (112) has a crystal orientation that lies in a first crystal plane; iii. the Miller index ℓ, used to define the crystal lattice planes, is arranged perpendicular to a surface (108) of the first layer (101); wherein a first angle (111) between the first crystal plane and the (168)-plane is in the range of -18° to 18°, preferably in the range of -12° to 12°, more preferably in the range of -8° to 8°, further preferably in the range of -5° to 5°, and even further preferably in the range of -4° to 4.

The present invention provides a nickel nanowire which is less likely to break due to stress. The present invention relates to a nickel nanowire having a face-centered cubic lattice structure and a crystallite size of 10 nm or less in the direction of (111) lattice plane.

The present invention provides a nickel nanowire, which is resistant to break by stress. The present invention relates to a nickel nanowire having a face-centered cubic lattice structure and a crystallite size in a direction of a (111) lattice plane of 10 nm or less.

The invention relates to a SiC single crystal, a SiC substrate, and a SiC epitaxial wafer. The purpose of the present invention is to provide a SiC single crystal capable of reducing the basal plane dislocation density. In the SiC single crystal according to the present embodiment, lattice planes measured along a first straight line, a second straight line, a third straight line, a fourth straight line, a fifth straight line, and a sixth straight line are each curved in a convex shape, and in the lattice planes measured along the first straight line, the second straight line, the third straight line, the fourth straight line, the fifth straight line, and the sixth straight line, the first straight line, the second straight line, the third straight line, the fourth straight line, the fifth straight line, and the sixth straight line are curved in a convex shape. The first straight line, the second straight line, the third straight line, the fourth straight line, the fifth straight line, and the sixth straight line respectively pass through the center in plan view from the thickness direction and are inclined by 30 degrees one by one with respect to the center.

To provide a photoreceptor with characteristics changed less by repeated use under a low-temperature and low-humidity environment, the photoreceptor suppressing increase of residual potential.SOLUTION: The photoreceptor includes a conductive support (31), an undercoat layer (32) on the conductive support, and a photosensitive layer (33) on the undercoat layer in this order, the undercoat layer containing a nylon resin, and the photoreceptor being characterized in that, when X-rays having a wavelength λ are irradiated, there exists at least one lattice spacing d having a value of at least 4.0 Å, the lattice spacing d being obtained from 2dsinθ=nλ (n is a natural number) using a diffraction angle 2θ.SELECTED DRAWING: Figure 1

In a case that a Bragg angle corresponding to the crystal lattice plane is referred to as θ, making an X-ray incident on the sample at a first incident angle @1 of θ−δ or more and θ+δ or less, measuring 1 or 2 peak positions of φ by measuring a diffracted X-ray intensity while rotating the sample in-plane with the φ as a central axis, making an X-ray incident on the sample at a second incident angle ω2 of θ−δ or more and θ+δ or less different from a first incident angle ω1, measuring 1 or 2 peak positions of ω by measuring a diffracted X-ray intensity while rotating the sample in-plane with the φ as a central axis, and calculating the δ from the ω1, the ω2 and the peak positions of the φ obtained by the measurement.

To provide a plated member and a production method thereof.SOLUTION: A plated member relating to the present invention includes a plating film on the outer surface of the plated member. The film is composed of chromium as a primary component using a trivalent chromium bath including at least chromium, carbon, and oxygen. In the plating film, chromium: 60at% or more and carbon: 1at%-30at% are included. In addition, the indentation hardness of the outer surface is 11.1 GPa or more. In the TEM image taken by scanning transmission electron microscopy, the grain diameter of a chromium crystal grain with orientation, which is crystallized in the chromium base metal of microcrystals without orientation, is 15 nm or larger. The ratio of the chromium crystal grain occupied in the base metal is 3% or more. In the electron diffraction pattern by scanning transmission electron microscopy, the film has a diffraction spot at a position where the lattice plane distance d value is 2.0-2.3Å.SELECTED DRAWING: Figure 23

The invention relates to a silicon substrate structure. The silicon substrate structure comprises a substrate, a first groove, a second groove and a third groove, the substrate comprises a first surface and a second surface, the first surface is formed on one side of a silicon (111) lattice plane, and the second surface is formed on the other opposite side of the silicon (111) lattice plane; the first groove is arranged on the second surface of the substrate along a first direction; the second groove is arranged on the second surface of the substrate along a second direction; the third groove is arranged on the second surface of the substrate along a third direction; wherein the first direction is defined as a direction from a silicon (111) lattice plane to a silicon (1-1-1) lattice plane, the second direction is defined as a direction from a silicon (-11-1) lattice plane to a silicon (1-11) lattice plane, and the third direction is defined as an axial direction of a silicon [1-10] crystal orientation. According to the silicon substrate structure, cracks can be reduced in the epitaxial process, the uniformity is improved, and the production yield of an epitaxial film is further improved.