6 results about "Lattice plane" patented technology

A crystal structure analysis in which: each of a plurality of samples are irradiated while the angle of incidence is continuously changed by rotating the crystal, whereby diffraction spot intensity and reliability for a plurality of crystal lattice planes are determined and a data set (Data-1, Data-2, Data-3, . . . , Data-n) is acquired; whether or not to perform merging, which is a process of combining multiple sets of data into one, is determined for each individual set of data on the basis of a merging criterion (e.g., Rint, completeness); merging is performed on data for which merging is to be performed; and a crystal structure is determined according to merged data. A crystal structure analysis result is obtained in a crystal structure analysis method, a crystal structure analysis device, and a crystal structure analysis program in which a crystal structure is determined by data-processing and analyzing a plurality of diffraction profiles.

A structure that includes a Josephson Junction located on a substrate. The Josephson Junction includes a first electrode, a second electrode, and a tunnel junction located between the first electrode and the second electrode. The tunnel junction is located in a recess of the substrate and herein the recess is based on the crystalline lattice of the substrate.

To provide a single crystal 4H-SiC substrate having a specific orientation of crystal structures that is set so as to reduce or even eliminate occurrence of cracks or fissures during mechanical processing, and a manufacturing method thereof.SOLUTION: A single crystal 4H-SiC substrate has a longitudinal axis C and a side face parallel to the longitudinal axis and curved at least partially. Crystal structures of the 4H-SiC substrate are oriented so that a line segment that crosses a parallel cleavage surface having at least a prescribed minimum number per unit length with a prescribed shape exists at each position on the side face of a semi-product with respect to the longitudinal axis, and the line segment is defined by a plane that is in contact with the side surface at one point at the position.SELECTED DRAWING: Figure 13B

This invention discloses a method for fabricating a monochromator and a monochromator, belonging to the field of synchrotron radiation technology. The method includes a crystal polishing step, a step of calibrating the intersection line between the lattice plane and the crystal surface and cutting to make the calibrated lattice plane and the crystal surface approximately parallel, a step of polishing the crystal surface to make it completely parallel to the lattice plane, a bonding step, and a detection step. A monochromator is fabricated using this method. This invention utilizes the bonding technology of two perfectly polished crystals and a high-precision crystal polishing method to fabricate a bonded channel-cut monochromator device suitable for perfect X-ray imaging, solving the problems of stability and uneven beam distribution in current monochromators.

The present invention provides a nickel nanowire, which is resistant to break by stress. The present invention relates to a nickel nanowire having a face-centered cubic lattice structure and a crystallite size in a direction of a (111) lattice plane of 10 nm or less.

The invention relates to a SiC single crystal, a SiC substrate, and a SiC epitaxial wafer. The purpose of the present invention is to provide a SiC single crystal capable of reducing the basal plane dislocation density. In the SiC single crystal according to the present embodiment, lattice planes measured along a first straight line, a second straight line, a third straight line, a fourth straight line, a fifth straight line, and a sixth straight line are each curved in a convex shape, and in the lattice planes measured along the first straight line, the second straight line, the third straight line, the fourth straight line, the fifth straight line, and the sixth straight line, the first straight line, the second straight line, the third straight line, the fourth straight line, the fifth straight line, and the sixth straight line are curved in a convex shape. The first straight line, the second straight line, the third straight line, the fourth straight line, the fifth straight line, and the sixth straight line respectively pass through the center in plan view from the thickness direction and are inclined by 30 degrees one by one with respect to the center.