109 results about "Lattice plane" patented technology

Crystal orientation planes exist randomly in a crystalline silicon film manufactured by a conventional method, and the orientation ratio is low with respect to a specific crystal orientation. A semiconductor film having a high orientation ratio for the {101} lattice plane is obtained if crystallization of an amorphous semiconductor film, which has silicon as its main constituent and contains from 0.1 to 10 atom % germanium, is performed after introduction of a metal element. A TFT is manufactured utilizing the semiconductor film.

Disclosed herein are a graphene hybrid material and a method for preparing the graphene hybrid material, the graphene hybrid material comprising: a matrix having lattice planes disconnected on a surface thereof; and layers of graphene which are epitaxially grown along the lattice planes disconnected on the surface of the matrix such that the layers of graphene are oriented perpendicularly to the matrix, and which are spaced apart from each other and layered on the matrix in the same shape. The graphene hybrid material can be usefully used in the fields of next-generation semiconductor devices, biosensors, electrochemical electrodes and the like.

The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not larger than 10 atomic % while adding a metal element thereto, wherein not smaller than 20% of the lattice plane {101} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, not larger than 3% of the lattice plane {001} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, and not larger than 5% of the lattice plane {111} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film as detected by the electron backscatter diffraction pattern method.

Using a graphite material capable of intercalating and de-intercalating lithium ions as the anode, the peak intensity ratio R(=I(110)/I(004)) corresponding to lattice planes (110) and (004) of graphite material obtained by wide angle X-ray diffraction measurement of this anode is in a range of 0.05 to 0.5. Hence, edges of graphite crystals exist adequately on the electrode surface at the interface to the electrolyte, and therefore intercalation of lithium proceeds smoothly, polarization at the time of charging and discharging is suppressed, and a nonaqueous electrolyte secondary battery excellent in high rate discharging characteristic is obtained. The obtained battery is small in deterioration if charging and discharging are repeated.

A high orientation layered dihydroxy compound metal oxide (LDHs) film and biomimetic synthesis method. Said film is grown on high molecular base material, whose lattice plane (00I) (or ab plane) being normal to surface of base unit with high orientation, compact and film thickness of 0.5-5 micrometer. Said method contains horizontal suspension setting the molecular base unit with surface sulfonation film base unit in solution containing urea and relative metal salt, controlling anion releasing by controlling ureolysis speed through controlling reaction temperature and time.

An alkali niobate-based piezoelectric/electrostrictive ceramics sintered body including, as a main crystal phase, a perovskite type oxide containing at least one type of element selected from the group consisting of Li, Na and K as A site constituent elements and at least one type of element selected from the group consisting of Nb and Ta as B site constituent elements. The number of lattice-strained layers of the piezoelectric/electrostrictive ceramics sintered body is preferably small. A diffuse scattering intensity ratio, which is a ratio of an intensity of diffuse scattering by a lattice-strained layer present near a domain wall to a sum of an X-ray diffraction intensity of a first lattice plane and that of a second lattice plane different in interplanar spacing from the first lattice plane due to crystallographic symmetry reduction is preferably 0.5 or lower.

An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.

A silicon single crystal film having a crystal plane as its principal plane, the crystal plane being inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes is used as a pellicle film. The silicon single crystal having such a crystal plane as its principal plane has effective bond density and Young's modulus thereof which are about 40% to about 50% higher than those of a silicon single crystal with <100> orientation, and therefore a cleavage and crack do not easily occur. Moreover, the silicon single crystal has a high chemical resistance such as hydrofluoric acid resistance, and hardly causes an etch pit and void. Accordingly, the present invention can provide a pellicle comprising a pellicle film for EUV having high transmission, and excellent mechanical and chemical stability, as well as having a high yield, and being practical also in cost.

A dome assembly (50) adapted for use with a missile (32) having a longitudinal axis (42) parallel to a thrust vector thereof. The inventive dome (50) includes a crystal (30, 50) having a crystallographic structure that includes a plurality of planes (12, 14, 16), one of said planes (14) being more susceptible to failure than one or more of the other planes (12, 16). A surface around a missile sensor provides a place for mounting the crystal (30, 50) so that said plane susceptible to failure (14) faces approximately opposite to that of a positive velocity vector (34) of said missile (32). In a more specific embodiment, the crystal (30, 50) is a sapphire crystal (30, 50) having a crystallographic structure that includes positive n-planes (12), positive r-planes (14), and a c-plane (16). By design at nominal conditions, an r-plane (14) is approximately bisected by a plane formed by the normal of the c-plane (16) and a wind flow vector (36) parallel to a thrust vector of said missile (32). A turntable (not shown) orients the sensor dome (50) so that a first r-plane (14) faces leeward of impinging airflow (36) corresponding to the wind flow vector (36). An r-plane normal (38) of a second r-plane forms an angle of approximately 60 degrees with respect to impinging airflow (36) that is approximately parallel to the thrust vector of the missile (32). The turntable includes a motor (not shown) for strategically orienting the lattice planes (12, 14, 16) of the dome (50) so as to maximize the strength of the dome (50) with respect to applied stresses.

PCT No. PCT/RU96/00102 Sec. 371 Date Apr. 13, 1998 Sec. 102(e) Date Apr. 13, 1998 PCT Filed Apr. 29, 1996 PCT Pub. No. WO96/35613 PCT Pub. Date Nov. 14, 1996The group of inventions pertains to rocket technology, in particular guided rockets, and can be used in various types and classes of rocket with lattice control surfaces, and in the rocket control surfaces. The rocket is of a standard aerodynamic design and comprises a body (1) with a motor assembly, a guidance and control system apparatus, fixed wings (2) and movable lattice control surfaces (3) of a control system, said control surfaces being spaced evenly on the outer body along the latter's longitudinal axis. In the reinforcement frame, side members (18, 19) are designed so as to narrow towards the end region of the control surface; the root surface (22) is broader than the end surface (23), the thickness of the lattice planes (24, 25) narrowing either continuously or in steps towards the end region.

A method is used for producing an SiC volume monocrystal by sublimation growth. Before the beginning of growth, an SiC seed crystal is arranged in a crystal growth region of a growth crucible and powdery SiC source material is introduced into an SiC storage region of the growth crucible. During the growth, by sublimation of the powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal having a central center longitudinal axis grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is heated substantially without bending during a heating phase before the beginning of growth, so that an SiC crystal structure with a substantially homogeneous course of lattice planes is provided in the SiC seed crystal.

A pellicle film of a silicon single crystal film and a base substrate supporting the pellicle film are formed of a single substrate using an SOI substrate. The base substrate is provided with an opening whose ratio in area to an exposure region when a pellicle is used on a photomask (an open area ratio) is 60% or more, and provided with a reinforcing frame in a non-exposure region of the base substrate. Since the pellicle film and the base substrate supporting the pellicle film are formed of the single substrate (an integrated structure), and the base substrate is provided with the reinforcing frame, the effect of increased strength is obtained. Moreover, a principal plane of a silicon single crystal film is a crystal plane inclined at 3 to 5° from any lattice plane belonging to {100} planes or {111} planes.

An ultra-small angle X-ray scattering measuring apparatus includes a detector for detecting X-rays emitted from a sample, an X-ray collimating mirror arranged between the X-ray real focus and the sample, a monochromator arranged between the X-ray collimating mirror and the sample and an analyzer arranged between the sample and the detector. The X-ray collimating mirror includes a pair of X-ray mirrors that are arranged orthogonally relative to each other. The X-ray mirrors are multilayer film mirrors and their X-ray reflection surfaces are paraboloidal. The interplanar spacing of lattice planes of each of the multilayer films is continuously changed along the paraboloid so as to meet the Bragg's condition. The monochromator and the analyzer are formed by using a channel-cut crystal. The analyzer is driven to rotate for scanning around a 2θ-axial line and diffracted rays reduced to a spectrum by the analyzer are detected by the detector.

In an X-ray diffraction method using the parallel beam method, an X-ray parallel beam (24) is incident on a sample (26), and diffracted X-rays (28) from the sample (26) are reflected at a mirror (18) and thereafter detected by an X-ray detector (20). The reflective surface (19) of the mirror (18) has a shape of an equiangular spiral that has a center located on the surface of the sample (26). A crystal lattice plane that causes reflection is parallel to the reflective surface (19) at any point on the reflective surface (19). The X-ray detector (20) is one-dimensional position sensitive in a plane parallel to the diffraction plane. A relative positional relationship between the mirror (18) and the X-ray detector (20) is determined so that reflected X-rays (40) from different points on the reflective surface (19) of the mirror (18) reach different points on the X-ray detector (20) respectively. This X-ray diffraction method is superior in angular resolution, and is small in X-ray intensity reduction, and is simple in structure.

In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of β type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in β type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m^1/2 or higher and the thermal conductivity of 90 W/m·K or higher can be attained.