2 results about "Amorphous semiconductors" patented technology

This invention relates to a heterostructure ultraviolet photoelectric synaptic transistor, its fabrication method, and its applications. The transistor's structure, from top to bottom, consists of a glass substrate, a gate dielectric layer, an active layer, and a source-drain electrode layer. It also includes a gate electrode disposed within the gate dielectric layer and in contact with the glass substrate. The active layer comprises an indium tin zinc oxide layer and a magnesium zinc oxide layer stacked sequentially. This invention leverages the superior electron mobility and channel stability of indium tin zinc oxide amorphous semiconductors and the intrinsic absorption characteristics of magnesium zinc oxide in the ultraviolet band to achieve a more sensitive transient response and precise synaptic weight update function. This has significant application value for simulating biological visual perception and the development of neuromorphic electronics.

The objective is to provide solar cells with good power generation performance and in the desired size and shape. [Solution] A solar cell that solves the above problem includes an n-type or p-type crystalline silicon layer having a first main surface and a second main surface which is the back surface thereof, an amorphous semiconductor layer or passivation layer disposed adjacent to the first main surface of the crystalline silicon layer, and an electrode layer disposed on the first main surface of the crystalline silicon layer. At least one side surface of the crystalline silicon layer has a first region that is continuous from the first main surface side and is covered by the amorphous semiconductor layer or the passivation layer.