This invention discloses a deposition apparatus based on
diamond semiconductor wafers, relating to the field of
diamond deposition technology. In this invention, a
waveguide channel is provided within the
waveguide assembly. A
cavity wall assembly one is mounted on top of the cavity bottom
assembly and includes a cutoff plate and a
gas supply pipe assembly. A
cavity wall assembly two is sealed to
cavity wall assembly one to form an anti-wave cavity and a
resonant cavity. When cavity wall assembly two is sealed to cavity wall assembly one, the cutoff plate is located within the
resonant cavity. The deposition substrate is located within the anti-wave cavity and directly below the cutoff plate. Microwaves generate a resonant wave between the cutoff plate and the deposition substrate. This resonant wave is used to resonate with the
mixed gas to generate a
plasma ball. This invention uses a hydraulic rod to ensure the
movement control of the lower cavity wall assembly two, allowing cavity wall assembly two to achieve tight docking or separation from cavity wall assembly one. This enables rapid loading and unloading of the deposition substrate after
diamond deposition, preventing burns caused by the
internal temperature of the deposition cavity and facilitating efficient diamond removal.