9 results about "Diamond deposition" patented technology

The invention discloses a diamond chemical deposition process, and relates to the technical field of diamond deposition. Comprising the following steps: pre-treating a workpiece in an earlier stage, clamping a substrate in a furnace, vacuumizing a heating furnace cavity, replacing gas in the cavity, heating, preheating, stabilizing the gas in the cavity, performing vapor deposition growth on diamond, depositing a layer of uniform diamond on two surfaces of the substrate in the heating cavity, cooling, releasing pressure, protecting the gas in the cavity, and post-treating a diamond sample. According to the device, the positions of all the substrates can be limited through the clamping blocks, the edges of all the substrates can be shielded through the clamping blocks, airflow in the heating cavity can be evenly stirred through a second rotating shaft, and diamond materials in the heating cavity can be evenly sprayed through the second rotating shaft; the thickness, the grain size and the density of the double-sided deposited diamond layer are consistent, the problem of stress asymmetry caused by single-sided deposition can be avoided, the front and back surfaces of the substrate do not need to be respectively deposited twice, and the technological process is shortened.

The invention discloses a semiconductor chip adopting a diamond heat sink and a preparation method of the semiconductor chip, and the semiconductor chip comprises a power chip which is a high-power semiconductor chip with high energy density and high heating; the heat conduction substrate is a common heat sink substrate; the diamond deposition layer is a patterned diamond film deposited on the heat conduction substrate; the transition layer is arranged on the side, away from the heat conduction substrate, of the diamond deposition layer and used for enhancing the binding force and preventing interface reaction; and the graphical metallization layer is arranged on one side, far away from the diamond deposition layer, of the transition layer and is used for realizing welding or eutectic bonding with the power chip. A high-efficiency heat conduction path is adopted, a thick metal bonding area directly located below the chip provides a low-thermal-resistance vertical heat conduction channel, and a graphical stress buffer structure ensures transverse heat conduction and avoids huge thermal stress caused by full coverage of metal at the same time.

The utility model relates to the technical field of diamond growth equipment, in particular to multi-chamber diamond growth equipment integrated with a doping process. The device comprises a shell, the interior of the shell is divided into a plurality of growth cavities through a plurality of partition plates, a front door is installed in front of each growth cavity, a rotating assembly is installed at the bottom in each growth cavity, a base plate is installed on each rotating assembly, and a heating structure is arranged in each base plate; an air inlet pipe connected to external air supply equipment and a vacuum pipe connected to external vacuum equipment are connected to the rear part of the shell, the vacuum pipe and the air inlet pipe are respectively connected to each growth cavity through branch pipes, and a microwave unit is arranged on each branch pipe of the air inlet pipe; according to the utility model, through the design of a plurality of independent chambers, the common gas inlet and vacuum equipment, each chamber can be independently controlled to operate, and the rotating assembly is designed, so that the diamond can be driven to continuously rotate at a low speed in the deposition and growth process of the diamond, the uniformity of contact with gas is improved, the non-uniform doping of the diamond is prevented, and the product quality is ensured.

Methods for forming a polycrystalline diamond compact (PDC) drill bit from catalyst-free synthesized polycrystalline diamonds are described. The polycrystalline diamonds are deposited within a mold. In some cases, a matrix body material is deposited within the mold, and an infiltration process is performed to bond the polycrystalline diamonds to the matrix body material to form the PDC drill bit. In some cases, a drill bit body is formed within the mold, and forming the drill bit body within the mold includes depositing a layer of matrix body material particles within the mold, depositing an adhesive ink within the mold, and curing the adhesive ink. In some cases, a sintering process is performed after forming the drill bit body to remove at least a portion of the adhesive ink and increase a density of the drill bit body to form the PDC drill bit.

[Solution] The diamond system includes a glass substrate having a first surface and a second surface, the second surface being chemically modified by ion substitution, and a CVD-deposited diamond layer may be present on the first surface or on an additional surface or edge.

The invention discloses a longitudinal spiral HFCVD diamond deposition system and a deposition method.The deposition system comprises a plurality of spiral lamp filaments located on the side of a base body, the spiral lamp filaments are arranged in the vertical direction and distributed at equal intervals in the transverse direction, the two ends of each spiral lamp filament are connected with a pre-stretching structure, and the two ends of each spiral lamp filament are connected with the corresponding pre-stretching structure; one side of the spiral filament away from the substrate is connected with the supporting structure; the pre-stretching structure comprises a plurality of molybdenum elastic pieces distributed at equal intervals in the transverse direction, one end of each molybdenum elastic piece is connected with the end of the spiral lamp filament, the other end of each molybdenum elastic piece is installed on the insulating piece through a fixing screw, and gaps with adjustable sizes are formed between the molybdenum elastic pieces and the insulating piece. The supporting structure comprises a plurality of supporting molybdenum sheets which are distributed at equal intervals in the vertical direction. According to the longitudinal spiral type HFCVD diamond deposition system and method, the deposition performance is remarkably improved through a longitudinal spiral type filament structure, the system reliability and the process stability are enhanced, and large-area uniform deposition can be achieved.

This invention discloses a deposition apparatus based on diamond semiconductor wafers, relating to the field of diamond deposition technology. In this invention, a waveguide channel is provided within the waveguide assembly. A cavity wall assembly one is mounted on top of the cavity bottom assembly and includes a cutoff plate and a gas supply pipe assembly. A cavity wall assembly two is sealed to cavity wall assembly one to form an anti-wave cavity and a resonant cavity. When cavity wall assembly two is sealed to cavity wall assembly one, the cutoff plate is located within the resonant cavity. The deposition substrate is located within the anti-wave cavity and directly below the cutoff plate. Microwaves generate a resonant wave between the cutoff plate and the deposition substrate. This resonant wave is used to resonate with the mixed gas to generate a plasma ball. This invention uses a hydraulic rod to ensure the movement control of the lower cavity wall assembly two, allowing cavity wall assembly two to achieve tight docking or separation from cavity wall assembly one. This enables rapid loading and unloading of the deposition substrate after diamond deposition, preventing burns caused by the internal temperature of the deposition cavity and facilitating efficient diamond removal.

The present application belongs to the technical field of silicon crystal coating diamond, and particularly relates to a silicon crystal pretreatment method and device for diamond deposition, which comprises the following steps: step S10: washing the dust on the surface of the silicon crystal with pure water; step S20: soaking the silicon crystal in hydrofluoric acid and then rinsing the acid away with a large amount of pure water; step S30: drying the surface of the silicon crystal substrate; step S40: dropping DMSO on the surface of the silicon crystal at 40-50 degrees, and keeping still for more than 1 hour; step S50: rinsing the silicon crystal with pure water again; and step S60: placing the silicon crystal on a centrifuge, spinning at a medium or low speed, and spinning dry, thus completing the pretreatment. The present method corrodes the oxide film on the surface of the silicon by means of hydrofluoric acid soaking, so that the silicon surface is easier to nucleate. Meanwhile, the hydrofluoric acid modifies the silicon surface by means of pitting, so that water is easy to stay on the surface of the silicon crystal, and the silicon crystal is easy to clean.

The invention provides a method for depositing a low-roughness diamond passivation layer on a GaN wafer. The method comprises the following steps: carrying out silicon nitride deposition on a silicon-based GaN wafer to obtain the silicon-based GaN wafer loaded with a silicon nitride dielectric layer; the preparation method comprises the following steps: immersing a silicon nitride dielectric layer into a modified diamond nucleation liquid A to adsorb a diamond seed crystal, carrying out primary microwave plasma chemical vapor deposition after spin coating, and forming a diamond passivation layer on the surface of the silicon nitride dielectric layer adsorbed with a diamond seed layer to obtain a silicon-based GaN wafer sequentially loaded with the diamond passivation layer and the silicon nitride layer; and immersing the wafer into the modified diamond nucleation liquid B, and carrying out diamond deposition after the wafer adsorbs a diamond seed crystal through spin coating to obtain the silicon-based GaN wafer loaded with a diamond passivation layer-silicon nitride layer with a certain thickness. According to the method, the diamond seed crystal is introduced to the surface of the wafer for multiple times, grain coarsening in the diamond deposition process is inhibited, and the polycrystalline diamond passivation layer with low surface roughness is prepared on the GaN wafer.