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Copper-based mosaic structure interface diamond coating and preparation method and application thereof

A diamond coating and mosaic structure technology, applied in metal material coating process, coating, electrolytic coating and other directions, can solve the problems of insignificant increase in thermal conductivity, increase in interface thermal resistance, etc., and achieve increased bonding force and interface contact. The effect of increased area and good bonding properties

Inactive Publication Date: 2011-01-05
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although pre-depositing a transition layer of carbide-forming elements (such as Cr, W, Mo, Ti, etc.) on the copper substrate can greatly improve the bonding force of the diamond film / substrate, but after adding the transition layer, the diamond film and copper The interface thermal resistance is greatly increased, and the overall thermal conductivity is not significantly improved

Method used

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  • Copper-based mosaic structure interface diamond coating and preparation method and application thereof
  • Copper-based mosaic structure interface diamond coating and preparation method and application thereof
  • Copper-based mosaic structure interface diamond coating and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Step 1: Prepare coarse sand + Cu reinforcement + fine sand composite coating:

[0041] (1) Prepare sand-coated copper plating solution: take 27 grams of citric acid and 6 grams of basic copper carbonate and dissolve them in a beaker A containing 80 ml of distilled water in turn, take 3.6 grams of ammonium bicarbonate and 3.0 grams of ethylenediaminetetraacetic acid in turn Dissolve in beaker B filled with 40ml of distilled water. After the dissolution is complete, slowly add the solution in beaker B to beaker A. Take 9.0 grams of potassium sodium tartrate and add it to beaker A. Measure 30 ml of formamide and add it to beaker A. Adjust the pH value to 8.3 to 9.5 with sodium, prepare 200ml of sanded copper plating solution, and divide the prepared sanded copper plating solution into A beaker and B beaker, each of which is 100ml, and set aside;

[0042] (2) Configure the coarse and sandy composite plating solution: boil diamond particles with a particle size of W10 (9-10 ...

Embodiment 2

[0057] Step 1: Prepare coarse sand + Cu reinforcement + fine sand composite coating:

[0058] (1) Prepare sand-coated copper plating solution: take 27 grams of citric acid and 6 grams of basic copper carbonate and dissolve them in a beaker A containing 80 ml of distilled water in turn, take 3.6 grams of ammonium bicarbonate and 3.0 grams of ethylenediaminetetraacetic acid in turn Dissolve in beaker B filled with 40ml of distilled water. After the dissolution is complete, slowly add the solution in beaker B to beaker A. Take 9.0 grams of potassium sodium tartrate and add it to beaker A. Measure 30 ml of formamide and add it to beaker A. Adjust the pH value to 8.3 to 9.5 with sodium, prepare 200ml of sanded copper plating solution, and divide the prepared sanded copper plating solution into A beaker and B beaker, each of which is 100ml, and set aside;

[0059] (2) Configure the coarse and sandy composite plating solution: boil diamond particles with a particle size of W15 (14-15...

Embodiment 3

[0071] Step 1: Prepare coarse sand + Cu reinforcement + fine sand composite coating:

[0072] (1) Prepare sand-coated copper plating solution: take 27 grams of citric acid and 6 grams of basic copper carbonate and dissolve them in a beaker A containing 80 ml of distilled water in turn, take 3.6 grams of ammonium bicarbonate and 3.0 grams of ethylenediaminetetraacetic acid in turn Dissolve in beaker B filled with 40ml of distilled water. After the dissolution is complete, slowly add the solution in beaker B to beaker A. Take 9.0 grams of potassium sodium tartrate and add it to beaker A. Measure 30 ml of formamide and add it to beaker A. Adjust the pH value to 8.3 to 9.5 with sodium, prepare 200ml of sanded copper plating solution, and divide the prepared sanded copper plating solution into A beaker and B beaker, each of which is 100ml, and set aside;

[0073] (2) Configure the coarse and sandy composite plating solution: boil diamond particles with a particle size of W10 (9-10 ...

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Abstract

The invention discloses a copper-based mosaic structure interface diamond coating and a preparation method and application thereof. The coating consists of a copper-diamond composite coarse sanding plating layer, a copper reinforcing layer, a copper-diamond composite thin sanding layer and a CVD diamond epitaxial growth layer from the bottom to the top. The preparation method comprises the following steps of: 1, depositing the copper-diamond composite coarse sanding plating layer, the copper reinforcing layer and the copper-diamond composite thin sanding layer on a copper matrix in turn to obtain a workpiece deposited with the copper-diamond composite plating layer; and 2, performing homogeneous epitaxial growth on the diamond exposed on the surface of the workpiece deposited with the copper-diamond composite plating layer in a CVD diamond deposition system to obtain the continuous diamond coating. The copper-based mosaic structure interface diamond coating has the advantages of high purity, few impurities, low thermal stress and firm combination with the matrix, and is an ideal choice of a microelectronic heat sink material.

Description

technical field [0001] The invention belongs to the technical field of diamond film heat sinks, and in particular relates to a copper-based mosaic structure interface diamond coating and a preparation method and application thereof. Background technique [0002] The diamond coating on the mosaic structure interface means that the diamond part penetrates into the substrate, and the substrate and the diamond coating interlock on the interface, which can greatly improve the bonding force between the diamond film and the substrate. [0003] With the rapid development of microelectronics technology, the packaging density of semiconductor integrated circuits is getting higher and higher. High-power integrated circuits, semiconductor light-emitting devices, laser diode arrays, and microwave devices often limit their power level improvements due to heat dissipation. Existing electronic heat sink materials, such as Cu / Invar / Cu (CIC), Cu / Mo / Cu (CMC), Ni / Mo / Ni and other mosaic materia...

Claims

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Application Information

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IPC IPC(8): C23C28/00C25D15/00C23C16/27C23C16/02
Inventor 邱万奇刘仲武钟喜春余红雅曾德长贺礼贤
Owner SOUTH CHINA UNIV OF TECH
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