Temperature control device for substrate tables of MPCVD equipment and temperature control method

A temperature control device and a technology for a substrate stage, which are applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of uncontrollable heat dissipation of the substrate stage, uncontrollable temperature change of the substrate stage, and the like. Conducive to mass production, consistent growth rate and quality, and basically consistent growth rate

Inactive Publication Date: 2019-03-01
CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The invention patent of the existing technology 201610256111.8 "Method for preparing diamond film by using MPCVD intermediate frequency induction auxiliary heating", configures a heater through the substrate stage, and controls the temperature of the substrate by heating; it controls the temperature of the entire substrate

Method used

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  • Temperature control device for substrate tables of MPCVD equipment and temperature control method
  • Temperature control device for substrate tables of MPCVD equipment and temperature control method
  • Temperature control device for substrate tables of MPCVD equipment and temperature control method

Examples

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example 1

[0031] Refer to attached Figure 1-Figure 5 , the temperature control device of the present invention comprises a central circular substrate stage and a plurality of concentric annular substrate stages, the circular substrate stage and the plurality of concentric annular substrate stages have the same central axis, adjacent The distance between the substrate stages is 1mm, and each substrate stage is equipped with a separate cooling channel (including water inlet and outlet channels). The chip platform cooling medium cooling flow channel surrounds the annular substrate platform, the water inlet and the water outlet are close to each other, the water inlet is connected to the water pipe from bottom to top, and the water outlet is connected to the water pipe from top to bottom. The cooling medium cooling flow The channel can control the cooling speed of the substrate table by controlling the flow rate of the cooling medium from 0L / min to 10L / min. Each cooling medium is connecte...

example 2

[0036]The temperature control device of the present invention comprises a circular substrate stage located in the center and a plurality of concentric annular substrate stages, the circular substrate stage and the plurality of concentric annular substrate stages have the same central axis, and adjacent substrate stages The distance between the stages is 1 mm, and each substrate stage is equipped with a separate cooling medium cooling flow channel, which can control the cooling rate of the substrate stage by controlling the flow rate of the cooling medium.

[0037] It also includes a gas source, the gas (air) in the gas source passes into the cooling medium cooling channel, and the cooling medium cooling channel can control the cooling of the substrate table by controlling the flow rate of gas mixed into the cooling medium speed.

[0038] The annular substrate stage cooling medium cooling passage surrounds the annular substrate stage, and the circular substrate stage cooling me...

example 3

[0042] The temperature control device of the present invention comprises a circular substrate stage located in the center and a plurality of concentric annular substrate stages, the circular substrate stage and the plurality of concentric annular substrate stages have the same central axis, and adjacent substrate stages The distance between the stages is 1 mm, and each substrate stage is equipped with a separate cooling medium cooling flow channel, which can control the cooling rate of the substrate stage by controlling the flow rate of the cooling medium.

[0043] It also includes a gas source, the gas (air) in the gas source passes into the cooling medium cooling channel, and the cooling medium cooling channel can control the cooling of the substrate table by controlling the flow rate of gas mixed into the cooling medium speed.

[0044] The annular substrate stage cooling medium cooling passage surrounds the annular substrate stage, and the circular substrate stage cooling m...

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Abstract

The invention discloses a temperature control device for substrate tables of MPCVD equipment. The temperature control device comprises the circular substrate table located at the center and the multiple concentric annular substrate tables, the same central shaft is arranged between the circular substrate table and the multiple concentric annular substrate tables, the spacing distance between everytwo adjacent substrate table is 1-10 mm, each substrate table is provided with a separate cooling water path, and the cooling water paths can control the cooling speeds of the substrate tables by controlling the flow rate and the flow of injected cooling water. By controlling the temperatures of the substrate tables, the temperatures of substrates in the diamond growing process are regulated andcontrolled, and then the temperatures of base plates are controlled in the diamond deposition process. In the diamond growing process, the surface temperatures of diamonds are controlled by controlling heat dissipation, so that the surface temperatures of all the diamonds in the deposition process are approximate, in this way, the growing rates and the quality of the diamonds produced at the samebatch are consistent, and batch production is facilitated.

Description

technical field [0001] The invention relates to the field of MPCVD (microwave plasma chemical vapor deposition) equipment, in particular to a device and method for controlling the temperature of a substrate table of an MPCVD equipment. Background technique [0002] MPCVD equipment is a common vapor deposition equipment, especially suitable for diamond production, and deposits diamond on the substrate surface on the substrate table through plasma. In order to achieve mass production, substrates (such as diamond single wafers) are placed in an array on the substrate stage. In order to achieve uniform deposition of diamond on the surface of each substrate, it is required that the temperature of the upper surface of each substrate during the entire growth process be kept as consistent as possible. However, in the diamond deposition process when the diamond film is prepared by MPCVD equipment, ideally, the plasma form is axisymmetric (see Figure 5 ), the plasma in the central re...

Claims

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Application Information

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IPC IPC(8): C23C16/46C23C16/511
CPCC23C16/463C23C16/511
Inventor 黄翀彭琎
Owner CHANGSHA ADVANCED MATERIALS IND RES INST CO LTD
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