Chemical vapor diamond deposition device

A chemical vapor deposition and diamond technology, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., to achieve the effect of increased structure, increased ionization rate, and clear grain facets

Inactive Publication Date: 2010-09-15
晏双利
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  • Abstract
  • Description
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Problems solved by technology

[0004] In the prior art, there has not been a device that combines the Hall ion s

Method used

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Embodiment Construction

[0012] The specific implementation manner of the technical solution of the present invention will be described below in conjunction with the accompanying drawings.

[0013] A chemical vapor deposition diamond device of the present invention is an improvement made for the shortcomings of the existing device that the diamond synthesized contains more amorphous carbon, larger crystal particles, and insufficient compactness. A chemical vapor deposition diamond device of the present invention includes a vacuum chamber 1, a vacuum obtaining system, a cooling system 2, a gas path 3, a hot wire 4, a mechanical rotating mechanism 5, a base 6, a control system and a power supply, etc., and the device also includes A Hall ion source 7, the Hall ion source consists of a shielding cover 71, an anode 72, a magnet 73, a cathode filament 74, a cathode filament lead terminal 75, an air path 76, a bracket 77, a cooling water path 78, and a fastening nut 79 and power supplies. Such as Figure ...

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Abstract

The invention belongs to the chemical vapor deposition field, in particular to a device of a hot wire chemical vapor diamond deposition device. The device comprises a vacuum chamber, a vacuum obtaining system, a cooling system, an air circuit, a hot wire, a mechanical rotating mechanism, a base platform, a control system, a power supply, and a Hall ion source, wherein the Hall ion source is fixedly installed at the top of the vacuum chamber, the end part of the Hall ion source is installed in the vacuum chamber, the bottom of the Hall ion source is installed at the outside of the vacuum chamber, connected to an anode power supply, the air circuit and a cooling water channel and hermetically communicated with the vacuum chamber, and a hole is arranged at the top of the vacuum chamber and used for connecting a cathode power supply and sealing. The device improves the ionization proportion of reaction gas, increases the synthesized diamond SP3 structure, reduces the resistance of a heater strip by 30-35%, has clear crystal grain facet and compact structure, and greatly improves the quality of the synthesized diamond.

Description

technical field [0001] The invention belongs to the field of chemical vapor deposition, in particular to a device for hot wire chemical vapor deposition of diamond. Background technique [0002] At present, the methods of chemical vapor deposition diamond (CVD diamond) mainly include hot wire method, microwave method, plasma spray method and so on. The existing hot wire CVD diamond device is mainly composed of vacuum chamber, power supply, vacuum system and control system, such as figure 1 shown. It mainly includes vacuum chamber, vacuum obtaining equipment, hot wire frame and power supply, cooling water and refrigeration equipment, gas circuit, mechanical rotating mechanism, control system, etc. Its working principle is: under a certain low pressure condition, the heating wire is heated, and the reaction gas (such as methane / ethanol / hydrogen, etc.) is introduced into the vacuum chamber, and the gas is decomposed and excited by pyrolysis, and a large number of reaction par...

Claims

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Application Information

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IPC IPC(8): C23C16/27
Inventor 晏双利
Owner 晏双利
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