Plasma chemical vapor deposition and magnetron sputtering or ion plating compounded plating method

A chemical vapor deposition, magnetron sputtering technology, applied in sputtering coating, ion implantation coating, gaseous chemical coating and other directions, can solve the problem that the surface technology can not meet the needs and so on

Inactive Publication Date: 2017-09-08
湖州中科金象科技股份有限公司
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the continuous improvement of material requirements, a single ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma chemical vapor deposition and magnetron sputtering or ion plating compounded plating method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Taking the process of coating hydrogen-containing DLC ​​on YT15 cemented carbide tools as an example, the specific implementation and effect of a composite surface technology of plasma chemical vapor deposition and intermediate frequency twin target magnetron sputtering are illustrated.

[0019] YT15 means tungsten-cobalt-titanium cemented carbide containing 15% TiC, and the others are WC and Co.

[0020] The process flow is: pretreatment of workpiece → preparation before coating → vacuuming → heating and bombardment cleaning → preparation of intermediate transition layer → coating of DLC film → cooling and removal of workpiece.

[0021] The pretreatment of the workpiece includes the following four processes: (1) Ultrasonic cleaning, that is, degreasing and cleaning with ultrasonic waves in the prepared metal cleaning solution; (2) Pickling, to neutralize the residual lye during ultrasonic cleaning and play a role The role of activation treatment; (3) rinsing, that is, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of new materials and modern surfaces, in particular to a plasma chemical vapor deposition and magnetron sputtering or ion plating compounded plating method. Voltage is applied to the position between a negative pole and a positive pole to enable reaction gases or inert gases to conduct glow discharging, and then plasma composed of electrons and ions is generated. Movement of the electrons is constrained by orthogonal electric field and magnetic field and limited in a certain area to conduct rotation drift movement, the collision probability of the electrons and gas atoms is enhanced, and therefore the ionization rate of the gas is enhanced; and under the combined action of the potential difference between the negative pole and the positive pole and Hall current formed by a crossed electric and magnetic field, the ions are subjected to beam extraction, and deposited on the surface of a base material directly to form a needed thin film. One important use of the compounded surface technology is to be used for preparing a high-quality diamond-like carbon film. The film has excellent performances, so the film is of great use value.

Description

technical field [0001] The invention relates to the field of new materials and modern surface technology. In particular, it relates to a plating method combining plasma chemical vapor deposition and magnetron sputtering or ion plating. Background technique [0002] Plasma Chemical Vapor Deposition (PCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD), in addition to thermal energy, also uses the excitation or excitation of an external electric field to cause gas discharge, making the gas a plasma state, and promoting chemical reactions. A type of chemical vapor deposition technique that forms a thin film on the surface of a substrate. The PCVD method can reduce the temperature of the substrate a lot, avoid the deformation or internal structure change of the substrate caused by high temperature, and facilitate the chemical reaction, making the reaction that is usually difficult to occur possible, so as to develop various composition ratios. new material. The most imp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/27C23C16/02C23C14/06C23C14/32C23C14/35
CPCC23C14/0611C23C14/325C23C14/352C23C16/0272C23C16/276
Inventor 莫强强
Owner 湖州中科金象科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap