37results about How to "Improve etching effect" patented technology

The invention belongs to the technical field of circuit board processing, and particularly relates to a PCB circuit board etching processing device which is characterized in that the PCB circuit board etching processing device comprises a base, one side of the top of the base is connected with an etching pool through bolts, one side of the etching pool is provided with a liquid outlet, the inner wall of the liquid outlet is provided with a liquid outlet pipe, one end of the liquid outlet pipe is provided with a seal, and the other end of the liquid outlet pipe is provided with a water inlet. A conveying mechanism is arranged on one side of the top of the base and located on one side of the etching pool, a moving mechanism is arranged on one side of the top of the base, an etching mechanism is arranged on the top of the moving mechanism, and a spraying mechanism is arranged between one side of the conveying mechanism and the etching pool. According to the invention, the etching liquid is undulated from top to bottom under the action of the air flow, and the PCBs are shaken under the undulation action of the etching liquid, so that the overlapped PCBs are dispersed, and the situation that the overlapped parts of the PCBs cannot be etched due to the fact that a plurality of the PCBs are overlapped together is prevented.

The invention discloses a method for evaluating the quality of a metal part, which comprises the following steps of: determining the laser type according to the characteristics of the metal part, obtaining various laser parameters for evaluating the quality of the metal part through an experimental method, and performing laser irradiation by adopting the accurately controlled laser parameters. In combination with real-time monitoring and regulation of instruments such as a power meter, a spectrograph, a roughmeter and an optical microscope, a laser parameter-grain boundary definition data set is formed, and finally a quality evaluation model is established to realize accurate evaluation of the quality of the metal parts. According to the method, the quality of the metal parts can be evaluated quickly and economically.

The invention discloses an electric field distribution adjusting device which comprises a first shielding plate and a second shielding plate. The first shielding plate is provided with a hollow hole; the second shielding plate is connected with the first shielding plate, and the two shielding plates can move relatively; and when the second shielding plate moves relative to the first shielding plate, the opening degree of the hollow hole can be adjusted. And the first shielding plate and the second shielding plate can shield an electric field respectively. The electric field distribution adjusting device is provided with two shielding plates capable of shielding an electric field, the two shielding plates can move relatively, the second shielding plate adjusts the opening degree of a hollow hole in the first shielding plate in the relative movement process, and then the shielding degree of the electric field generated by a plasma coupling coil of the plasma etching machine is adjusted. When the etching uniformity of the plasma etching machine is not good, the etching uniformity is improved by changing the electric field. The invention further discloses a plasma etching machine applying the electric field distribution adjusting device, the etching uniformity can be improved by changing the electric field, and the etching effect is improved.

The invention discloses a flow battery graphite felt electrode modification method which comprises the following steps: fully mixing and grinding initial powder in a dry environment to obtain first mixed powder; adding a reagent for providing an oxygen source into the first mixed powder in batches, and stirring in a dry environment to obtain second mixed powder; adding a reagent for providing a nitrogen source into the second mixed powder in batches, and stirring in a dry environment to obtain third mixed powder; a graphite felt electrode is covered with the third mixed powder for calcination modification. The modification process and the operation process are simple, and modification can be completed only by preparing the mixed etching powder and then calcining the mixed etching powder. In addition, the modification cost is lower, and chemical reagents, conventional experimental equipment and the like which are low in price are used. Meanwhile, the method is skillful in that the selected O source and N source are strong etching agents, so that the etching effect is remarkably enhanced.

The invention belongs to the technical field of photoresist materials, and particularly relates to an etching-resistant ArF photoresist and a preparation method thereof. The etching-resistant ArF photoresist is prepared from the following raw materials in parts by weight: 90 to 100 parts of film-forming resin, 5 to 15 parts of a photoacid generator, 0.5 to 2 parts of organic alkali, 3 to 10 parts of an etching-resistant additive and 3000 to 5000 parts of a photoresist solvent, and the etching-resistant additive is a cholic acid derivative; the film-forming resin comprises metacrylic acid ester with a side chain containing lactone, metacrylic acid ester with a side chain containing an aliphatic ring protecting group and metacrylic acid ester with a side chain containing a polar group; according to the etching-resistant ArF photoresist disclosed by the invention, the photoresist with a relatively high-resolution pattern can be formed; the photoresist has high resolution and etching resistance, and the application range of the photoresist can be widened.

The invention discloses engraving equipment for a flexible printed circuit board, and belongs to the technical field of flexible printed circuit board machining.The engraving equipment comprises a rack placed above the ground, a collecting tank is fixedly installed at the upper end of the rack, and a conveying frame is fixedly installed above the collecting tank; a support is fixedly installed at the upper end of the conveying frame, movable pipes are evenly and rotationally installed on the support, and spray heads are evenly installed on the movable pipes. A driving assembly for driving the movable pipe to rotate in a reciprocating manner is mounted on the rear side of the bracket; a pressure adjusting assembly used for adjusting the liquid spraying pressure of the spray head is arranged between the support and the pressure adjusting bin. According to the engraving equipment for the flexible printed circuit board, multi-direction swing adjustment of the spray head can be achieved, it is ensured that etching liquid on the board body can flow uniformly and be updated, the board body can be slightly shaken, the phenomenon that the etching rate is reduced due to formation of a water film is avoided, and the etching effect is effectively improved.

The invention relates to the technical field of wet etching, in particular to an etching liquid composition capable of being used for etching copper-molybdenum and alloy films thereof. The etching liquid composition provided by the invention comprises hydrogen peroxide, a first metal ion chelating agent, a second metal ion chelating agent, a third metal ion chelating agent, inorganic alkali, an etching inhibitor, fluoride and water, the first metal ion chelating agent, the second metal ion chelating agent, the third metal ion chelating agent and the fluoride meet the following relational expression: # imgabs0. According to the etching solution composition disclosed by the invention, the decomposition rate of H2O2 can be well controlled in a high hydrogen peroxide system through mutual coordination of the three metal ion chelating agents; the stability and the service life of the etching liquid are improved; when the etching liquid is applied to etching of a metal film, the line width loss is small, line breakage and residues are avoided, the compatibility is good, the etching performance of the etching liquid on a metal layer is well improved, and the uniformity and the stability of metal layer etching are better.

The present invention relates to an etching device and an etching method thereof. The etching device comprises: an etching liquid supply unit, which supplies etching liquid to an etching chamber; a rinsing liquid supply unit, which supplies rinsing liquid to the etching chamber; a cleaning liquid supply unit, which supplies cleaning liquid to the etching chamber; and a first pressurization maintaining unit, which maintains at least one of the etching chamber and the etching liquid supply unit in a pressurized environment.

The invention discloses an aluminum etching solution with low surface tension. The aluminum etching solution comprises phosphoric acid, nitric acid, acetic acid, deionized water and a functional additive, the functional additive is prepared by carrying out a copolymerization reaction on alkylene phosphonic acid, polyol diene ether and an olefin-containing biquinoline derivative, and then reacting part of phosphonic acid groups with part of sodium hydroxide or potassium hydroxide. The low-surface-tension aluminum etching liquid disclosed by the invention has relatively low surface tension and can better wet the aluminum surface, so that the etching process is accelerated, the etching uniformity and precision are improved, the lateral etching phenomenon is reduced, and the etched pattern edge is clearer and the line is finer. The invention further discloses a preparation method and application of the low-surface tension aluminum etching liquid, and the method is simple and easy to implement and low in cost and has wide industrial application prospects. According to the etching solution and the preparation method thereof, the production quality and efficiency of the printed circuit board can be remarkably improved, and the requirement of the electronic manufacturing industry for a high-precision etching process is met.

The present invention proposes a silicon oxide thinning liquid for integrated circuits and a preparation method thereof, belonging to the technical field of integrated circuits. The silicon oxide thinning liquid is prepared from the following raw materials by weight: 5-10 parts of polyvinyl alcohol quaternary ammonium salt stabilizer, 10-20 parts of hydrofluoric acid, 5-10 parts of sulfuric acid, 5-10 parts of nitric acid, 3-5 parts of surfactant and 50-90 parts of water. The utilization rate of the silicon oxide thinning liquid for integrated circuits of the present invention is improved, the amount of waste liquid generated is significantly reduced, the treatment is simple, and the preparation method is simple, safe and environmentally friendly, and the work efficiency is high, and it has broad application prospects.

The invention relates to the technical field of etching solutions, in particular to the field of IPC C23F1, and more particularly relates to a Cu-Mo alloy multi-film structure etching solution composition. The etching solution comprises the following components in percentage by weight: 14-25% of hydrogen peroxide, 1-6% of a chelating agent, 0.5-4% of an etching agent, 0.1-3% of a regulator, 0.01-1% of an inhibitor, 0.02-6% of a stabilizer and the balance of water. The excellent etching performance conditions are as follows: CD-loss is 0.4-0.55 [mu] m, Taper angle is 40-50 DEG C, no residue and no crack exist, IGZO damagge # imgabs 0 # is below, the highest copper load is 3000 ppm or above, and the service time is 12 hr or above.

This invention provides a copper etching solution, its preparation method, etching method, and application. The copper etching solution comprises 1-30 parts cerium ammonium sulfate, 0-20 parts inorganic acid, 0-20 parts organic acid, and 0-90 parts water. The inorganic acid includes one or more of sulfuric acid, phosphoric acid, hypochlorous acid, chloric acid, boric acid, carbonic acid, nitric acid, nitrous acid, and hydrochloric acid. The organic acid includes one or more of citric acid, acetic acid, tartaric acid, malic acid, formic acid, propionic acid, butyric acid, isobutyric acid, valeric acid, isovaleric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, glycolic acid, acrylic acid, methacrylic acid, lactic acid, gluconic acid, maleic acid, benzoic acid, and salicylic acid. The copper etching solution of this invention exhibits good etching properties for copper and minimal damage to nickel-chromium alloys.

The invention discloses a processing method of a PCB (Printed Circuit Board). The processing method comprises the following steps: data preparation: providing a 2oz copper-clad plate; an outer layer dry film: continuously pasting two layers of dry films with the thickness of 2mil on the copper-clad plate to obtain a first substrate with the dry film thickness of 4mil; exposure and development: carrying out exposure and two-time development on the first substrate to obtain a second substrate; pattern electroplating: performing copper plating and tin plating on the second substrate twice to obtain a third substrate; and etching the outer layer: carrying out two times of film stripping, two times of etching and tin stripping on the third substrate to obtain the PCB of which the copper thickness is 6oz and the ratio of the line width to the copper thickness is 1: 1. According to the processing method of the PCB, the PCB with the copper thickness being 6 oz and the ratio of the line width to the copper thickness being 1: 1 can be produced, line throwing and deformation are avoided after lead-free tin spraying, the production requirement is met, and the production procedure is simple and easy to operate.

An energy-saving and environment-friendly vacuum etching device comprises a machining table, an upper frame, a bearing assembly, a vacuum assembly and a spraying etching assembly, a machining groove with an opening in the upper end is formed in the machining table, the upper frame stands on the machining table and is located above the machining groove, the bearing assembly is arranged in the machining groove, and the spraying etching assembly is arranged in the machining groove. The vacuum assembly is arranged on the upper frame and located above the bearing assembly. The spraying and etching assembly is arranged at the lower end of the vacuum assembly. The bearing assembly comprises a motor, a rotating shaft and a bearing plate. According to the utility model, the circuit board in etching processing is driven to rotate by designing the bearing assembly capable of moving and rotating, the water pit effect in the etching process is weakened and even eliminated by centrifugal force generated by the rotation of the circuit board, and compared with the traditional vacuum suction operation, more work is saved, so that the purposes of energy conservation and environmental protection of the etching device are achieved; the utility model has the advantages of strong practicability and strong popularization significance.

The utility model relates to a novel etching liquid daubing device in the technical field of etching daubing, which comprises a pushing mechanism and a daubing mechanism, the pushing mechanism comprises a bearing module and a driving module used for pushing the bearing module to move horizontally, the daubing mechanism comprises a material storage tank and a flexible daubing strip arranged at the lower end of the material storage tank, and the flexible daubing strip is arranged in the material storage tank. A plurality of liquid drainage holes are uniformly formed in the positions, corresponding to the flexible smearing strip, of the lower end of the storage tank, and a plurality of arc smearing parts are arranged at the bottom of the flexible smearing strip side by side. According to the utility model, by optimizing the structural design of the flexible smearing strip and adopting the arrangement of the plurality of arc smearing parts which are arranged side by side, the etching liquid can be uniformly distributed, the etching effect is effectively improved, a continuous and uniform liquid film is formed by the etching liquid in the smearing process due to the arrangement of the plurality of arc smearing parts, and the etching quality is improved. And the phenomena of liquid drop splashing and non-uniformity in a traditional spraying mode are avoided, the processing precision and consistency of the surface of the substrate are further improved, and the stability of the product quality is ensured.

This application discloses a spin-coating carbon composition, a semiconductor fabrication method, and a semiconductor device. The spin-coating carbon composition comprises a cyclic phenolic resin. The cyclic phenolic resin used in this invention has the characteristics of small molecular weight, narrow molecular weight distribution, and active crosslinking groups distributed on the resin periphery. The spin-coating carbon composition based on the cyclic phenolic resin of this invention, while maintaining excellent coating performance, can significantly improve the thermal stability, etching resistance, and pattern fidelity of the thin film, providing a new generation of hard mask materials for advanced semiconductor manufacturing.

The application discloses a fluorine-containing silicon nitride etching solution, which comprises phosphoric acid, a fluorine-containing compound, an aluminum oxide etching inhibitor, a tungsten etching inhibitor, a silicon oxide etching inhibitor and deionized water. The etching solution can realize selective etching of silicon nitride to silicon oxide, aluminum oxide and tungsten in hot phosphoric acid, while inhibiting etching of the silicon oxide, and the etching rate of the silicon nitride is more stable at high temperature than that of a phosphoric acid / hydrofluoric acid system due to the complexing and slow-release effect of the fluorine-containing compound.

The present invention provides an environmentally friendly and efficient method for etching diamond particles, and relates to the field of diamond etching technology. The method for etching diamond particles is to use water as a solvent to perform a preliminary etching treatment on the diamond particles through an ozone combined with an ultrasonic process, and then perform a rapid heat treatment to fully etch. The present invention overcomes the shortcomings of the existing vapor phase diamond etching technology, significantly improves the surface etching effect of air on diamond particles, and the technology does not produce waste liquid and other pollutants, which is relatively environmentally friendly. The preparation process is fast and efficient, and the etching can be effectively regulated by adjusting parameters such as ozone treatment and temperature, significantly improving the etching effect and efficiency.

The application provides a wafer etching method for etching a wafer with a P-type heavily doped substrate, the wafer etching method comprising: supplying an etching liquid with a preset temperature to the back surface of the wafer to etch the back surface of the wafer while the wafer is rotating, wherein the preset temperature is higher than normal temperature; stopping supplying the etching liquid to the wafer after a continuous duration, and then flushing the back surface of the wafer after the etching liquid stays on the back surface of the wafer for a preset duration. The wafer etching method provided by the application can realize uniform etching of the P-type heavily doped substrate wafer, thereby obtaining a thinned wafer product with the best appearance.

The invention relates to the technical field of semiconductors, and discloses a preparation method of a semiconductor device and the semiconductor device. The preparation method of the semiconductor device comprises the following steps: sequentially forming a seed layer and a welding body at a to-be-interconnected position on a first device part; in the process of forming the welding body, atoms in the welding body and atoms in the seed layer are mutually diffused, and an eutectic film is formed on the side wall of the welding body; performing etching treatment on the eutectic film, and removing the eutectic film; and after the eutectic film is etched, the to-be-interconnected position on the second device part is interconnected with the to-be-interconnected position on the first device part through the welding body. The reliability of the semiconductor device is improved.

The utility model discloses an etching device for TVS (Transient Voltage Suppressor) chip processing, which comprises a shell, an etching tank is arranged on one side in the shell, a drying tank is arranged on one side, far away from the etching tank, in the shell, a first support frame is arranged above one side, close to the etching tank, of the shell, a horizontal transmission assembly is arranged above the first support frame, and a second support frame is arranged above the horizontal transmission assembly. A horizontal transmission assembly is arranged in the etching tank, a vertical transmission assembly is arranged on the horizontal transmission assembly, two connecting rods are arranged on the side, away from the horizontal transmission assembly, of the vertical transmission assembly, a screen frame is arranged below the two connecting rods, a first partition plate is arranged at the lower end in the etching tank, and an ultrasonic generator is arranged below the first partition plate. The etching device is simple in structure, convenient to operate and good in etching effect, the etched TVS chip can be quickly cleaned, meanwhile, the etched TVS chip can be dried, and the processing efficiency of the TVS chip is effectively improved.

The present application relates to the field of semiconductor manufacturing technology, and provides a plasma etching device and method. The plasma etching device includes: a process chamber; a wafer heating device, when the wafer is transferred into the process chamber, the wafer heating device is located above the wafer; the wafer heating device is configured to: before plasma etching, when the process chamber is evacuated, the wafer heating device preheats the wafer until the internal air pressure value of the process chamber is reduced to a preset air pressure value. The plasma etching device can effectively shorten the process cycle and significantly improve the overall production capacity of the machine.

The invention relates to a preparation method of an isometric crystal flexible electrolytic copper foil, which is characterized in that a composite additive of p-aminopyridine, ammonium paratungstate and hydrochloric acid is adopted in a crude foil electrolysis process, so that the crystal structure of the copper foil is converted from a columnar crystal to a fine isometric crystal, on one hand, the rough surface roughness of crude foil is reduced, and the etching performance of the copper foil is favorably improved; the method is suitable for preparing the FPC fine circuit; and on the other hand, the tensile strength and the elongation of the copper foil are improved through the fine grain strengthening effect, so that the bending resistance of the copper foil is greatly improved.

The invention discloses a fluorine-containing silicon nitride etching solution. The etching solution comprises phosphoric acid, a fluorine-containing compound, an aluminum oxide etching inhibitor, a tungsten etching inhibitor, a silicon oxide etching inhibitor and deionized water. The etching solution can realize selective etching of silicon nitride, silicon oxide, aluminum oxide and tungsten in hot phosphoric acid and inhibit etching of silicon oxide at the same time, and the etching rate of silicon nitride is more stable than that of a phosphoric acid / hydrofluoric acid system at a high temperature due to the complexing slow-release effect of the fluorine-containing compound.

The utility model provides a vertical developing spray tray device which comprises two spray trays which are oppositely arranged, a swing mechanism is arranged above each spray tray, and a clamp for loading a circuit tray moves and passes between the two spray trays during spraying; the swing mechanism is used for driving the corresponding spraying disc to move up and down and comprises a bottom plate, a servo electric cylinder, a driving plate and pull rods, the servo electric cylinder is fixed to the upper portion of the bottom plate, the output end of the servo electric cylinder is connected with the driving plate, the two pull rods are symmetrically arranged on the two sides of the driving plate, and the lower ends of the pull rods are connected with the spraying disc. The circuit board etching device is high in etching precision, good in etching effect, wide in application range and suitable for etching, developing and film removing of high-requirement and fine circuit boards.

The application discloses a kind of aramid fiber beating pretreatment method, belong to aramid pulp preparation technical field.The application utilizes CaCl2 solution to aramid fiber pretreatment, obtains CaCl2 modified aramid fiber, then again through silane coupling agent ethanol solution treatment obtains pretreated aramid short fiber.The application utilizes CaCl2 solution to treat aramid fiber, both to aramid fiber has etching effect, improves specific surface area, while complexed Ca 2+ , weaken the hydrogen bond interaction between aramid molecules, thereby reducing beating time and energy consumption.CaCl2 solution to aramid fiber treatment both removes most of the oil agent on the surface of aramid fiber, and also plays a swelling effect on the fiber, saves the step of soaking the fiber before beating.After surface grafting by silane coupling agent, the active sites of aramid fiber are increased, so that the aramid pulp obtained by beating is more easily compounded with rubber matrix.

The application discloses a composite material and a preparation method and application thereof, and relates to the technical field of high polymer materials. The composite material comprises a polymer, glass fibers, silicone and an antioxidant. The composite material provided by the application has excellent mechanical properties, flame-retardant properties and surface plating capability, and has wide application prospects in the fields of new energy vehicles, electronic appliances, buildings, military industry and the like and in extreme environments such as a wide temperature range.

The invention discloses a manufacturing process of an SDB type silicon MEMS high-temperature pressure sensor, and relates to the technical field of pressure detection devices of micro electro mechanical systems, and the manufacturing process comprises the following steps: S1, preparing an SOI material based on a silicon substrate; s2, photoetching a resistor region, and carrying out ion implantation; s3, photoetching a corrosion protection area; s4, carrying out wet etching; s5, manufacturing a lead hole and a metal lead; step S6, metallization and passivation are carried out; and S7, photoetching a back corrosion region. According to the manufacturing process of the SDB type silicon MEMS high-temperature pressure sensor, the surface of the pressure sensitive resistor is not damaged, and the uniformity and consistency are good.

The invention belongs to the technical field of circuit board production, and particularly relates to a circuit board etching machine which comprises a machine base. The machine base is rotationally connected with a lever, and the lever is located in the middle of the machine base. An etching box is fixedly connected to the lever; the etching box is supported by the arranged lever to be located above the machine base, the two bevel gears are driven to rotate along with the output end of the servo motor, the connecting rod is synchronously driven to pull the etching box at the bottom end of the fixing frame to fluctuate up and down, etching liquid is shaken, and the etching liquid is more evenly distributed on the surface of a circuit board; the circuit board etching device has the advantages that uneven etching caused by too high or too low local concentration is avoided, the contact frequency and strength of the etching liquid and the surface of the copper foil can be increased, chemical reaction is accelerated, and accordingly the circuit board etching efficiency is improved, the circuit boards fixed to the bottom ends of the multiple electric telescopic rods are synchronously driven by the multiple second connecting discs to rotate, and the circuit board etching efficiency is improved. Therefore, a plurality of circuit boards are rotationally soaked in the etching liquid, and the soaking effect on the circuit boards is improved.

This utility model relates to the field of solar cell technology, specifically disclosing an etching apparatus. The apparatus includes: an etching unit comprising a substrate, wherein a liquid flow channel is provided on the substrate, the liquid flow channel having a supply port for providing etching solution and a drain port for discharging etching solution; and a liquid flow generating device configured to generate a liquid flow of etching solution, the liquid flow direction being from at least one of the supply ports into the liquid flow channel and from at least one of the drain ports out of the liquid flow channel. Compared with the prior art, the contact interface between the etching solution and the silicon wafer of this utility model is more uniform and stable, which can effectively improve etching uniformity, reduce over-etching rate, improve etching effect, and thus improve the performance and quality of the processed silicon wafer. At the same time, the overall structure of this utility model is simpler, the production precision requirements of the apparatus are lower, effectively reducing equipment costs and manufacturing difficulty, and facilitating industrial production.