12results about How to "Improve etching effect" patented technology

This invention provides a copper etching solution, its preparation method, etching method, and application. The copper etching solution comprises 1-30 parts cerium ammonium sulfate, 0-20 parts inorganic acid, 0-20 parts organic acid, and 0-90 parts water. The inorganic acid includes one or more of sulfuric acid, phosphoric acid, hypochlorous acid, chloric acid, boric acid, carbonic acid, nitric acid, nitrous acid, and hydrochloric acid. The organic acid includes one or more of citric acid, acetic acid, tartaric acid, malic acid, formic acid, propionic acid, butyric acid, isobutyric acid, valeric acid, isovaleric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, glycolic acid, acrylic acid, methacrylic acid, lactic acid, gluconic acid, maleic acid, benzoic acid, and salicylic acid. The copper etching solution of this invention exhibits good etching properties for copper and minimal damage to nickel-chromium alloys.

The utility model relates to a novel etching liquid daubing device in the technical field of etching daubing, which comprises a pushing mechanism and a daubing mechanism, the pushing mechanism comprises a bearing module and a driving module used for pushing the bearing module to move horizontally, the daubing mechanism comprises a material storage tank and a flexible daubing strip arranged at the lower end of the material storage tank, and the flexible daubing strip is arranged in the material storage tank. A plurality of liquid drainage holes are uniformly formed in the positions, corresponding to the flexible smearing strip, of the lower end of the storage tank, and a plurality of arc smearing parts are arranged at the bottom of the flexible smearing strip side by side. According to the utility model, by optimizing the structural design of the flexible smearing strip and adopting the arrangement of the plurality of arc smearing parts which are arranged side by side, the etching liquid can be uniformly distributed, the etching effect is effectively improved, a continuous and uniform liquid film is formed by the etching liquid in the smearing process due to the arrangement of the plurality of arc smearing parts, and the etching quality is improved. And the phenomena of liquid drop splashing and non-uniformity in a traditional spraying mode are avoided, the processing precision and consistency of the surface of the substrate are further improved, and the stability of the product quality is ensured.

This application discloses a spin-coating carbon composition, a semiconductor fabrication method, and a semiconductor device. The spin-coating carbon composition comprises a cyclic phenolic resin. The cyclic phenolic resin used in this invention has the characteristics of small molecular weight, narrow molecular weight distribution, and active crosslinking groups distributed on the resin periphery. The spin-coating carbon composition based on the cyclic phenolic resin of this invention, while maintaining excellent coating performance, can significantly improve the thermal stability, etching resistance, and pattern fidelity of the thin film, providing a new generation of hard mask materials for advanced semiconductor manufacturing.

The application discloses a fluorine-containing silicon nitride etching solution, which comprises phosphoric acid, a fluorine-containing compound, an aluminum oxide etching inhibitor, a tungsten etching inhibitor, a silicon oxide etching inhibitor and deionized water. The etching solution can realize selective etching of silicon nitride to silicon oxide, aluminum oxide and tungsten in hot phosphoric acid, while inhibiting etching of the silicon oxide, and the etching rate of the silicon nitride is more stable at high temperature than that of a phosphoric acid / hydrofluoric acid system due to the complexing and slow-release effect of the fluorine-containing compound.

The application provides a wafer etching method for etching a wafer with a P-type heavily doped substrate, the wafer etching method comprising: supplying an etching liquid with a preset temperature to the back surface of the wafer to etch the back surface of the wafer while the wafer is rotating, wherein the preset temperature is higher than normal temperature; stopping supplying the etching liquid to the wafer after a continuous duration, and then flushing the back surface of the wafer after the etching liquid stays on the back surface of the wafer for a preset duration. The wafer etching method provided by the application can realize uniform etching of the P-type heavily doped substrate wafer, thereby obtaining a thinned wafer product with the best appearance.

The application discloses a kind of aramid fiber beating pretreatment method, belong to aramid pulp preparation technical field.The application utilizes CaCl2 solution to aramid fiber pretreatment, obtains CaCl2 modified aramid fiber, then again through silane coupling agent ethanol solution treatment obtains pretreated aramid short fiber.The application utilizes CaCl2 solution to treat aramid fiber, both to aramid fiber has etching effect, improves specific surface area, while complexed Ca 2+ , weaken the hydrogen bond interaction between aramid molecules, thereby reducing beating time and energy consumption.CaCl2 solution to aramid fiber treatment both removes most of the oil agent on the surface of aramid fiber, and also plays a swelling effect on the fiber, saves the step of soaking the fiber before beating.After surface grafting by silane coupling agent, the active sites of aramid fiber are increased, so that the aramid pulp obtained by beating is more easily compounded with rubber matrix.

The application discloses a composite material and a preparation method and application thereof, and relates to the technical field of high polymer materials. The composite material comprises a polymer, glass fibers, silicone and an antioxidant. The composite material provided by the application has excellent mechanical properties, flame-retardant properties and surface plating capability, and has wide application prospects in the fields of new energy vehicles, electronic appliances, buildings, military industry and the like and in extreme environments such as a wide temperature range.

This utility model relates to the field of solar cell technology, specifically disclosing an etching apparatus. The apparatus includes: an etching unit comprising a substrate, wherein a liquid flow channel is provided on the substrate, the liquid flow channel having a supply port for providing etching solution and a drain port for discharging etching solution; and a liquid flow generating device configured to generate a liquid flow of etching solution, the liquid flow direction being from at least one of the supply ports into the liquid flow channel and from at least one of the drain ports out of the liquid flow channel. Compared with the prior art, the contact interface between the etching solution and the silicon wafer of this utility model is more uniform and stable, which can effectively improve etching uniformity, reduce over-etching rate, improve etching effect, and thus improve the performance and quality of the processed silicon wafer. At the same time, the overall structure of this utility model is simpler, the production precision requirements of the apparatus are lower, effectively reducing equipment costs and manufacturing difficulty, and facilitating industrial production.

This utility model belongs to the field of ultra-thin glass etching technology. Specifically, it relates to a transverse etching device for ultra-thin glass. The transverse etching device includes a fixed base with an etching limiting structure. A locking interface on a first rack is used to engage one edge of the glass, a locking interface on a third rack is used to engage the other edge of the glass, and a locking interface on a second rack is used to engage the bottom edge of the glass, preventing displacement of the glass during etching. The arranged locking interfaces allow for the interleaved arrangement of ultra-thin glass pieces, enabling simultaneous etching of multiple pieces, improving production efficiency, optimizing the etching effect, and reducing the defect rate.

A method for removing a low-dielectric-constant material layer includes: providing a wafer to be cleaned, the surface of which has a low-dielectric-constant material layer; dry etching the wafer using oxygen plasma to reduce the methyl content in the low-dielectric-constant material layer; performing a first isotropic etching on the wafer for a first duration using an etching solution of a first concentration; and performing a second isotropic etching on the wafer for a second duration using the etching solution of a second concentration; wherein the second concentration is less than the first concentration, and the second duration is less than the first duration. This method can quickly and effectively remove the low-dielectric-constant material layer from the wafer surface and significantly reduce the number of particles on the cleaned wafer surface, making the wafer suitable for reuse, thereby improving efficiency and reducing costs.

This invention discloses a high-efficiency, high-weld-strength main grid silver paste adapted to the LECO process and its application. The silver paste comprises silver powder, glass powder, and an organic carrier; wherein the glass powder comprises a Pb-B-Te-Zn glass system. This invention introduces a novel Pb-B-Te-Zn glass system into the paste, thereby giving the glass components better fluidity and etching ability during sintering. The silver powder and silicon wafer act as a strong bond, greatly improving the weld pull value. Furthermore, the paste fuses better with the solder ribbon, exhibits strong tin melting ability, and possesses a good weld fracture surface. It has a wide sintering window, making it compatible with the LECO process where the peak temperature of the existing sintering furnace decreases, reducing the fabrication cost of solar cells. It also enhances the fusion between the front main grid paste and the front fine grid paste, effectively improving the cell's on-state voltage and open-circuit flyback (FF), further improving the cell's photoelectric conversion efficiency.

The utility model provides a novel spraying frame system for PCB etching, and belongs to the technical field of machinery. The novel spraying frame system for PCB etching comprises a connecting pipe, a valve and an etching liquid distribution assembly. The outer end of the etching liquid distribution assembly fixedly connected with the other end of the valve is closed, and a spraying part is arranged at the bottom end. The etching liquid distribution assembly is composed of a nut cylinder, a main pipeline and two sets of branch pipelines, all the parts are welded seamlessly or integrally, the structure is simplified, and installation and debugging are convenient. A multi-stage filtering structure is designed in the spraying part and comprises an atomizing inner container, a stage barrel, a filtering container and a gasket, the filtering container comprises a positioning barrel and a plurality of layers of filtering nets, fine filtering of etching liquid is achieved, and a nozzle is prevented from being blocked. And the spraying end of the spraying main body is provided with the spraying holes and the inclined through holes, so that atomization and uniform distribution of the etching liquid are facilitated. The device has the advantages of being compact in structure, convenient to install and maintain, good in filtering effect, even in spraying, long in service life and the like, and the etching quality and the production efficiency of the PCB are effectively improved.