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Base board for flexible optoelectronic part and its making method

An optoelectronic device, flexible technology, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problems of poor adhesion between the film and the substrate, reduce the production cost and process difficulty of the substrate, and reduce the production cost and Process difficulty, improve etching performance, improve the effect of flatness

Inactive Publication Date: 2007-09-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The substrate solves the problem of poor adhesion between the deposited film and the substrate due to the low surface energy of the flexible substrate, improves the barrier performance of the substrate to water and oxygen, and at the same time plays a good smoothing effect on the substrate surface; the preparation method Simple and effective, it can greatly reduce the production cost and process difficulty of the substrate

Method used

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  • Base board for flexible optoelectronic part and its making method
  • Base board for flexible optoelectronic part and its making method
  • Base board for flexible optoelectronic part and its making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] The substrate structure shown in Figure 1, the flexible substrate 1 is a flexible polyethylene terephthalate polymer (PET) substrate, the organic buffer layer 2 is a single-layer UV-curable adhesive, and the conductive film 3 is DC magnetron sputtering Radiated ITO transparent conductive film. The transmittance test curve is shown in Figure 2.

[0047] The preparation method is as follows:

[0048] ①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the PET substrate, and dry it with dry nitrogen after cleaning;

[0049] ② Stir the UV-curable glue diluted 1:10 with ethanol for 20 hours, then spin-coat it on the PET surface at a speed of 2000 rpm for one minute, and the film thickness is about 100 nanometers;

[0050] ③UV curing treatment on the surface of the substrate for 30 seconds;

[0051] ④Put the substrate into a vacuum chamber, and at room temperature, by means of DC magnetron sputtering, sputter a 100-nm thick ITO tr...

Embodiment 2

[0055] As shown in the substrate structure in Figure 1, the flexible substrate 1 is made of a flexible metal foil, the organic buffer layer 2 is made of a single-layer UV-curable adhesive, and the conductive film 3 is a DC magnetron sputtered ITO transparent conductive film.

[0056] The preparation method is as follows:

[0057] ①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the flexible metal foil, and dry it with dry nitrogen after cleaning;

[0058] ② Stir the UV-curable adhesive diluted 1:1 with ethanol for 30 hours, then spin-coat it on the surface of the flexible metal foil at a speed of 3000 rpm for 1 minute, and the film thickness is about 200 nanometers;

[0059] ③UV curing treatment on the surface of the substrate for 30 seconds;

[0060] ④ Put the substrate into the vacuum chamber, and at room temperature, by means of DC magnetron sputtering, sputter a 200-nm thick ITO transparent conductive film on the surface of th...

Embodiment 3

[0063] As shown in the substrate structure in Figure 1, the flexible substrate 1 is a PET substrate, the organic buffer layer 2 is a single-layer UV-curable adhesive, and the conductive film 3 is a metal conductive film prepared by thermal evaporation.

[0064] ①Use detergent, acetone solution, ethanol solution and deionized water to ultrasonically clean the surface of the PET substrate, and dry it with dry nitrogen after cleaning;

[0065] ② Stir the UV-curable glue diluted 1:10 with ethanol for 20 hours, then spin-coat it on the PET surface at a speed of 2000 rpm for one minute, and the film thickness is about 100 nanometers;

[0066] ③Irradiate the surface of the substrate with ultraviolet light for 30 seconds;

[0067] ④Put the substrate into a vacuum chamber, and evaporate a 100nm thick metal conductive film on the surface of the PET substrate by thermal evaporation at room temperature;

[0068] ⑤After taking the substrate out of the vacuum chamber, irradiate with ultrav...

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Abstract

The invention is a substrate for a flexible photoelectronic device, comprising flexible substrate, and characterized by also comprising organic buffer layer spin-coated on the substrate surface and conductive film, where the conductive film is deposited on the surface of the organic buffer layer, and the material of the organic buffer layer is organic photo-curing agent. And it solves the problem of bad adhesion between the deposited film and the substrate caused by low surface energy of the flexible substrate and improves the obstruction performance of the substrate to water-dissolved oxygen, and besides play a good role of smoothening the substrate surface; and the preparing method is simple, effective and able to largely reduce substrate production cost and process difficulty.

Description

technical field [0001] The invention relates to an optoelectronic device, in particular to a substrate for a flexible optoelectronic device and a preparation method thereof. Background technique [0002] Optoelectronics technology is a high-tech industry that develops rapidly after microelectronics technology. With the rapid development of optoelectronic technology, optoelectronic products such as solar cells, optical image sensors, plasma flat panel displays, electroluminescent displays, thin film transistors, and liquid crystal display panels have gradually matured, and they have greatly improved human life. At the same time, the wide application of optoelectronic information technology in various fields of social life has also created a huge growing market. Developed countries regard the optoelectronic information industry as one of the key development areas, and the competition in the optoelectronic information field is unfolding worldwide. [0003] The wide applicatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/00H01L21/02H01L51/00H01L31/02H01L31/0216H01L31/18H01L33/00H01L33/48H01L33/62H10K99/00
Inventor 于军胜蒋亚东林慧
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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