The invention discloses a polarization-sensitive narrow-band solar blind self-driven photoelectric
detector and a preparation method thereof, and belongs to the technical field of
semiconductor photoelectric devices. The
detector comprises an n-type conductive single Ga2O3 micron wire, a p-type conductive GaN substrate, a
PET substrate and a two-dimensional
graphene film. According to the device, Ni / Au
alloy is selected as a positive
electrode, and a two-dimensional
graphene film is used as a transparent window of
ultraviolet solar blind light and a negative
electrode of the device. By means of built-in potential formed by the n-Ga2O3 / p-GaN
heterojunction and a
Schottky barrier of Ga2O3 /
Graphene, high-sensitivity detection of solar-blind
ultraviolet light under the self-driving condition is achieved. The device has relatively high
responsivity,
specific detection rate and external
quantum efficiency. The preparation method comprises the following steps: cleaning the GaN substrate, evaporating the Ni / Au
electrode, adhering the
PET substrate with the channel, transferring the Ga2O3 micron wire to form the
heterojunction, and transferring and curing the
graphene electrode. The device has the characteristics of polarization sensitivity and low
power consumption, and can be applied to the fields of
ultraviolet solar blind band
encryption communication and environment monitoring.