Flexible integrated ultrasonic transducer and preparation method thereof
An ultrasonic transducer and flexible technology, applied in the directions of sound-producing equipment, semiconductor/solid-state device manufacturing, instruments, etc., can solve the problems of low gain and low signal-to-noise ratio, and achieve the effect of improving sensitivity, reducing manufacturing cost and expanding the scope of application
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[0026] The flexible integrated ultrasonic transducer of the present invention is structurally integrated with an organic thin film transistor and a piezoelectric sensor. Substrate 1, silicon dioxide isolation layer 2, source and drain electrodes 3, organic semiconductor film layer 4, gate dielectric layer 5, gate electrode layer 601, epoxy resin film layer 701, polyvinylidene fluoride PVDF piezoelectric film layer 8 , upper electrode layer 602 and epoxy resin film layer 702.
[0027] The preparation method of the flexible integrated ultrasonic transducer of the present invention is carried out according to the following steps:
[0028] (1) Preparation of moisture-proof isolation layer: Magnetron sputtering can be used to deposit silicon dioxide (SiO2) on a flexible substrate of polyethylene terephthalate (PET). 2 )film;
[0029] (2) preparation of an organic thin film transistor, the steps of which include:
[0030] Step 1: Depositing a metal thin film layer on the substrat...
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