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Metal support surface modification method

A metal stent and surface modification technology, which is applied in the direction of stent, metal material coating process, ion implantation plating, etc., can solve the problems of low film surface quality, easy sparking, and low bonding strength, so as to reduce restenosis rate and late thrombosis rate, high density and good corrosion resistance

Inactive Publication Date: 2014-07-16
SOUTHWEST JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The existing methods for preparing inorganic coatings mainly include conventional magnetron sputtering, vacuum metal arc source deposition, plasma immersion ion implantation, etc., which are applied to the surface modification of vascular stents. These technical means have low bonding strength and thin film surface. Low quality (with large particles) and high voltage during processing are prone to ignition, damage to the bracket and other issues

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A. Ultrasonic clean the cobalt alloy bracket in alcohol and distilled water for 20 minutes, take it out, and dry it for later use;

[0029] B. Open the vacuum chamber 2 of the high-power pulse magnetron sputtering device, install a sputtering titanium target 8 with a purity of 99.99%, put the cobalt alloy bracket into the vacuum chamber 2, close the vacuum chamber, and evacuate to 0.5×10 -3 Pa.

[0030] C. Open the gas valve 4, pass argon gas into the vacuum chamber 2 to a pressure of 0.5 Pa, turn on the sputter cleaning power supply, sputter clean the titanium target for 8 minutes, turn off the argon gas and the sputter cleaning power supply.

[0031] D. Open the gas valve 4, introduce argon gas into the vacuum chamber 2 to a pressure of 1 Pa, use radio frequency discharge to form argon plasma, turn on the bias power supply 6, and apply a -300V bias on the cobalt alloy stent to Perform sputter cleaning for twenty minutes, then turn off the argon gas and the bias power supply ...

Embodiment 2

[0037] A. The stainless steel bracket is ultrasonically cleaned in alcohol and distilled water for 20 minutes and taken out, dried for later use;

[0038] B. Open the vacuum chamber 2 of the high-power pulse magnetron sputtering device, install a sputtering titanium target 8 with a purity of 99.99%, put the stainless steel bracket into the vacuum chamber 2, close the vacuum chamber, and evacuate to 0.5×10 -3 Pa.

[0039] C. Open the gas valve 4, pass argon gas into the vacuum chamber 2 to a pressure of 0.5 Pa, turn on the sputter cleaning power supply, sputter clean the titanium target for 8 minutes, close the gas valve and the sputter cleaning power supply.

[0040] D. Open the gas valve 4, pass argon gas into the vacuum chamber 2 to a pressure of 0.5 Pa, use radio frequency discharge to form argon plasma, turn on the bias power supply 6, and apply a -50V bias on the stainless steel bracket to perform Sputter cleaning for 10 minutes, then close the gas valve 4 and the bias power sup...

Embodiment 3

[0044] A. Ultrasonic clean the titanium alloy bracket in alcohol and distilled water for 30 minutes, take it out, and dry it for later use;

[0045] B. Open the vacuum chamber 2 of the high-power pulse magnetron sputtering device, install a sputtering titanium target 8 with a purity of 99.99%, put the titanium alloy bracket into the vacuum chamber 2, close the vacuum chamber 2, and evacuate to 1×10 -3 Pa.

[0046] C. Open the gas valve 4, pass argon gas into the vacuum chamber 2 to a pressure of 1 Pa, turn on the sputter cleaning power supply, sputter clean the titanium target for 85 minutes, close the gas valve 4 and the sputter cleaning power supply.

[0047] D. Open the gas valve 4, inject argon gas into the vacuum chamber 2 to a pressure of 2Pa, use radio frequency discharge to form argon plasma, turn on the bias power supply 6, and apply a -500V bias on the titanium alloy stent. Perform sputtering cleaning for 20 minutes, and then close the gas valve 4 and the bias power supply ...

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Abstract

The invention relates to a metal support surface modification method and belongs to the technical field of metal surface modification. The method is used for depositing a titanium / titanium oxide film on the surface of a metal support by effectively utilizing high power pulse magnetron sputtering technology. The method includes the following steps: firstly, putting the metal support in a vacuum chamber of high power pulse magnetron sputtering equipment, and vacuumizing the vacuum chamber to 0.5*10<-3> Pa to 2*10<-3>Pa; filling argon into the vacuum chamber, and sputter cleaning the metal support and a target; introducing argon into the vacuum chamber, and preparing a titanium transition layer with high binding force on the surface of the metal support by utilizing the high power pulse magnetron sputtering technology, by means of regulating such parameters as sputtering voltage amplitude, frequency, pulse width, sputtering voltage and matrix bias voltage; finally, introducing argon and oxygen into the vacuum chamber, and preparing a firmly combined titanium oxide film on the surface of the metal support by regulating such parameters as sputtering voltage amplitude, frequency, pulse width, sputtering voltage and matrix bias voltage. The method is mainly applied to surface modification of the metal support.

Description

Technical field [0001] The invention belongs to the technical field of metal surface modification, and particularly relates to a method for modifying the surface of a metal support. Background technique [0002] Metal stents are widely used as vascular stents in the clinical treatment of coronary heart disease due to their good mechanical properties and excellent processing properties. However, metal stents have the disadvantage of insufficient blood compatibility. For example, after metal stents are implanted in the human body, they will release toxic metal ions (such as nickel ions, chromium ions, etc.) during long-term service. These ions are in the blood and blood vessel tissues. Long-term release may lead to long-term complications of stent implantation patients, such as vascular restenosis, advanced thrombosis, etc., threatening the lives of patients. The surface modification of the metal stent can effectively inhibit the release of toxic metal ions and improve the biocomp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16A61F2/82A61M29/00A61L31/08
Inventor 冷永祥陈赏谢东黄楠
Owner SOUTHWEST JIAOTONG UNIV
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