LED epitaxial growth method for improving radiation recombination efficiency

A technology of epitaxial growth and recombination efficiency, which is applied in the field of LED epitaxial growth to improve radiation recombination efficiency, can solve the problems of low quantum well growth quality and low quantum well radiation recombination efficiency, and achieves improved luminous efficiency, improved LED luminous efficiency, The effect of reducing dislocation density

Pending Publication Date: 2020-06-02
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] The invention solves the problems of low quantum well growth quality and low quantum well radiation recombination efficiency existing in the

Method used

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  • LED epitaxial growth method for improving radiation recombination efficiency
  • LED epitaxial growth method for improving radiation recombination efficiency
  • LED epitaxial growth method for improving radiation recombination efficiency

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Example Embodiment

[0041] Example 1

[0042] This embodiment adopts the LED epitaxial growth method for improving radiation recombination efficiency provided by the present invention, and uses MOCVD to grow GaN-based LED epitaxial wafers, and uses high-purity H 2 Or high purity N 2 Or high purity H 2 And high purity N 2 Mixed gas as carrier gas, high purity NH 3 As the N source, metal organic source trimethyl gallium (TMGa) is used as gallium source, trimethyl indium (TMIn) is used as indium source, and the N-type dopant is silane (SiH 4 ), trimethyl aluminum (TMAl) is used as the aluminum source, and the P-type dopant is magnesium cerocene (CP 2 Mg), the reaction pressure is between 70 mbar and 900 mbar. The specific growth method is as follows (please refer to the epitaxial structure figure 1 ):

[0043] An LED epitaxial growth method for improving radiation recombination efficiency, which in turn includes: processing a substrate 1, growing a low-temperature buffer layer GaN2, growing an undoped GaN...

Example Embodiment

[0074] Example 2

[0075] The following provides a comparative example, namely the growth method of the traditional LED epitaxial structure (for the epitaxial structure please refer to figure 2 ).

[0076] Step 1: At a temperature of 1000-1100°C, a reaction chamber pressure of 100-300mbar, and 100-130L / min of H 2 Under the conditions, process the sapphire substrate for 5-10 minutes.

[0077] Step 2: Growing a low-temperature GaN buffer layer, and forming irregular islands on the low-temperature GaN buffer layer 2.

[0078] Specifically, the step 2 further includes:

[0079] At the temperature of 500-600℃, the pressure of the reaction chamber is 300-600mbar, and NH of 10000-20000sccm is introduced 3 , 50-100sccm of TMGa, 100-130L / min of H 2 Growing the low-temperature GaN buffer layer 2 on the sapphire substrate 1, and the thickness of the low-temperature GaN buffer layer 2 is 20-40 nm;

[0080] At the temperature of 1000-1100℃, the pressure of the reaction chamber is 300-600mbar, and t...

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Abstract

The invention discloses an LED epitaxial growth method for improving radiation recombination efficiency. The method sequentially comprises the steps of processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a multi-quantum well layer, growing an AlGaN electron blocking layer, growing a Mg-doped P-type GaN layerand cooling, wherein the step of growing the multi-quantum well layer sequentially comprises the sub-steps of growing an InGaN transition layer, growing an InGaN well layer, growing a doped gradientSiN layer, growing a doped gradient MgN layer, growing a GaN barrier layer doped with Mg in a linear gradient mode and growing an InAlN layer. According to the method, the problems of low quantum wellgrowth quality and low quantum well radiation recombination efficiency in the existing LED epitaxial growth method are solved, so that the luminous efficiency of the LED is improved.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to an LED epitaxial growth method for improving radiation recombination efficiency. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When the LED has current flowing, the electrons and holes in the LED recombine in its multiple quantum wells to emit monochromatic light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, LED has the advantages of low voltage, low energy consumption, small size, light weight, long life, high reliability and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs. [0003] The quality of LED epitaxial InGaN / GaN multi-quantum wells prepared...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L33/00H01L33/06H01L33/32C23C16/30C23C16/34
CPCH01L21/0242H01L21/02458H01L21/0254H01L21/02576H01L21/02579H01L21/0262H01L33/007H01L33/06H01L33/325C23C16/303C23C16/34C23C16/345Y02P70/50
Inventor 徐平吴奇峰胡耀武周孝维
Owner XIANGNENG HUALEI OPTOELECTRONICS
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