LED epitaxial growth method for improving radiation recombination efficiency
A technology of epitaxial growth and recombination efficiency, which is applied in the field of LED epitaxial growth to improve radiation recombination efficiency, can solve the problems of low quantum well growth quality and low quantum well radiation recombination efficiency, and achieves improved luminous efficiency, improved LED luminous efficiency, The effect of reducing dislocation density
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Embodiment 1
[0042] This embodiment adopts the LED epitaxial growth method for improving radiation recombination efficiency provided by the present invention, adopts MOCVD to grow GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):
[0043] An LED epitaxial growth method for improving radiation recombination efficiency, comprising: processing a substrate 1, growing a low-temperature buffer layer GaN2, growing an undoped GaN layer 3, g...
Embodiment 2
[0075] Comparative examples are provided below, that is, the growth method of the traditional LED epitaxial structure (for the epitaxial structure, please refer to figure 2 ).
[0076] Step 1: At a temperature of 1000-1100°C and a reaction chamber pressure of 100-300mbar, feed 100-130L / min of H 2 Under the conditions, process the sapphire substrate for 5-10 minutes.
[0077] Step 2: growing a low-temperature GaN buffer layer, and forming irregular small islands in the low-temperature GaN buffer layer 2 .
[0078] Specifically, the step 2 is further as follows:
[0079] At a temperature of 500-600°C and a reaction chamber pressure of 300-600mbar, 10000-20000sccm of NH is introduced 3 , 50-100sccm TMGa, 100-130L / min H 2 Under the condition of , growing the low-temperature GaN buffer layer 2 on the sapphire substrate 1, the thickness of the low-temperature GaN buffer layer 2 is 20-40nm;
[0080] At a temperature of 1000-1100°C and a reaction chamber pressure of 300-600mbar,...
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