35results about How to "Improve radiative recombination efficiency" patented technology

The invention relates to the technical field of photoelectricity, and discloses a Micro LED epitaxial wafer, a preparation method thereof and a Micro LED chip, the Micro LED epitaxial wafer comprises a substrate, and the substrate is sequentially provided with a buffer layer, an N-type GaN layer, a multi-quantum well layer and a P-type GaN layer; the multi-quantum well layer comprises a first multi-quantum well layer, a second multi-quantum well layer and a third multi-quantum well layer which are stacked in sequence, the In component content of the second InGaN quantum well layer is larger than the In component content of the first InGaN quantum well layer, and the In component content of the second InGaN quantum well layer is larger than the In component content of the third InGaN quantum well layer. According to the Micro LED epitaxial wafer provided by the invention, the lighting effect of a Micro LED chip under low working current density can be improved.

The invention relates to the technical field of LED epitaxial wafers, and discloses a GaN-based LED epitaxial wafer and a preparation method thereof, and the GaN-based LED epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, a stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer, and a P-type semiconductor layer. Wherein the N-type semiconductor layer sequentially comprises a first porous low-temperature GaN layer, a second porous AlGaN / GaN superlattice layer, a third high-temperature GaN layer, a fourth porous AlGaN / GaN superlattice layer and a fifth high-temperature GaN layer. By adopting the invention, the generation of defects in the growth process of the epitaxial material can be reduced, the dislocation density of the material is reduced, and the quality of the epitaxial wafer material is remarkably improved, so that the radiation recombination efficiency in the active region of the light-emitting diode is improved, and meanwhile, the proportion of the photon escape body material in the active region can be remarkably improved.

This disclosure provides a light-emitting diode and its fabrication method, belonging to the field of light-emitting devices. The light-emitting diode includes: an epitaxial layer; the epitaxial layer includes an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, and a P-type semiconductor layer stacked sequentially; the multiple quantum well layer includes multiple stacked light-emitting units, each light-emitting unit including a stacked first quantum well sublayer, a quantum barrier layer, and a second quantum well sublayer; the thickness of the first quantum well sublayer is less than the thickness of the second quantum well sublayer, the thickness of the quantum barrier layer is less than the thickness of the first quantum well sublayer, and the In content in the first quantum well sublayer is greater than the In content in the second quantum well sublayer.

This invention discloses a III-V semiconductor epitaxial structure, its fabrication method, and its applications. The epitaxial structure includes a first buffer layer and a first interconnecting layer stacked together. The first interconnecting layer has a first protrusion structure with intermittent structures between it. It also includes a second buffer layer and a second interconnecting layer within the intermittent structures, the second interconnecting layer being composed of at least multiple independent second protrusion structures. The first and second protrusion structures can serve as the basis for epitaxial growth. The III-V semiconductor light-emitting layer grown based on the III-V semiconductor epitaxial structure provided by this invention forms light-emitting surfaces of various sizes and curvatures, greatly increasing the light-emitting area. It also enables the light-emitting layer to form quantum dot luminescence, and utilizes the quantum dot confinement effect to reduce the quantum Stark effect, improving the incorporation of light-emitting layer components. These combined effects significantly improve radiative recombination efficiency, ultimately enhancing the overall luminous intensity and efficiency of the device.

The invention provides a red-light nitride epitaxial wafer, a preparation method thereof and a Micro-LED. The red-light nitride epitaxial wafer comprises a sapphire substrate, an insertion structure, an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer, the insertion structure penetrates through the n-type nitride pattern structure layer, the light-emitting layer and part of the p-type metal nitride layer and comprises a composite Si nano-column and a composite regulation and control layer, and the composite Si nano-column comprises a Si nano-column and a semi-ellipsoid structure; the composite regulation and control layer comprises a protection layer and a buffer layer, the protection layer is arranged on the outer wall of the Si nano-column, and the buffer layer is arranged on the area between the adjacent composite Si nano-columns; and an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer are laminated on the buffer layer between the adjacent composite Si nano columns. The In component merging and uniformity can be improved, the light-emitting efficiency and brightness of the Micro-LED are improved, the half-peak width of the light-emitting wavelength is reduced, and the color purity of display application is improved.

The application provides a semiconductor laser element, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer; a topological Dirac electron point layer is arranged between the upper waveguide layer and the electron blocking layer, and a topological Dirac electron point layer is arranged between the electron blocking layer and the upper confinement layer; the active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3 >= m >= 1; the well layer is any one or any combination of InGaN, InN, AlInN and GaN, and the thickness is 10-80 angstrom meters; and the barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN and AlInN, and the thickness is 10-120 angstrom meters. The semiconductor laser element provided by the application can generate non-local effects between electrons and electrons through the cage lattice structure of the arranged topological Dirac electron point layer, and can inhibit the charge density wave and the quantum limited Stark effect.

The present invention discloses a light emitting diode with a ladder-type quantum well structure, comprising: an N-type electrode, a P-type electrode, a substrate, and an N-type conductive layer, a quantum well active region, a P-type electron blocking layer and a P-type conductive layer stacked on the substrate in sequence; wherein the N-type electrode is electrically connected to the N-type conductive layer; the P-type electrode is electrically connected to the P-type conductive layer; the quantum well active region comprises a quantum well layer and an Al2O3 layer stacked on the N-type conductive layer in sequence; 0.6 Ga 0.4 N quantum barrier layers; the quantum well layer is a step-type quantum well, and its thickness is 2nm. The present invention, by setting a quantum well active region, will not cause a very strong polarization electric field, thereby improving the energy band bending caused by the polarization effect, and increasing the overlap rate of the electron and hole wave functions, and ultimately improving the radiation recombination efficiency and luminescence efficiency of the diode.

The application belongs to the technical field of LED semiconductors, and more particularly relates to a GAN-based Micro LED epitaxial wafer containing a multi-element aluminum-nitrogen composite electron balance layer and a preparation method thereof.The application comprises, from bottom to top, a substrate, a low-temperature buffer layer, an undoped GaN layer, an N-type GaN layer, a composite electron balance layer, a multi-quantum well light-emitting layer, and a P-type GaN layer; the composite electron balance layer is composed of any two material layers selected from ScAlN, YAlN, and InAlN and an AlGaN layer, which are alternately stacked.The application adds the ScAlN / YAlN / InAlN-AlGaN alternately stacked composite electron balance layer between the N-type GaN layer and the multi-quantum well light-emitting layer, so as to achieve the effects of improving the light-emitting power of the Micro LED, reducing non-radiative recombination, enhancing the static resistance of the device, and improving the stability of large-current operation.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The embodiment of the invention provides a light emitting diode capable of improving current expansion capability and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode comprises a light-emitting structure, a first passivation layer, a connecting electrode layer, a second passivation layer and a bonding pad electrode layer, and the connecting electrode layer comprises a plurality of strip-shaped first connecting electrodes and a plurality of strip-shaped second connecting electrodes which are alternately arranged at intervals in the first direction. The length directions of the first connecting electrode and the second connecting electrode are second directions, and the first direction and the second direction are intersected; each first connecting electrode is electrically connected with the first semiconductor layer in the plurality of grooves through a plurality of first through holes penetrating through the first passivation layer, and each second connecting electrode is electrically connected with the second semiconductor layer through a plurality of second through holes penetrating through the first passivation layer. According to the embodiment of the invention, the luminous efficiency and reliability of the LED can be improved, and the driving voltage of the LED is reduced.

The invention discloses a green light Micro-LED epitaxial structure and a preparation method thereof, and relates to the technical field of semiconductor devices. A multi-quantum well light-emitting layer in the epitaxial structure comprises an N-polarity blue light multi-quantum well layer, an N-polarity green light multi-quantum well layer, a Ga-polarity green light multi-quantum well layer and an N-polarity blue light end quantum well layer which are stacked in sequence. The N-polarity blue light multi-quantum well layer, the N-polarity green light multi-quantum well layer and the N-polarity blue light end quantum well layer each comprise an N-polarity well front gradient InGaN layer, an N-polarity quantum well InGaN layer, an N-polarity well rear gradient InGaN layer and an N-polarity quantum barrier GaN layer which are sequentially, periodically and alternately stacked. The Ga polarity green light multi-quantum well layer comprises a Ga polarity well front carrier binding layer, a Ga polarity light-emitting quantum well InGaN layer, a Ga polarity well rear carrier binding layer and a Ga polarity quantum barrier GaN layer which are sequentially, periodically and alternately stacked. According to the invention, the radiation recombination efficiency of the active region under the low working current density can be improved, and the lighting effect of the Micro-LED chip under the low working current density is further improved.

The application relates to a gallium arsenide-based super-radiation light-emitting diode and a preparation method thereof, and mainly solves the technical problem that when a cavity surface is coated with an anti-reflection film in combination with a non-pumping absorption zone and a curved waveguide, an inclined waveguide, a tapered waveguide and other technologies to suppress light oscillation in a resonance cavity, resonance gain still exists, which has a negative impact on the power and other performances of the gallium arsenide-based super-radiation light-emitting diode. The gallium arsenide-based super-radiation light-emitting diode comprises a substrate layer, an epitaxial layer arranged on the substrate layer, and a metal layer arranged on the epitaxial layer; the metal layer is in a straight line type structure; the light-out surface and the back-light surface of the substrate layer and the epitaxial layer are arranged in parallel to each other, and the light-out surface and the back-light surface are both arranged in an inclined manner along the direction from the back-light surface to the light-out surface; an obtuse angle formed by the light-out surface and the back-light surface with a horizontal direction is defined as an inclination angle alpha, and the value of alpha is 100-110 degrees; the light-out surface is coated with an AR reflection film, and the reflectivity is 0.5-50%; and the back-light surface is coated with an HR reflection film, and the reflectivity is greater than 90%.

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode and a light-emitting device.The light-emitting diode comprises a semiconductor lamination layer, and the semiconductor lamination layer at least comprises an N-type semiconductor layer, an active layer, a hole injection layer and a P-type semiconductor layer which are stacked from bottom to top. The hole injection layer comprises a first concentration curve of Mg, the first concentration curve of Mg at least comprises a first peak shape close to the active layer and a second peak shape away from the active layer, and the maximum value of the first peak shape is not larger than the maximum value of the second peak shape. Therefore, more impurities can be prevented from diffusing into the active layer, the quality of the active layer is guaranteed, the radiative recombination efficiency of electrons and holes is improved, and the luminance of the light-emitting diode is further improved.

The invention discloses a diode device with a hole injection enhancement structure and a preparation method of the diode device, and belongs to the technical field of semiconductor devices.The diode device comprises a planar n-type doped III-nitride semiconductor substrate; the columnar structures are arranged in a random or periodic array mode, the diameters of the columnar structures are the same or different, the columnar structures are located on the surface of the planar n-type doped III-nitride semiconductor substrate, and each columnar structure comprises an n-type semiconductor column, an active area and a hole injection enhancement structure from bottom to top; wherein the hole injection enhancement structure wraps the upper surface and at least part of the side surface of the active region, the n-type semiconductor column and the hole injection enhancement structure are made of doped III-group nitride semiconductors, and the doping types are n type and p type respectively. The hole injection enhancing structure introduced by the invention enhances the injection of holes to the active region, is beneficial to improving the radiation recombination efficiency, can reduce the turn-on voltage and the working voltage of the device, and improves the carrier injection efficiency and the external quantum efficiency.

The utility model discloses a semiconductor laser packaging module. The semiconductor laser packaging module comprises a pin, a tube socket, a tube tongue, a heat sink and a laser chip, a first connecting layer is arranged between the laser chip and the heat sink; a second connecting layer is arranged between the heat sink and the tube tongue; the thermal resistance of the first connecting layer is less than or equal to that of the heat sink; the thermal resistance of the second connecting layer is smaller than or equal to that of the tube base; the thermal resistance of the second connecting layer is less than or equal to that of the first connecting layer; the thermal resistance of the second connecting layer is smaller than or equal to the thermal resistance of the tube tongue, thermal resistance bottleneck points of the laser module are reduced, the total thermal resistance of the laser module is reduced, and the junction temperature of the laser chip is further reduced, so that the thermal mismatch and temperature rise amplitude of the laser chip are reduced, the piezoelectric polarization and quantum restriction effect of the laser chip are reduced, and the reliability of the laser chip is improved. The quantum confinement effect, the radiative recombination efficiency and the heat reversal current density of the laser chip are improved, the mode hopping proportion is reduced, and the slope efficiency reduction in the aging process is improved.

The present invention relates to the field of semiconductor devices, and in particular to an LED epitaxial structure and a preparation method thereof and an LED device. An LED epitaxial structure comprises a substrate and an epitaxial layer located on the substrate, wherein the epitaxial layer comprises a buffer layer, an N-type semiconductor layer, a channel defect composite layer, a multi-quantum well light-emitting layer and a P-type semiconductor layer sequentially arranged along the epitaxial direction, wherein the channel defect composite layer comprises a channel defect generating layer, a channel defect amplifying layer and a channel defect repairing layer sequentially arranged, and the carbon content in the channel defect generating layer is not less than 5×10 17 atoms / cm 3 The LED epitaxial structure of the present invention can more effectively alleviate the stress conduction of the bottom layer and reduce the QCSE of the active area through the cooperation of the channel defect generating layer, the channel defect amplifying layer and the channel defect repairing layer, thereby improving the radiation recombination efficiency.

This invention discloses a low-current-density blue Micro-LED epitaxial structure and its fabrication method, relating to the field of semiconductor device technology. The multi-quantum-well emitting layer of the epitaxial structure comprises, sequentially stacked along the epitaxial direction, a violet multi-quantum-well layer, a light blue multi-quantum-well layer, a blue multi-quantum-well layer, and a violet-light-end quantum-well layer. Each of the violet, light blue, blue, and violet-light-end quantum-well layers includes, sequentially and periodically alternating N-polarity gradient InGaN layer before the well, an N-polarity InGaN quantum-well layer, an N-polarity gradient AlGaN layer after the well, and a Ga-polarity GaN quantum barrier layer. The N-polarity gradient InGaN layer before the well is an N-polarity InGaN material with an increasing In content along the epitaxial direction. This invention can significantly improve the luminous efficacy of Micro-LED chips at low operating current densities.

The invention provides a multilayer quantum well structure, an epitaxial structure thereof and a quaternary system AlGaInP light emitting diode, and relates to the technical field of light emitting diodes. The multi-layer quantum well structure comprises a plurality of quantum well layers and a plurality of quantum barrier layers which are periodically stacked, the quantum well layers and the quantum barrier layers are made of AlGaInP, a protection layer is arranged between the quantum well layer and the quantum barrier layer in each period and comprises an AlGaP layer and an AlGaInP layer, the AlGaP layer is arranged between the quantum well layer and the AlGaInP layer, and the AlGaInP layer is arranged between the quantum well layer and the AlGaInP layer. The Al component in the AlGaInP layer is set to be reduced from a first preset value to a second preset value from bottom to top, the In component is set to be increased from zero to a third preset value from bottom to top, the Al component in the AlGaInP layer is any value ranging from 0.3 to 0.5, the Al component in the quantum barrier layer is the second preset value, and the In component in the quantum barrier layer is the third preset value. The lattice matching degree between every two adjacent layers in the multi-layer quantum well structure is high, TMIN diffusion is prevented, meanwhile, the protection layer can limit electron overflow, and the electron migration rate is reduced.

The invention discloses a non-polar surface micro light-emitting diode (Micro-LED) with an independent mesa structure and a preparation method of the non-polar surface micro light-emitting diode (Micro-LED), full relaxation of an epitaxial structure is realized based on selective area epitaxy and lateral epitaxy, and generation of defects in an epitaxial layer can be effectively inhibited. Meanwhile, mutually independent Micro-LED functional layers such as quantum wells are grown on mutually independent mesas, so that the Micro-LED can be prepared without etching damage of the quantum wells, the etching damage of the quantum wells caused by reducing the size of the LED through process etching in a traditional scheme and non-radiative recombination additionally caused by the etching damage of the quantum wells are eliminated, and the efficiency of the Micro-LED is effectively improved. The invention provides a new structure and a new method for preparing the Micro-LED, and is beneficial to promoting commercial application of the Micro-LED.

The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a deep ultraviolet semiconductor light-emitting element, which comprises, from bottom to top, a substrate, a buffer layer, a first conductive semiconductor, a multi-quantum well, a conductive electron blocking layer, and a second conductive semiconductor, wherein the H concentration of the conductive electron blocking layer is 1E17-5E18cm ‑3 , O concentration is 1E17~1E18cm ‑3 By controlling the H / O content of the conductive electron blocking layer, the Al y Ga 1‑y The H / O content and ratio of the N material can effectively reduce the hole ionization energy of the Mg layer, improve the hole ionization efficiency, and increase the free hole carrier concentration after ionization to 1E18cm ‑3 above.

This application discloses an AlGaInP red micro-LED chip with a high Al composition polarization-induced barrier layer and its fabrication method. The core innovation lies in the use of an Al composition in the barrier layer of the quantum well structure. x2 Ga 1‑x2 ) y2 InP gradually changes to Al 0.5 In 0.5 The high Al composition structure of P elevates the valence band level to 250-320 meV, significantly enhancing carrier confinement capability. Simultaneously, the barrier layer employs low-concentration p-type doping, inducing the formation of a three-dimensional hole gas through the polarization effect of the gradual Al composition change, allowing the hole concentration to break through the doping limit and avoiding the luminescence quenching problem caused by high doping. This solves the core problems of insufficient carrier confinement, low hole injection efficiency, and poor high-temperature stability in existing red Micro-LED chips. The device's external quantum efficiency, high-temperature retention rate, and long-term reliability are all significantly improved. The fabrication process is compatible with existing production lines and is applicable to multiple fields.

The embodiment of the present disclosure provides a light-emitting diode with improved current spreading capability and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode comprises a light-emitting structure, a first passivation layer, a connecting electrode layer, a second passivation layer and a pad electrode layer. The connecting electrode layer comprises a plurality of first connecting electrodes and a plurality of second connecting electrodes arranged alternately and spaced apart in a strip shape in a first direction. The length direction of the first connecting electrodes and the second connecting electrodes is a second direction, and the first direction and the second direction intersect. Each first connecting electrode is electrically connected to a first semiconductor layer in a plurality of grooves through a plurality of first through holes penetrating the first passivation layer. Each second connecting electrode is electrically connected to a second semiconductor layer through a plurality of second through holes penetrating the first passivation layer. The embodiment of the present disclosure can improve the light-emitting efficiency and reliability of the LED and reduce the driving voltage of the LED.

The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor light-emitting element, which comprises, from bottom to top, a substrate, a first conductive semiconductor, a multi-quantum well, a conductive hole injection layer, and a second conductive semiconductor, wherein the H concentration of the conductive hole injection layer is 5E18-1E20cm ‑3 , O concentration is 1E17~5E18cm ‑3 By setting a conductive hole injection layer and controlling its C / H / O content ratio, the barrier height of electrons can be increased and the barrier height of holes can be reduced, effectively blocking electron overflow and improving the efficiency of hole injection into multiple quantum wells, thereby improving the radiation recombination efficiency of semiconductor light-emitting elements.

This invention proposes a gallium nitride-based semiconductor laser with a gradient peak rate electric field waveguide layer. The fitting curves of the In ion intensity distribution or In atom concentration distribution, the fitting curve of the peak rate electric field distribution, and the fitting curve of the saturated electron drift velocity distribution obtained from SIMS testing of the upper and lower waveguide layers with the gradient peak rate electric field all satisfy any one of the Logistic function, Logistic 5 function, or Nelder function, forming a high electric field barrier. Electrons transporting from the active region to the p-type layer must overcome this barrier height, suppressing electron leakage from the active region to the p-type layer. The low electric field matches the low-velocity transport of holes, avoiding enhanced hole scattering. High injection efficiency allows carriers in the active region to quickly reach the stimulated emission threshold. The saturated electron drift velocity gradually decreases from high to low, and the low saturated electron drift velocity on the active region side avoids punch-through leakage caused by high-speed electrons rushing through the active region.

The present invention provides a semiconductor epitaxial structure and a manufacturing method thereof, and an LED chip, comprising stacking an N-type semiconductor layer, a gate-eliminating layer, an active layer, and a P-type semiconductor layer in sequence on the surface of the substrate, and releasing excess electrons through epitaxial structure design, effectively improving electron concentration, increasing the probability of electron tunneling, improving crystal quality, and reducing the operating voltage of the LED, thereby improving the antistatic ability of the LED.

The present invention discloses a Micro-LED epitaxial wafer and a preparation method thereof, and Micro-LED, and relates to the field of semiconductor optoelectronic devices. The Micro-LED epitaxial wafer comprises a substrate, an N-type GaN layer, a first multi-quantum well layer, and a P-type GaN layer in sequence, wherein the first multi-quantum well layer comprises an alternately stacked quantum well layer and a first quantum barrier layer; the quantum well layer comprises a first GaN layer, a first InGaN layer, an InGaN layer, and a P-type GaN layer in sequence. x Ga 1‑ x N layer and AlN layer; the first quantum barrier layer includes a first AlGaN layer, an N-type Al α Ga 1‑α N layer, non-doped Al a Ga 1‑a N layer, N-type Al β Ga 1‑β N layer and the second GaN layer; the proportion of In component in the first InGaN layer increases, and its maximum value is ≤x; the Al component in the first AlGaN layer decreases, and its minimum value is ≥α. The implementation of the present invention can improve the luminous efficiency.

The invention discloses a deep ultraviolet LED (light-emitting diode) based on an AlN / GaN digital alloy structure. The deep ultraviolet LED structurally comprises a substrate; an n-type injection layer; a multi-quantum well active layer; a p-type electron blocking layer; a p-type injection layer; a p-type GaN layer; wherein the p-type injection layer is of a periodic digital alloy structure in which GaN and AlN grow alternately. According to the deep ultraviolet LED epitaxial structure, a GaN / AlN digital alloy structure is adopted to replace a traditional high-Al-component p-type injection layer, the activation energy of an acceptor of the p-type injection layer is reduced, the hole concentration can be improved, and the radiation recombination efficiency of carriers in an active region is remarkably improved by combining the structural design of multiple quantum wells.

The invention discloses a GaN-based miniature LED display unit and a preparation method thereof. The GaN-based miniature LED display unit structurally comprises a substrate, a GaN-based composite buffer layer, an N-type GaN layer, a mask layer containing a micropore array, a hexagonal close-packed N-type GaN hexagonal island structure, a quantum well prepared on the N-type GaN hexagonal island, a carrier regulation and control layer, a P-type In < x > Ga < 1-x > N layer and the like which are sequentially arranged from bottom to top. A light-emitting structure of the micro LED display unit is formed by the hexagonal close-packed N-type GaN hexagonal islands and the quantum wells, adverse effects caused by etching damage can be avoided by taking an independent mesa structure as a unit, the fringe effect of each light-emitting unit is effectively inhibited, and the brightness is improved; the light-emitting units are arranged on the basis of hexagonal close packing, the area of the epitaxial wafer can be effectively utilized to the maximum extent, and economic benefits are maximized. The structure effectively inhibits the negative influence of the traditional GaN-based micro LED preparation process on the lighting effect, and has important significance for the development of a GaN-based micro LED display.

The invention discloses a micro-LED structure with a driver and a preparation method of the micro-LED structure. The micro-LED structure comprises a gallium nitride (GaN) layer, a mask layer with micropores, a GaN three-dimensional triangular island, a high electron mobility transistor (HEMT) structure and a Micro-LED structure, wherein the upward crystal face of the GaN layer is a non-polar face, the HEMT structure is arranged on the inclined face of one side of the triangular island, and the Micro-LED structure is arranged on the inclined face of the other side of the triangular island. The GaN island of a three-dimensional structure is obtained by utilizing selected area epitaxy and combining with lateral epitaxy, the GaN island naturally forms a bilaterally symmetrical structure due to the crystal attribute, the HEMT and the Micro-LED structure are arranged on the two sides respectively, the HEMT on one side can be directly utilized to drive the Micro-LED on the other side, the problem that a traditional Micro-LED needs to be additionally driven is solved, and the GaN island can be used for driving the LED on the other side. And the constraint that micropores are current when a traditional selective area epitaxy MicroLED structure is adopted is avoided. Besides, the Micro-LED with an independent structure is grown on the inclined plane of the triangular island, so that the adverse effect of the traditional micromachining technology on the etching damage of the quantum well and the P-type layer can be avoided, the edge effect of each light-emitting unit is effectively inhibited, and the light-emitting efficiency is improved; the light-emitting units are arranged on the basis of close packing, the area of the epitaxial wafer can be effectively utilized to the maximum extent, and economic benefits are maximized.

This invention belongs to the technical fields of optoelectronic devices, spin optoelectronics, and organic-inorganic hybrid semiconductor materials. Specifically, it relates to a circularly polarized electroluminescent device based on a one-dimensional / three-dimensional perovskite heterostructure and its implementation method. The circularly polarized electroluminescent device includes a substrate, a bottom electrode layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a top electrode stacked sequentially. The light-emitting layer is a one-dimensional / three-dimensional perovskite heterostructure formed in situ by chiral one-dimensional perovskite and three-dimensional perovskite. This invention constructs a one-dimensional / three-dimensional perovskite heterostructure within the light-emitting layer, utilizing the chiral properties of the one-dimensional perovskite to induce lattice distortion in adjacent three-dimensional perovskite at the heterostructure interface. This results in intrinsic structural chirality and excited-state chirality in the three-dimensional perovskite light-emitting region, achieving stable circularly polarized electroluminescence without the need for an external magnetic field or spin injection, thus enabling the device to simultaneously achieve high luminous efficiency and good stability.