15results about How to "Improve radiative recombination efficiency" patented technology

This disclosure provides a light-emitting diode and its fabrication method, belonging to the field of light-emitting devices. The light-emitting diode includes: an epitaxial layer; the epitaxial layer includes an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, and a P-type semiconductor layer stacked sequentially; the multiple quantum well layer includes multiple stacked light-emitting units, each light-emitting unit including a stacked first quantum well sublayer, a quantum barrier layer, and a second quantum well sublayer; the thickness of the first quantum well sublayer is less than the thickness of the second quantum well sublayer, the thickness of the quantum barrier layer is less than the thickness of the first quantum well sublayer, and the In content in the first quantum well sublayer is greater than the In content in the second quantum well sublayer.

This invention discloses a III-V semiconductor epitaxial structure, its fabrication method, and its applications. The epitaxial structure includes a first buffer layer and a first interconnecting layer stacked together. The first interconnecting layer has a first protrusion structure with intermittent structures between it. It also includes a second buffer layer and a second interconnecting layer within the intermittent structures, the second interconnecting layer being composed of at least multiple independent second protrusion structures. The first and second protrusion structures can serve as the basis for epitaxial growth. The III-V semiconductor light-emitting layer grown based on the III-V semiconductor epitaxial structure provided by this invention forms light-emitting surfaces of various sizes and curvatures, greatly increasing the light-emitting area. It also enables the light-emitting layer to form quantum dot luminescence, and utilizes the quantum dot confinement effect to reduce the quantum Stark effect, improving the incorporation of light-emitting layer components. These combined effects significantly improve radiative recombination efficiency, ultimately enhancing the overall luminous intensity and efficiency of the device.

The invention provides a red-light nitride epitaxial wafer, a preparation method thereof and a Micro-LED. The red-light nitride epitaxial wafer comprises a sapphire substrate, an insertion structure, an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer, the insertion structure penetrates through the n-type nitride pattern structure layer, the light-emitting layer and part of the p-type metal nitride layer and comprises a composite Si nano-column and a composite regulation and control layer, and the composite Si nano-column comprises a Si nano-column and a semi-ellipsoid structure; the composite regulation and control layer comprises a protection layer and a buffer layer, the protection layer is arranged on the outer wall of the Si nano-column, and the buffer layer is arranged on the area between the adjacent composite Si nano-columns; and an n-type nitride pattern structure layer, a light-emitting layer and a p-type metal nitride layer are laminated on the buffer layer between the adjacent composite Si nano columns. The In component merging and uniformity can be improved, the light-emitting efficiency and brightness of the Micro-LED are improved, the half-peak width of the light-emitting wavelength is reduced, and the color purity of display application is improved.

The application provides a semiconductor laser element, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper confinement layer; a topological Dirac electron point layer is arranged between the upper waveguide layer and the electron blocking layer, and a topological Dirac electron point layer is arranged between the electron blocking layer and the upper confinement layer; the active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3 >= m >= 1; the well layer is any one or any combination of InGaN, InN, AlInN and GaN, and the thickness is 10-80 angstrom meters; and the barrier layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN and AlInN, and the thickness is 10-120 angstrom meters. The semiconductor laser element provided by the application can generate non-local effects between electrons and electrons through the cage lattice structure of the arranged topological Dirac electron point layer, and can inhibit the charge density wave and the quantum limited Stark effect.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The invention discloses a green light Micro-LED epitaxial structure and a preparation method thereof, and relates to the technical field of semiconductor devices. A multi-quantum well light-emitting layer in the epitaxial structure comprises an N-polarity blue light multi-quantum well layer, an N-polarity green light multi-quantum well layer, a Ga-polarity green light multi-quantum well layer and an N-polarity blue light end quantum well layer which are stacked in sequence. The N-polarity blue light multi-quantum well layer, the N-polarity green light multi-quantum well layer and the N-polarity blue light end quantum well layer each comprise an N-polarity well front gradient InGaN layer, an N-polarity quantum well InGaN layer, an N-polarity well rear gradient InGaN layer and an N-polarity quantum barrier GaN layer which are sequentially, periodically and alternately stacked. The Ga polarity green light multi-quantum well layer comprises a Ga polarity well front carrier binding layer, a Ga polarity light-emitting quantum well InGaN layer, a Ga polarity well rear carrier binding layer and a Ga polarity quantum barrier GaN layer which are sequentially, periodically and alternately stacked. According to the invention, the radiation recombination efficiency of the active region under the low working current density can be improved, and the lighting effect of the Micro-LED chip under the low working current density is further improved.

The application relates to a gallium arsenide-based super-radiation light-emitting diode and a preparation method thereof, and mainly solves the technical problem that when a cavity surface is coated with an anti-reflection film in combination with a non-pumping absorption zone and a curved waveguide, an inclined waveguide, a tapered waveguide and other technologies to suppress light oscillation in a resonance cavity, resonance gain still exists, which has a negative impact on the power and other performances of the gallium arsenide-based super-radiation light-emitting diode. The gallium arsenide-based super-radiation light-emitting diode comprises a substrate layer, an epitaxial layer arranged on the substrate layer, and a metal layer arranged on the epitaxial layer; the metal layer is in a straight line type structure; the light-out surface and the back-light surface of the substrate layer and the epitaxial layer are arranged in parallel to each other, and the light-out surface and the back-light surface are both arranged in an inclined manner along the direction from the back-light surface to the light-out surface; an obtuse angle formed by the light-out surface and the back-light surface with a horizontal direction is defined as an inclination angle alpha, and the value of alpha is 100-110 degrees; the light-out surface is coated with an AR reflection film, and the reflectivity is 0.5-50%; and the back-light surface is coated with an HR reflection film, and the reflectivity is greater than 90%.

This invention discloses a low-current-density blue Micro-LED epitaxial structure and its fabrication method, relating to the field of semiconductor device technology. The multi-quantum-well emitting layer of the epitaxial structure comprises, sequentially stacked along the epitaxial direction, a violet multi-quantum-well layer, a light blue multi-quantum-well layer, a blue multi-quantum-well layer, and a violet-light-end quantum-well layer. Each of the violet, light blue, blue, and violet-light-end quantum-well layers includes, sequentially and periodically alternating N-polarity gradient InGaN layer before the well, an N-polarity InGaN quantum-well layer, an N-polarity gradient AlGaN layer after the well, and a Ga-polarity GaN quantum barrier layer. The N-polarity gradient InGaN layer before the well is an N-polarity InGaN material with an increasing In content along the epitaxial direction. This invention can significantly improve the luminous efficacy of Micro-LED chips at low operating current densities.

The invention provides a multilayer quantum well structure, an epitaxial structure thereof and a quaternary system AlGaInP light emitting diode, and relates to the technical field of light emitting diodes. The multi-layer quantum well structure comprises a plurality of quantum well layers and a plurality of quantum barrier layers which are periodically stacked, the quantum well layers and the quantum barrier layers are made of AlGaInP, a protection layer is arranged between the quantum well layer and the quantum barrier layer in each period and comprises an AlGaP layer and an AlGaInP layer, the AlGaP layer is arranged between the quantum well layer and the AlGaInP layer, and the AlGaInP layer is arranged between the quantum well layer and the AlGaInP layer. The Al component in the AlGaInP layer is set to be reduced from a first preset value to a second preset value from bottom to top, the In component is set to be increased from zero to a third preset value from bottom to top, the Al component in the AlGaInP layer is any value ranging from 0.3 to 0.5, the Al component in the quantum barrier layer is the second preset value, and the In component in the quantum barrier layer is the third preset value. The lattice matching degree between every two adjacent layers in the multi-layer quantum well structure is high, TMIN diffusion is prevented, meanwhile, the protection layer can limit electron overflow, and the electron migration rate is reduced.

This application discloses an AlGaInP red micro-LED chip with a high Al composition polarization-induced barrier layer and its fabrication method. The core innovation lies in the use of an Al composition in the barrier layer of the quantum well structure. x2 Ga 1‑x2 ) y2 InP gradually changes to Al 0.5 In 0.5 The high Al composition structure of P elevates the valence band level to 250-320 meV, significantly enhancing carrier confinement capability. Simultaneously, the barrier layer employs low-concentration p-type doping, inducing the formation of a three-dimensional hole gas through the polarization effect of the gradual Al composition change, allowing the hole concentration to break through the doping limit and avoiding the luminescence quenching problem caused by high doping. This solves the core problems of insufficient carrier confinement, low hole injection efficiency, and poor high-temperature stability in existing red Micro-LED chips. The device's external quantum efficiency, high-temperature retention rate, and long-term reliability are all significantly improved. The fabrication process is compatible with existing production lines and is applicable to multiple fields.

The embodiment of the present disclosure provides a light-emitting diode with improved current spreading capability and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode comprises a light-emitting structure, a first passivation layer, a connecting electrode layer, a second passivation layer and a pad electrode layer. The connecting electrode layer comprises a plurality of first connecting electrodes and a plurality of second connecting electrodes arranged alternately and spaced apart in a strip shape in a first direction. The length direction of the first connecting electrodes and the second connecting electrodes is a second direction, and the first direction and the second direction intersect. Each first connecting electrode is electrically connected to a first semiconductor layer in a plurality of grooves through a plurality of first through holes penetrating the first passivation layer. Each second connecting electrode is electrically connected to a second semiconductor layer through a plurality of second through holes penetrating the first passivation layer. The embodiment of the present disclosure can improve the light-emitting efficiency and reliability of the LED and reduce the driving voltage of the LED.

This invention proposes a gallium nitride-based semiconductor laser with a gradient peak rate electric field waveguide layer. The fitting curves of the In ion intensity distribution or In atom concentration distribution, the fitting curve of the peak rate electric field distribution, and the fitting curve of the saturated electron drift velocity distribution obtained from SIMS testing of the upper and lower waveguide layers with the gradient peak rate electric field all satisfy any one of the Logistic function, Logistic 5 function, or Nelder function, forming a high electric field barrier. Electrons transporting from the active region to the p-type layer must overcome this barrier height, suppressing electron leakage from the active region to the p-type layer. The low electric field matches the low-velocity transport of holes, avoiding enhanced hole scattering. High injection efficiency allows carriers in the active region to quickly reach the stimulated emission threshold. The saturated electron drift velocity gradually decreases from high to low, and the low saturated electron drift velocity on the active region side avoids punch-through leakage caused by high-speed electrons rushing through the active region.

The invention discloses a deep ultraviolet LED (light-emitting diode) based on an AlN / GaN digital alloy structure. The deep ultraviolet LED structurally comprises a substrate; an n-type injection layer; a multi-quantum well active layer; a p-type electron blocking layer; a p-type injection layer; a p-type GaN layer; wherein the p-type injection layer is of a periodic digital alloy structure in which GaN and AlN grow alternately. According to the deep ultraviolet LED epitaxial structure, a GaN / AlN digital alloy structure is adopted to replace a traditional high-Al-component p-type injection layer, the activation energy of an acceptor of the p-type injection layer is reduced, the hole concentration can be improved, and the radiation recombination efficiency of carriers in an active region is remarkably improved by combining the structural design of multiple quantum wells.

This invention belongs to the technical fields of optoelectronic devices, spin optoelectronics, and organic-inorganic hybrid semiconductor materials. Specifically, it relates to a circularly polarized electroluminescent device based on a one-dimensional / three-dimensional perovskite heterostructure and its implementation method. The circularly polarized electroluminescent device includes a substrate, a bottom electrode layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a top electrode stacked sequentially. The light-emitting layer is a one-dimensional / three-dimensional perovskite heterostructure formed in situ by chiral one-dimensional perovskite and three-dimensional perovskite. This invention constructs a one-dimensional / three-dimensional perovskite heterostructure within the light-emitting layer, utilizing the chiral properties of the one-dimensional perovskite to induce lattice distortion in adjacent three-dimensional perovskite at the heterostructure interface. This results in intrinsic structural chirality and excited-state chirality in the three-dimensional perovskite light-emitting region, achieving stable circularly polarized electroluminescence without the need for an external magnetic field or spin injection, thus enabling the device to simultaneously achieve high luminous efficiency and good stability.

The application relates to the technical field of semiconductors, in particular to a vertical cavity surface emitting laser and a preparation method thereof. The laser comprises, from bottom to top, an n-face electrode layer, a substrate layer, a buffer layer, an n-DBR layer, an SiO2 insulating layer located at the outer periphery above the n-DBR layer, an n-lower oxidation limiting structure layer, a lower space layer, a quantum well active region, an upper space layer, a p-upper oxidation limiting structure layer, a p-DBR layer, a contact layer and a p-face electrode layer which are sequentially arranged in the center of the SiO2 insulating layer from bottom to top to form a cylindrical platform. By adopting the symmetrical oxidation limiting structure, more carriers are limited in the oxidation hole, the output power and the electro-optical conversion efficiency can be improved, and the number and distribution of transverse modes can be controlled.