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LED epitaxial wafer growing on glass substrate and preparation method of LED epitaxial wafer

A technology for LED epitaxial wafers and glass substrates, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of expensive sapphire and SiC substrates, high prices, and high LED manufacturing costs. The effect of reducing production costs

Active Publication Date: 2017-05-31
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the luminous efficiency of LED has surpassed that of fluorescent lamps and incandescent lamps, the luminous efficiency of commercial LEDs is still lower than that of sodium lamps (150lm / W), and the price per lumen / watt is relatively high.
At present, most GaN-based LEDs are based on epitaxial growth on sapphire and SiC substrates. Large-scale sapphire and SiC substrates are expensive, resulting in high LED manufacturing costs.

Method used

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  • LED epitaxial wafer growing on glass substrate and preparation method of LED epitaxial wafer
  • LED epitaxial wafer growing on glass substrate and preparation method of LED epitaxial wafer

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Embodiment 1

[0039] Such as figure 1 As shown, the LED epitaxial wafer grown on the glass substrate prepared in this embodiment includes the aluminum metal layer 11 grown on the glass substrate 10, the silver metal layer 12 grown on the aluminum metal layer 11, and the silver metal layer 12 grown on the silver metal layer. AlN buffer layer 13 on layer 12, GaN buffer layer 14 grown on AlN buffer layer 13, undoped GaN layer 15 grown on GaN buffer layer 14, n-type doped GaN layer grown on undoped GaN layer 15 Doped GaN thin film 16, InGaN / GaN quantum well 17 grown on n-type doped GaN thin film 16, p-type doped GaN thin film 18 grown on InGaN / GaN quantum well 17.

[0040] The preparation method of the LED epitaxial wafer grown on the glass substrate of the present embodiment comprises the following steps:

[0041] (1) Selection of substrate: use ordinary glass substrate;

[0042] (2) Substrate surface polishing and cleaning treatment;

[0043] The surface polishing of the substrate is speci...

Embodiment 2

[0057] The preparation method of the LED epitaxial wafer grown on the glass substrate of the present embodiment comprises the following steps:

[0058] (1) Selection of substrate: use ordinary glass substrate;

[0059] (2) Substrate surface polishing and cleaning treatment;

[0060] The surface polishing of the substrate is specifically:

[0061] First, the surface of the glass substrate is polished with diamond slurry, and the surface of the substrate is observed with an optical microscope until there are no scratches, and then the chemical mechanical polishing method is used for polishing;

[0062] The cleaning is specifically:

[0063] Put the glass substrate into deionized water and ultrasonically clean it at room temperature for 5 minutes to remove the dirt particles on the surface of the glass substrate, then wash it with acetone and ethanol in sequence to remove the surface organic matter, and dry it with high-purity dry nitrogen;

[0064] (3) Growth of the aluminum ...

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Abstract

The invention discloses an epitaxial wafer growing on a glass substrate. The epitaxial wafer comprises an aluminum metal layer growing on the glass substrate, a silver metal layer growing on the aluminum metal layer, an AlN buffer layer growing on the silver metal layer, a GaN buffer layer growing on the AlN buffer layer, a non-doped GaN layer growing on the GaN buffer layer, an n-type doped GaN film growing on the non-doped GaN buffer layer, an InGaN / GaN multiple-quantum trap growing on the n-type doped GaN film and a p-type doped GaN film growing on the InGaN / GaN multiple-quantum trap. The invention further discloses a preparation method of the LED epitaxial wafer growing on the glass substrate. The LED epitaxial wafer growing on the glass substrate has the advantages of low defect density, good crystallization quality and excellent light emitting performance.

Description

technical field [0001] The invention relates to an LED epitaxial wafer and a preparation method thereof, in particular to an LED epitaxial wafer grown on a glass substrate and a preparation method thereof. Background technique [0002] Light-emitting diode (LED), as a new type of solid-state lighting source and green light source, has outstanding features such as small size, low power consumption, environmental protection, long service life, high brightness, low heat and colorful, and is widely used in outdoor lighting, commercial lighting and decoration Engineering and other fields have a wide range of applications. At present, under the background of the increasingly serious problem of global warming, saving energy and reducing greenhouse gas emissions has become an important issue faced by the whole world. A low-carbon economy based on low energy consumption, low pollution, and low emissions will become an important direction of economic development. In the field of lig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/12H01L33/00
CPCH01L33/005H01L33/12H01L33/22
Inventor 李国强高芳亮王文樑
Owner SOUTH CHINA UNIV OF TECH
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