Ultraviolet LED epitaxial structure with novel quantum barrier structure and preparation method thereof

A technology of epitaxial structure and quantum barrier, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low internal quantum efficiency and low luminous efficiency, so as to slow down the polarization effect, improve the radiation recombination efficiency, and improve the internal quantum efficiency Effect

Active Publication Date: 2019-08-06
UNILUMIN GRP
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  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the technical problem to be solved by the present invention is to provide a UV LED epitaxial structure with a novel quantum barrier structure and its preparation method to solve the low internal quantum efficiency and low luminous efficiency of the UV LED epitaxial structure in the prior art. The problem

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  • Ultraviolet LED epitaxial structure with novel quantum barrier structure and preparation method thereof
  • Ultraviolet LED epitaxial structure with novel quantum barrier structure and preparation method thereof

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Embodiment 1

[0028] The first embodiment of the present invention provides an ultraviolet LED epitaxial structure with a novel quantum barrier structure, such as figure 1 As shown, the ultraviolet LED epitaxial wafer includes from bottom to top: substrate, buffer layer, N-type aluminum gallium nitride layer, light emitting layer, electron blocking layer, P-type aluminum gallium nitride layer and P-type gallium nitride layer, preferably , the N-type AlGaN layer is Al a Ga 1-a N, where 0n Ga 1-n N, wherein the value range of the aluminum component n is y

[0029] The light-emitting layer includes at least 3 periods of quantum barrier layers and quantum well layers, and the quantum well layers are Al b Ga 1- b N, wherein the value range of aluminum component b is 0≤b figure 2 As shown, each quantum barrier includes Al from bottom to top x Ga 1-x N layer, Al y Ga 1-y N layer and Al z Ga 1-z N layer; except the first and last quantum barriers from the bottom up in the light-emit...

Embodiment 2

[0034] The second embodiment of the present invention provides a method for preparing an ultraviolet LED epitaxial structure with a novel quantum barrier structure, comprising the following steps:

[0035] The substrate is a C-plane sapphire substrate; the sapphire substrate is placed in a metal organic compound chemical vapor deposition epitaxial reaction chamber, a hydrogen environment is set at a temperature of 1280° C., and the substrate is baked for 5 minutes;

[0036] The buffer layer is grown on the substrate, the growth temperature of the buffer layer is 1200° C., and the growth thickness is 2.5-3 μm.

[0037] The N-type AlGaN layer is grown on the buffer layer, the growth temperature of the N-type AlGaN layer is controlled at 1200° C., the thickness of the N-type AlGaN layer is controlled at 3 μm, and the N-type doping concentration is 2 ×10 18 ㎝ -3 .

[0038] A nitrogen environment is set at a temperature of 1000-1200° C., and a luminescent layer is grown on the N...

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Abstract

The invention discloses an ultraviolet LED epitaxial structure with a novel quantum barrier structure and a preparation method thereof. The ultraviolet LED epitaxial sheet comprises a substrate, a buffer layer, an N-type AlGaN layer, a luminous layer, an electron barrier layer, a P-type AlGaN layer and a P-type GaN layer in turn from bottom to top. Each quantum barrier of the luminous layer comprises an Al<x>Ga<1-x>N layer, an Al<y>Ga<1-y>N layer and an Al<z>Ga<1-z>N layer in turn from bottom to top. For all the quantum barriers from bottom to top in the luminous layer except the first and last quantum barriers, the aluminum molecule content y in the Al<y>Ga<1-y>N layers is a fixed value, the aluminum molecule content x in the Al<x>Ga<1-x>N layers increases gradually from an initial valueb to y, and the aluminum molecule content z in the Al<z>Ga<1-z>N layer decreases gradually from an initial value y to b. The epitaxial structure provided by the invention can alleviate the quantum confinement Stark effect in multi-quantum wells and the polarization effect between the luminous layer and the electron barrier layer, so as to improve the radiation recombination efficiency of electronsand holes, reduce the leakage of electrons, and finally, improve the internal quantum efficiency of ultraviolet LEDs.

Description

technical field [0001] The invention relates to the technical field of LED semiconductors, in particular to an ultraviolet LED epitaxial structure with a novel quantum barrier structure and a preparation method thereof. Background technique [0002] Because ultraviolet LEDs have the advantages of small size, low energy consumption, long life, environmental protection and non-toxicity, etc., and they have broad market value in a wide range of fields such as biological sterilization, ultraviolet curing, and military communications. Therefore, it has attracted the attention of researchers and is expected to become a substitute for the traditional mercury lamp as a UV light source. [0003] However, AlGaN with a high aluminum composition is required to prepare ultraviolet LEDs, especially to prepare deep purple LEDs with emission wavelengths in the range of 200-380nm. As far as the current technology is concerned, it is still very difficult to prepare high-quality materials wit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/14H01L33/32H01L33/00
CPCH01L33/007H01L33/06H01L33/145H01L33/325
Inventor 郑悠李光
Owner UNILUMIN GRP
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