181results about How to "Reduced polarization effects" patented technology

Arrangement, system and method for a polarization effect for a interferometric signal received from sample in an optical coherence tomography (“OCT”) system are provided. In particular, an interferometric information associated with the sample and a reference can be received. The interferometric information is then processed thereby reducing a polarization effect created by a detection section of the OCT system on the interferometric signal. Then, an amount of a diattenuation of the sample is determined. The interferometric information can be provided at least partially along at least one optical fiber which is provided in optical communication with and upstream from a polarization separating arrangement. In another exemplary embodiment of the present invention, apparatus and method are provided for transmitting electromagnetic radiation to the sample. For example, at least one first arrangement can be provided which is configured to provide at least one first electromagnetic radiation. A frequency of radiation provided by the first arrangement can vary over time. At least one polarization modulating second arrangement can be provided which is configured to control a polarization state of at least one first electromagnetic radiation so as to produce at least one second electromagnetic radiation. Further, at least one third arrangement can be provided which is configured to receive the second electro-magnetic radiation, and provide at least one third electromagnetic radiation to the sample and at least one fourth electromagnetic radiation to a reference. The third and fourth electromagnetic radiations may be associated with the second electromagnetic radiation.

Disclosed herein are methods and devices for preconcentrating and separating analytes such as proteins and polynucleotides in microchannels. As disclosed, at least one size-exclusion polymeric element is adjacent to processing area or an assay area in a microchannel which may be porous polymeric element. The size-exclusion polymeric element may be used to manipulate, e.g. concentrate, analytes in a sample prior to assaying in the assay area.

Systems and methods for implementing per-session load balancing of packets that increase traffic sharing and reduce systematic unequal distribution of traffic are provided by virtue of one embodiment of the present invention. A method for operating a selected router is provided that uses a load balancing algorithm that is configured to de-correlate distribution of sessions among the active paths at the selected router relative to distributions of sessions of other algorithms at other routers of said network. Packets arriving at the selected router are assigned to an output path according to the load balancing algorithm. A method of routing a packet received at a router having an associated identifier is provided. The source address and a destination address of the packet are obtained. An output path is selected according to a load balancing algorithm that uses the associated identifier, the source address, and the destination address as inputs, and the packet is routed to the output interface associated with the selected output path. A look-up table that is configured using the identifier can be used in selecting the output path. A router storing an identifier assigned to the router is provided; the identifier is used in determining per-session routing of incoming packets.

To provide a method for measuring internal impedance of a secondary battery, an charging current or discharging current is used as an input current of the secondary battery, the input current and a response voltage is measured, a plurality of current measuring values and voltage measuring values are obtained on a time line; each frequency components of the input current and the response voltate iscalculated under a predetermining frequency by performing Fourier transform the plurality of current measuring values and the plurality of voltage measuring values; and the ratio of the frequency component of the input current and the frequency component of the response voltage are obtained, and the internal impedance of the secondary battery is calculated under the predetermining frequency.

The invention discloses a method for enhancing the luminous efficiency of a multiquantum well of a semiconductor diode. A novel gradient growth method is adopted as a multiquantum well growth manner of an epitaxial wafer structure of a light emitting diode; in the multiquantum well structure, InGaN components in the first several periods are gradually increased, so that the stress generated in the growth process of suddenly transferring GaN to InGaN with high In components is eased, and thus the polarization effect is reduced, the crystal quality of the quantum well is improved, and the compounding possibility is increased. In addition, the thicknesses of barrier layers in the first several periods are gradually reduced, the speed of electrons and the traversing possibility of electrons can be reduced by the barrier layers with larger thickness, the traversing possibility of electron holes can be increased by the barrier layers with smaller thickness, so that the electrons and the electron holes are distributed more uniformly and the problem of the reduced efficiency under high current injection is avoided, and therefore the luminous efficiency of the multiquantum well is improved.

The invention discloses a novel epitaxy method for growing an ultraviolet LED. The method can obviously improve the crystal quality of ultraviolet LED epitaxial growth materials and improve the light intensity of the ultraviolet LED. According to the method, an Al component gradient method is adopted to carry out doping in AlN, stress of crystal lattice adaption from a substrate layer can be released gradually, gradient component growth can reduce defects of crystal lattice adaption of an interface, the crystal quality of a material interface can be improved, slip dislocation can be carried out in gradient growth, penetration dislocation segregation is achieved, penetration dislocation is well stopped from entering a quantum well area, a quite good substrate is provided for growth of the quantum well, influences on quantum well growth caused by stress generated due to the crystal lattice adaption are reduced greatly, the integral crystal quality of materials is improved, the electron hole wave function spatial overlapping of a quantum well layer is enhanced, and optical and electrical properties of the whole ultraviolet LED are improved.

The invention provides a modified lithium nickel cobalt manganese oxide cathode material which comprises a lithium nickel cobalt manganese oxide material, LiMnPO4 combined on the surface of the lithium nickel cobalt manganese oxide material, and graphene combined on the surface of LiMnPO4. According to the invention, the lithium nickel cobalt manganese oxide material is modified through double combination, wherein a layer of LiMnPO4 coating the surfaces of particles can improve the interface stability of the material under a high cut-off voltage, and graphene coating at the outer layer can improve the electronic conductivity of the material and weak the polarization effect.

The invention relates to the technical field of lithium ion batteries, in particular to a lithium iron phosphate battery positive electrode active material capable of reducing the polarization effectof the lithium iron phosphate battery and improving the electrochemical (rate capacity) of the lithium iron phosphate battery as well as a preparation method and application. The active material is divided into two layers, i.e. a first layer of active material and a second layer of active material coating the surface of the first layer of active material; the first layer of active material is prepared from the following components in parts by weight: 80 to 95 parts of lithium iron phosphate positive electrode material, 3 to 12 parts of conducting agent, 3 to 10 parts of category-I binder; andthe second layer of active material is prepared from the following components in parts by weight: 85 to 98 parts of lithium iron phosphate positive electrode material, 1 to 8 pars of conducting agent,and 5 to 8 parts of category-II binder. The battery polarization of a double-layer lithium iron phosphate positive electrode material pole piece prepared by adopting the modification method disclosedby the invention is greatly reduced compared to that of the ordinary lithium iron phosphate pole piece containing the same conducting agent, so that the rate capacity of the lithium iron phosphate isapparently improved. Meanwhile, the circulating performance of the product is excellent.

The invention relates to a preparation method for a dynamic NCM (nickel-cobalt-manganese) anode material. The invention belongs to the technical field of anode materials for lithium ion batteries. The preparation method includes: (Step 1) preparation of precursor NixCoyMnzM1-x-y-z(OH)2 (M is one or both of Al and Y): (1) NiSO4.6H2O, CoSO4.7H2O, MnSO4.H2O, Al(NO3)3.9H2O and Y(NO3)3.6H2O are weighed to prepare mixed salt solution; an NaOH precipitant and an ammonia complexing agent are mixed; (2) two solutions converge to react, so that NixCoyMnzMl-x-y-z(OH)2 suspension is obtained; (3) a solid and liquid are separated, and a filter cake is dried; (4) a magnetic substance is removed; (Step 2) lithium-containing sintering for the first time: Li2CO3 and NixCoyMnzMl-x-y-z(OH)2 powder are weighed, mixed and sintered; (Step 3) liquid phase coating of 0.5wt percent of Al(NO)3: Al(NO3)3 solution is prepared, a pH value is regulated by ammonia, and Al(OH)3 is coated by a liquid phase; suspension is filter-pressed, and a filter cake is dried; (Step 4) lithium-containing sintering for the second time: Li2CO3, an Al(OH)3-coated first sintered material and TiO2 are weighed, mixed and sintered; (Step 5) a magnetic substance is removed, and thereby the finished dynamic NCM anode material is obtained. The preparation method has the advantages of simple process, low material cost, good comprehensive electrochemical properties, suitability for mass operation and the like.

A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or semipolar (Ga,Al,In,B)N substrate or template and a portion of the carrier gas used during growth is comprised of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga,Al,In,B)N thin films grown by the present invention.

The invention provides a modification method for improving electrochemical performance of a lithium-rich manganese-based material. The modification method is characterized in that a three-dimensionalconductive network of an active substance of a cathode material of the lithium-rich manganese-based material is prepared from one or more of two-dimensional conductive agent graphene, carbon nano-tubes and carbon fibers, one or more of a one-dimensional conductive agent, an SP conductive agent, acetylene black and conductive graphite as well as a zero-dimensional conductive agent by compositing. Compared with a traditional pole piece, the prepared lithium-rich manganese-based material cathode piece with the comprehensive three-dimensional conductive network has higher electron conductivity andlithium ion diffusion rate, and the active substance is more tightly combined with a current collector, so that the polarization effect of a lithium-rich manganese-based material battery can be greatly reduced, the rate performance of the battery is obviously improved, and the cycle stability of the battery can also be improved. The method is convenient to operate and has simple steps and high practicality.

The invention discloses a management method and device for an electric automobile low-tension battery. The management method comprises steps that a power supply management system is regularly wakenedup; voltage detection is conducted to the low-tension battery by the wakened-up power supply management system and whether electricity supply is required is detected; if required, a mode of the electric automobile is detected; if the mode is a trickle-charge mode, a vehicle-mounted battery charger is started, so electricity can be supplied to the low-tension battery by the external power supply; if the mode is a driving mode, a DCDC controller is started and electricity is supplied to the low-tension battery by a power battery; through regular detection to the voltage of the low-tension battery, whether electricity supply is required can be determined according to a detection result; the low-tension battery of the electric automobile can be automatically powered and problems of low-tensionbattery damage and short service life due to long-time electricity shortage when electricity cannot be automatically supplied to the low-tension battery; different electricity supply modes are employed upon different modes; low-tension battery can be effectively protected; and service life of the low-tension battery can be prolonged.

The invention discloses a GaN-based MS grid enhancement type high electron mobility transistor and a manufacture method thereof which mainly resolve the problems of low current density and poor reliability of a GaN-based enhancement type device. The structure of the device is that a transition layer (2) and a GaN main buffer layer (3) are sequentially arranged on a lining (1), a groove (4) is etched in the middle of the GaN main buffer layer, an AlGaN main barrier layer (5) is respectively arranged above the GaN mian buffer layer (3) on two sides of the groove, and a GaN auxiliary buffer layer (6) and an AlGaN auxiliary barrier layer (7) are sequentially arranged on the inner wall of the groove and the surface of the AlGaN main barrier layer (5) on two sides of the groove. A source electrode (8), a drain electrode (9), a grid electrode (11) and a medium layer (10) are arranged on the AlGaN secondary barrier layer (7). The source electrode (8) and the drain electrode (9) are respectively located on two sides above the AlGaN auxiliary barrier layer (7), the grid electrode (11) is located in the middle above the AlGaN auxiliary barrier layer (7), and the medium layer (10) is distributed on an area outside the source electrode, the drain electrode and the grid electrode. The transistor has the advantages of being good in enhancement type characteristic, high in current density, high in breakdown voltage, simple and mature in manufacture process and high in reliability, thereby being capable of being used in high temperature switch devices and digital circuits.

The invention relates to a pure water machine, in particular to a water yield and water quality monitoring alarm for the pure water machine, and belongs to the fluid on-line detection technical field of flow monitoring, conductivity monitoring and alarming. A water yield detection circuit is composed by connection between a normal close end of a high voltage switch and a signal collecting end of a microcontroller unit (MCU); a select switch of conductivity alarming value indicated by total dissolved solids (TDS) is connected with the MCU; a water yield data reset switch is connected with the MCU; a sound alarming device and a display device are connected with the MCU to form an alarming circuit which has functions of real-time monitoring and alarming of water quality and sound prompt for filter element renewal. The water yield and water quality monitoring alarm has advantages that the product structure is simple, the cost is low, the installation is convenient, the monitoring is accurate; complex setting and operation by users are not needed; users can be informed of the working condition of the pure water machine in time, and be warned to change the filter element and a reverse osmosis membrane; and sanitation safety of drinking water of users is well guaranteed.

The invention discloses a growth method for a light-emitting diode epitaxial wafer, and belongs to the technical field of a semiconductor. The growth method comprises the steps of enabling a low-temperature buffer layer, a high-temperature buffer layer, an N type layer, an MQW layer and a P type layer to be grown on a substrate in sequence, wherein the MQW layer comprises an InGaN quantum well layer and a GaN quantum barrier layer which are laminated alternately; the quantum well layer comprises a first type quantum well, a second type quantum well, and a third type quantum well; the growth temperature of the quantum well layers in the first type quantum well is lowered layer by layer; the In content of the quantum well layers in the second type quantum well is changed layer by layer; the ratio of the In content to Ga content in the quantum well layers in the third type quantum well is decreased layer by layer; and the quantum well layers belong to the first type quantum well, the second type quantum well layer and the third type quantum well in the growth direction of the light-emitting diode epitaxial wafer in sequence. By adoption of the growth method, the overlapping degree of an electron wave function and a hole wave function can be effectively improved, and the light emitting efficiency of the LED is finally improved.

The invention discloses a gallium nitride-based LED epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. The gallium nitride-based LED epitaxial wafer includes a substrate, and a group including a buffer layer, an undoped GaN layer, an N-type layer, a multi-quantum well layer, an electron barrier layer, a P-type layer, and a P-type contact layerwhich are successively grown on the substrate, wherein the multi-quantum quantum well layer comprises alternately grown InGaN quantum well layers and composite quantum barrier layers; each compositequantum barrier layer comprises a first quantum barrier layer, a second quantum barrier layer and a third quantum barrier layer which are successively stacked; the first quantum barrier layer and thethird quantum barrier layer are both AlInGaN layers; the second quantum barrier layer is an AlGaN layer; and the Al components in the second quantum barrier layer gradually increases and then gradually decreases along the stacking direction of the epitaxial wafer. The LED epitaxial wafer provided by the invention can suppress a decrease in the luminous efficiency of the LED under large current injection and improve the luminous efficiency of the LED.

The invention provides a light-emitting diode epitaxial wafer and a preparation method thereof. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, a three-dimensional nucleating layer, a two-dimensional recovery layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer and a P-type layer which are sequentially stacked on the substrate, the multi-quantum well layer comprises x mixed polarity quantum well layers and quantum barrier layers which are periodically and alternately arranged; and the mixed polarity quantum well layer comprises y N polar surface quantum well layers and Ga polar surface quantum well layers which are periodically and alternately arranged. The quantum well solves the problem that the luminous efficiency of an LED epitaxial wafer is reduced due to energy band bending and inclination caused by a polarization electric field in an existing quantum well.

The invention discloses a polarization calibration and compensation device of polarization laser radar. The polarization calibration and compensation device comprises a polarization calibration portion and a polarization compensation portion. The polarization calibration portion comprises a laser. A first 1/4 lambda wave plate, a first 1/2 lambda wave plate, a beam expander, a laser radar system, a polarizer, a convergent mirror and an energy meter are sequentially arranged on the light beam of the laser. The polarization compensation portion comprises a rotary controller. A second 1/4 lambda wave plate, a third 1/4 lambda wave plate and a second 1/2 lambda wave plate are connected to the rotary controller through cables. The polarization compensation portion is arranged between the laser radar system and the polarizer. The second 1/4 lambda wave plate, the third 1/4 lambda wave plate and the second 1/2 lambda wave plate are sequentially arranged on the light beam of the laser. The invention further discloses a polarization calibration and compensation method of the polarization laser radar. The polarization calibration and compensation device and method of the polarization laser radar carry out accurate calibration and compensation on the laser radar system, and the polarization influences of an optical system are eliminated.

The invention relates to smart concrete, in particular to CCCW-mixing graphite smart concrete formed by adding CCCW concrete mixture and graphite into base materials comprising silicate cement and sand, wherein the mass ratio of cement to sand is 1 to 1; and other components in percentage by weight to the total mass of the cement and the sand are as follows: 1 to 2 percent of CCCW concrete mixture and 5 to 25 percent of graphite. By utilizing the tunneling conducting effect between the contact electric conduction of the graphite and the electric conduction phase, the invention forms the graphite electrical conduction concrete with smart property, and has the advantages of favorable electric conduction, high mechanical property, stable electrical conductivity and pressure-sensitivity, simple preparation, lower price, and the like; and the material can be utilized for manufacturing a concrete structure sensor element, can be used for the effective execution of the health supervision of the concrete structure and can also be used as an industrial anti-static material, an electrical engineering material and an electrothermal material.

The invention includes methods and apparatuses to adjust an optical signal transmitted through an optical amplifier, such as in a wavelength division multiplexed optical network. The methods and apparatus of the invention calculate polarization effects which cause degradation to the optical signal. A measurement of the polarization-related degradation of an optical signal is calculated by using at least one reference signal. In some embodiments of the invention, the reference signal is depolarized or has scrambled polarizations. The invention is typically used in long-haul optical networks.

The invention discloses a P-type gate enhanced HEMT device and a manufacturing method thereof. The method comprises steps that a heterojunction is manufactured, a gate, a source and a drain matched with the heterojunction are manufactured, a third semiconductor is formed on the heterojunction, the third semiconductor in the non-gate region is thinned, the third semiconductor in the non-gate regionis then converted into a fourth semiconductor, the third semiconductor in the gate region is retained, and the fourth semiconductor is a high-resistance semiconductor. The manufacturing method is advantaged in that no secondary extension is required, etching the gate region of the device is further not required, uniformity, repeatability and introduction of damage caused in the etching process are avoided, partial etching is performed on an active region besides the gate region of the device, and damage is reduced.

An MOCVD epitaxy processing method of an AlInGaN quaternary alloy thin-film material belongs to the technical field of semi-conductors. The AlInGaN quaternary alloy thin-film material is formed by virtue of using a metal organic chemical vapor deposition (MOCVD) epitaxy technology and employing a method of alternatively matching and growing ternary alloy InGaN and AlGaN materials in a thickness of atomic level. The AlInGaN quaternary alloy thin-film material prepared by using the aforementioned technology can achieve the following parameter indexes: (1) the half-peak height and width of an X-ray diffraction (XRD) (002) symmetry plane < 240 seconds; (2) the material surface roughness < 1 nm; and (3) the c-face lattice constant mismatch degree with respect to GaN < 0.5%.