55 results about "Band bending" patented technology

The embodiment of the invention provides a composite substrate and a preparation method of the composite substrate, relates to the technical field of semiconductor devices, and is used for solving the technical problem of relatively high bonding interface resistance of a composite substrate formed by bonding a 3C-SiC substrate and a 4H-SiC substrate in related technologies. The composite substrate comprises a 3C-SiC layer and a 4H-SiC layer, the 4H-SiC layer comprises a first surface, and the 3C-SiC layer comprises a second surface; the first surface and / or the second surface comprises a high-concentration doped layer with N-type conductivity, and a bonding interface of the 3C-SiC layer and the 4H-SiC layer is a contact surface between the high-concentration doped layer and the second surface, between the high-concentration doped layer and the first surface or between the high-concentration doped layer and the two high-concentration doped layers. The interface energy band is adjusted through the energy band bending effect of the high-concentration doping layer, the barrier width and height of the bonding interface are reduced, electrons penetrate through the barrier through a tunneling mechanism, the migration efficiency of the electrons on the heterojunction interface is improved, and the interface resistance is reduced.

The invention discloses a preparation method and application of a La-doped modified BiVO4 piezoelectric photocatalyst, and belongs to the technical field of piezoelectric photocatalysts. According to the invention, by doping BiVO4 with La, the surface appearance of BiVO4 is changed, the unit cell parameter and grain size of BiVO4 are reduced, appropriate adsorption sites are provided for the piezoelectric electro-catalysis process, the light absorption capability is enhanced, the response sensitivity of the BiVO4 piezoelectric electro-catalyst to mechanical stress under the ultrasonic vibration piezoelectric effect is improved, and under the action of the mechanical stress, the response sensitivity of the BiVO4 piezoelectric electro-catalyst to the mechanical stress is improved. The La-doped modified BiVO4 piezoelectric photocatalyst can be used for inducing a BiVO4 surface energy band to bend and enhancing a piezoelectric effect, so that the La-doped modified BiVO4 piezoelectric photocatalyst capable of degrading pollutants under the combined action of piezoelectricity and light is obtained.

Various embodiments of the present application are directed towards a group III-V device including a rough buffer layer. The rough buffer layer overlies a silicon substrate, a buffer structure overlies the rough buffer layer, and a heterojunction structure overlies the buffer structure. The buffer structure causes band bending and formation of a two-dimensional hole gas (2DHG) in the rough buffer layer. The rough buffer layer includes silicon or some other suitable semiconductor material and, in some embodiments, is doped. A top surface of the rough buffer layer and / or a bottom surface of the rough buffer layer is / are rough to promote carrier scattering along the top and bottom surfaces. The carrier scattering reduces carrier mobility and increases resistance at the 2DHG. The increased resistance increases an overall resistance of the silicon substrate, which reduces substrate loses and increases a power added efficiency (PAE).

The invention discloses a cadmium telluride solar cell and a preparation method thereof. The cadmium telluride solar cell comprises a substrate, a TCO layer, a window layer, a cadmium telluride layer, an aluminum oxide passivation layer, a back contact layer and a back electrode layer which are arranged in sequence. The surface, rich in oxygen atoms, of the aluminum oxide passivation layer can effectively passivate dangling bonds and defect states on the surface of CdTe, so that the open-circuit voltage (Voc) and the fill factor (FF) of the cell are improved; the aluminum oxide passivation layer forms a high conduction band bottom barrier for electrons, so that the electrons can be effectively prevented from moving from CdTe to the back contact direction to improve Voc; and meanwhile, the interface state pinning effect can be reduced, so that better energy band bending can be formed.

This application relates to the field of terahertz emission, specifically providing a low-frequency terahertz emitting device and its fabrication and usage methods. The device includes an excitation material, which is a heterojunction formed by a perovskite layer and a high-resistivity silicon layer. It also includes a first metal layer disposed outside the perovskite layer and a second metal layer disposed outside the high-resistivity silicon layer. During fabrication, a perovskite solution is first spin-coated onto the high-resistivity silicon to form a perovskite layer, and finally, the metal layers are deposited by vapor deposition. During use, a femtosecond laser is incident from one side of the perovskite layer, and a voltage is applied between the first and second metal layers. The applied electric field of this application enhances the interfacial band bending and widens the depletion layer, while simultaneously forming a stable potential gradient in the thickness direction. This makes the transient current change smoother, increases the time constant, and reduces the rate of change of the transient current over time, thereby increasing the proportion of the low-frequency terahertz component and achieving enhanced low-frequency radiation.

The present application relates to the technical fields of electric heat tracing band detection, and specifically relates to a kind of electric heat tracing band bending performance detection device, including workbench, two bending tables are symmetrically arranged on slide rail, fixed part is arranged in the bending table, limit post is slidably connected on the bending table, the outer wall of the fixed part is fixedly connected with second sliding plate, the outer wall of the limit post is fixedly connected with first sliding plate, the fixed part is slidably connected with first sliding plate, two drive mechanisms are respectively arranged in the position of fixed part below bending table, moving mechanism is arranged between two slide rails, two drive mechanisms are respectively symmetrically arranged on moving mechanism.The present application can realize the effect of fixing and bending of different specifications of electric heat tracing band, and also can realize automatic and repeated bending of electric heat tracing band through drive mechanism, and the bending radius and angle of electric heat tracing band can be changed through moving mechanism, so as to realize the detection of electric heat tracing band under multiple angles.

Disclosed herein are an LED system having color adjustability in response to a change in drive current density and a method of operating the same. In one example, the system includes a patterned dielectric layer, a multiple quantum well (MQW) region, an electron blocking layer (EBL), and a p-type GaN layer. The EBL is deposited on the MQW region and is structured such that the injection of holes into the MQW region is plane-specific. Plane-specific hole injection results in target color emission associated with band bending levels. A p-type GaN layer is deposited over the EBL and doped into a hole source. For shorter wavelength emission, p-GaN is designed such that sufficient holes are supplied to the lower layer of the MQW region. This selective hole injection along the direction of each crystal plane, in combination with controlled indium concentration and sufficient hole supply in the MQW region, achieves smooth color adjustability.

The utility model discloses a bending side-pushing forming discharging structure which comprises a machine cabinet and a discharging port, a feeding baffle is connected to the front end of the machine cabinet, two sets of sliding rails are arranged in the machine cabinet and located on one side of the feeding baffle, a sliding base is connected to the sliding rails in a sliding mode, a first air cylinder is arranged in the machine cabinet, and a piston rod of the first air cylinder is connected with the sliding base through a fixing plate. A plurality of lifting rods are connected to the bottom of the lifting plate, the other ends of the lifting rods movably penetrate through the sliding seat, a toothed plate is connected to the lifting rods, a tooth roller is rotationally connected to the interior of the sliding seat through a bearing, and the toothed plate is meshed with the tooth roller; by means of the automatic assemblies such as the first air cylinder and the second air cylinder, automatic discharging after metal material strips are bent and formed is achieved, manual material receiving and discharging are not needed, compared with a traditional manual discharging mode, the discharging time is greatly shortened, and efficiency reduction caused by manual fatigue is avoided.

The invention discloses a GaN-based P-type ohmic contact structure based on a silicon nitride and magnesium nitride composite structure and a preparation method of the GaN-based P-type ohmic contact structure, and the ohmic contact structure is arranged on a P-type GaN layer and comprises a SiN / MgN composite structure. The SiN / MgN composite structure is formed by stacking SiN layers and MgN layers of 1 to 3 cycles; wherein the thickness of the SiN layer is 1-2 nm, and the thickness of the MgN layer is 2-4 nm; the Si doping concentration of the SiN layer is 1 * 10 < 17 >-6 * 10 < 17 > cm <-3 >, and the Mg doping concentration of the MgN layer is 5 * 10 < 19 >-3 * 10 < 21 > cm <-3 >. The preparation method provided by the invention comprises the step of growing the composite structure under the conditions of 750-900 DEG C and 200-500 Torr. The high work function of MgN, the energy band bending of the SiN / PGaN interface and the tunneling effect formed by Mg diffusion are utilized to synergistically reduce the P-type ohmic contact resistance, and the beneficial effects of reducing the voltage of the device and improving the brightness and the lighting effect are achieved.

According to the gallium nitride-based semiconductor laser with the gradually-changed hole mobility waveguide layer, a fitting curve of In ion strength distribution or In atom concentration distribution, a fitting curve of valence band effective state density distribution and a fitting curve of hole mobility distribution of an upper waveguide layer and a lower waveguide layer which are tested by SIMS all meet any function distribution of ExpGrow1, ExpGrow2, Lorentz and Bradley; energy band degeneracy is improved, ionization impurities, polarization charges and energy band bending restriction are reduced, coupling of a heavy hole band and a light hole band with an SO band is regulated and controlled, valence band effective state density is improved, population inversion and laser gain are enhanced, hole mobility distribution of a waveguide layer is controlled to be in splayed distribution, interface scattering and ionization impurity scattering are inhibited, and the performance of the laser is improved. The hole mobility and the thermal stability are improved, the hole transport efficiency is enhanced, the hole leakage is reduced, and the slope efficiency, the optical power, the aging life and the temperature quenching ratio of the laser are improved.

An LED system with color variability in response to variations in the drive current density is disclosed. In one example, the system comprises a structured dielectric layer, a multi-quantum-well (MQW) region, an electron-blocking layer (EBL), and a p-doped GaN layer. The EBL is deposited on the MQW region and is structured such that hole injection into the MQW region is plane-specific. Plane-specific hole injection leads to targeted color emission, which is tied to the bandbending level. The p-doped GaN layer is deposited above the EBL and is doped as a hole source. For shorter-wavelength emissions, the p-GaN is designed to provide sufficient hole supply to the lower layers of the MQW region.This selective injection of holes towards different crystal planes, together with a controlled indium concentration in the MQW region and a sufficient supply of holes, enables stepless color variation.

Disclosed herein is an LED system and method that emits within a red wavelength in response to a drive current density change. In one example, the system includes a patterned dielectric layer, a plurality of quantum well (MQW) regions, an electron blocking layer (EBL), and a p-type GaN layer. The EBL is deposited on the MQW region and is structured such that the injection of holes into the MQW region is plane-specific. Plane-specific hole injection results in target color emission associated with band bending levels. A p-type GaN layer is deposited over the EBL and doped into a hole source. For shorter wavelength emission, p-GaN is designed such that sufficient holes are supplied to the lower layer of the MQW region. This selective hole injection along the direction of each crystal plane, in combination with controlled indium concentration and sufficient hole supply in the MQW region, can achieve smooth color adjustability.

The invention provides a bundling device and bundling equipment, and belongs to the technical field of automatic bundling. The bundling device comprises a belt bending assembly, a first driving piece, a guide column and a reversing plate. The band bending assembly comprises a mounting plate, a band bending plate and a steering protruding block, the mounting plate is provided with a containing groove and an opening so as to contain part of the structure of the binding band, the band bending plate is rotationally connected with the mounting plate and used for bending the toothed band strip, and the steering protruding block and the band bending plate are relatively static. The first driving piece is configured to drive the belt bending assembly to move. The surface, abutting against the steering protruding block, of the guide column is a guide face, and the guide face can guide the steering protruding block to rotate so that the belt bending plate can rotate to bend the toothed belt strip. The reversing plate is provided with a reversing groove, the reversing groove is provided with an inlet and an outlet which are in the same direction, and the bent toothed belt strip can face the inlet so that the bent toothed belt strip can be reversed in the reversing groove, penetrate out of the outlet and penetrate through the binding opening, and the binding belt can bind a to-be-bound piece arranged on the reversing plate. According to the bundling device, the bundling efficiency of the ribbon can be improved.

The present invention belongs to the field of organic semiconductor technology, and specifically provides a multiplication-type organic photodetector based on high-temperature induced interface traps, which is used to solve the problems of low response speed, high operating voltage and complex process of existing multiplication-type organic photodetectors. The present invention comprises: a substrate, a transparent conductive cathode, a cathode modification layer, a photosensitive layer, an anode modification layer and an anode layer stacked in sequence from bottom to top; wherein the photosensitive layer is subjected to high-temperature thermal annealing treatment, so that a granular defect morphology is formed on its upper surface as an interface trap, so that photogenerated carriers are trapped and accumulated at the interface, thereby inducing interface energy band bending and tunneling injection of external circuit charges, generating a photomultiplier effect, and thus significantly improving the external quantum efficiency of the device and enhancing the detection performance of the detector; and the defect state morphology can be finely controlled by the thermal annealing temperature, annealing time and thickness of the photosensitive layer; in addition, the preparation process of the present invention is simple, the cost is low, and it is easy to realize industrial production.

The invention discloses a high passivation method of a crystalline silicon bottom cell, the crystalline silicon bottom cell and a laminated solar cell thereof. The high passivation method comprises the following steps: providing a crystalline silicon substrate; carrying out thermal oxidation by adopting LPCVD (Low Pressure Chemical Vapor Deposition), and preparing a tunneling silicon oxide layer on the crystalline silicon substrate; sequentially carrying out first intrinsic silicon layer deposition, phosphorus-rich layer or boron-rich layer deposition and second intrinsic silicon layer deposition on the tunneling silicon oxide layer; performing high-temperature annealing diffusion in a nitrogen environment in high-temperature diffusion equipment to obtain a polycrystalline silicon layer with high doping concentration; the surface is properly oxidized through post-thermal oxidation, and a phosphorosilicate glass layer or a borosilicate glass layer is formed on the polycrystalline silicon layer. According to the method, the doping concentration of doped atoms in the polycrystalline silicon layer is effectively improved, the energy band bending degree between the crystalline silicon substrate and the polycrystalline silicon layer is enhanced, the field effect passivation strength and the passivation level of the crystalline silicon bottom battery are further improved, and finally the open-circuit voltage of the crystalline silicon bottom battery and the contribution to the open-circuit voltage of the laminated battery are improved.

The application belongs to the field of nanomaterial piezoelectric photocatalysis, and relates to a preparation method of a defect state tungsten oxide coated bismuth ferrite nanomaterial (WO 3‑x / BiFeO3) and application of the nanomaterial in the field of piezoelectric photocatalysis. WO 3‑x / BiFeO3 is synthesized by a hydrothermal method, WO 3‑x The application has excellent light absorption capacity in the visible to near infrared region, and enhances effective utilization of sunlight by the composite material. BiFeO3 can form a piezoelectric field under ultrasonic action, provides driving force for photo-induced charges, suppresses photo-induced electron-hole recombination, and can bend a band and narrow a band gap, which is helpful to piezoelectric photocatalytic decomposition of organic pollutants and decomposition of water to produce hydrogen. The piezoelectric photocatalytic degradation efficiency of methylene blue by WO 3‑x / BiFeO3 is 3.29 times that of BiFeO3, the piezoelectric photocatalytic hydrogen production amount is 4.86 times that of BiFeO3, and the piezoelectric photocatalytic performance is significantly improved. The application describes a preparation method of a defect state tungsten oxide coated bismuth ferrite nanomaterial and application of the nanomaterial in piezoelectric photocatalytic degradation of organic pollutants and decomposition of water to produce hydrogen, and the preparation process flow is simple and has wide application prospect.

Various embodiments of the present application are directed towards a group III-V device including a rough buffer layer. The rough buffer layer overlies a silicon substrate, a buffer structure overlies the rough buffer layer, and a heterojunction structure overlies the buffer structure. The buffer structure causes band bending and formation of a two-dimensional hole gas (2DHG) in the rough buffer layer. The rough buffer layer includes silicon or some other suitable semiconductor material and, in some embodiments, is doped. A top surface of the rough buffer layer and / or a bottom surface of the rough buffer layer is / are rough to promote carrier scattering along the top and bottom surfaces. The carrier scattering reduces carrier mobility and increases resistance at the 2DHG. The increased resistance increases an overall resistance of the silicon substrate, which reduces substrate loses and increases a power added efficiency (PAE).

According to the precise terminal material strip bending forming system, a female die is arranged on a lower die plate of a terminal material strip cutting die, and a terminal material strip of a coil changing head with a rated step length and a terminal material strip of a bending die tail are correspondingly cut into a terminal material strip head and a terminal material strip tail through a left cutting positioning needle set and a right cutting positioning needle set which are arranged on the female die; a copper welding block between a left bakelite fixing block and a right bakelite fixing block of the terminal material strip welding mechanism is provided with a left welding positioning pin group and a right welding positioning pin group, and the distance between the left welding positioning pin group and the right welding positioning pin group is equal to the distance between the left cutting positioning pin group and the right cutting positioning pin group. The left cover plate and the right cover plate are correspondingly arranged on the terminal material belt at the reel changing head and the terminal material belt at the tail of the bending die in a covering manner respectively and are correspondingly arranged above the left bakelite fixing block and the right bakelite fixing block; and the head part of the welding terminal material belt and the tail part of the welding terminal material belt are formed by stamping a whole material belt from the bending forming die. According to the system, the loss ratio of the head and tail materials of each roll of terminal material belt is reduced, and the terminal material belt can be prevented from being deformed, so that the bending process is ensured to be smoothly carried out.

The invention discloses a method for constructing a Van der Waals heterojunction by using a reverse energy band bending strategy, and belongs to the field of two-dimensional material photoelectric devices. According to the Van der Waals heterojunction constructed by using the reverse energy band bending strategy, Bi2O2Se is used as an n-type semiconductor material, In2Se3 is used as a p-type semiconductor material, and the Van der Waals heterojunction with II-type energy band arrangement is formed. The energy band structures of Bi2O2Se and In2Se3 are regulated and controlled by constructing the Van der Waals heterojunction, and the conduction band bottom and the valence band top of the Bi2O2Se and In2Se3 are respectively positioned in different materials, so that II-type energy band arrangement is formed, reverse energy band bending occurs, the carrier recombination probability is reduced, the charge separation efficiency is remarkably improved, the dark current is reduced, and the light absorption efficiency is enhanced. The photoelectric detector made of the Van der Waals heterojunction constructed by the invention has the characteristics of high detection rate and wide band.

To provide an LED system having color adjustability in response to changes in drive current density.SOLUTION: In one example, the system includes a patterned dielectric layer, a multiple quantum well (MQW) region, an electron blocking layer (EBL), and a p-type GaN layer. The EBL is deposited on the MQW region and is structured such that injection of holes into the MQW region is planar specific. The planar intrinsic hole injection leads to a target color emission associated with the level of band bending. A p-type GaN layer is deposited over the EBL and is doped to be a source of holes. For shorter wavelength emission, the p-GaN is engineered to provide sufficient holes to the underlying layers of the MQW region. This selective hole injection in the direction of the various crystal planes, together with a managed indium concentration in the MQW region and a sufficient supply of holes, enables smooth color tunability.SELECTED DRAWING: Figure 1A

The invention provides a photovoltaic-multiplication dual-mode photoelectric detector based on adjustable bias polarity and a preparation method thereof, the photovoltaic-multiplication dual-mode photoelectric detector adopts a multi-layer structure design, and specifically comprises a transparent substrate, a first conductive electrode layer, an electron transport layer, a photosensitive active layer, a hole transport layer and a second conductive electrode layer from bottom to top in sequence; the photosensitive active layer is a heterojunction formed by an organic polymer donor and a fullerene acceptor. Under forward bias voltage, the electron trap captures photo-induced electrons and triggers energy band bending, so that holes can be tunneled and injected from an external circuit, and a high-gain photomultiplication type detection mode is realized; under reverse bias voltage, photo-generated holes and electrons in the heterojunction are respectively collected by the hole transport layer and the electron transport layer, and a photovoltaic detection mode is realized. Through the cooperative detection capability of the double working modes, the detector has the advantages of a photovoltaic mechanism and a multiplication mechanism, has tunable dark current and photoelectric gain, and can ensure the flexible detection of the photoelectric detector on strong light or weak light.

The invention discloses an electric tracing band bending performance test device, which belongs to the technical field of electric tracing band detection, and comprises a winding part, a fixing piece, a machine table, a clamping structure and a locking mechanism. A first winding fixed shaft and a second winding fixed shaft are arranged on the machine table, the winding fixed shaft comprises a plurality of different-diameter shaft sections, the adjacent different-diameter shaft sections are connected through variable-diameter cone sections, bypasses are formed in the surface of the winding fixed shaft, and the distance between the bypasses formed in the surfaces of the variable-diameter cone sections gradually changes in the axial direction of the winding fixed shaft. According to the invention, dynamic winding and covering of the electric tracing band are realized through the plurality of winding and fixing shafts, the plurality of reducing shaft sections and the reducing cone sections between the adjacent reducing shaft sections in cooperation with the bypasses of which the surface spacing distribution is different or the spacing is gradually changed. And the variable-diameter cone section around the fixed shaft is matched with the detour distribution with gradually-changed spacing, so that the bending radius and the final bending angle of the electric tracing band can be steplessly adjusted.

The present invention discloses a method for improving the photoelectric conversion efficiency of GaAs thin-film solar cells. Taking the window layer as the active layer of the solar cell, fixed charges are introduced into the antireflection structure, induced charges appear on the outer surface of the window layer, energy band bending occurs near the surface, and minority carriers are hindered from flowing to the surface for recombination. On the one hand, this structure increases the absorption efficiency of short-wave photons, and on the other hand, it reduces the surface recombination of minority carriers, thereby improving the collection efficiency of minority carriers, short-circuit current and conversion efficiency.

The invention relates to the technical field of electric tracing band detection, in particular to an electric tracing band bending performance detection device which comprises a working table, two bending tables are symmetrically arranged on a sliding rail, fixing pieces are arranged in the bending tables, limiting columns are slidably connected to the bending tables, a second sliding plate is fixedly connected to the outer wall of each fixing piece, and the second sliding plate is fixedly connected to the outer wall of each fixing piece. A first sliding plate is fixedly connected to the outer wall of the limiting column, the fixing piece is slidably connected with the first sliding plate, the two driving mechanisms are arranged at the positions, corresponding to the fixing piece, below the bending table, the moving mechanism is arranged between the two sliding rails, and the two driving mechanisms are symmetrically arranged on the moving mechanism. According to the bending device, the effect of fixedly bending the electric heating plate strips of different specifications can be achieved, the electric tracing band can be automatically and repeatedly bent for multiple times through the driving mechanism, and meanwhile the bending radius and angle of the electric tracing band are changed through the moving mechanism; therefore, the detection of the electric tracing band at multiple angles is realized.

The invention relates to the field of semiconductors, and discloses an epitaxial structure and a deep ultraviolet photoelectric device based on an AlInN hole injection tunnel junction layer, and the epitaxial structure comprises a substrate, and a buffer layer, a superlattice layer, an n-type semiconductor layer, a multi-quantum well layer and a tunnel junction layer which are located on the upper surface of the substrate and are sequentially stacked in the direction away from the substrate, the tunnel junction layer comprises a heavily doped p-type AlInN hole injection layer, an intrinsic polarization AlGaN layer and a heavily doped n-type AlInN layer. The layer material of the hole injection layer is AlInN, under the same forbidden bandwidth, the AlInN material has larger lattice constant, intrinsic polarization and piezoelectric polarization than the AlGaN material, polarization surface charges with higher density can be generated at the interface of the AlInN material and the intrinsic polarization AlGaN layer, the electric field intensity of a tunnel junction space charge region is increased, the energy band bending of the tunnel junction space charge region is enhanced, and the hole injection efficiency is improved. Carrier tunneling is promoted, and the electrical performance and the wall insertion efficiency of the epitaxial structure are improved.

The application discloses a pH-responsive bismuth-based nanodrug and a preparation method and pharmaceutical application thereof. The nanodrug is hyaluronic acid modified cuprous oxide / iodine bismuth oxide heterojunction nanoparticles (Cu2O@BiOI-HA), the cuprous oxide has a double-layer hollow mesoporous structure, the iodine bismuth oxide is loaded on the surface of the cuprous oxide in a nanolayer to form a heterojunction, the particle size is 200-700 nm, and the band gap is 1.46-1.49 eV. The nanodrug produces active oxygen by promoting the separation of electron-hole pairs through band bending under the excitation of ultrasound, releases Cu + ions under acidic conditions, generates hydroxyl radicals by means of a Fenton-like reaction, realizes the synergistic treatment of sonodynamic and chemical dynamics, and simultaneously, the Cu + ions induce copper death, the active oxygen activates the pyroptosis pathway, the multimodal cell death synergistically triggers immunogenic cell death, and the anti-tumor immune response is activated. The application establishes a structure-activity relationship between synthesis parameters and sonodynamic performance, and has application value in the treatment of breast cancer.

To provide an LED system having color adjustability in response to changes in drive current density.SOLUTION: In one example, the system includes a patterned dielectric layer, a multiple quantum well (MQW) region, an electron blocking layer (EBL), and a p-type GaN layer. The EBL is deposited on the MQW region and is structured such that injection of holes into the MQW region is planar specific. The planar intrinsic hole injection leads to a target color emission associated with the level of band bending. A p-type GaN layer is deposited over the EBL and is doped to be a source of holes. For shorter wavelength emission, the p-GaN is engineered to provide sufficient holes to the underlying layers of the MQW region. This selective hole injection in the direction of the various crystal planes, together with a managed indium concentration in the MQW region and a sufficient supply of holes, enables smooth color tunability.SELECTED DRAWING: Figure 1A

The present disclosure relates to a membrane-electrode assembly for a water electrolysis cell and a water electrolysis cell comprising same, wherein the membrane-electrode assembly for a water electrolysis cell further comprises a coating layer positioned on one surface of a catalyst layer to prevent an ion conductor exposed on the surface of the catalyst layer from contacting a microporous layer, and a polymer electrolyte membrane exposed through an opening in which the catalyst layer does not exist due to low loading from contacting the microporous layer, thereby reducing a band bending phenomenon, so that a pinch-off effect can be reduced and performance can be improved. In addition, furthermore, the coating layer serves to connect catalyst layers, which are not in contact with the microporous layer, to each other, thereby enabling smooth electron movement.

The present invention provides a semiconductor laser device provided with a Frenkel defect layer, which relates to the technical field of semiconductor optoelectronic devices. It sequentially includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer from bottom to top. A Frenkel defect layer is provided above the upper confinement layer; the Frenkel defect layer is above the upper confinement layer, and the Frenkel defect layer is above the upper confinement layer, inducing the generation of chemical bonding interfaces and second-phase coherent interfaces, adjusting the interfacial energy band bending, overpotential, and interfacial phonon scattering, generating interfacial charge transfer, efficiently desorbing hydrogen atoms, forming H2 to discharge from the surface, enhancing the ionization rate of the p-type doping element in the upper confinement layer and reducing the acceptor activation energy of the doping element, enhancing the hole concentration in the upper confinement layer, enhancing the efficiency and transport efficiency of hole injection into the active layer, and enhancing the peak gain and slope efficiency of the laser device.

An LED system having color tunability in response to variations in driving current density is disclosed. In one example, the system includes a patterned dielectric layer, multiple quantum well (MQW) region, electron blocking layer (EBL), and p-type GaN layer. The EBL is deposited on the MQW region and structured such that the injection of holes into the MQW region is plane-specific. Plane-specific hole injection leads to targeted color emission tied to the level of band bending. The p-type GaN layer is deposited above the EBL and is doped to be a source of holes. For shorter wavelength emission, the p-GaN is designed such that there is adequate hole supply to lower layers of the MQW region. This selective injection of holes in the direction of various crystal planes, together with managed Indium concentration in the MQW region and an adequate supply of holes, enables smooth color tunability.