31 results about "Band bending" patented technology

The embodiment of the invention provides a composite substrate and a preparation method of the composite substrate, relates to the technical field of semiconductor devices, and is used for solving the technical problem of relatively high bonding interface resistance of a composite substrate formed by bonding a 3C-SiC substrate and a 4H-SiC substrate in related technologies. The composite substrate comprises a 3C-SiC layer and a 4H-SiC layer, the 4H-SiC layer comprises a first surface, and the 3C-SiC layer comprises a second surface; the first surface and / or the second surface comprises a high-concentration doped layer with N-type conductivity, and a bonding interface of the 3C-SiC layer and the 4H-SiC layer is a contact surface between the high-concentration doped layer and the second surface, between the high-concentration doped layer and the first surface or between the high-concentration doped layer and the two high-concentration doped layers. The interface energy band is adjusted through the energy band bending effect of the high-concentration doping layer, the barrier width and height of the bonding interface are reduced, electrons penetrate through the barrier through a tunneling mechanism, the migration efficiency of the electrons on the heterojunction interface is improved, and the interface resistance is reduced.

The invention discloses a cadmium telluride solar cell and a preparation method thereof. The cadmium telluride solar cell comprises a substrate, a TCO layer, a window layer, a cadmium telluride layer, an aluminum oxide passivation layer, a back contact layer and a back electrode layer which are arranged in sequence. The surface, rich in oxygen atoms, of the aluminum oxide passivation layer can effectively passivate dangling bonds and defect states on the surface of CdTe, so that the open-circuit voltage (Voc) and the fill factor (FF) of the cell are improved; the aluminum oxide passivation layer forms a high conduction band bottom barrier for electrons, so that the electrons can be effectively prevented from moving from CdTe to the back contact direction to improve Voc; and meanwhile, the interface state pinning effect can be reduced, so that better energy band bending can be formed.

This application relates to the field of terahertz emission, specifically providing a low-frequency terahertz emitting device and its fabrication and usage methods. The device includes an excitation material, which is a heterojunction formed by a perovskite layer and a high-resistivity silicon layer. It also includes a first metal layer disposed outside the perovskite layer and a second metal layer disposed outside the high-resistivity silicon layer. During fabrication, a perovskite solution is first spin-coated onto the high-resistivity silicon to form a perovskite layer, and finally, the metal layers are deposited by vapor deposition. During use, a femtosecond laser is incident from one side of the perovskite layer, and a voltage is applied between the first and second metal layers. The applied electric field of this application enhances the interfacial band bending and widens the depletion layer, while simultaneously forming a stable potential gradient in the thickness direction. This makes the transient current change smoother, increases the time constant, and reduces the rate of change of the transient current over time, thereby increasing the proportion of the low-frequency terahertz component and achieving enhanced low-frequency radiation.

Disclosed herein are an LED system having color adjustability in response to a change in drive current density and a method of operating the same. In one example, the system includes a patterned dielectric layer, a multiple quantum well (MQW) region, an electron blocking layer (EBL), and a p-type GaN layer. The EBL is deposited on the MQW region and is structured such that the injection of holes into the MQW region is plane-specific. Plane-specific hole injection results in target color emission associated with band bending levels. A p-type GaN layer is deposited over the EBL and doped into a hole source. For shorter wavelength emission, p-GaN is designed such that sufficient holes are supplied to the lower layer of the MQW region. This selective hole injection along the direction of each crystal plane, in combination with controlled indium concentration and sufficient hole supply in the MQW region, achieves smooth color adjustability.

The utility model discloses a bending side-pushing forming discharging structure which comprises a machine cabinet and a discharging port, a feeding baffle is connected to the front end of the machine cabinet, two sets of sliding rails are arranged in the machine cabinet and located on one side of the feeding baffle, a sliding base is connected to the sliding rails in a sliding mode, a first air cylinder is arranged in the machine cabinet, and a piston rod of the first air cylinder is connected with the sliding base through a fixing plate. A plurality of lifting rods are connected to the bottom of the lifting plate, the other ends of the lifting rods movably penetrate through the sliding seat, a toothed plate is connected to the lifting rods, a tooth roller is rotationally connected to the interior of the sliding seat through a bearing, and the toothed plate is meshed with the tooth roller; by means of the automatic assemblies such as the first air cylinder and the second air cylinder, automatic discharging after metal material strips are bent and formed is achieved, manual material receiving and discharging are not needed, compared with a traditional manual discharging mode, the discharging time is greatly shortened, and efficiency reduction caused by manual fatigue is avoided.

The invention discloses a GaN-based P-type ohmic contact structure based on a silicon nitride and magnesium nitride composite structure and a preparation method of the GaN-based P-type ohmic contact structure, and the ohmic contact structure is arranged on a P-type GaN layer and comprises a SiN / MgN composite structure. The SiN / MgN composite structure is formed by stacking SiN layers and MgN layers of 1 to 3 cycles; wherein the thickness of the SiN layer is 1-2 nm, and the thickness of the MgN layer is 2-4 nm; the Si doping concentration of the SiN layer is 1 * 10 < 17 >-6 * 10 < 17 > cm <-3 >, and the Mg doping concentration of the MgN layer is 5 * 10 < 19 >-3 * 10 < 21 > cm <-3 >. The preparation method provided by the invention comprises the step of growing the composite structure under the conditions of 750-900 DEG C and 200-500 Torr. The high work function of MgN, the energy band bending of the SiN / PGaN interface and the tunneling effect formed by Mg diffusion are utilized to synergistically reduce the P-type ohmic contact resistance, and the beneficial effects of reducing the voltage of the device and improving the brightness and the lighting effect are achieved.

According to the gallium nitride-based semiconductor laser with the gradually-changed hole mobility waveguide layer, a fitting curve of In ion strength distribution or In atom concentration distribution, a fitting curve of valence band effective state density distribution and a fitting curve of hole mobility distribution of an upper waveguide layer and a lower waveguide layer which are tested by SIMS all meet any function distribution of ExpGrow1, ExpGrow2, Lorentz and Bradley; energy band degeneracy is improved, ionization impurities, polarization charges and energy band bending restriction are reduced, coupling of a heavy hole band and a light hole band with an SO band is regulated and controlled, valence band effective state density is improved, population inversion and laser gain are enhanced, hole mobility distribution of a waveguide layer is controlled to be in splayed distribution, interface scattering and ionization impurity scattering are inhibited, and the performance of the laser is improved. The hole mobility and the thermal stability are improved, the hole transport efficiency is enhanced, the hole leakage is reduced, and the slope efficiency, the optical power, the aging life and the temperature quenching ratio of the laser are improved.

An LED system with color variability in response to variations in the drive current density is disclosed. In one example, the system comprises a structured dielectric layer, a multi-quantum-well (MQW) region, an electron-blocking layer (EBL), and a p-doped GaN layer. The EBL is deposited on the MQW region and is structured such that hole injection into the MQW region is plane-specific. Plane-specific hole injection leads to targeted color emission, which is tied to the bandbending level. The p-doped GaN layer is deposited above the EBL and is doped as a hole source. For shorter-wavelength emissions, the p-GaN is designed to provide sufficient hole supply to the lower layers of the MQW region.This selective injection of holes towards different crystal planes, together with a controlled indium concentration in the MQW region and a sufficient supply of holes, enables stepless color variation.

Disclosed herein is an LED system and method that emits within a red wavelength in response to a drive current density change. In one example, the system includes a patterned dielectric layer, a plurality of quantum well (MQW) regions, an electron blocking layer (EBL), and a p-type GaN layer. The EBL is deposited on the MQW region and is structured such that the injection of holes into the MQW region is plane-specific. Plane-specific hole injection results in target color emission associated with band bending levels. A p-type GaN layer is deposited over the EBL and doped into a hole source. For shorter wavelength emission, p-GaN is designed such that sufficient holes are supplied to the lower layer of the MQW region. This selective hole injection along the direction of each crystal plane, in combination with controlled indium concentration and sufficient hole supply in the MQW region, can achieve smooth color adjustability.

According to the precise terminal material strip bending forming system, a female die is arranged on a lower die plate of a terminal material strip cutting die, and a terminal material strip of a coil changing head with a rated step length and a terminal material strip of a bending die tail are correspondingly cut into a terminal material strip head and a terminal material strip tail through a left cutting positioning needle set and a right cutting positioning needle set which are arranged on the female die; a copper welding block between a left bakelite fixing block and a right bakelite fixing block of the terminal material strip welding mechanism is provided with a left welding positioning pin group and a right welding positioning pin group, and the distance between the left welding positioning pin group and the right welding positioning pin group is equal to the distance between the left cutting positioning pin group and the right cutting positioning pin group. The left cover plate and the right cover plate are correspondingly arranged on the terminal material belt at the reel changing head and the terminal material belt at the tail of the bending die in a covering manner respectively and are correspondingly arranged above the left bakelite fixing block and the right bakelite fixing block; and the head part of the welding terminal material belt and the tail part of the welding terminal material belt are formed by stamping a whole material belt from the bending forming die. According to the system, the loss ratio of the head and tail materials of each roll of terminal material belt is reduced, and the terminal material belt can be prevented from being deformed, so that the bending process is ensured to be smoothly carried out.

To provide an LED system having color adjustability in response to changes in drive current density.SOLUTION: In one example, the system includes a patterned dielectric layer, a multiple quantum well (MQW) region, an electron blocking layer (EBL), and a p-type GaN layer. The EBL is deposited on the MQW region and is structured such that injection of holes into the MQW region is planar specific. The planar intrinsic hole injection leads to a target color emission associated with the level of band bending. A p-type GaN layer is deposited over the EBL and is doped to be a source of holes. For shorter wavelength emission, the p-GaN is engineered to provide sufficient holes to the underlying layers of the MQW region. This selective hole injection in the direction of the various crystal planes, together with a managed indium concentration in the MQW region and a sufficient supply of holes, enables smooth color tunability.SELECTED DRAWING: Figure 1A

The invention discloses an electric tracing band bending performance test device, which belongs to the technical field of electric tracing band detection, and comprises a winding part, a fixing piece, a machine table, a clamping structure and a locking mechanism. A first winding fixed shaft and a second winding fixed shaft are arranged on the machine table, the winding fixed shaft comprises a plurality of different-diameter shaft sections, the adjacent different-diameter shaft sections are connected through variable-diameter cone sections, bypasses are formed in the surface of the winding fixed shaft, and the distance between the bypasses formed in the surfaces of the variable-diameter cone sections gradually changes in the axial direction of the winding fixed shaft. According to the invention, dynamic winding and covering of the electric tracing band are realized through the plurality of winding and fixing shafts, the plurality of reducing shaft sections and the reducing cone sections between the adjacent reducing shaft sections in cooperation with the bypasses of which the surface spacing distribution is different or the spacing is gradually changed. And the variable-diameter cone section around the fixed shaft is matched with the detour distribution with gradually-changed spacing, so that the bending radius and the final bending angle of the electric tracing band can be steplessly adjusted.

The invention relates to the field of semiconductors, and discloses an epitaxial structure and a deep ultraviolet photoelectric device based on an AlInN hole injection tunnel junction layer, and the epitaxial structure comprises a substrate, and a buffer layer, a superlattice layer, an n-type semiconductor layer, a multi-quantum well layer and a tunnel junction layer which are located on the upper surface of the substrate and are sequentially stacked in the direction away from the substrate, the tunnel junction layer comprises a heavily doped p-type AlInN hole injection layer, an intrinsic polarization AlGaN layer and a heavily doped n-type AlInN layer. The layer material of the hole injection layer is AlInN, under the same forbidden bandwidth, the AlInN material has larger lattice constant, intrinsic polarization and piezoelectric polarization than the AlGaN material, polarization surface charges with higher density can be generated at the interface of the AlInN material and the intrinsic polarization AlGaN layer, the electric field intensity of a tunnel junction space charge region is increased, the energy band bending of the tunnel junction space charge region is enhanced, and the hole injection efficiency is improved. Carrier tunneling is promoted, and the electrical performance and the wall insertion efficiency of the epitaxial structure are improved.

The application discloses a pH-responsive bismuth-based nanodrug and a preparation method and pharmaceutical application thereof. The nanodrug is hyaluronic acid modified cuprous oxide / iodine bismuth oxide heterojunction nanoparticles (Cu2O@BiOI-HA), the cuprous oxide has a double-layer hollow mesoporous structure, the iodine bismuth oxide is loaded on the surface of the cuprous oxide in a nanolayer to form a heterojunction, the particle size is 200-700 nm, and the band gap is 1.46-1.49 eV. The nanodrug produces active oxygen by promoting the separation of electron-hole pairs through band bending under the excitation of ultrasound, releases Cu + ions under acidic conditions, generates hydroxyl radicals by means of a Fenton-like reaction, realizes the synergistic treatment of sonodynamic and chemical dynamics, and simultaneously, the Cu + ions induce copper death, the active oxygen activates the pyroptosis pathway, the multimodal cell death synergistically triggers immunogenic cell death, and the anti-tumor immune response is activated. The application establishes a structure-activity relationship between synthesis parameters and sonodynamic performance, and has application value in the treatment of breast cancer.

To provide an LED system having color adjustability in response to changes in drive current density.SOLUTION: In one example, the system includes a patterned dielectric layer, a multiple quantum well (MQW) region, an electron blocking layer (EBL), and a p-type GaN layer. The EBL is deposited on the MQW region and is structured such that injection of holes into the MQW region is planar specific. The planar intrinsic hole injection leads to a target color emission associated with the level of band bending. A p-type GaN layer is deposited over the EBL and is doped to be a source of holes. For shorter wavelength emission, the p-GaN is engineered to provide sufficient holes to the underlying layers of the MQW region. This selective hole injection in the direction of the various crystal planes, together with a managed indium concentration in the MQW region and a sufficient supply of holes, enables smooth color tunability.SELECTED DRAWING: Figure 1A

An LED system having color tunability in response to variations in driving current density is disclosed. In one example, the system includes a patterned dielectric layer, multiple quantum well (MQW) region, electron blocking layer (EBL), and p-type GaN layer. The EBL is deposited on the MQW region and structured such that the injection of holes into the MQW region is plane-specific. Plane-specific hole injection leads to targeted color emission tied to the level of band bending. The p-type GaN layer is deposited above the EBL and is doped to be a source of holes. For shorter wavelength emission, the p-GaN is designed such that there is adequate hole supply to lower layers of the MQW region. This selective injection of holes in the direction of various crystal planes, together with managed Indium concentration in the MQW region and an adequate supply of holes, enables smooth color tunability.

The application belongs to the method for improving the photoelectric conversion efficiency and stability of a device, and particularly relates to a method for reducing the defect density and surface potential of an organic-inorganic hybrid perovskite film by using a N-heterocyclic ring passivation agent through π-Pb 2+ The application relates to a method for reducing defect density and surface potential of an organic-inorganic hybrid perovskite film and enabling band bending of a perovskite material and improving charge extraction efficiency. An additive is added in a reverse solvent during preparation of an organic-inorganic hybrid perovskite film, and is attached and gathered on the surface of the formed organic-inorganic hybrid perovskite film. The application effectively passivates defects of the perovskite film by introducing a N-heterocyclic ring organic small molecule into the perovskite film, and improves the stability of the film and a corresponding device. The material used is low in cost and easy to realize in a process.

The application provides a porous bismuth vanadate nanorod loaded sheet-shaped cobalt-doped graphite phase carbon nitride photoanode catalyst, a preparation method thereof and application thereof in the field of photoelectrocatalytic water splitting to produce hydrogen. A spin-coating and annealing process is used to tightly load Co:g-C3N4 nanosheets on the surface of porous BiVO4 nanorods, and the energy band structure of the Co:g-C3N4 nanosheet is regulated by adjusting the doping ratio of Co, and then a Co:g-C3N4 / BiVO4 heterojunction photoanode with good energy band matching is constructed. Among them, the ultrathin sheet-shaped Co:g-C3N4 has a more negative conduction band potential and a wider light absorption range than BiVO4, which is conducive to expanding the light response interval; and the energy band bending on the BiVO4 side helps to promote the directional transmission of photo-generated electrons to the photocathode. Based on the synergistic effect of the two materials, the heterojunction structure can shorten the carrier transmission path, promote the effective separation of photo-generated electron-hole pairs, and thus improve the photoelectrocatalytic water splitting to produce hydrogen performance. In addition, the preparation process is simple and clear in operation, and has potential for large-scale application.

This invention relates to the field of semiconductor laser technology, specifically to an epitaxial structure of a GaN-based blue laser and its fabrication method. The structure includes a substrate on which an N-type GaN layer, an N-type lower confinement layer, an N-type lower waveguide layer, an active region, an upper waveguide layer, a U-type capping layer, a P-type electron blocking layer, a P-type upper confinement layer, and a P-type contact layer are sequentially stacked. The P-type electron blocking layer comprises a sequentially stacked AlN sublayer and a P-type InAlGaN sublayer. The P-type electron blocking layer of this invention utilizes the piezoelectric polarization and spontaneous polarization of the P-type InAlGaN sublayer to induce a large band bend at the heterojunction, placing the P-type dopant acceptor energy level below the Fermi level, thereby increasing the ionization rate of the P-type dopant acceptor at the cross-section and thus increasing the hole concentration. Furthermore, the use of a high-Al composition AlN sublayer near the active region can raise the energy band, confine electron overflow in the active region, and reduce non-radiative recombination of electrons and holes in the non-recombination region, thereby improving the luminous efficiency of the device.

The invention provides a gradient-doped electron transport layer, a preparation method thereof and a perovskite cell, and belongs to the technical field of solar cells, and the preparation method comprises the following steps: dispersing a tin salt in a solvent to obtain an undoped electron transport layer solution; dispersing tin salt and a doping agent in a solvent to obtain a doped electron transport layer solution; the dopant comprises at least one of antimony salt, aluminum salt, zinc salt and niobium salt; and sequentially spraying the undoped electron transport layer solution and the doped electron transport layer solution on the surface of a conductive substrate, annealing at 90-110 DEG C for 5-30 minutes, and then annealing at 150-200 DEG C for 5-30 minutes to obtain the gradient doped electron transport layer. According to the invention, energy band bending of the electronic layer can be realized, energy band matching between the electronic layer and perovskite can be optimized and adjusted, extraction and transmission of carriers at an interface can be promoted, non-radiative recombination of photon-generated carriers can be inhibited, and the problem of perovskite degradation caused by local overheating of the interface due to recombination of the photon-generated carriers can be avoided.

The invention relates to the technical field of material mechanical property testing, in particular to a broadband bending modulus testing device and method based on piezoelectric stack driving, and the device comprises a force excitation unit, a mechanical calibration elastic element, a displacement measurement unit, a to-be-tested object clamping unit and a high-speed imaging module; the broadband bending modulus testing device based on piezoelectric stack driving solves the problems that the existing mechanical testing technology mainly focuses on static or low-frequency conditions, such as nanoindentation and AFM methods, cannot effectively apply high-frequency transverse shear force, and cannot capture micron-sized high-speed bending deformation.

The embodiment of the application provides a composite substrate and a preparation method of the composite substrate, relates to the technical field of semiconductor devices, and is used for solving the technical problem of a large bonding interface resistance of a composite substrate formed by bonding a 3C-SiC substrate and a 4H-SiC substrate in the related art; the composite substrate comprises a 3C-SiC layer and a 4H-SiC layer, the 4H-SiC layer comprises a first surface, and the 3C-SiC layer comprises a second surface; the first surface and / or the second surface comprises a high-concentration doped layer with N-type conductivity, and a bonding interface of the 3C-SiC layer and the 4H-SiC layer is a contact surface of the high-concentration doped layer and the second surface, the high-concentration doped layer and the first surface or the two high-concentration doped layers. The band bending effect of the high-concentration doped layer is used to adjust the interface band, the width and height of the potential barrier of the bonding interface are reduced, electrons pass through the potential barrier through a tunneling mechanism, the migration efficiency of the electrons at the heterojunction interface is improved, and the interface resistance is reduced.

The disclosure provides a heterojunction solar cell and a manufacturing method thereof, and belongs to the technical field of solar cells. The heterojunction solar cell comprises an n-type monocrystalline silicon substrate, a first hydrogenated amorphous silicon thin film, a p-type doped hydrogenated nanosilicon thin film, a first TCO thin film and a first electrode located on one side of the n-type monocrystalline silicon substrate, and a second hydrogenated amorphous silicon thin film, an n-type doped hydrogenated nanosilicon thin film, a second TCO thin film and a second electrode located on the other side of the n-type monocrystalline silicon substrate; wherein the n-type doped hydrogenated nanosilicon thin film and the p-type doped hydrogenated nanosilicon thin film are nc-Si:H thin films with a band gap width of 1.8-2.2 eV. The disclosure optimizes the conventional amorphous silicon thin film of the active layer into an nc-Si:H thin film, which has a wide band gap and strong light absorption capacity. In addition, the internal crystallization of the nc-Si:H thin film is easy to realize high proportion doping, and the electric conductivity and Fermi level are high, which is beneficial to form a higher built-in electric field and energy band bending, reduce light loss and improve photoelectric conversion efficiency.

An LED system having color tunability in response to variations in driving current density is disclosed. In one example, the system includes a patterned dielectric layer, multiple quantum well (MQW) region, electron blocking layer (EBL), and p-type GaN layer. The EBL is deposited on the MQW region and structured such that the injection of holes into the MQW region is plane-specific. Plane-specific hole injection leads to targeted color emission tied to the level of band bending. The p-type GaN layer is deposited above the EBL and is doped to be a source of holes. For shorter wavelength emission, the p-GaN is designed such that there is adequate hole supply to lower layers of the MQW region. This selective injection of holes in the direction of various crystal planes, together with managed Indium concentration in the MQW region and an adequate supply of holes, enables smooth color tunability.

An LED system with color variability in response to variations in the drive current density is disclosed. In one example, the system comprises a structured dielectric layer, a multi-quantum-well (MQW) region, an electron-blocking layer (EBL), and a p-doped GaN layer. The EBL is deposited on the MQW region and is structured such that hole injection into the MQW region is plane-specific. Plane-specific hole injection leads to targeted color emission, which is tied to the bandbending level. The p-doped GaN layer is deposited above the EBL and is doped as a hole source. For shorter-wavelength emissions, the p-GaN is designed to provide sufficient hole supply to the lower layers of the MQW region.This selective injection of holes towards different crystal planes, together with a controlled indium concentration in the MQW region and a sufficient supply of holes, enables stepless color variation.

The application relates to the technical field of semiconductors, and discloses a ferroelectric tunnel junction and a preparation method. The ferroelectric tunnel junction comprises a ferroelectric functional layer and an interposed layer. The interposed layer is arranged on one side of the ferroelectric functional layer; wherein the material of the interposed layer is a two-dimensional material. The interposed layer made of the two-dimensional material is added on the basis of a traditional metal-ferroelectric layer-metal structure ferroelectric tunnel junction, the asymmetry of the interface charge before and after the polarization reversal is increased by arranging the interposed layer. The unique energy band structure of the two-dimensional material increases the asymmetry degree of the energy band bending caused by the different polarization directions of the ferroelectric, and the energy band position of the two-dimensional material is changed by the charge injection of the ferroelectric polarization reversal. By the two-dimensional material, the intermetallic gap state can be reduced, the contact resistance is reduced, the on-off ratio can be improved, the off-state current can be inhibited and the on-state current can be increased, the durability and the retention characteristics of the ferroelectric tunnel junction are improved, and the stability and the rectification ratio of the ferroelectric tunnel junction are improved.

1. Name of the product in this design: Fan housing (FN-22 transparent fan with bending). 2. Purpose of this design: For use as a housing for a portable fan. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1.

The utility model discloses a strap bending device which comprises a support and a tool used for fixing one end of a strap, a mould and a bending assembly are assembled on the support, the surface of the mould has a certain radian, the bending assembly is movably arranged on the support, the tool is located on the side of the mould, the bending assembly comprises a bending piece and a driving mechanism, and the driving mechanism is used for driving the bending piece to rotate. The bending piece is driven by the driving mechanism to move to be in contact with the straight strap and continuously move to apply pressure to press the strap on the cambered surface of the mould so as to form bending, the bending device is compact in structure and easy to operate, the straight strap is bent on the mould through movement of the bending rod, accurate bending can be achieved in a mechanical mode, and the bending efficiency is improved. According to the hose clamp bending device, the curvature of each hose clamp is ensured to be consistent, bending treatment is carried out on the hose clamps before edge rolling, and particularly, pre-bending treatment is carried out on the roots, not prone to edge rolling, of the combination parts of the hoop belts and the hoop shells, so that the roundness of the hoop belts in the edge rolling process can be ensured, and the efficiency and precision of the subsequent edge rolling procedure are remarkably improved.

The invention discloses an image sensor and a forming method thereof. By forming the oxide layer on the silicon substrate and carrying out surface nitriding treatment on the oxide layer, the interface stability of the oxide layer can be improved, and the recombination of carriers at the interface can be inhibited. Meanwhile, boron-doped polycrystalline silicon is deposited in the deep groove, and boron is diffused towards the side wall of the groove through heat treatment to form a surface pinning layer, so that the pixel charge storage capacity is enhanced. The nitriding treatment can effectively control the boron diffusion depth and concentration, avoids reverse doping of the shallow layer of the photodiode, improves the dielectric constant of the side wall oxide layer, and increases the local capacitance and the controlled charge density. And negative potential is applied to the deep trench polycrystalline silicon, so that a stronger energy band downward bending effect can be formed, accumulation and recombination of interface carriers are further inhibited, and dark current and white point defects are reduced. According to the invention, through collaborative optimization of the nitriding oxide layer, polycrystalline silicon doping and potential regulation, comprehensive regulation of a deep trench interface electric field, carrier distribution and doping diffusion behaviors is realized, and the full well capacity, the imaging uniformity and the overall performance of the small-pixel image sensor are effectively improved on the premise of not increasing complex process steps.

The application discloses a low-frequency wide-band bending disc transducer driven by a moving coil-piezoelectric ceramic hybrid mode, which comprises a shell, a sealing groove is formed in the top end of the shell; a transducer vibration assembly is detachably connected above the shell; an axial-radial composite magnetic circuit assembly is connected below the shell; a plug is connected below the shell in communication; a water-tight cable joint is detachably connected to the plug; wherein the transducer vibration assembly is in contact with the water-tight cable joint through piezoelectric ceramic sheet wires and moving coil wires to realize electrical connection. The low-frequency acoustic performance of the transducer is good, the working frequency band is wide, the size is small, the weight is light, two vibration modes can be coupled, and low-frequency and wide-band sound wave emission of the transducer can be realized.