216 results about "Electron injection layer" patented technology

The invention relates to an electric injection quantum dot vertical cavity surface emitting laser and a preparation method thereof. The laser structure comprises a substrate, a bottom reflector, a first current expansion layer, a waveguide layer, an electron injection layer, an active layer, a hole injection layer, a second current expansion layer and a top reflector. A corresponding top reflector is arranged in an opening area in the waveguide layer and serves as a resonant cavity of the laser, and a light field is guided by the waveguide layer to be efficiently oscillated and amplified in the resonant cavity. In the preparation process, good lattice matching between the bottom reflector and the substrate is ensured through epitaxial growth, interface defects and stress are reduced, low-cost methods such as spraying, spin coating and ink-jet printing are used, operation is easy and convenient, and large-area preparation can be achieved. The laser realizes bottom light emission, optimizes current injection, improves light emission and heat dissipation performance, controls a resonant cavity light field to improve device performance, and has the advantages of low power consumption, high light beam collimation and the like.

The invention discloses a deep ultraviolet LED epitaxial structure, a deep ultraviolet LED device comprising the same and a preparation method, and the epitaxial structure sequentially comprises a sapphire substrate, an AlN nanowire array layer, an AlN intrinsic layer and an AlGaN light-emitting structure layer from bottom to top. The AlGaN light-emitting structure layer further comprises an n-type AlGaN electron injection layer, a quantum well active layer, a p-type AlGaN electron blocking layer and other device structures. According to the invention, the vertically arranged AlN nanowire array is introduced to replace a traditional AlN buffer layer, so that lattice mismatching stress caused by a substrate is significantly released, and the dislocation density of an epitaxial layer is effectively reduced; meanwhile, the introduction of the AlN intrinsic layer further flattens the epitaxial interface and optimizes the lattice quality, thereby providing a high-quality template for the growth of a high-performance AlGaN material. The epitaxial structure is suitable for an LED device in a deep ultraviolet band, and the crystal quality, the electrical property and the luminous efficiency of the device can be improved.

The present invention relates to a metal complex having a structure of chemical formula (I). The metal complex is applied to an organic light-emitting device which emits deep red or near-infrared light, and shows a lower driving voltage and higher luminous efficiency, and has greatly prolonged service life. Therefore, the metal complex has the potential of being applied in the field of organic light-emitting devices. Also provided is an organic light-emitting device, including a cathode, an anode, and an organic layer. The organic layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer; and at least one layer in the organic layer contains the compound of structural formula (I).

A semiconductor device includes a substrate, a buffer layer over the substrate, an n-type electrode overlapping the buffer layer, and an electron injection layer in contact with the n-type electrode over the buffer layer. The electron injection layer includes an n-type dopant and a first nitride semiconductor containing gallium. The first nitride semiconductor further contains at least one element of aluminum and indium.

According to the deep ultraviolet laser epitaxial structure and the epitaxial growth method thereof provided by the invention, the Al component of the first waveguide layer is linearly and progressively increased from the side close to the electron injection layer to the side close to the quantum well active layer; or the Al component of the second waveguide layer is linearly and progressively decreased from the side close to the quantum well active layer to the side close to the hole injection layer to form refractive index distribution which takes the barrier layer of the quantum well active layer as the highest refractive index point and gradually decreases towards one side (the n-type side or the p-type side), so that the light field is firmly bound near the quantum well active layer, and the light limiting capability is remarkably enhanced; meanwhile, high-low Al components of the p-type side (the second waveguide layer) gradually change to generate a strong polarization electric field, ionization of a p-type doped acceptor (such as Mg) can be promoted, two-dimensional hole gas (2DHG) can be induced, and the hole concentration is improved; the low-high Al components of the n-type side (the first waveguide layer) are gradually changed, so that two-dimensional electron gas can be induced, and the electron concentration is improved.

According to one embodiment, a display device includes an anode, an organic EL element layer including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer, and a cathode, wherein ΔE2_LUMO is defined as a potential barrier between the electron transport layer and the hole blocking layer, and the light-emitting layer, ΔE2_HOMO is defined as a potential barrier between the hole transport layer and the electron blocking layer, and the light-emitting layer, and each of ΔE2_LUMO and ΔE2_HOMO is 0.1 eV or higher and 0.5 eV or less.

A light-emitting device includes a first electrode, a second electrode, and an organic compound layer over a first insulating layer. The organic compound layer is between the first electrode and the second electrode. The second electrode and the organic compound layer are separated from a second electrode and an organic compound layer of at least one of a plurality of light-emitting devices adjacent to the light-emitting device. An outline of the second electrode and an outline of the organic compound layer are substantially aligned with each other when seen from a direction substantially perpendicular to a surface of the first insulating layer on which the first electrode is formed. The organic compound layer includes a light-emitting layer and an electron-injection layer. The electron-injection layer includes metal or a metal compound, a first organic compound, and a second organic compound. The first organic compound includes a π-electron deficient heteroaromatic ring. The second organic compound includes two or more heteroaromatic rings. The two or more heteroaromatic rings are bonded or condensed to each other and include three or more heteroatoms in total. The second organic compound interacts with the metal or the metal compound by two or more of the three or more heteroatoms as a multidentate ligand.

The invention discloses an air environment preparation method of a perovskite blue light emitting diode. The air environment preparation method comprises the following steps: S1, preparing a hole injection layer on the surface of an ITO anode; s2, preparing an interface modification layer on the upper surface of the hole injection layer to obtain an intermediate substance; s3, preparing a perovskite blue light emitting layer on the interface modification layer to obtain a substrate with a light emitting layer; s4, evaporating an electron injection layer on the surface of the light-emitting layer; and S5, evaporating a cathode on the surface of the electron injection layer. An alkane anti-solvent (isooctane, n-octane and n-hexane) is introduced for treatment in the process of processing a light-emitting layer by a solution, so that the brightness and the electroluminescent external quantum efficiency of the device are improved, and compared with the traditional process of preparing blue light PELEDs in an air environment by adopting diethyl ether as a treatment solvent, the electroluminescent external quantum efficiency of the device is improved by about one time. The electroluminescent spectrum of the perovskite blue light PeLEDs disclosed by the invention can show relatively good stability under the driving of different voltages and time.

A highly reliable light-emitting device is provided. The light-emitting device includes a first insulating layer, a first electrode, a second electrode, and an organic compound layer. The first electrode is formed over the first insulating layer. The organic compound layer is positioned between the first electrode and the second electrode. The contour of the second electrode is substantially aligned with the contour of the organic compound layer. The organic compound layer includes a light-emitting layer and an electron-injection layer. The electron-injection layer contains a metal or a metal oxide, a first organic compound, and a second organic compound. The first organic compound includes a first π-electron deficient heteroaromatic ring with an electron-donating group. The second organic compound includes a second π-electron deficient heteroaromatic ring. The LUMO level of the second organic compound is lower than or equal to that of the first organic compound by 0.20 eV or more.

The invention provides a vertical deep ultraviolet LED epitaxial structure and a preparation method thereof. The vertical deep ultraviolet LED epitaxial structure comprises a substrate, an intrinsic layer, a sacrificial layer, a first electron injection layer, an etching barrier layer, a second electron injection layer, a quantum well active layer, an electron barrier layer and a hole injection layer which are sequentially stacked from bottom to top. Wherein the etching barrier layer is made of an n-type doped AlGaN material or an n-type doped AlN material; the mass percentage content of an Al component of the etching barrier layer is 70%-100%; according to the invention, the etching barrier layer with a high Al component is inserted into the electron injection structure, and the high Al-N bond energy and strong chemical stability of the etching barrier layer are utilized, so that the subsequent epitaxial layer can be effectively prevented from being excessively corroded in the dry etching process of the sacrificial layer, and the interface damage is reduced; meanwhile, the etching barrier layer with the high Al component and the electron injection layer form a remarkable barrier difference, the high barrier can guide electrons to be transversely and uniformly diffused in the electron injection layer, and the current density uniformity of the quantum well active layer is improved.

A light-emitting element includes a first electrode, a hole transport region, an emission layer, an electron transport region, and a second electrode stacked sequentially. The electron transport region includes an electron transport layer and an electron injection layer, the electron transport layer includes a first electron transport layer and a second electron transport layer on the first electron transport layer, the second electrode includes a second-first electrode on the second electron transport layer, and a second-second electrode adjacent to the second-first electrode in a plan view, the second-first electrode includes a first metal, the second-second electrode includes the first metal and a second metal, and a surface energy of a material included in the second electron transport layer is lower than a surface energy of the first metal, and higher than a surface energy of the second metal.

The invention discloses a sulfaguanidine modified inorganic tin-based perovskite light-emitting diode and a preparation method thereof, and belongs to the field of luminescent material preparation, the preparation method comprises the following steps: preparing a perovskite precursor solution which comprises cesium iodide, stannous iodide, sulfaguanidine and an organic solvent; applying the perovskite precursor solution to a substrate to form a wet film; carrying out annealing treatment on the wet film so as to form a perovskite light-emitting layer containing CsSnI3 perovskite and sulfaguanidine; a hole transport layer is formed on an anode conductive substrate, and a perovskite light-emitting layer is adopted on the hole transport layer; and sequentially forming an electron transport layer, an electron injection layer and a cathode electrode on the perovskite light-emitting layer. The process is simple and suitable for popularization and application.

The present application relates to the technical field of organic optoelectronic materials and devices, in particular to a preparation method of white organic light-emitting diodes based on a kind of blue, yellow and other color cMa copper (I) TADF complex with nitrogen heterocyclic carbene-copper-arylamines structure, including three steps: first, synthesis of cMa type copper (I) TADF complex containing blue light emitter and yellow light emitter as representative, obtained by ligand selection, intermediate preparation and purification;Second, construct layered WOLEDs device, from bottom to top in turn for substrate, ITO anode, hole injection layer, hole transport layer, buffer layer, yellow light emitting layer, blue light emitting layer, electron transport layer, electron injection layer and Al cathode;Third, through substrate pretreatment, mbar high vacuum evaporation and nitrogen glove box packaging complete device preparation.The WOLEDs device W1, W2 prepared by the present application has excellent photoelectric performance, the CRI is up to 83, the maximum external quantum efficiency is greater than or equal to 13.3%, has good stability and low cost, and is suitable for lighting and display fields.

A display device with a novel structure is provided.SOLUTION: The display device includes a power supply line, a first transistor, a second transistor, a light-emitting device, and a light-receiving device. The light-emitting device includes a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode which are stacked in this order. In the light-receiving device, a third electrode, an active layer, a first hole-transport layer, an electron-injection layer, and a second electrode are stacked in this order. The first electrode is electrically connected to one of a source and a drain of the first transistor. The second electrode is electrically connected to one of a source and a drain of the second transistor. The power supply line is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor.SELECTED DRAWING: Figure 1

Disclosed in the present application are a display panel and a display apparatus. The display panel comprises a substrate, a first electrode layer, a hole injection layer, a hole transport layer, a first light-emitting layer, an electron transport layer, an electron injection layer and a second electrode layer, which are arranged in a stacked manner, wherein the electron transport layer is doped with a first doping material; the electron injection layer is doped with a second doping material and a third doping material; and the second doping material comprises a metal material, and the third doping material comprises a complex, which is formed by means of a metal material and a second organic material.

A display apparatus includes a light-emitting diode, the light-emitting diode including a first electrode on a substrate, an emission layer on the first electrode, an electron injection layer on the emission layer, an auxiliary layer on the electron injection layer, and a second electrode on the auxiliary layer, wherein the electron injection layer includes a first material, the auxiliary layer includes a second material, and a surface energy of the second material is greater than a surface energy of the first material.

The invention discloses a deep ultraviolet LED with a triangular barrier superlattice hole injection layer and a preparation method, and relates to the technical field of light emitting diodes, and the deep ultraviolet LED with the triangular barrier superlattice hole injection layer comprises a substrate; the buffer layer, the semiconductor electron injection layer, the multi-quantum well active region, the electron blocking layer, the triangular barrier superlattice hole injection layer, the GaN hole injection layer and the first electrode are sequentially stacked on the surface of the substrate; a second electrode connected to the semiconductor electron injection layer; in the first direction, the triangular barrier superlattice hole injection layer comprises a plurality of periodic superlattice structures which are sequentially stacked on the surface of the electron blocking layer, each superlattice structure comprises a barrier layer and a well layer which are sequentially stacked, the barrier layer is AlGaN with linearly reduced Al component, the well layer is AlyGa1-yN with fixed component, and y is a constant larger than 0 and smaller than 1; wherein the first direction is perpendicular to the substrate and points to the first electrode from the substrate.

The display device includes: a hole transport region disposed on a substrate; a first light-emitting layer disposed in the first light-emitting region on the hole transport region and generating light of a first color; a second light-emitting layer disposed in a second light-emitting region on the hole transport region and generating light of a second color different from the first color; a third light-emitting layer disposed in a third light-emitting region on the hole transport region, the third light-emitting layer generating light of a third color different from the first and second colors; an electron transport layer disposed on the first to third light emitting layers; a first electron injection layer disposed in the first light emitting region on the electron transport layer and having a first thickness; a second electron injection layer disposed in a second light emitting region on the electron transport layer and having a second thickness thinner than the first thickness; and a third electron injection layer disposed in the third light emitting region on the electron transport layer and having a third thickness thinner than the first thickness.

The present invention discloses an organic light-emitting diode (OLED), comprising a transparent substrate, an anode, a first organic acceptor layer, a first organic heterojunction, a first organic donor layer, an electron blocking layer, a light-emitting layer, an electron transport layer, a LiF / Al layer, a second organic acceptor layer, a second organic heterojunction, a second organic donor layer, and a cathode, stacked in order from bottom to top. The first organic acceptor layer, the first organic heterojunction, and the first organic donor layer constitute a hole injection layer; the second organic acceptor layer, the second organic heterojunction, and the second organic donor layer constitute an electron injection layer. The present invention has higher charge generation efficiency, overcomes the device's dependence on the electrode work function, and improves device stability.

The present specification relates to a compound represented by chemical formula 1, and an organic light-emitting element comprising the compound. The organic light-emitting element includes: a first electrode; a second electrode; and one or more organic material layers provided between the first electrode and the second electrode, wherein at least one of the organic material layers may comprise the compound represented by chemical formula 1. Specifically, the organic material layers comprise at least one layer among an electron transport layer, an electron injection layer, and an electron injection and transport layer, and at least one of the layers may include the compound represented by chemical formula 1.

The application discloses a homojunction organic electroluminescent diode and a preparation method and application thereof. The composition of the homojunction organic electroluminescent diode comprises a substrate, a bottom electrode, a first light-emitting unit, a charge generation layer, a second light-emitting unit and a top electrode which are sequentially arranged in layers, the composition of the first light-emitting unit comprises an electron injection layer, a first electron transport layer and a first light-emitting layer, the composition of the charge generation layer comprises a hole transport layer, a first hole injection layer, a metal layer and a second electron transport layer, the composition of the second light-emitting unit comprises a second light-emitting layer and a second hole injection layer, and the host materials of the first electron transport layer, the first light-emitting layer, the hole transport layer, the second electron transport layer and the second light-emitting layer are the same. The homojunction organic electroluminescent diode has the advantages of high luminous brightness, high efficiency, high stability, wide applicable types of preparation materials and the like, and can be used as an excitation light source of an organic solid laser diode.

Provided is an encapsulation structure which is applicable for encapsulating an electroluminescent device, and includes: a first inorganic dielectric layer provided with a surface for being attached to a surface of a cathode layer of the electroluminescent device; wherein a dispersion relation among the first inorganic dielectric layer, the cathode layer and an electron injection layer of the electroluminescent device satisfies a preset condition, wherein the preset condition is configured to define an optical parameter of a first interface, the optical parameter is related to dispersion and is configured to couple surface plasmon polaritons (SPPs) on interfaces of two sides of the cathode layer, and the first interface is an interface between the first inorganic dielectric layer and the cathode layer.

The present application discloses an organic light-emitting display panel and a display device, relating to the field of display technologies, and having a relatively high luminous brightness. The organic light-emitting display panel includes a substrate and a plurality of pixel structures arrayed on the substrate. Each sub-pixel structure in each pixel includes a cathode, an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, and an anode that are sequentially arranged side by side on the substrate. Taking the direction perpendicular to the substrate as the height direction and the direction parallel to the substrate as the width direction, the heights of the cathode, the electron injection layer, the electron transport layer, the light-emitting layer, the hole transport layer, the hole injection layer, and the anode are respectively greater than the widths of the cathode, the electron injection layer, the electron transport layer, the light-emitting layer, the hole transport layer, the hole injection layer, and the anode.

A high-efficiency GaN-based LED chip on graphene and its fabrication method are disclosed, belonging to the field of semiconductor optoelectronic materials and devices technology. It consists sequentially of a substrate layer, a graphene layer, an AlN buffer layer, a GaN template layer, an n-GaN electron injection layer, an InGaN / GaN multi-quantum-well active region, and a p-AlN layer. x Ga 1‑x N electron blocking layer, p-GaN hole injection layer, p ++ The system consists of a GaN ohmic contact layer, an n-type electrode layer, and a p-type electrode layer. The graphene surface is pretreated with nitrogen plasma, which significantly increases the nucleation density of AlN on the graphene surface. Furthermore, the AlN buffer layer includes both low-temperature and high-temperature AlN layers, effectively promoting the lateral merging of AlN nucleation islands, thus facilitating the formation of a smooth, high-quality GaN template layer on the graphene. Based on this high-quality GaN template layer, the luminous efficiency of the LED chip can be significantly improved.

A nanoimprint DMD fabrication method for wide-viewing-angle double-sided OLED displays belongs to the field of organic light-emitting diodes. The method involves fabricating a photoresist grating structure; spin-coating a PDMS mixture onto a photoresist, applying pressure, and annealing to obtain a PDMS template with a grating structure; fabricating a hole injection / transport layer on a pre-prepared ITO glass substrate, followed by the fabrication of an emissive layer; evaporating an electron transport layer (TmPyPB); and after cooling, imprinting with the PDMS template to obtain a TmPyPB layer with a grating structure. The grating structure has a period of 430±5 nm and a height of 40±5 nm. Evaporating an electron injection layer (LiF), a cathode (Al+Ag), and an outermost cladding layer (HATCN) yields the wide-viewing-angle double-sided OLED. This method improves transmittance and overall brightness, exhibits near-zero haze high transmittance, a Lambertian-like radiation distribution, and excellent color stability at viewing angles greater than 110°.

A conductor device structure and method for fabricating the same is provided that utilizes the vacancy properties of two-dimensional materials to selectively control the semiconductor type of halide perovskite thin films. [Solution] A halide perovskite-based complementary semiconductor device 100 according to an embodiment of the present invention includes a substrate 120, a two-dimensional material layer 140 formed on the upper surface side of the substrate and including a hole injection layer and an electron injection layer, a halide perovskite layer 150 formed on the two-dimensional material layer, and an electrode layer 160 formed on the halide perovskite layer and including a drain electrode 160-1, output electrodes 160-2, 160-3 and a source electrode 160-4.

Provided is an organic light-emitting device comprising: a light emitting layer comprising a compound of the following Chemical Formula 1, and one or more of an electron transport layer, an electron injection layer, or an electron transport and injection layer that comprises at least one of a compound of the following Chemical Formula 2 and a compound of the following Chemical Formula 3:wherein Ar2 and Ar3 are each independently a substituent of Chemical Formula 4,where X1 to X5 are each independently N or C(R8), wherein at least two of X1 to X5 are N, and the other substituents are as defined in the specification. The organic light emitting device including the heterocyclic compound of Chemical Formula 1 and the heterocyclic compound of Chemical Formula 2 or 3 had significantly superior efficiency and lifespan.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to an electron injection material and an OLED (Organic Light Emitting Diode). An electron injection layer material containing an N atom group is used as a main body material and is subjected to co-evaporation with low-work function metal to form an electron injection layer; the compound containing the N atom group in the main body material binds the low work function metal, so that the stability of the metal in the electron injection layer is improved, the interface bonding effect between the cathode and the electron transmission layer is optimized, the active metal content of the electron injection layer is reduced, the layering influence between the organic layer and the metal is reduced, and the performance of the device is improved. And the device life and luminous efficiency are improved.

The application relates to a high-efficiency organic electroluminescent device and a preparation method thereof, which comprises sequentially preparing a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, a cathode on an anode to obtain the organic electroluminescent device, wherein the light-emitting layer comprises a compound with a structure of formula I. The application adopts a new thermally activated delayed fluorescence material, thereby having excellent light-emitting performance, and meanwhile, high efficiency and low roll-off can be realized, which will bring huge application prospects and economic values.