29 results about "Electron injection layer" patented technology

The present application relates to the technical field of organic optoelectronic materials and devices, in particular to a preparation method of white organic light-emitting diodes based on a kind of blue, yellow and other color cMa copper (I) TADF complex with nitrogen heterocyclic carbene-copper-arylamines structure, including three steps: first, synthesis of cMa type copper (I) TADF complex containing blue light emitter and yellow light emitter as representative, obtained by ligand selection, intermediate preparation and purification;Second, construct layered WOLEDs device, from bottom to top in turn for substrate, ITO anode, hole injection layer, hole transport layer, buffer layer, yellow light emitting layer, blue light emitting layer, electron transport layer, electron injection layer and Al cathode;Third, through substrate pretreatment, mbar high vacuum evaporation and nitrogen glove box packaging complete device preparation.The WOLEDs device W1, W2 prepared by the present application has excellent photoelectric performance, the CRI is up to 83, the maximum external quantum efficiency is greater than or equal to 13.3%, has good stability and low cost, and is suitable for lighting and display fields.

A high-efficiency GaN-based LED chip on graphene and its fabrication method are disclosed, belonging to the field of semiconductor optoelectronic materials and devices technology. It consists sequentially of a substrate layer, a graphene layer, an AlN buffer layer, a GaN template layer, an n-GaN electron injection layer, an InGaN / GaN multi-quantum-well active region, and a p-AlN layer. x Ga 1‑x N electron blocking layer, p-GaN hole injection layer, p ++ The system consists of a GaN ohmic contact layer, an n-type electrode layer, and a p-type electrode layer. The graphene surface is pretreated with nitrogen plasma, which significantly increases the nucleation density of AlN on the graphene surface. Furthermore, the AlN buffer layer includes both low-temperature and high-temperature AlN layers, effectively promoting the lateral merging of AlN nucleation islands, thus facilitating the formation of a smooth, high-quality GaN template layer on the graphene. Based on this high-quality GaN template layer, the luminous efficiency of the LED chip can be significantly improved.

A nanoimprint DMD fabrication method for wide-viewing-angle double-sided OLED displays belongs to the field of organic light-emitting diodes. The method involves fabricating a photoresist grating structure; spin-coating a PDMS mixture onto a photoresist, applying pressure, and annealing to obtain a PDMS template with a grating structure; fabricating a hole injection / transport layer on a pre-prepared ITO glass substrate, followed by the fabrication of an emissive layer; evaporating an electron transport layer (TmPyPB); and after cooling, imprinting with the PDMS template to obtain a TmPyPB layer with a grating structure. The grating structure has a period of 430±5 nm and a height of 40±5 nm. Evaporating an electron injection layer (LiF), a cathode (Al+Ag), and an outermost cladding layer (HATCN) yields the wide-viewing-angle double-sided OLED. This method improves transmittance and overall brightness, exhibits near-zero haze high transmittance, a Lambertian-like radiation distribution, and excellent color stability at viewing angles greater than 110°.

A display device includes a pixel electrode, a pixel defining layer disposed on the pixel electrode and forming an opening which exposes a portion of the pixel electrode, an auxiliary electrode disposed on the pixel defining layer and the pixel electrode, an intermediate layer disposed on the pixel defining layer and the auxiliary electrode and a common electrode disposed on the intermediate layer. The pixel defining layer includes a recessed portion recessed into the pixel defining layer, the auxiliary electrode includes a first undercut forming portion disposed on the recessed portion and contacting the portion of the pixel electrode, and the intermediate layer includes a hole injection layer, a light-emitting layer and an electron injection layer stacked sequentially. The hole injection layer includes a first portion disposed on the first undercut forming portion and a second portion separated from the first portion and disposed on the recessed portion.

A display panel and an evaporation method for the display panel. The display panel includes: a first electrode, a second electrode and a light emitting structure layer positioned between the first electrode and the second electrode. The light emitting structure layer includes: a light emitting layer; an electron transport layer arranged on a side of the light emitting layer facing away from the first electrode, and including a plurality of doped layers that are stacked; an electron injection layer positioned on a side of the electron transport layer facing away from the light emitting layer. The electron transport layer has a reference plane positioned in the middle of the electron transport layer along the thickness direction of the display panel.

A display device capable of high-quality images can be provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first light-emitting layer and a first electron-injection layer over the first light-emitting layer, and the second light-emitting element includes a second light-emitting layer and a second electron-injection layer over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is placed between the first electron-injection layer and first light-emitting layer and the second electron-injection layer and second light-emitting layer. The first electron-injection layer comprises a region projecting from the side surface of the first light-emitting layer, and the second electron-injection layer comprises a region projecting from the side surface of the second light-emitting layer.

The present invention provides a display device that has the function of detecting an object that is in contact with or close to the display unit. [Solution] A display device having a light-emitting element and a light-receiving element. The light-emitting element has a first pixel electrode, a first functional layer, a light-emitting layer, a common layer, and a common electrode, and the light-receiving element has a second pixel electrode, a second functional layer, a light-receiving layer, a common layer, and a common electrode. The first functional layer has either a hole injection layer or an electron injection layer, and the second functional layer has either a hole transport layer or an electron transport layer. In the light-emitting element, the common layer functions as the other of the hole injection layer or the electron injection layer, and in the light-receiving element, it functions as the other of the hole transport layer or the electron transport layer.

This invention relates to the field of electroluminescence technology and discloses an organic electroluminescent device and its application. The organic electroluminescent device includes, from bottom to top, an anode layer, a first coordination-activated electron transport layer, an interface modification layer, a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, a second coordination-activated electron transport layer, an electron injection layer, and a cathode layer. The coordination-activated electron transport layer is composed of a non-alkali metal n-type dopant and an organic electron transport material, wherein the organic electron transport material is composed of a nitrogen-containing heterocyclic chelate ligand without lone pair electron-emitting unit modification. The coordination-activated electron transport layer of this invention possesses high conductivity and the function of controlling the optical microcavity of the device. During optical microcavity control, it does not significantly increase the device driving voltage, avoids pixel crosstalk caused by lateral current leakage, and works synergistically with the interface modification layer and the hole injection layer to solve the heterojunction interface energy level mismatch, thereby improving device lifetime and voltage stability.

The present invention provides a novel compound which can be applied to at least one of an electron injection layer (EIL), an electron transport layer (ETL), a hole blocking layer (HBL), a layer which simultaneously injects and transports electrons, and a charge generation layer (CGL), and an organic light-emitting device comprising the novel compound.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The application discloses a preparation method of a tin-based perovskite light-emitting diode and belongs to the technical field of perovskite light-emitting diodes. The method comprises the following steps: synthesizing 2-(1-cyclohexenyl)ethylamine hydroiodide (CHEAI); preparing a perovskite precursor solution containing stannous iodide, CHEAI, tin powder, SnF2 and a reducing acid; spin-coating a PEDOT:PSS hole injection layer on an ITO anode; depositing a light-emitting layer by spin-coating and anti-solvent treatment; and evaporating a TPBi electron injection layer and a LiF / Al cathode. By introducing the reducing acid, the crystallization rate of the tin-based perovskite is effectively slowed down, Sn 2+ oxidation is inhibited, and the defect density of the thin film is reduced. The maximum brightness of the obtained red light PeLEDs reaches 476 cd / m 2 , the external quantum efficiency reaches 0.38%, which is about 41% and 58.3% higher than those of a device without the reducing acid, and the light-emitting peak position is stable at 611 nm.

This invention proposes a perovskite quantum dot light-emitting diode (LED) based on an insulating polymer-doped hole functional layer and its fabrication method. The LED, from bottom to top, comprises a glass substrate, an anode, a hole functional layer containing a doped insulating polymer, a perovskite quantum dot light-emitting layer, a bilayer electron transport layer, an electron injection layer, and a cathode. This invention utilizes a blending spin-coating process to fabricate a hole functional layer with a spontaneous phase separation structure and demonstrates a method for fabricating perovskite quantum dot LEDs. The device structure is novel, stable, and efficient. The fabricated hole functional layer can self-assemble at the light-emitting layer interface to form an insulating passivation network, exhibiting excellent characteristics such as passivating interface defects, reducing interface corrosion, regulating hole transport rate, and achieving carrier injection balance. The fabricated perovskite quantum dot LED possesses excellent electroluminescence efficiency and external quantum efficiency, showing great application potential in high-brightness, long-lifetime, and high-resolution display technologies.

Provided is a display device containing quantum dots. A display device includes a display area. The display area includes a light emitting device in which a first electrode, a first layer between the first electrode and an emitting layer, the emitting layer, a second layer between the emitting layer and a second electrode, and the second electrode are stacked in that order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. An electron transport layer or an electron injection layer is provided in the first layer between the first electrode and the emitting layer, or in the second layer between the emitting layer and the second electrode. The electron transport layer or the electron injection layer comprises SnO.

This invention relates to a class of organic compounds, and specifically to single-junction and tandem organic light-emitting devices employing these compounds. The compounds of this invention have the structure described below, where Q is selected from substituted or unsubstituted structures shown in formula (Q-1) or (Q-2). When the compounds of this invention are used as electron injection layer materials in single-junction organic light-emitting devices, and as n-type doped layer materials and electron injection layer materials in the connecting layers (n-type doped layer / n-type layer / p-row layer) of stacked organic light-emitting devices, the fabricated devices exhibit excellent stability and high efficiency.

A display substrate is provided, including: a base substrate; and a first electrode, a first light-emitting layer, a first hole blocking layer, a first electron transport layer, an electron injection layer, a second electrode, an optical extraction layer, a protective layer and an encapsulation layer sequentially arranged in a direction away from the base substrate. A refractive index of a material of the optical extraction layer is greater than that of a material of the protective layer, and the refractive index of the material of the protective layer is greater than that of a material of the second electrode.

The present application relates to a platinum complex luminescent material. The platinum complex is a compound having the structure represented by chemical formula (I) The present application also provides an organic electroluminescent device, including a cathode, an anode and an organic layer. The organic layer includes one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, or an electron injection layer. At least one layer of the organic layer contains the compound represented by formula (I).

A display device includes: a substrate; a first electrode on the substrate; an emissive layer on the first electrode; an electron transport layer on the emissive layer; an electron injection layer on the electron transport layer; and a second electrode on the electron injection layer and containing silver (Ag), wherein the electron transport layer includes: a first electron transport layer; and a second electron transport layer on a surface of the first electron transport layer, wherein a surface of the second electron transport layer contacts the electron injection layer, and a refractive index of the second electron transport layer is greater than a refractive index of the first electron transport layer, and wherein the second electrode includes: a first sub-electrode containing silver (Ag); and a second sub-electrode located on the first sub-electrode and containing ytterbium (Yb) and / or magnesium (Mg).

The application discloses a solution-processed light-emitting layer and a narrow-band organic electroluminescent device with a co-operated evaporation phosphor sensitized layer, and a preparation method and application thereof. The organic electroluminescent device comprises a substrate, a hole injection layer, a hole transport layer, a solution-processed light-emitting layer, an evaporation sensitized layer, an electron transport layer, an electron injection layer and a metal electrode in sequence. The terminal light-emitting layer is formed by solution processing, and the sensitized layer is formed by evaporation, so that the sensitizer can be introduced into the device in the form of an independent functional layer, thereby reducing the dependence on the direct solution blending condition, adjusting the sensitized layer thickness, the sensitizer concentration and the interlayer spatial relationship, optimizing the exciton generation and energy transfer process, reducing the local exciton density, weakening the exciton-exciton and exciton-polaron annihilation, and thus improving the external quantum efficiency, the efficiency roll-off and the working stability of the device.

The present invention provides a novel compound and an organic-light emitting device comprising same, wherein the novel compound can be applied to at least one of an electron injection layer (EIL), an electron transport layer (ETL), a layer that simultaneously injects and transports electrons, a hole blocking layer (HBL), and an N-type charge generation layer (N-CGL).

A light-emitting device that can be used in a display apparatus with high resolution, high efficiency, and high reliability is provided. The light-emitting device is manufactured by a photolithography method and includes a first electrode, a second electrode, and a first layer positioned therebetween. The first layer includes a light-emitting layer and an electron-injection layer, the electron-injection layer is a mixed layer including a first organic compound and a second organic compound, the first organic compound has strong basicity, the second organic compound has an electron-transport property, and the LUMO level of the first organic compound is higher than the LUMO level of the second organic compound.

The present application relates to the excimer luminescent material based on gold complex acceptor and its application. The excimer luminescent material is constructed by gold complex acceptor material and organic donor material, which is applied in organic light emitting diode, has lower driving voltage and higher luminescent efficiency, and can improve the service life of the device, and has potential application in the field of organic electroluminescent device. The present application also provides an organic electroluminescent device, which comprises a cathode, an anode and an organic layer, the organic layer is one or more of a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer, and at least one layer of the organic layer contains a compound in structural formula (I) and (II).

A light-emitting device having high reliability is provided. The light-emitting device includes a first electrode, a second electrode, and an EL layer. The EL layer is positioned between the first electrode and the second electrode. The EL layer includes a light-emitting layer, an electron-transport layer, and an electron-injection layer. The electron-transport layer is in contact with the electron-injection layer. The electron-injection layer has a function of blocking holes. The electron-transport layer is a layer including an organic compound having an electron-transport property and an organic compound having a hole-transport property.

The application discloses a blue phosphorescent organic light emitting diode, a display panel and a display device. The blue phosphorescent organic light emitting diode comprises a first electrode, an electron injection layer, an electron transport layer, a hole blocking layer, a blue phosphorescent light emitting layer, an electron blocking layer, a hole transport layer, a hole injection layer and a second electrode; the hole blocking layer comprises a blue phosphorescent light emitting material host material N type and a blue fluorescent hole blocking material; and / or the electron blocking layer comprises a blue phosphorescent light emitting material host material P type and a blue fluorescent electron blocking material; the mobility of the blue fluorescent hole blocking material is greater than the mobility of the blue phosphorescent light emitting material host material N type; and the mobility of the blue fluorescent electron blocking material is greater than the mobility of the blue phosphorescent light emitting material host material P type. The technical scheme reduces the working voltage of the blue phosphorescent organic light emitting diode.

The application discloses an infrared light spot detection device, method and system, and belongs to the fields of optoelectronic detection, organic semiconductor devices and computer vision technology. The detection device is an up-conversion device with an organic thin film cascade structure, and is sequentially provided with an ITO transparent anode, an electron transport / hole blocking layer, an infrared photosensitive layer, an interconnection layer / electron blocking layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode from top to bottom, and is packaged with an 8V-9V power supply module and a glass-glass ultraviolet curing adhesive sealing structure. The detection method irradiates the up-conversion device with infrared light spots, forms visible light intensity distribution through photon up-conversion, captures an image through a mobile terminal CMOS sensor, and then completes decoding, correction and quantization through an APP. The light spot area and power density are calculated based on the linear proportional relationship of a preset standard reference. The detection system is composed of the above device and the mobile terminal APP, realizes high-sensitivity detection of near-infrared and short-wave infrared band light spots, and can perform quantitative analysis on infrared light spots.

The present application relates to an organic electroluminescent element and a production method thereof. Provided is an organic electroluminescent element which is an organic electroluminescent element having, in the stated order, an anode, a hole injection layer, a first hole transport layer, a second hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, a cathode, and a capping layer, characterized in that the refractive index of the material of the capping layer is 1.90 or greater at a wavelength of 500 nm to 570 nm, the capping layer contains a compound (1-1) represented by the following formula (1-1), and the first hole transport layer contains a compound (3-1) represented by the following formula (3-1).

Provided is a light emitting device including a first electrode, a hole transport region on the first electrode, a first light emitting layer on the hole transport region and configured to emit light of a first wavelength, a second light emitting layer on the hole transport region and configured to emit light of a second wavelength different from the first wavelength, an electron transport region including an electron transport layer on the first light emitting layer and the second light emitting layer, and an electron injection layer on the electron transport layer, and a second electrode on the electron transport region, wherein the electron injection layer includes magnesium (Mg) and ytterbium (Yb).