136 results about "Electron injection layer" patented technology

The invention discloses a deep ultraviolet LED epitaxial structure, a deep ultraviolet LED device comprising the same and a preparation method, and the epitaxial structure sequentially comprises a sapphire substrate, an AlN nanowire array layer, an AlN intrinsic layer and an AlGaN light-emitting structure layer from bottom to top. The AlGaN light-emitting structure layer further comprises an n-type AlGaN electron injection layer, a quantum well active layer, a p-type AlGaN electron blocking layer and other device structures. According to the invention, the vertically arranged AlN nanowire array is introduced to replace a traditional AlN buffer layer, so that lattice mismatching stress caused by a substrate is significantly released, and the dislocation density of an epitaxial layer is effectively reduced; meanwhile, the introduction of the AlN intrinsic layer further flattens the epitaxial interface and optimizes the lattice quality, thereby providing a high-quality template for the growth of a high-performance AlGaN material. The epitaxial structure is suitable for an LED device in a deep ultraviolet band, and the crystal quality, the electrical property and the luminous efficiency of the device can be improved.

A semiconductor device includes a substrate, a buffer layer over the substrate, an n-type electrode overlapping the buffer layer, and an electron injection layer in contact with the n-type electrode over the buffer layer. The electron injection layer includes an n-type dopant and a first nitride semiconductor containing gallium. The first nitride semiconductor further contains at least one element of aluminum and indium.

According to the deep ultraviolet laser epitaxial structure and the epitaxial growth method thereof provided by the invention, the Al component of the first waveguide layer is linearly and progressively increased from the side close to the electron injection layer to the side close to the quantum well active layer; or the Al component of the second waveguide layer is linearly and progressively decreased from the side close to the quantum well active layer to the side close to the hole injection layer to form refractive index distribution which takes the barrier layer of the quantum well active layer as the highest refractive index point and gradually decreases towards one side (the n-type side or the p-type side), so that the light field is firmly bound near the quantum well active layer, and the light limiting capability is remarkably enhanced; meanwhile, high-low Al components of the p-type side (the second waveguide layer) gradually change to generate a strong polarization electric field, ionization of a p-type doped acceptor (such as Mg) can be promoted, two-dimensional hole gas (2DHG) can be induced, and the hole concentration is improved; the low-high Al components of the n-type side (the first waveguide layer) are gradually changed, so that two-dimensional electron gas can be induced, and the electron concentration is improved.

According to one embodiment, a display device includes an anode, an organic EL element layer including a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer, and a cathode, wherein ΔE2_LUMO is defined as a potential barrier between the electron transport layer and the hole blocking layer, and the light-emitting layer, ΔE2_HOMO is defined as a potential barrier between the hole transport layer and the electron blocking layer, and the light-emitting layer, and each of ΔE2_LUMO and ΔE2_HOMO is 0.1 eV or higher and 0.5 eV or less.

The invention provides a vertical deep ultraviolet LED epitaxial structure and a preparation method thereof. The vertical deep ultraviolet LED epitaxial structure comprises a substrate, an intrinsic layer, a sacrificial layer, a first electron injection layer, an etching barrier layer, a second electron injection layer, a quantum well active layer, an electron barrier layer and a hole injection layer which are sequentially stacked from bottom to top. Wherein the etching barrier layer is made of an n-type doped AlGaN material or an n-type doped AlN material; the mass percentage content of an Al component of the etching barrier layer is 70%-100%; according to the invention, the etching barrier layer with a high Al component is inserted into the electron injection structure, and the high Al-N bond energy and strong chemical stability of the etching barrier layer are utilized, so that the subsequent epitaxial layer can be effectively prevented from being excessively corroded in the dry etching process of the sacrificial layer, and the interface damage is reduced; meanwhile, the etching barrier layer with the high Al component and the electron injection layer form a remarkable barrier difference, the high barrier can guide electrons to be transversely and uniformly diffused in the electron injection layer, and the current density uniformity of the quantum well active layer is improved.

The invention discloses a sulfaguanidine modified inorganic tin-based perovskite light-emitting diode and a preparation method thereof, and belongs to the field of luminescent material preparation, the preparation method comprises the following steps: preparing a perovskite precursor solution which comprises cesium iodide, stannous iodide, sulfaguanidine and an organic solvent; applying the perovskite precursor solution to a substrate to form a wet film; carrying out annealing treatment on the wet film so as to form a perovskite light-emitting layer containing CsSnI3 perovskite and sulfaguanidine; a hole transport layer is formed on an anode conductive substrate, and a perovskite light-emitting layer is adopted on the hole transport layer; and sequentially forming an electron transport layer, an electron injection layer and a cathode electrode on the perovskite light-emitting layer. The process is simple and suitable for popularization and application.

The present application relates to the technical field of organic optoelectronic materials and devices, in particular to a preparation method of white organic light-emitting diodes based on a kind of blue, yellow and other color cMa copper (I) TADF complex with nitrogen heterocyclic carbene-copper-arylamines structure, including three steps: first, synthesis of cMa type copper (I) TADF complex containing blue light emitter and yellow light emitter as representative, obtained by ligand selection, intermediate preparation and purification;Second, construct layered WOLEDs device, from bottom to top in turn for substrate, ITO anode, hole injection layer, hole transport layer, buffer layer, yellow light emitting layer, blue light emitting layer, electron transport layer, electron injection layer and Al cathode;Third, through substrate pretreatment, mbar high vacuum evaporation and nitrogen glove box packaging complete device preparation.The WOLEDs device W1, W2 prepared by the present application has excellent photoelectric performance, the CRI is up to 83, the maximum external quantum efficiency is greater than or equal to 13.3%, has good stability and low cost, and is suitable for lighting and display fields.

A display device with a novel structure is provided.SOLUTION: The display device includes a power supply line, a first transistor, a second transistor, a light-emitting device, and a light-receiving device. The light-emitting device includes a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode which are stacked in this order. In the light-receiving device, a third electrode, an active layer, a first hole-transport layer, an electron-injection layer, and a second electrode are stacked in this order. The first electrode is electrically connected to one of a source and a drain of the first transistor. The second electrode is electrically connected to one of a source and a drain of the second transistor. The power supply line is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor.SELECTED DRAWING: Figure 1

A display apparatus includes a light-emitting diode, the light-emitting diode including a first electrode on a substrate, an emission layer on the first electrode, an electron injection layer on the emission layer, an auxiliary layer on the electron injection layer, and a second electrode on the auxiliary layer, wherein the electron injection layer includes a first material, the auxiliary layer includes a second material, and a surface energy of the second material is greater than a surface energy of the first material.

The display device includes: a hole transport region disposed on a substrate; a first light-emitting layer disposed in the first light-emitting region on the hole transport region and generating light of a first color; a second light-emitting layer disposed in a second light-emitting region on the hole transport region and generating light of a second color different from the first color; a third light-emitting layer disposed in a third light-emitting region on the hole transport region, the third light-emitting layer generating light of a third color different from the first and second colors; an electron transport layer disposed on the first to third light emitting layers; a first electron injection layer disposed in the first light emitting region on the electron transport layer and having a first thickness; a second electron injection layer disposed in a second light emitting region on the electron transport layer and having a second thickness thinner than the first thickness; and a third electron injection layer disposed in the third light emitting region on the electron transport layer and having a third thickness thinner than the first thickness.

A high-efficiency GaN-based LED chip on graphene and its fabrication method are disclosed, belonging to the field of semiconductor optoelectronic materials and devices technology. It consists sequentially of a substrate layer, a graphene layer, an AlN buffer layer, a GaN template layer, an n-GaN electron injection layer, an InGaN / GaN multi-quantum-well active region, and a p-AlN layer. x Ga 1‑x N electron blocking layer, p-GaN hole injection layer, p ++ The system consists of a GaN ohmic contact layer, an n-type electrode layer, and a p-type electrode layer. The graphene surface is pretreated with nitrogen plasma, which significantly increases the nucleation density of AlN on the graphene surface. Furthermore, the AlN buffer layer includes both low-temperature and high-temperature AlN layers, effectively promoting the lateral merging of AlN nucleation islands, thus facilitating the formation of a smooth, high-quality GaN template layer on the graphene. Based on this high-quality GaN template layer, the luminous efficiency of the LED chip can be significantly improved.

A nanoimprint DMD fabrication method for wide-viewing-angle double-sided OLED displays belongs to the field of organic light-emitting diodes. The method involves fabricating a photoresist grating structure; spin-coating a PDMS mixture onto a photoresist, applying pressure, and annealing to obtain a PDMS template with a grating structure; fabricating a hole injection / transport layer on a pre-prepared ITO glass substrate, followed by the fabrication of an emissive layer; evaporating an electron transport layer (TmPyPB); and after cooling, imprinting with the PDMS template to obtain a TmPyPB layer with a grating structure. The grating structure has a period of 430±5 nm and a height of 40±5 nm. Evaporating an electron injection layer (LiF), a cathode (Al+Ag), and an outermost cladding layer (HATCN) yields the wide-viewing-angle double-sided OLED. This method improves transmittance and overall brightness, exhibits near-zero haze high transmittance, a Lambertian-like radiation distribution, and excellent color stability at viewing angles greater than 110°.

A conductor device structure and method for fabricating the same is provided that utilizes the vacancy properties of two-dimensional materials to selectively control the semiconductor type of halide perovskite thin films. [Solution] A halide perovskite-based complementary semiconductor device 100 according to an embodiment of the present invention includes a substrate 120, a two-dimensional material layer 140 formed on the upper surface side of the substrate and including a hole injection layer and an electron injection layer, a halide perovskite layer 150 formed on the two-dimensional material layer, and an electrode layer 160 formed on the halide perovskite layer and including a drain electrode 160-1, output electrodes 160-2, 160-3 and a source electrode 160-4.

Provided is an organic light-emitting device comprising: a light emitting layer comprising a compound of the following Chemical Formula 1, and one or more of an electron transport layer, an electron injection layer, or an electron transport and injection layer that comprises at least one of a compound of the following Chemical Formula 2 and a compound of the following Chemical Formula 3:wherein Ar2 and Ar3 are each independently a substituent of Chemical Formula 4,where X1 to X5 are each independently N or C(R8), wherein at least two of X1 to X5 are N, and the other substituents are as defined in the specification. The organic light emitting device including the heterocyclic compound of Chemical Formula 1 and the heterocyclic compound of Chemical Formula 2 or 3 had significantly superior efficiency and lifespan.

The invention relates to the technical field of preparation of organic photoelectric materials, in particular to an electron injection material and an OLED (Organic Light Emitting Diode). An electron injection layer material containing an N atom group is used as a main body material and is subjected to co-evaporation with low-work function metal to form an electron injection layer; the compound containing the N atom group in the main body material binds the low work function metal, so that the stability of the metal in the electron injection layer is improved, the interface bonding effect between the cathode and the electron transmission layer is optimized, the active metal content of the electron injection layer is reduced, the layering influence between the organic layer and the metal is reduced, and the performance of the device is improved. And the device life and luminous efficiency are improved.

The application relates to a high-efficiency organic electroluminescent device and a preparation method thereof, which comprises sequentially preparing a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, a cathode on an anode to obtain the organic electroluminescent device, wherein the light-emitting layer comprises a compound with a structure of formula I. The application adopts a new thermally activated delayed fluorescence material, thereby having excellent light-emitting performance, and meanwhile, high efficiency and low roll-off can be realized, which will bring huge application prospects and economic values.

The application discloses a kind of exciplex sensitized phosphorescent organic electroluminescent devices, including transparent substrate, anode, hole injection layer, hole transport layer, organic light emitting layer, electron transport layer, electron injection layer, cathode arranged in sequence;Wherein, the organic light emitting layer includes: the exciplex of donor material, acceptor material is formed;And phosphorescent light emitting material;And, the mass ratio of the donor material and acceptor material is 3:7-7:3.The device structure not only can effectively improve the luminous efficiency of each color phosphorescent device, and can significantly improve the luminescence stability of exciplex phosphorescent device, to realize the construction of high stability, high efficiency exciplex phosphorescent device.

The invention discloses a preparation method of a pure red light quasi-two-dimensional perovskite light-emitting diode device which is formed by overlapping a glass substrate with a transparent electrode (ITO), a composite hole transport layer, a quasi-two-dimensional perovskite thin film light-emitting layer, an electron transport layer, an electron injection layer and a metal back electrode. A quasi-two-dimensional perovskite thin film luminescent layer is prepared through a one-step anti-solvent solution method with a simple process, thioacetic acid S-ethyl ester is used as a novel anti-solvent, and crystallization kinetics of quasi-two-dimensional perovskite is adjusted to influence formation and distribution of a mixed phase (n phase) in the thin film. Therefore, the regulation and control of the spectrum and the enhancement of the stability are realized, the radiation recombination efficiency of excitons is improved, and finally, an efficient pure red light quasi-two-dimensional perovskite light-emitting diode (PeLED) device is successfully prepared in combination with a vacuum evaporation method.

The present disclosure provides an organic electroluminescent device including: an anode; a cathode; and one or more organic material layers interposed between the anode and cathode and selected from the group consisting of a hole injection layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injection layer, and further including a lifetime enhancement layer (LEL) between the light emitting layer and the electron transporting layer.

An electroluminescent display device comprising: a substrate (100) which includes an active area (AA) where a plurality of pixels (P) is provided, wherein the plurality of pixels (P) includes a red pixel, a green pixel and a blue pixel; a circuit element layer (200) arranged on the substrate (100); a first electrode (310) arranged on the circuit element layer (200) in each of the red pixel, the green pixel and the blue pixel; an auxiliary electrode (320) which is arranged on the circuit element layer (200) and is spaced apart from the first electrode (310); a first light-emitting layer (510) arranged in each of the red pixel, the green pixel and the blue pixel on the first electrode (310), wherein the first light-emitting layer (510) comprises a hole injection layer (HIL), a hole transport layer (HTL) and a light-emitting material layer (EML) and wherein the light-emitting material layer (EML) in the blue pixel is a blue light-emitting material layer (EML(B)); a buffer layer (520) arranged on the first light-emitting layer (510) in the blue pixel, wherein the buffer layer (520) is an electron transport layer (ETL), wherein the buffer layer (520) is formed using an inkjet process, wherein the buffer layer (520) is arranged on the blue light-emitting material layer (EML(B)) and wherein the buffer layer (520) is not arranged on the auxiliary electrode (320); a second light-emitting layer (530), wherein the second light-emitting layer (530) is an electron injection layer (EIL); and a second electrode (600) which is arranged on the second light-emitting layer (530), wherein the second light-emitting layer (530) is arranged in the red pixel and the green pixel on the first light-emitting layer (510), in the blue pixel is arranged on the buffer layer (520) and is arranged on the auxiliary electrode (320).

Embodiments provide a light-emitting device and an electronic device including the light-emitting device. The light-emitting device includes a first electrode, a hole transfer region on the first electrode, an emission layer on the hole transfer region, an electron transfer region on the emission layer, and a second electrode on the electron transfer region. The second electron transfer region includes an electron transport layer, a first electron injection layer on the electron transport layer, and a second electron injection layer on the first electron injection layer. The first electron injection layer includes an organic host and a first metal dopant, and the second electron injection layer includes an inorganic metal compound having a band gap greater than or equal to about 2.8 eV.

A novel light-emitting device that is highly convenient, useful, or reliable is provided. The light-emitting device includes a second electrode over a first electrode with an EL layer therebetween. The EL layer includes at least a light-emitting layer, an electron-transport layer, and an electron-injection layer. The electron-transport layer is positioned over the light-emitting layer. An insulating layer is in contact with side surfaces of the light-emitting layer and the electron-transport layer. The electron-injection layer is positioned over the electron-transport layer. The electron-injection layer is in contact with the electron-transport layer and the insulating layer.

A display device includes a pixel electrode, a pixel defining layer disposed on the pixel electrode and forming an opening which exposes a portion of the pixel electrode, an auxiliary electrode disposed on the pixel defining layer and the pixel electrode, an intermediate layer disposed on the pixel defining layer and the auxiliary electrode and a common electrode disposed on the intermediate layer. The pixel defining layer includes a recessed portion recessed into the pixel defining layer, the auxiliary electrode includes a first undercut forming portion disposed on the recessed portion and contacting the portion of the pixel electrode, and the intermediate layer includes a hole injection layer, a light-emitting layer and an electron injection layer stacked sequentially. The hole injection layer includes a first portion disposed on the first undercut forming portion and a second portion separated from the first portion and disposed on the recessed portion.

The invention provides an organic light-emitting device which comprises a first electrode, a second electrode and an organic layer formed between the first electrode and the second electrode, and the organic layer comprises a hole injection layer, a hole transmission layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transmission layer and an electron injection layer. The light-emitting layer comprises a first component, a second component and a third component. According to the invention, a ternary host system is adopted, the host material of the luminescent layer is formed by three compounds with specific structures, and the scheme can effectively balance the injection and transmission of holes and electrons.

A display panel and an evaporation method for the display panel. The display panel includes: a first electrode, a second electrode and a light emitting structure layer positioned between the first electrode and the second electrode. The light emitting structure layer includes: a light emitting layer; an electron transport layer arranged on a side of the light emitting layer facing away from the first electrode, and including a plurality of doped layers that are stacked; an electron injection layer positioned on a side of the electron transport layer facing away from the light emitting layer. The electron transport layer has a reference plane positioned in the middle of the electron transport layer along the thickness direction of the display panel.

The invention discloses an organic light-emitting diode based on an enhancement layer and a barrier layer and a preparation method and application thereof. The invention relates to a blue light organic light-emitting diode based on an enhancement layer and a barrier layer. The blue light organic light-emitting diode is composed of an ITO substrate, a hole injection layer, a hole transport layer, an electron barrier layer, a heat exciton enhancement layer, a cold exciton barrier layer, a light-emitting layer, an electron transport layer, an electron injection layer and a metal electrode. Compared with a traditional matching scheme of a blue light subject and a narrow-emission blue light object, a heat exciton enhancement layer and a cold exciton barrier layer are added, an exciton recombination region is localized in the heat exciton enhancement layer, S1 and high-energy triplet exciton (Tn) are transferred to the light emitting layer in an energy transfer mode, and the light emitting efficiency is improved. And meanwhile, the cold exciton barrier layer can effectively avoid the return of T1, and the device prepared based on the method has good stability.

A display device capable of high-quality images can be provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first light-emitting layer and a first electron-injection layer over the first light-emitting layer, and the second light-emitting element includes a second light-emitting layer and a second electron-injection layer over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is placed between the first electron-injection layer and first light-emitting layer and the second electron-injection layer and second light-emitting layer. The first electron-injection layer comprises a region projecting from the side surface of the first light-emitting layer, and the second electron-injection layer comprises a region projecting from the side surface of the second light-emitting layer.

To provide a light-emitting device with low driving voltage and good characteristics. The light-emitting device includes a first electrode, a second electrode, and an organic compound layer, is formed on a first insulating layer, the first electrode is in contact with the first insulating layer, the organic compound layer is between the first electrode and the second electrode, the second electrode and the organic compound layer are separated from at least one of other multiple light-emitting devices adjacent to the light-emitting device, the profile of the second electrode is substantially consistent with the profile of the organic compound layer when viewed from a direction substantially perpendicular to the face of the first insulating layer on which the first electrode is formed, the organic compound layer includes a light-emitting layer and an electron injection layer, the electron injection layer is a mixed layer of a metal oxide and a first organic compound, and the first organic compound is an organic compound containing a phenanthroline ring having an electron-donating group.

The present invention provides a display device that has the function of detecting an object that is in contact with or close to the display unit. [Solution] A display device having a light-emitting element and a light-receiving element. The light-emitting element has a first pixel electrode, a first functional layer, a light-emitting layer, a common layer, and a common electrode, and the light-receiving element has a second pixel electrode, a second functional layer, a light-receiving layer, a common layer, and a common electrode. The first functional layer has either a hole injection layer or an electron injection layer, and the second functional layer has either a hole transport layer or an electron transport layer. In the light-emitting element, the common layer functions as the other of the hole injection layer or the electron injection layer, and in the light-receiving element, it functions as the other of the hole transport layer or the electron transport layer.

The utility model discloses a light emitting diode with an in-situ integration state sensing function, and belongs to the technical field of semiconductor devices. The light-emitting diode comprises a light-emitting diode epitaxial structure, and the light-emitting diode epitaxial structure sequentially comprises a substrate (1), a buffer layer (2), a first light absorption layer (3), an insertion layer (4), a second light absorption layer (5), an electron injection layer (6), a multi-quantum well layer (7), an electron blocking layer (8) and a hole injection layer (9) from bottom to top. The light emitting diode provided by the utility model has an in-situ integrated state sensing function, in an environment without ultraviolet light, a device does not emit light, and after external ultraviolet light is detected, the device emits visible light, so that real-time sensing and response to the state of the ultraviolet light can be intuitively realized, and a visible light intuitive warning effect is realized.