The invention belongs to the field of
metal oxide semiconductor-gas sensing, and particularly relates to a Ni < x > Fe < 2-x > O
semiconductor gas-sensitive material with asymmetric defects, a preparation method and application, the sensing material is characterized in that Ni is doped in a Fe2O3 framework to form a Ni < x > Fe < 2-x > O bimetallic
oxide rich in Ni-Ov-Fe asymmetric defects, Ni is used as a main
active site for adsorbing and catalyzing NO2, and the Ni is used as a main
active site for adsorbing and catalyzing NO2. And with the mutual reaction with
active oxygen on asymmetric defects on the surface of the material, the sensing performance on NO2 is improved. The Ni < x > Fe < 2-x > O sensing material is prepared through a hydrothermal-
calcination method, the interaction between
Ni element and other atoms in a Fe2O3 frame is remarkable, and the
electron transmission capacity is improved. The material is clear in labor division in the NO2 sensing process, NO2 and O2 have respective adsorption activation sites, then reaction is carried out, excellent NO2 sensing response performance and extremely low
detection limit (200 ppb) are shown, and a good foundation is laid for development of novel
metal oxide semiconductors.