The invention discloses a GaN vertical complementary
field effect transistor (VCFET) and an
inverter, the VCFET comprises a substrate, a first
transistor, a second
transistor and a
common gate electrode, and the first transistor and the second transistor are sequentially and vertically stacked on the substrate; the first transistor is an n-type transistor, the second transistor is a p-type transistor, and an integral structural form of a GaN buffer layer, an n-tube GaN channel layer, an AlGaN
barrier layer, a p-tube GaN channel layer and a p-tube GaN
doping layer is formed; the control of the n-type channel and the p-type channel at the same time is realized through a
common gate electrode. On the basis of the structure, the source
electrode of the p-type transistor is connected with a high level, the source electrode of the n-type transistor is connected with a low level, the drain electrodes of the two transistors are connected together and serve as an output end at the same time, and the gate electrodes serve as an input end, so that the phase
inverter can be realized. According to the VCFET, the
electronic transmission characteristics of high efficiency and low
power consumption are realized, the occupied area is smaller while the high performance is maintained, and the integration level is improved.