Nitride luminescent device and production method thereof

Abstract

The invention discloses a nitride luminescent device and a production method thereof, which relate to a semiconductor luminescent device and provide a nitride luminescent device with an asymmetric coupled multi-quantum well structure being the active area. The device at least comprises an n-type electron injection layer, a p-type hole injection layer and a multi-quantum well active layer which is sandwiched between the n-type electron injection layer and the p-type hole injection layer, and the active layer is composed of asymmetric coupled quantum well structures. The barrier layer of the quantum well is thinner, thus being easy to realize the tunneling of current carriers; transition energy between ground-state energy level in the quantum wells is gradually changed; the quantum wells with high transition energy are close to the p-type hole injection layer; and the quantum wells with low transition energy are close to the n-type electron injection layer. The active area structure can enhance the tunneling transportation of the holes in the quantum well active area, simultaneously block the tunneling transportation of electrons in the quantum well active area, improve the uneven distribution of current carriers in the active area of the nitride luminescent device, reduce electron leakage and energy band filling effect, and realize high-efficiency luminescence.

Description

technical field [0001] The present invention relates to a semiconductor light-emitting device, in particular to a nitride light-emitting device in which an asymmetrically coupled quantum well is an active region, such as a light-emitting diode (LED) or a laser diode (LD). Background technique [0002] GaN-based materials refer to GaN, InN, AlN and their ternary and quaternary compounds. They are direct band gap semiconductor materials with excellent mechanical and chemical properties. At room temperature, their emission wavelengths cover near-infrared, visible and deep ultraviolet bands. . Semiconductor light-emitting devices based on GaN-based materials have broad application prospects in the fields of large-screen full-color display, lighting, information storage, and medicine. [0003] At present, nitride light-emitting devices mainly use a multi-quantum well structure as the active layer, and the carrier injection method is bipolar input, that is, electrons and holes ar...

AI Technical Summary

Problems solved by technology

As the injection current increases, it will inevitably lead to a large number of carriers in the quantum well close to the p region, which will increase the probability of electron leakage from the active region, thereby greatly reducing the external quantum efficiency of the active region, which also leads to high output. The main reason for the sudden drop in power LED efficiency (X.F.Ni, Q.Fan, R.Shimada, et al., Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells, 2008, 93(17): 171113; J.Q.Xie, X.F. Ni, Q.Fan, et al., On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers, ApplPhys Lett, 2008, 93(12): 121107)

At the same time, due to the enhanced band filling effect, the emission wavelength will also undergo a significant blue shift.

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