Impurity segregation and Schottky source drain component and manufacturing method thereof
A Schottky potential, impurity technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of complex GAA source-drain design, solve thermal stability problems, good gate control ability, improve driving effect of current
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[0043] The present invention provides a MOS transistor with a novel structure, specifically a gate-all-around MOS transistor combined with a vertical channel, impurity separation and Schottky barrier source / drain structure (such as figure 1 shown), including a ring-shaped semiconductor channel 4 in a vertical direction, a ring-shaped gate electrode 6, a ring-shaped gate dielectric layer 5, a source region 2, an impurity segregation region 7, a drain region 3, and an impurity The segregation region 8 is a semiconductor substrate 1; wherein, the source region 2 is located at the bottom of the vertical channel 4 and is in contact with the substrate 1, and the impurity segregation region 7 is between the source region 2 and the vertical channel 4; the drain The region 3 is located on the top of the vertical channel 4, and the impurity separation region 8 is between the drain region 3 and the vertical channel 4; the gate dielectric layer 5 and the gate electrode 6 surround the verti...
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