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Impurity segregation and Schottky source drain component and manufacturing method thereof

A Schottky potential, impurity technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of complex GAA source-drain design, solve thermal stability problems, good gate control ability, improve driving effect of current

Active Publication Date: 2014-11-05
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the introduction of nanowires makes the source and drain design of GAA more complex than planar devices and multi-gate devices

Method used

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  • Impurity segregation and Schottky source drain component and manufacturing method thereof
  • Impurity segregation and Schottky source drain component and manufacturing method thereof
  • Impurity segregation and Schottky source drain component and manufacturing method thereof

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Embodiment Construction

[0043] The present invention provides a MOS transistor with a novel structure, specifically a gate-all-around MOS transistor combined with a vertical channel, impurity separation and Schottky barrier source / drain structure (such as figure 1 shown), including a ring-shaped semiconductor channel 4 in a vertical direction, a ring-shaped gate electrode 6, a ring-shaped gate dielectric layer 5, a source region 2, an impurity segregation region 7, a drain region 3, and an impurity The segregation region 8 is a semiconductor substrate 1; wherein, the source region 2 is located at the bottom of the vertical channel 4 and is in contact with the substrate 1, and the impurity segregation region 7 is between the source region 2 and the vertical channel 4; the drain The region 3 is located on the top of the vertical channel 4, and the impurity separation region 8 is between the drain region 3 and the vertical channel 4; the gate dielectric layer 5 and the gate electrode 6 surround the verti...

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Abstract

An impurity segregation and Schottky source drain component comprises an annular semiconductor channel in the perpendicular direction, an annular gate electrode, an annular gate medium layer, a source area, an impurity segregation area, a drain area, an impurity segregation area and a semiconductor substrate. The source area is located at the bottom of the channel in the perpendicular direction and connected with the substrate. The impurity segregation area is located between the source area and the channel in the perpendicular direction. The drain area is located at the top of the channel in the perpendicular direction. The impurity segregation area is located between the drain area and the channel in the perpendicular direction. The gate medium layer and the gate electrode surround the channel in the perpendicular direction in an annular mode. The source area and the drain area respectively make contact with Schottky which are the same as the channel in barrier height. The source end and drain end impurity segregation areas are highly doped areas with the same kind of impurities. According to the structure, the Schottky barrier source drain structure is used for lowering the thermal budget, decreasing leak currents and simplifying technology requirements, impurity segregation is used for thinning barriers and increasing driving currents, and the channel in the perpendicular direction and the annular gate structure are used for breaking through the photo-etching limitation in the integration machining process and increasing the integration level.

Description

technical field [0001] The invention belongs to the field of field-effect transistor logic devices and circuits in CMOS ultra-large integrated circuits (ULSI), in particular to a gate-all-around MOS transistor combined with a vertical channel, impurity segregation and Schottky barrier source / drain structure and its Preparation. Background technique [0002] Driven by Moore's Law, the feature size of traditional MOSFETs has been shrinking, and now it has entered the nanometer scale. As a result, the negative effects of short-channel effects on devices have become more serious. The effects of leakage-induced barrier reduction and band-band tunneling increase the off-state leakage current of the device. In the research on new device structures, the source-drain doped Gate All Around transistor (GAA) structure is currently the most concerned one. GAA devices have better gate control characteristics, which can meet the sharpest characteristic requirements, so as to meet the nee...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/812H01L21/338H01L29/417H01L29/06
CPCH01L29/0603H01L29/66666H01L29/7828H01L29/7839
Inventor 孙雷徐浩张一博韩静文王漪张盛东
Owner PEKING UNIV
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