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AlGaN-based tunneling junction structure based on polarization induced principle and preparation method thereof

A technology of polarization induction and tunneling junction, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of poor electrical characteristics and difficult doping of AlGaN with high Al composition, and achieve good performance and improved Effect of Tunneling Chance

Active Publication Date: 2019-05-21
上海镓旦电子信息有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problems of difficult doping and poor electrical characteristics of AlGaN with high Al composition in AlGaN-based tunneling junction diodes

Method used

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  • AlGaN-based tunneling junction structure based on polarization induced principle and preparation method thereof
  • AlGaN-based tunneling junction structure based on polarization induced principle and preparation method thereof
  • AlGaN-based tunneling junction structure based on polarization induced principle and preparation method thereof

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Embodiment 1

[0025] AlGaN-Based Polarization-Induced Tunneling Junctions on SiC Substrates

[0026] 1. Using MOCVD method, epitaxially prepare AlGaN-based polarization-induced tunneling junction structure on conductive n-type SiC substrate, such as figure 1 shown. The specific structure is as follows: in n-SiC (the doping concentration is 2×10 18 / cm 3 , the substrate can be purchased) and sequentially prepare n-Al on the substrate 1 0.3 Ga 0.7 N, template layer 2 (thickness 100nm), n-Al x1 Ga 1-x1 N polarization inducing doped layer 3 (thickness is 50nm, doping concentration is 5×10 18 / cm 3 , the TMAl source flow rate increased linearly from 7.13μmol / min to 25.67μmol / min within 300s, as shown in Table 1, the TMGa source flow rate decreased linearly from 37.78μmol / min to 18.89μmol / min, so that the x1 value linearly changed with the thickness, from 0.3 change to 0.6), Al 0.8 Ga 0.2 N insertion layer 4 (thickness 10nm, x2=0.8), p-Al x3 Ga 1-x3 N polarization inducing doped layer...

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Abstract

The invention relates to an AlGaN-based tunneling junction structure based on a polarization induced principle and a preparation method thereof, belonging to the technical field of semiconductor electronic devices. The AlGaN-based tunneling junction structure sequentially consists of a substrate, an Alx0Ga1-x0N template layer, an n-Alx1Ga1-x1N polarization induced doping layer, an Alx2Ga1-x2N insert layer, a p-Alx3Ga1-x3N polarization induced doping layer and a p-Alx4Ga1-x4N heavily doping layer from bottom to top, wherein the n-Alx1Ga1-x1N polarization induced doping layer, the Alx2Ga1-x2N insert layer and the p-Alx3Ga1-x3N polarization induced doping layer jointly form a polarization induced tunneling junction. The tunneling junction structure proposed by the invention is entirely composed of an AlGaN material, improves the problem of difficulty in high-Al component AlGaN doping by using a polarization induced doping method, also takes the high-Al component Alx2Ga1-x2N as the insertlayer, further improves the tunneling probability of the device, and obtains a tunneling junction device with good performance.

Description

technical field [0001] The invention belongs to the technical field of semiconductor electronic devices, and in particular relates to an AlGaN-based tunneling junction structure based on the principle of polarization induction and a preparation method thereof. Background technique [0002] Tunneling junction diodes, also known as Ezaki diodes, are composed of a p-n structure with degenerate (heavily doped) on both sides of p and n and a steep transition region. Its working principle is to realize reverse conduction of the diode through the tunneling effect. Traditional tunnel junctions are usually made of arsenide, antimonide and other materials. With the development of GaN-based LEDs in recent years, AlGaN-based tunnel junction diodes have begun to enter people's field of vision. AlGaN-based tunneling junction diodes can be used in ultraviolet LEDs to realize p-n inversion structures and improve carrier injection efficiency. In addition, the ultraviolet LED structure with ...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/32H01L33/00H01L29/885H01L21/329
Inventor 张源涛陈靓韩煦邓高强董鑫张宝林
Owner 上海镓旦电子信息有限公司
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