265results about How to "Improve luminescence stability" patented technology

The invention relates to a liquid crystal display device, in particular to a liquid crystal display device adopting an organic electroluminescent device as the backlight, wherein, an organic electroluminescent panel taken as the backlight is a lattice luminescent screen. The pixel in the organic electroluminescent panel of the invention is set to be matched with the pixel in a liquid crystal panel. The liquid crystal display device of the invention can not only achieve the effect of reducing OLED backlight power consumption, but also greatly enhance the uniformity and luminescence stability of the backlight screen body as the OLD panel is designed to be lattice luminescence, and the liquid crystal display device is also beneficial to improving the display effect of the LCD devices.

This invention discloses a glass ceramic for semiconductor illumination. The glass ceramic is composed of: SiO2 45-60 mol%, Al2O3 0-25 mol%, Na2O 0-10 mol%, NaF 0-10 mol%, ZnF2 0-20 mol%, MF2 0-40 mol%, CeF3 0.5-30 mol%, and RF3 0.1-20 mol%, wherein, M is one or more of Mg2+, Ca2+, Sr2+ and Ba2+, and R is one or more of Dy3+, Eu3+, Tb3+, Sm3+ and Pr3+. The glass ceramic is prepared by high temperature melting and thermal treatment. The preparation method has such advantages as simple process, no pollution and low cost. The glass ceramic has such advantages as broad excitation wavelength, high light brightness, high UV radiation resistance, high chemical stability and high thermal stability, and can be used to fabricate novel LED illuminator together with UV, violet or blue LED.

The present invention discloses a quantum dot luminescent layer and device, and preparation methods thereof, a luminescence module and a display device. The preparation method of the quantum dot luminescent layer comprises the steps: the quantum dots having the surfaces coated with ligand are dissolved in solvent to obtain the quantum dot solution; the quantum dot solution is deposited on the substrate or a function layer by employing the solution method to obtain a quantum dot luminescent layer; the quantum dot luminescent layer is arranged in a vacuum cavity, and organic metal compounds are pumped in to process for 0.5-30 mins, wherein the pressure in the cavity is 0.01-1mbar, the partial pressure of the organic metal compounds after gasification is 0.001-0.1mbar, the temperature in the cavity is 10-25 DEG C; and the quantum dot luminescent layer is taken out to obtain the quantum dot crosslinking luminescent layer. The quantum dot film is not only uniform flat and has a stable film, so that the quantum dot film is difficult to be redissolved to take away or wash away by the solvent when the subsequent other function layers are deposited so as to effectively improve the luminescence uniformity and the stability of the QLED.

The invention provides compounds, compositions, methods, substrates, and kits useful for analyzing the metabolic activity in cells, tissue, and animals and for screening test compounds for their effect on cytochrome P450 activity. In particular, a one-step and two-step methods using luminogenic molecules, e.g. luciferins or coelenterazines, that are cytochrome P450 substrates and that are also bioluminescent enzyme, e.g., luciferase, pro-substrates are provided. The present method further provides a method for stabilizing and prolonging the luminescent signal in a luciferase-based assay using luciferase stabilizing agents such as reversible luciferase inhibitors.

The invention relates to a multi-layer quantum dot film and a backlight module group. A quantum dot core layer, an upper water and oxygen barrier layer and a lower water and oxygen barrier layer are included. A first quantum dot microcapsule layer is arranged between the quantum dot core layer and the upper water and oxygen barrier layer. A second quantum dot microcapsule layer is arranged between the quantum dot core layer and the lower water and oxygen barrier layer. The first quantum dot microcapsule layer and the second quantum dot microcapsule layer comprise, by weight, 80-110 parts of matrix adhesives, 3-41 parts of quantum dot microcapsules and 1-15 parts of diffusion particles. Luminescence efficiency stability of the multi-layer quantum dot film is good. A test is performed under high temperature and high humidity conditions. Brightness and color gamut attenuation are low and small.

The invention provides a rare earth europium complex and a preparation method for europium red light transparent film based on a PVB matrix. A preparation method of the rare earth europium complex Eu(TTA)2Tpy-OCH3 comprises the following steps that Eu(TTA)2.4H2O and Tpy-OCH3 serve as initial raw materials, the molar ratio of the Eu(TTA)2.4H2O to the Tpy-OCH3 is 2:1, tetrahydrofuran serves as solvent, and a reaction is carried out for three hours at 75 DEG C under the backflow condition to obtain the europium complex. The synthesized europium complex and the polyvinyl butyral (PVB) matrix are dissolved with good solvent, and the europium red light film is obtained after the solvent naturally volatilizes completely. According to the rare earth europium complex and the preparation method for the europium red light transparent film based on the PVB matrix, the PVB is creatively selected as the matrix, the prepared novel efficient red light transparent film material has the advantages of the europium complex of being high in color purity and high in luminous efficiency, and the advantage of the PVB matrix of being high in mechanical strength, and the luminous material can be applied to electronic terminals such as computers, television sets and mobile phones, and mainly serves as the luminous material in the field of panel display.

The invention discloses glass ceramic used for semiconductor illumination, which comprises the following components in percentage by mol: 45 to 60 percent of SiO2, 0 to 20 percent of Al2O3, 0 to 15 percent of Na2O, 0 to 20 percent of ZnF2, 12 to 20 percent of CeF3, 1 to 3 percent of DyF3 and 1 to 3 percent of EuF3. The glass ceramic is prepared by adopting a high-temperature melting and thermal treatment process, and the method is simple, pollution-free and low in cost. The glass ceramic of the invention has the characteristics of wide exciting wavelength, high luminous brightness, ultraviolet radiation resistance, and good chemical stability and thermal stability. A novel LED illumination device can be made by matching the glass ceramic with an ultraviolet, purple-light or blue-light LED.

The invention relates to a lead sulfide-coated perovskite quantum dots-based electroluminescent LED and a preparation method. The electroluminescent LED comprises ITO glass as a bottom electrode, n-type ZnO/polyethyleneimine as an electron transport layer (ETL) and a hole blocking layer (HBL), PbS-coated perovskite quantum dots as a light-emitting layer, a p-type 4,4',4''-tris(carbazol-9-yl) aniline film as a hole transport layer (HTL) and an electron blocking layer (EBL), and MoO3/Au as a top electrode. The preparation method comprises the steps of firstly preparing a cesium oleic acid solution; preparing the PbS-coated CsPbI3 quantum dots, the electron transport layer, the hole blocking layer, the light-emitting layer, the hole transport layer and the electron blocking layer; and obtaining the PbS-coated perovskite quantum dots-based electroluminescent LED. By adopting the PbS-coated perovskite quantum dots, the photoelectric property of the perovskite quantum dots is improved, the stability of the quantum dots is ensured and good semiconductor performance of the quantum dots is kept at the same time, and the efficient and stable electroluminescent LED is prepared from the quantum dots as the light-emitting layer.

The embodiment of the invention provides an OLED substrate and a display device, which relate to the technical field of display, and can solve the problem that light emitted from a light emitting layer in the prior organic electroluminescent device is emitted onto an active layer and affects the characteristics of a thin film transistor. The OLED substrate comprises a substrate, a thin film transistor, a first electrode and a light emitting layer sequentially arranged on the substrate; The thin film transistor comprises an active layer; The OLED substrate further includes a light shielding layer disposed between the active layer and the first electrode. A light emit device for preventing that thin film transistor from beingaffected by light emitted from the light emitting layer.

The invention provides a nitride near infrared fluorescent material. The chemical formula of the material is AxMyBzSi5N8: (aEr, bEr, cR), wherein A is selected from one or two of La, Lu and Y; M is selected from at least one of Ca, Sr and Ba; B is selected from one of Li, Na and K; and T is selected from one of Yb and Pr; in the AxMyBzSi5N8: (aEr, bEr, cR), the value ranges of x, y and z meet thefollowing conditions: x is greater than or equal to 0.1 but less than or equal to 0.2, y is greater than or equal to 1.6 but less than or equal to 1.915, and z is greater than or equal to 0.1 but lessthan or equal to 0.2; and the value ranges of a, b and c meet the following conditions: a is greater than or equal to 0.1 but less than or equal to 0.1, b is greater than or equal to 0.05 but less than or equal to 0.1 and c is greater than or equal to 0.005 but less than or equal to 0.03.

The invention is applicable to the technical field of photoelectricity. The invention provides a rare earth doped perovskite nanocrystal, a preparation method thereof and a photoelectric detector. Therare earth doped perovskite nanocrystal is obtained by taking CsPbX3 perovskite nanocrystal as a matrix material and doping the Pb position of the CsPbX3 perovskite nanocrystal with Yb<3+> ions and metal ions, wherein the X position of the CsPbX3 perovskite nanocrystal is one of Cl, Br, I and F, and the metal ions are one of Mn<2+>, Cd<2+>, Ni<2+> and Cr<3+>. The rare earth doped perovskite nanocrystal provided by the embodiment of the invention has a good light-emitting effect and light-emitting stability, and is convenient to apply in practice. When the rare earth doped perovskite nanocrystal is applied to a photoelectric detector, the photoelectric detector can realize wide-band response with the wavelength of 200-1100nm, so that the application value of the photoelectric detector canbe improved.

A low-pressure mercury vapor discharge lamp has a light-transmitting discharge vessel (10) enclosing, in a gastight manner, a discharge space (13) provided with a filling of mercury and a rare gas. The discharge vessel comprises discharge means for maintaining a discharge in the discharge space. The discharge vessel is provided with a luminescent layer (17) comprising a mixture of at least a red and a green luminescent material. The red luminescent material comprises (Y,Gd)₂O₃:Eu. The green luminescent material comprises (Ba,Ca,Sr)₂SiO₄:Eu and/or (Sr,Ca,Ba,Mg,Zn)Si₂N₂O₂:Eu. Particles of the green luminescent material are surrounded by a coating of aluminum oxide. Preferably, at least 50% of the particles of the green and red luminescent materials have an average diameter greater than or equal to approximately 5 μm. The mixture of the red and green luminescent materials render a low-pressure mercury-vapor discharge lamp with an improved lumen equivalent.

The invention belongs to the technical field of backlight modules, and particularly relates to a fluorescent film for a backlight module and a manufacturing method of the fluorescent film. The manufacturing method includes the steps of (1), subjecting quantum dots and supersaturated saline solution to cocrystallization to form quantum-dot mixed crystal and grinding the quantum-dot mixed crystal completely; (2), adding adhesive into the quantum-dot mixed crystal while mixing uniformly and then adding in diffused particles while mixing uniformly to obtain a coating liquid for forming a quantum-dot layer; (3), coating a barrier film layer with the coating liquid for forming the quantum-dot layer to form a quantum-dot layer material; (4), laminating the other barrier film layer on the quantum-dot layer material to form a sandwich structure, and subjecting the sandwich structure to ultraviolet curing to obtain the fluorescent film. The fluorescent film manufactured by the method substitutes for a diffusion barrier of the conventional backlight module, improves color saturation and color gamut of the liquid crystal display greatly, and further can increase brightness and reduce power consumption.

The invention belongs to the technical field of luminescent materials, and particularly relates to a preparation method of silicon dioxide coated fluorescent carbon quantum dot composite microspheres.The method comprises the following steps: preparing carbon quantum dots by using a microwave reactor through a hydrothermal method, transferring the carbon quantum dots into an organic solvent through an extraction method, then adding ethanol, dispersing the carbon quantum dots into the ethanol solvent through solvent replacement, finally, adding carbon quantum dots in hydrolysis reaction of tetraethoxysilane under ammonia-alkali conditions, and coating the carbon quantum dots in situ in the growth process of silicon dioxide to obtain the silicon dioxide coated carbon quantum dot fluorescentcomposite microsphere. The preparation method is energy-saving, rapid, efficient and high in quantum dot coating rate, and the prepared fluorescent composite microsphere is regular in shape, uniform and adjustable in particle size, good in light-emitting stability and long in service life.

The invention provides a display device comprising a substrate, a first light emitting element and a second light emitting element. The substrate comprises at least one pixel area. The first light emitting element is arranged in the pixel area, and is used for emitting first coloured light, and has a first light emitting efficiency-injection current density function. The second light emitting element is arranged in the pixel area, and is used for emitting second coloured light, and has a second light emitting efficiency-injection current density function. The junction of the second light emitting efficiency-injection current density function and the first light emitting efficiency-injection current density function is used for defining a critical conversion current density, and the first coloured light and the second coloured light belong to the same colour system. By providing the display device, the power consumption of the display device can be effectively reduced, and the aim of high efficiency and energy conservation is achieved.

The invention relates to a method for improving stability of a quantum dot in a base material and application. The method is a method for enabling a quantum-dot material to be agglomerated in the basematerial to form a quantum-dot colloid micro-sphere. According to the method, a large agglomeration substance is formed by agglomerating the quantum dot in the base material, thus, the base materialis only contacted with the quantum dot of a surface layer of the agglomeration substance, and a surface ligand can be caused to fall off during the aging process (or a catalyst in colloid is used forcorroding the quantum dot to generate defect). While the base material and the internal quantum dot are isolated by the quantum dot (used as a sacrifice layer) of the surface layer, an effect of protecting the internal quantum dot is achieved, so that the light-emitting stability of the quantum dot in the base material is improved, and the service lifetime of the quantum dot in light-emitting application is further prolonged.

The invention relates to a preparation method for a 2-alkyl anthracene derivative. The preparation method comprises the following steps that zinc powder is taken as a reducing agent, and crystallized copper sulphate is taken as a catalyst; 2-alkyl substituted anthraquinone reacts inside strong aqua ammonia at a temperature of between 70 and 80 DEG C for 2 to 6 hours; the reaction solution is cooled down to room temperature, and is filtered; the filtrate is extracted 2 to 4 times by diethyl ether, and a filter cake undergoes Soxhlet extraction for 2 to 4 hours by means of diethyl ether; a diethyl ether phase is combined; and finally, the 2-alkyl anthracene derivative can be obtained through silica gel column chromatography. The zinc powder adopted by the preparation method has low price and abundant raw material sources; moreover, the preparation method has the advantages of moderate reaction conditions, simple and easy column chromatography separation, high yield and low cost, and has enormous application value and economic value.

The invention discloses an organic electro-luminescence device and its preparation. The device includes first and second electrode layers, positive hole transport layer between said two electrode layers, luminescence layer being able to transfer electron and buffer layer between first electrode and positive hole transport layer. The buffer layer is made by using heat evaporation plating method tocoat film of organic material on first electrode and the organic material is Teflon. The film on buffer layer possesses structure with nanometer size. The invention provides high efficiency for injection of positive hole and increases luminescence efficiency and stability.