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Glassceramic in applying to semiconductor illumination, and preparation method

A glass ceramic and semiconductor technology, applied in the field of glass ceramics of white light LED lighting devices and their preparation, can solve the problems of obvious light decay of phosphor powder, poor temperature stability, poor resistance to ultraviolet radiation, etc., and achieve high-intensity white light emission and low cost. , the effect of high luminous stability

Inactive Publication Date: 2007-12-26
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, more mature white LEDs are realized by using blue LEDs with yellow phosphors, but phosphors have problems such as obvious light attenuation, poor resistance to ultraviolet radiation, and poor temperature stability.

Method used

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  • Glassceramic in applying to semiconductor illumination, and preparation method
  • Glassceramic in applying to semiconductor illumination, and preparation method
  • Glassceramic in applying to semiconductor illumination, and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] By composition 50SiO 2 -20Al 2 o 3 -20CaF 2 -8CeF 3 -1DyF 3 -1EuF 3 Weigh SiO 2 , Al 2 o 3 , CaF 2 , CeF 3 , DyF 3 and EuF 3 , and mix the above-mentioned raw materials thoroughly, put them into a corundum crucible, and put them into a reducing atmosphere furnace that has been heated to 1350°C. The melt was quickly poured into a copper mold to obtain a glass sample. According to the DTA curve of the glass, the glass was heat-treated at 630° C. between the first crystallization peak temperature and the glass transition temperature for 2 hours to obtain glass ceramics. XRD analysis shows that CeF is distributed in the glass ceramics 3 nanocrystalline phase.

[0030] The excitation spectra of the glass ceramics prepared in this example under monitoring at 576nm and 440nm are shown in Figure 1 and Figure 2 respectively, and the results show that the effective excitation bands are all located at 300nm-400nm. Figure 3 and Figure 4 show the emission spectra of ...

Embodiment 2

[0032] By composition 45SiO 2 -25Al 2 o 3 -5Na 2 O-5NaF-10MgF 2 -9CeF 3 -1DyF 3 Weigh SiO 2 , Al 2 o 3 , Na 2 CO 3 , MgF 2 , CeF 3 and DyF 3 , and mix the above raw materials well, put them into a corundum crucible, put them into a reducing atmosphere furnace that has been heated to 1350°C, and melt the raw materials into a liquid state. Crucible, the molten material in the crucible is quickly poured into a copper mold to obtain glass. Differential thermal analysis was performed on the prepared glass, and the first crystallization peak temperature was 630°C and the glass transition temperature was 585°C. The glass was heat-treated at 630°C for 2 hours to obtain glass ceramics. XRD analysis shows that CeF is distributed in the glass ceramics 3 nanocrystalline phase.

Embodiment 3

[0034] By composition 60SiO 2 -10Al 2 o 3 -20CaF 2 -5CeF 3 -5DyF 3 Weigh SiO 2 , Al 2 o 3 , CaF 2 , CeF 3 and DyF 3 , and add 0.5mol% As to the above raw material 2 o 5 and 1mol% LiF, after fully mixed, put it into a quartz crucible, put it into a reducing atmosphere furnace that has been heated to 1400°C, and melt the raw material into a liquid state. The crucible was taken out, and the melt in the crucible was quickly poured into a copper mold to obtain a glass sample. According to the DTA curve of the glass, the first crystallization peak temperature is 662°C and the glass transition temperature is 602°C. The glass is heat-treated at 630°C for 2 hours to obtain glass ceramics. XRD analysis shows that CeF is distributed in the glass ceramics 3 nanocrystalline phase.

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Abstract

This invention discloses a glass ceramic for semiconductor illumination. The glass ceramic is composed of: SiO2 45-60 mol%, Al2O3 0-25 mol%, Na2O 0-10 mol%, NaF 0-10 mol%, ZnF2 0-20 mol%, MF2 0-40 mol%, CeF3 0.5-30 mol%, and RF3 0.1-20 mol%, wherein, M is one or more of Mg2+, Ca2+, Sr2+ and Ba2+, and R is one or more of Dy3+, Eu3+, Tb3+, Sm3+ and Pr3+. The glass ceramic is prepared by high temperature melting and thermal treatment. The preparation method has such advantages as simple process, no pollution and low cost. The glass ceramic has such advantages as broad excitation wavelength, high light brightness, high UV radiation resistance, high chemical stability and high thermal stability, and can be used to fabricate novel LED illuminator together with UV, violet or blue LED.

Description

field of invention [0001] The invention relates to a glass ceramic used in semiconductor lighting and a preparation method thereof, in particular to a glass ceramic used in a white LED lighting device and a preparation method thereof. Background technique [0002] In recent years, due to the rapid development of blue light, purple light and ultraviolet light LED (Light Emitting Diode, light emitting diode), it becomes possible for LED lighting devices to replace existing lighting devices in the lighting field. Compared with existing lighting devices, LED lighting has many advantages such as energy saving, environmental protection, low cost, high efficiency, short response time, long service life, impact resistance and vibration resistance, so it has become an ideal choice for a new generation of lighting devices. [0003] As an environmentally friendly new generation of lighting sources, LED mainly refers to white light LEDs. At present, more mature white LEDs are realized ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C10/00C03B32/02
CPCC03C10/00C03C3/112C03C3/062
Inventor 樊先平乔旭升赵达亮王锋王民权杨辉章向华
Owner ZHEJIANG UNIV
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