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1138 results about "Light attenuation" patented technology

LED (Light Emitting Diode) lamp filament and manufacturing method thereof

The invention provides an LED (Light Emitting Diode) lamp filament and a manufacturing method thereof. An LED chip is encapsulated on the edge top surface of a thin and long sheet metal support of the LED filament innovatively, meanwhile the sheet metal is inserted into a preformed transparent plastic model frame to produce a light source, and accordingly the automated continuous production of the LED lamp filament is implemented and the problem of the facing direction strength caused by the too thin and too long metal support is solved due to the transparent plastic model frame; meanwhile the lateral direction strength of the metal support is effectively utilized and accordingly the integral mechanical strength of the LED lamp filament is ensured; the heat dissipation characteristics of the metal is directly utilized, meanwhile the heat dissipation efficiency of the LED chip is maximized through the innovative encapsulation of thermal conductive coatings, and accordingly the problem of a heat dissipation bottleneck of the LED lamp filament is effectively solved, the LED lamp filament can work at the rated power for a long time, and the cost is reduced; the LED light extraction efficiency is improved, the light attenuation is reduced, the high lighting effect and ambient light of lamp filament light emission is implemented, and the market vacancy of the existing LED lamp filament is filled through innovative fluorescence encapsulation materials.
Owner:DONGGUAN RIWEI ELECTRONICS

Solar cell with composite dielectric passivation layer structure and preparation process thereof

The invention discloses a solar cell with a composite dielectric passivation layer structure and a preparation process thereof. A silicon oxide film, an alumina film and a silicon nitride or silicon oxynitride film are deposited in turn on the front, back and sides of a p-type silicon substrate to form a composite dielectric film on the whole surface, and windows are opened locally to lead electrodes out. Through aluminum oxide, silicon dioxide, silicon oxynitride, silicon nitride with different refractive indexes and a back surface passivation layer with a laminated structure of the materials, the back surface recombination rate is greatly reduced, the back reflectivity is improved, the CTM of a module is reduced, and the light attenuation and heat-assisted light attenuation and the anti-PID performance of the cell are improved. The structure can be made on a boron/gallium-doped p-type monocrystalline silicon, p-type polycrystalline silicon or p-type monocrystalline-silicon-like substrate, and a passivation method based on the composite dielectric film passivation structure can be used to manufacture PERC cells, double-sided PERC+ cells and imbricate PERC cells. Based on the preparation process steps and sequence, the corresponding preparation mode and the process parameter range of the laminated structure, the making of the cell can be well completed.
Owner:TONGWEI SOLAR ENERGY CHENGDU CO LID +2

Compound optical and electrical conductors, and connectors therefor

A compound optical and electrical conductor includes a fiberoptic light transmitting element (multiple fibers or single solid rod) with at least one solar cell with LED therewith. The electrical conductor or conductors may be imbedded or otherwise secured within the optically conducting element or its surrounding jacket or sheath, or may be contained in a separate elongate retainer which may be provided to hold the optically conducting element in place as desired. The conductors may include a jacket or retainer which is optically open along one side thereof, allowing the optical conductor to emit light laterally therefrom subtending an angle defined by the optical gap in the jacket or retainer. One or more compound connectors may be provided, for linking two or more such compound conductors together as desired. The connectors provide for both the concentric alignment of the optical conductors, and also the electrical connection of the electrical conductors of the compound devices. The connectors preferably each include one or more lighting elements (halogen, high output LED, etc.) to compensate for light attenuation along the lengths of the attached optical conductors. The electrically conducting elements of the compound conductors provide electrical power to the lighting elements enclosed within the connectors, to provide an increase in light power at points along the length of an assembly. Different colors of lights may be provided, with the electrical conductors providing for the selective illumination of each as desired.
Owner:PLASTICS INVENTIONS & PATENTS INC

Gallium and indium doped single crystal silicon material for solar battery and preparation method thereof

The invention discloses a gallium and indium doped single crystal silicon material for a solar battery, which consists of the following components according to atom number per cubic centimeter of the single crystal silicon material: 1.0X10<14> to 1.0X10<18> gallium, 5.0X10<12> to 5.0x10<16> indium and the balance of single crystal silicon. The invention also discloses a method for preparing the gallium and indium doped single crystal silicon material for the solar battery, which is implemented by the following steps of: dismantling a furnace by using a regular method, cleaning a hearth and assembling the furnace; vacuumizing the inside of a single crystal furnace and detecting the leakage of the single crystal furnace by using a regular method; pressuring materials and smelting the materials; stabilizing the melt; seeding crystals; performing shouldering; performing shoulder rotation; performing isodiametric growth; performing ending and cooling the obtained product; and stopping the furnace. The gallium and indium doped single crystal silicon material for the solar battery has the advantages of high conversion efficiency, low light attenuation, low oxide content in the single crystal silicon and uniform radial distribution in a single crystal silicon rod; and the preparation method of the invention effectively controls the thermal conversion of silicon melt and grows the high-quality gallium and indium doped single crystal silicon material for the solar battery.
Owner:LONGI GREEN ENERGY TECH CO LTD
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