The invention relates to the technical field of
wafer warpage and curvature detection, in particular to a
wafer warpage and curvature detection
system and a detection method thereof, and the detection
system comprises a
laser, a
beam expander, a diaphragm, a
beam splitter prism, a collimating mirror, a
reference mirror, an
imaging lens, a CCD and a computer, the
light beam is reflected by the sample to be measured and then returns along the same path to interfere with the reference light so as to generate three groups of interference fringes, and the three groups of interference fringes pass through the
imaging lens, the CCD and the computer and then are calculated so as to obtain the warping degree and the bending degree of the sample to be measured. According to the invention, the multi-surface interference
fringe pattern of the double-sided polished sample to be measured is acquired by using the
wavelength-adjustable Hunfizeau interferometer, and the warping degree and the bending degree of the sample to be measured are obtained through calculation, so that the problem of mapping errors caused by measuring the
surface shape by using two interferometers or overturning the measured
surface shape is solved; therefore, the detection steps of the warping degree and the bending degree of the
wafer can be simplified, and the precision of the detection result is improved.